I claim:
1. In an oil pumping system (1) receiving oil from an oil reservoir (6) and pumping oil under pressure to an external load (16), having an input shaft (3) rotated by an external source of power, a cylinder block assembly (4), a variable displacement swash plate (2) inside said cylinder block assembly (4) secured to and rotated by said input shaft (3), a charge pump (5) secured to and operated by said input shaft (3), a first oil line (15) communicating between said variable displacement swash plate (2) and said external load (16), a second oil line (17) communicating between said variable displacement swash plate (2) and said external load (16), said first oil line (15) carrying oil under high pressure at a first point in the cycle of operation of the system from said cylinder block assembly (4) to said external load (16) or alternately carrying oil under low pressure at a second point in the cycle of operation of the system from said external load (16) to said cylinder block assembly (4), said second oil line (17) carrying oil under low pressure at said first point in the cycle of operation of the system from said external load (16) to said cylinder block assembly (4) or alternately carrying oil under high pressure at said second point in the cycle of operation of the system from said cylinder block assembly (4) to said external load (16), a third oil line (10) carrying oil from said charge pump (5) through oil line (11) and check valve (13) to said first oil line 15 and through oil line (12) through check valve (14) to second oil line (17),
the combination comprising:
(a) a fourth oil line (26) communicating between said third oil line (10) and reservoir (6) and carrying oil from said third oil line (10) to said reservoir (6),
(b) a fifth oil line (19,21) communicating directly between oil line (10) arid cylinder block assembly (4) without the interposition of a check valve therein.
2. Oil pumping system as in claim 1, further comprising:
(c) said external load (16) is an oil operated vehicle wheel motor having two ports,
(d) said first oil line (15) communicates with one of said ports,
(e) said second oil line (17) communicates with the other of said ports.
The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.
1. A planar structure solar cell comprising:
a transparent substrate;
a transparent conductive electrode overlying the transparent substrate;
a first metal oxide having a planar top surface and a planar bottom surface overlying the transparent conductive electrode;
a semiconductor absorber layer overlying the first metal oxide planar top surface, the semiconductor absorber layer formed from a single material comprising organic and inorganic components;
a p-type inorganic semiconductor hole-transport material (HTM) layer overlying the semiconductor absorber layer; and,
a metal electrode overlying the HTM layer.
2. The solar cell of claim 1 wherein the first metal oxide is an n-type metal oxide.
3. (canceled)
4. The solar cell of claim 1 wherein the first metal oxide is selected from a group consisting of titanium oxide (TiO2), tin oxide (SnO2), zinc oxide (ZnO), niobium oxide (Nb2O5), tantalum oxide (Ta2O5), barium titanate (BaTiO3), strontium titanate (SrTiO3), zinc titanate (ZnTiO3), and copper titanate (CuTiO3).
5. The solar cell of claim 1 wherein the HTM layer has a thickness in a range of 1 to 150 nanometers.
6. The solar cell of claim 1 wherein the HTM layer is a material selected from a group consisting of stoichiometric and non-stoichiometric molybdenum (VI) oxide, stoichiometric and non-stoichiometric vanadium (V) oxide, stoichiometric and non-stoichiometric nickel (II) oxide, stoichiometric and non-stoichiometric tungsten (VI) oxide, stoichiometric and non-stoichiometric chromium (VI) oxide, and stoichiometric and non-stoichiometric copper (I) oxide.
7. A planar structure solar cell comprising:
a substrate;
a metal electrode overlying the substrate;
a p-type inorganic semiconductor hole-transport material (HTM) layer overlying the metal electrode;
a semiconductor absorber layer overlying the HTM layer, formed from a single material comprising organic and inorganic components;
a first metal oxide having a planar bottom surface overlying the semiconductor absorber layer, and a planar top surface; and,
a transparent conductive electrode overlying the first metal oxide planar top surface.
8. The solar cell of claim 7 wherein the first metal oxide is an n-type metal oxide.
9. (canceled)
10. The solar cell of claim 7 wherein the first metal oxide is selected from a group consisting of titanium oxide (TiO2), tin oxide (SnO2), zinc oxide niobium oxide (Nb2O5), tantalum oxide (Ta2O5), barium titanate (BaTiO3), strontium titanate (SrTiO3), zinc titanate (ZnTiO3), and copper titanate (CuTiO3).
11. The solar cell of claim 7 wherein the HTM layer has a thickness in a range of 1 to 150 nanometers.
12. The solar cell of claim 7 wherein the HTM layer is a material selected from a group consisting of stoichiometric and non-stoichiometric molybdenum (VI) oxide, stoichiometric and non-stoichiometric vanadium (V) oxide, stoichiometric and non-stoichiometric nickel (II) oxide, stoichiometric and non-stoichiometric tungsten (VI) oxide, stoichiometric and non-stoichiometric chromium (VI) oxide, and stoichiometric and non-stoichiometric copper (I) oxide.
13. A method for forming a planar structure solar cell, the method comprising:
forming a transparent conductive electrode;
forming a first metal oxide with a planar first surface and a planar second surface adjacent to the transparent conductive electrode;
forming a semiconductor absorber layer adjacent to the first metal oxide planar second surface, the semiconductor absorber layer formed from a single material comprising organic and inorganic components;
forming a p-type inorganic semiconductor hole-transport material (HTM) layer adjacent to the semiconductor absorber layer; and,
forming a metal electrode adjacent to the HTM layer.
14. The method of claim 13 wherein the transparent conductive electrode is formed overlying a transparent substrate;
wherein the first metal oxide planar first surface is formed overlying the transparent conductive electrode;
wherein the semiconductor absorber layer is formed overlying the first metal oxide planar second surface;
wherein the HTM layer is formed overlying the semiconductor absorber layer; and,
wherein the metal electrode is formed overlying the HTM layer.
15. The method of claim 13 wherein the metal electrode is formed overlying a substrate;
wherein the HTM layer is formed overlying the metal electrode;
wherein the semiconductor absorber layer is formed overlying the HTM layer;
wherein the planar layer of the first metal oxide planar first surface is formed overlying the semiconductor absorber layer; and,
wherein the transparent conductive electrode is formed overlying the first metal oxide planar second surface.
16. The method of claim 13 wherein forming the HTM layer includes growing a p-type metal oxide overlying the metal electrode.
17. The method of claim 13 wherein forming the first metal oxide includes the first metal oxide being selected from a group consisting of titanium oxide (TiO2), tin oxide (SnO2), zinc oxide (ZnO), niobium oxide (Nb2O5), tantalum oxide (Ta2O5), barium titanate (BaTiO2), strontium titanate (SrTiO3), zinc titanate (ZnTiO3), and copper titanate (CuTiO3).
18. (canceled)
19. The method of claim 13 wherein forming the first metal oxide layer includes forming an n-type first metal oxide layer.
20. The method of claim 13 wherein forming the HTM layer includes forming the HTM layer to a thickness in a range of 1 to 150 nanometers.
21. The method of claim 13 wherein forming the HTM layer includes forming the HTM layer from a material selected from a group consisting of stoichiometric and non-stoichiometric molybdenum (VI) oxide, stoichiometric and non-stoichiometric vanadium (V) oxide, stoichiometric and non-stoichiometric nickel (II) oxide, stoichiometric and non-stoichiometric tungsten (VI) oxide, stoichiometric and non-stoichiometric chromium (VI) oxide, and stoichiometric and non-stoichiometric copper (I) oxide.
22. The solar cell of claim 1 wherein the semiconductor absorber layer has the general formula of ABXzY3-z;
where \u201cA\u201d is an organic monocation;
where B is a transition metal dication;
where X and Y are inorganic monoanions; and,
where z is in a range of 0 to 1.5.
23. The solar cell of claim 7 wherein the semiconductor absorber layer has the general formula of ABXzY3-z;
where \u201cA\u201d is an organic monocation;
where B is a transition metal dication;
where X and Y are inorganic monoanions; and,
where z is in a range of 0 to 1.5.
24. The solar cell of claim 13 wherein the semiconductor absorber layer has the general formula of ABXzY3-z;
where \u201cA\u201d is an organic monocation;
where B is a transition metal dication;
where X and Y are inorganic monoanions; and,
where z is in a range of 0 to 1.5.