1461188933-ed15bfa6-4410-464f-8a36-2299985d27ea

1. A method at classifying vehicle occupants comprising the steps of:
generating a stereo image pair of occupant from two cameras;
inputting the image pair into an occupant classification controller;
processing the stereo image pair into a differential edge density feature by the controller;
inputting the differential edge density feature into a state machine of the controller;
determining, by the state machine and using the differential edge density feature, if the occupant has changed with regard to occupant type;
if the occupant has changed with regard to occupant type, applying a static classification process having a prior knowledge of the occupant type in memory of the controller;
determining if prior occupant type has changed by the state machine between an adult and a child;
establishing whether the occupant is an adult or a child;
switching on a corresponding adult or child dynamic classifier of the controller;
switching off a static classifier of the static classification process; and
utilizing the differential edge density features by the corresponding adult or child dynamic classifier to determine an occupant class output which signifies occupant position.
2. The method of classifying vehicle occupants set forth in claim 1 wherein the occupant class output is outputted from a neural network engine having the adult and child dynamic classifiers, and is inputted into a restraint controller of a restraint system.
3. The method of classifying vehicle occupants set forth in claim 2 comprising the further steps of:
disarming the restraint system by the classification controller if the occupant class output signifies occupant is out of position; and
not disarming the restraint system by the classification controller if the occupant class output signifies occupant is in a normal position.
4. The method of classifying vehicle occupants set forth in claim 1 comprising the further step of combining wavelet features with the differential edge density features as an input into the adult and child dynamic classifiers to determine the occupant class output.
5. The method of classifying vehicle occupants set forth in claim 4 wherein the occupant class output is either out of position or normal position.
6. The method of classifying vehicle occupants set forth in claim 4 comprising the further step of applying a classification threshold to the occupant class output to determine validity of the output.
7. The method of classifying vehicle occupants set forth in claim 6 comprising the further step of training the adult and child classifiers with three prescribed input occupant categories signifying occupant out of position, occupant in normal position and empty seat.
8. The method of classifying vehicle occupants set forth in claim 7 comprising the further steps of:
forcing a low confidence value for invalidity of the output by the prescribed input occupant category signifying empty seat if an empty seat is present;
switching on the static classifier for receipt of the low confidence output; and
updating the occupant type.
9. The method of classifying vehicle occupants set forth in claim 1 wherein the occupant change is between adult and adult, adult and child, child and child, adult and empty seat, and child and empty seat.
10. The method of classifying vehicle occupants set forth in claim 1 comprising the further step of utilizing the prior occupant type if the occupant has not changed, as detected by the state machine.
11. The method of classifying vehicle occupants set forth in claim 10 comprising the further step of outputting the prior occupant type as the classification if the occupant remains in position as indicated by the differential edge density feature and thus the dynamic classification process is not required.
12. The method of classifying vehicle occupants set forth in claim 11 comprising the further step of initializing the corresponding adult or child dynamic classifier if the occupant has not remained in position.
13. The method of classifying vehicle occupants set forth in claim 12 comprising the further steps of:
comparing the output of the adult or child dynamic classifier to a classification threshold;
recording the output as an occupant class output if the output passes the classification threshold; and
recording the output as an invalid output if the output does not pass the classification threshold.
14. The method of classifying vehicle occupants set forth in claim 13 comprising the further steps of:
switching on the static classifier for receipt of the invalid output; and
updating of the occupant type by the static classifier.
15. A method of classifying vehicle occupants comprising the steps of:
generating a stereo image pair of an occupant from two cameras;
determining if the occupant has changed between an adult and adult, an adult and child, and a child and child by a state machine of a neural network engine;
determining if the adult or child has altered position within the vehicle by the state machine;
if position is altered, initiating a corresponding adult or child dynamic classifier to compute a classification output; and
if the position is not altered, recording a previous classification as the current classification.
16. The method of classifying vehicle occupants set forth in claim 15 comprising the further steps of:
processing the classification output through a pre-established confidence threshold to determine validity of the classification output;
if valid, releasing the classification output to a restraint system; and
if invalid, sending the classification output to a static classifier for updating of an occupant type.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An acylamide compound of the formula (1), prodrugs thereof, or pharmaceutically acceptable salts thereof:
wherein R1 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms;
R2 is an alkyl group having 1 to 10 carbon atoms, aryl group having 6 to 10 carbon atoms, heteroaryl group having 1 to 10 carbon atoms, arylalkyl group having 7 to 20 carbon atoms, heteroarylalkyl group having 2 to 11 carbon atoms or alkylthioalkyl group having 2 to 6 carbon atoms;
R3 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, and R2 and R3 may bond each other to form a ring;
R4 is a hydrogen atom or an alkyl group having 1 to 16 carbon atoms;
R5 is a straight-chain hydrocarbon group having 5 to 21 carbon atoms which may have 1 to 3 double bond(s); and
X is an oxygen atom or NH.
2. The acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1, wherein, in the formula (1), R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; R2 is a straight- or branched-chain alkyl group having 1 to 4 carbon atoms, cyclic alkyl group having 3 to 10 carbon atoms, aryl group having 6 to 8 carbon atoms, heteroaryl group having 1 to 8 carbon atoms, arylalkyl group having 7 to 17 carbon atoms, heteroarylalkyl group having 2 to 8 carbon atoms or alkylthioalkyl group having 2 to 4 carbon atoms; R3 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; R4 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; R5 is a straight-chain alkyl group having 5 to 21 carbon atoms which may have one double bond; and X is an oxygen atom.
3. The acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 2, wherein, in the formula (1), R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; R2 is a straight- or branched-chain alkyl group having 1 to 4 carbon atoms, phenylalkyl group having 7 to 8 carbon atoms or alkylthioalkyl group having 2 to 4 carbon atoms; R3 is a hydrogen atom; R4 is a hydrogen atom; and R5 is a straight-chain alkyl group having 5 to 21 carbon atoms which may have one double bond.
4. The acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 2, wherein, in the formula (1), R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; R2 is a methyl group, isopropyl group, isobutyl group, sec-butyl group, phenylmethyl group or methylthioethyl group; R3 is a hydrogen atom; R4 is a hydrogen atom; and R5 is a straight-chain alkyl group having 5 to 21 carbon atoms which may have one double bond.
5. An acylamide compound of the following structural formulae, prodrugs thereof, or pharmaceutically acceptable salts thereof:
6. The acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 2, wherein, in the formula (1), R1 is a hydrogen atom; R3 is a hydrogen atom; R4 is a hydrogen atom; X is an oxygen atom; R5 is a straight-chain alkyl group having 5 to 21 carbon atoms which may have one double bond; and R2 is either one of the following substituents:
a tert-butyl group;
2,2,2,2\u2032,2\u2032,2\u2032-hexafluoroisopropyl group;
cyclohexyl group; or
diphenylmethyl group,
except for a compound wherein R2 is a tert-butyl group, and R5 is a normal dodecyl group or 10-decenyl group.
7. The acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 2, wherein, in the formula (1), R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; R2 is a straight- or branched-chain alkyl group having 1 to 4 carbon atoms, phenylalkyl group having 7 to 8 carbon atoms or alkylthioalkyl group having 2 to 4 carbon atoms; R3 is an alkyl group having 1 to 4 carbon atoms; R4 is a hydrogen atom; and R5 is a straight-chain alkyl group having 5 to 21 carbon atoms which may have one double bond.
8. The acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1, wherein, in the formula (1), R1 is a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; R2 is a straight- or branched-chain alkyl group having 1 to 4 carbon atoms; R3 is a hydrogen atom; R4 is a hydrogen atom or a straight-chain, branched-chain or cyclic alkyl group having 1 to 16 carbon atoms; R5 is a straight-chain alkyl group having 5 to 21 carbon atoms which may have one double bond; and X is NH.
9. An adiponectin inducer or secretagogue, or a preventivetherapeutic agent of hypoadiponectinemia, which comprises the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1.
10. A therapeutic agent of metabolic syndromes which comprises the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1.
11. A therapeutic agent of hyperlipemia which comprises the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1.
12. A preventivetherapeutic agent of diabetes which comprises the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1.
13. An improving agent of impaired glucose tolerance which comprises the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1.
14. An improving agent of insulin resistance or enhancing agent of insulin sensitivity, which comprises the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1.
15. A therapeutic agent of hypertension, preventivetherapeutic agent of vascular disorders or an anti-inflammatory agent, which comprises the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1.
16. A therapeutic agent of hepatic inflammation, fatty liver, hepatic fibrosis or liver cirrhosis, which comprises the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1.
17. A preventivetherapeutic agent of non-alcoholicnonviral steatohepatitis (NASH) or non-alcoholicnonviral fatty liver disease (NAFLD), which comprises the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1.
18. A preventivetherapeutic agent of obesity which comprises the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1.
19. A food and beverage comprising the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1, on which it is indicated to have an effect of preventingtreating hypoadiponectinemia, hyperlipemia, hypertension or vascular disorders.
20. A food and beverage comprising the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1, on which it is indicated to have an effect of preventingtreating diabetes or impaired glucose tolerance.
21. A food and beverage comprising the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1, on which it is indicated to have an effect of improving insulin resistance or an effect of enhancing insulin sensitivity.
22. A food and beverage comprising the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1, on which it is indicated to have an effect of preventingtreating fatty liver, hepatic fibrosis or liver cirrhosis.
23. A food and beverage comprising the acylamide compound, prodrugs thereof, or pharmaceutically acceptable salts thereof according to claim 1, on which it is indicated to have an effect of preventingtreating obesity.

1461188921-e699f546-7cc6-424b-9d2a-27004eeae596

What is claimed is:

1. A cleaning solution comprising about 5-30% by weight of ammonium hydroxide, about 23-70% by weight of an organic solvent and about 10-50% by weight of water.
2. A cleaning solution as claimed in claim 1, wherein said ammonium hydroxide is at least one selected from the group consisting of (NH3OH)2SO4, NH3OHCl, NH3OHNO3 and (NH3OH)PO4.
3. A cleaning solution as claimed in claim 1, wherein said organic solvent is at least one selected from the group consisting of acetone, acetonitrile and MIBK (methyl isobutyl ketone).
4. A method of cleaning an organic component comprising the steps of:
coating an organic material on a semiconductor wafer installed in a predetermined equipment;
separating said equipment and then dipping said equipment into a cleaning solution comprising about 5-30% by weight of ammonium hydroxide, about 23-70% by weight of an organic solvent and about 10-50% by weight of water; and
rinsing and drying said equipment.
5. The method as claimed in claim 4, wherein said organic material is one of a photoresist and an organic ARC (anti-reflective coating) component.
6. The method as claimed in claim 4, wherein ammonium hydroxide is at least one selected from the group consisting of (NH30H)2SO4, NH3OHCl, NH3OHNO3 and (NH3OH)PO4.
7. The method as claimed in claim 4, wherein said organic solvent is at least one selected from the group consisting of acetone, acetonitrile and MIBK (methyl isobutyl ketone).
8. The method as claimed in claim 4, further comprising a step of rubbing said equipment with a wiper after completing said dipping step.
9. The method as claimed in claim 4, wherein said rinsing is implemented with acetone.
10. The method as claimed in claim 4, wherein said dipping is implemented for about 5-15 minutes.
11. The method as claimed in claim 4, wherein said equipment is a inner container installed to surround said wafer with a predetermined distance.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor device formed between a wordline and a bitline, the wordline and bitline being arranged substantially orthogonal to one another, the semiconductor device comprising:
a growth layer, the growth layer comprising tantalum and having a thickness greater than about 75 Angstroms;
an antiferromagnetic layer, the antiferromagnetic layer being formed on the growth layer;
a pinned layer, the pinned layer being formed on the antiferromagnetic layer and comprising one or more pinned ferromagnetic sublayers;
a tunnel barrier layer, the tunnel barrier being formed on the pinned layer and comprising magnesium oxide; and
a free layer, the free layer being formed on the tunnel barrier layer and comprising two or more free ferromagnetic sublayers, each free ferromagnetic sublayer having a magnetic anisotropy axis that is oriented about 45 degrees from the wordline and bitline.
2. The semiconductor device of claim 1, wherein the semiconductor device comprises a magnetic tunnel junction.
3. The semiconductor device of claim 1, wherein data can be written to the semiconductor device by toggle-write operations.
4. The semiconductor device of claim 1, wherein the antiferromagnetic layer comprises iridium and manganese.
5. The semiconductor device of claim 1, wherein at least one of the pinned layer and free layer comprises iron and cobalt.
6. The semiconductor device of claim 1, wherein at least one of the pinned layer and free layer comprises boron.
7. The semiconductor device of claim 1, wherein the free layer comprises a lower free ferromagnetic sublayer formed on the tunnel barrier and an upper free ferromagnetic sublayer separated from the lower free ferromagnetic sublayer by a spacer sublayer.
8. The semiconductor device of claim 7, wherein magnetic moment vectors of the lower and upper free ferromagnetic sublayers are oriented antiparallel with respect to one another when no external magnetic field is applied to the semiconductor device.
9. The semiconductor device of claim 7, wherein the spacer sublayer comprises copper, chromium, molybdenum, ruthenium, niobium, tungsten, osmium, iridium or tantalum, or a combination thereof.
10. The semiconductor device of claim 1, wherein the pinned layer comprises a lower pinned ferromagnetic sublayer formed on the antiferromagnetic layer and an upper pinned ferromagnetic sublayer separated from the lower pinned ferromagnetic sublayer by an antiferromagnetic coupling sublayer.
11. The semiconductor device of claim 10, wherein magnetic moment vectors of the lower and upper pinned ferromagnetic sublayers are antiparallel with respect to one another.
12. The semiconductor device of claim 1, wherein the pinned layer comprises three or more pinned ferromagnetic sublayers.
13. The semiconductor device of claim 1, wherein the minimum dimension of the free layer in a plane substantially parallel to the plane incorporating an interface of the free layer and the tunnel barrier layer is less than about 200 nanometers.
14. An integrated circuit comprising at least one semiconductor device, the at least one semiconductor device being formed between a wordline and a bitline, the wordline and bitline being arranged substantially orthogonal to one another, the at least one semiconductor device comprising:
a growth layer, the growth layer comprising tantalum and having a thickness greater than about 75 Angstroms;
an antiferromagnetic layer, the antiferromagnetic layer being formed on the growth layer;
a pinned layer, the pinned layer being formed on the antiferromagnetic layer and comprising one or more pinned ferromagnetic sublayers;
a tunnel barrier layer, the tunnel barrier being formed on the pinned layer and comprising magnesium oxide; and
a free layer, the free layer being formed on the tunnel barrier layer and comprising two or more free ferromagnetic sublayers, each free ferromagnetic sublayer having a magnetic anisotropy axis that is oriented about 45 degrees from the wordline and bitline.
15. The integrated circuit of claim 14, wherein the semiconductor device comprises a magnetic tunnel junction.
16. The integrated circuit of claim 14, wherein the integrated circuit comprises magnetoresistive random access memory circuitry.
17. A method of forming a semiconductor device between a wordline and a bitline, the wordline and bitline being arranged substantially orthogonal to one another, the method comprising the steps of:
forming a growth layer, the growth layer comprising tantalum and having a thickness greater than about 75 Angstroms;
forming an antiferromagnetic layer on the growth layer;
forming a pinned layer on the antiferromagnetic layer, the pinned layer comprising one or more pinned ferromagnetic sublayers;
forming a tunnel barrier layer on the pinned layer, the tunnel barrier comprising magnesium oxide; and
forming a free layer on the tunnel barrier layer, the free layer comprising two or more free ferromagnetic sublayers, each free ferromagnetic sublayer having a magnetic anisotropy axis that is oriented about 45 degrees from the wordline and bitline.
18. The method of claim 17, wherein the step of forming the growth layer comprises physical vapor deposition.
19. The method of claim 17, wherein the step of forming at least one of the two or more free ferromagnetic sublayers comprises physical vapor deposition in the presence of an applied magnetic field.
20. The method of claim 17, wherein the step of forming the tunnel barrier comprises ion beam deposition.