1. A transistor comprising:
an oxide layer configured to provide a depletion field in a conduction channel;
a barrier layer formed over the oxide layer; and
a field electrode formed over the barrier layer,
wherein the barrier layer is configured to reduce a width of the depletion field absent a voltage applied to the field electrode.
2. The transistor of claim 1, wherein the barrier layer includes tantalum nitride.
3. The transistor of claim 2, wherein the barrier layer has a resistivity of about 2500 \u03bcOhms-cm.
4. The transistor of claim 2, wherein the electrode includes copper.
5. The transistor of claim 1, wherein the barrier layer includes less than 10% fluorine.
6. The transistor of claim 1, wherein the barrier layer includes silicon impurities of less than about 5%.
7. The transistor of claim 1, wherein the electrode includes copper and the barrier layer includes tantalum.
8. A transistor comprising:
an oxide layer configured to provide a depletion field in a conduction channel;
a pair of barrier layers formed over the oxide layer; and
a field electrode formed between the pair of barrier layers,
wherein the barrier layers are configured to reduce a width of the depletion field absent a voltage applied to the field electrode.
9. The transistor of claim 8, wherein each of the pair of barrier layers is an atomic layer deposition layer.
10. The transistor of claim 8, wherein each of the pair of barrier layers have a thickness of less than 1 angstrom.
11. The transistor of claim 8, wherein each of the pair of barrier layers include tantalum nitride.
12. The transistor of claim 11, wherein each of the pair of barrier layers includes impurities of less than 10% fluorine.
13. The transistor of claim 12, wherein each of the pair of barrier layers includes silicon impurities of less than about 5%.
14. The transistor of claim 13, wherein the electrode includes copper.
15. The transistor of claim 11, wherein the tantalum nitride includes a Ta:N ratio of about 1:1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. A method of producing a wavelength-converting casting composition, for converting a wavelength of ultraviolet, blue or green light emitted by an electroluminescent component, the method which comprises:
providing a base of transparent epoxy casting resin;
providing a luminous substance pigment powder of luminous substance pigments from a phosphorus group having the general formula A3B5X12:M;
tempering the luminous substance pigment powder at a temperature of 200 C. and subsequently mixing the tempered pigment powder with the epoxy casting resin.
2. The method according to claim 1, wherein the step of providing a luminous substance pigment powder comprises providing an inorganic luminous substance pigment powder comprising luminous substance pigments from a phosphorus group having the general formula A3B5X12:M and having grain sizes 20 m and a mean grain diameter d505 m.
3. The method according to claim 1, which comprises, prior to the mixing step, slurrying the luminous substance pigment powder in a higher-boiling alcohol and subsequently drying the luminous substance pigment powder.
4. The method according to claim 1, which comprises, prior to the mixing step, adding a hydrophobic silicone wax to the luminous substance pigment powder.
5. The method according to claim 1, which comprises surface-modifying the luminous substance pigment powder at elevated temperatures with alcohols, glycol ethers and silicones in the epoxy casting resin.