1. A semiconductor component, comprising:
a semiconductor substrate;
an insulation layer on said semiconductor substrate, said insulating layer having a thickness of between 50 nm and 200 nm;
a semiconductor layer configured on said insulation layer;
a first doped terminal zone and a second doped terminal zone formed in said semiconductor layer; and
a drift zone formed in said semiconductor layer;
said drift zone formed between said first doped terminal zone and said second doped terminal zone, said drift zone including a plurality of complementary doped adjacent sections; and
at least one of said first doped terminal zone and said second doped terminal zone directly adjoining said semiconductor substrate.
2. The semiconductor component according to claim 1, wherein said first terminal zone and said second terminal zone reach through said insulation layer into said substrate.
3. The semiconductor component according to claim 2, wherein said first terminal zone and said second terminal zone are doped complementary with respect to said semiconductor substrate.
4. The semiconductor component according to claim 1, wherein said second terminal zone is of a complementary conduction type with respect to said first terminal zone.
5. The semiconductor component according to claim 1, comprising:
a depletion zone configured between said second terminal zone and said drift zone;
said depletion zone having a conduction type; and
said first terminal zone and said second terminal zone having a conduction type that is complementary to said conduction type of said depletion zone.
6. The semiconductor component according to claim 1, wherein:
said first terminal zone has a conductor type; and
said drift zone has a conduction type that is equivalent to the conduction type of said first terminal zone.
7. The semiconductor component according to claim 5, wherein:
said plurality of said complementary doped adjacent sections includes first sections and second sections;
said first sections and said first terminal zone are of a first conduction type;
said first sections are connected to said first terminal zone;
said second sections and said depletion zone are of a second conduction type complementary to said first conduction type; and
said second sections are connected to said depletion zone.
8. The semiconductor component according to claim 1, wherein:
said plurality of said complementary doped adjacent sections includes first sections and second sections;
said first sections and said first terminal zone are of a first conduction type;
said first sections are connected to said first terminal zone;
said second sections and said second terminal zone are of a second conduction type complementary to said first conduction type; and
said second sections are connected to said second terminal zone.
9. The semiconductor component according to claim 1, wherein said plurality of said complementary doped adjacent sections run in a longitudinal direction between said first terminal zone and said second terminal zone.
10. The semiconductor component according to claim 9, wherein:
said plurality of said complementary doped adjacent sections includes first sections and second sections;
said first sections and said first terminal zone are of a first conduction type;
said first sections are connected to said first terminal zone;
said second sections and said second terminal zone are of a second conduction type complementary to said first conduction type; and
said second sections are connected to said second terminal zone.
11. The semiconductor component according to claim 9, comprising:
a depletion zone configured between said second terminal zone and said drift zone;
said plurality of said complementary doped adjacent sections running between said first terminal zone and said depletion zone.
12. The semiconductor component according to claim 1, wherein:
said semiconductor substrate is p-doped; and
the one of said first doped terminal zone and said second doped terminal zone that directly adjoins said semiconductor substrate is n-doped.
13. The semiconductor component according to claim 11, wherein:
said plurality of said complementary doped adjacent sections includes first sections and second sections;
said first sections and said first terminal zone are of a first conduction type;
said first sections are connected to said first terminal zone;
said second sections and said depletion zone are of a second conduction type complementary to said first conduction type; and
said second sections are connected to said depletion zone.
The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.
1. A liquid crystal driving circuit device which generates a drive signal for a liquid crystal display panel, comprising: AC generating means for generating an alternating current component of said drive signal; a capacitive element with one terminal connected with said AC generating means; a current limitation means with one terminal connected with other terminal of said capacitive element; and DC generating means for generating a direct current component of said drive signal, said DC generating means having an output connected with the other terminal of said current limitation means, wherein said capacitive element eliminates a direct current component of an output signal from said AC generating means, and wherein said current limitation means limits a current caused by a voltage difference between a voltage at the other terminal of said capacitive element and a voltage at said output, further wherein an amplitude value of the alternating current component from said AC generating means and an amplitude value of the alternating current component of a signal from said output of said DC generating means are approximately the same.
2. The liquid crystal display device having the liquid crystal driving circuit device as claimed in claim 1.