1. An integrated circuit comprising:
a single silicon die, the single silicon die comprising:
a first processing unit, the first processing unit comprising
a first microprocessor and
a memory; and
a first secure processing unit, communicatively coupled to the first processing unit, the first secure processing unit comprising:
a second microprocessor,
a first bus interface unit, the first bus interface unit being operable to restrict access to at least some components of the first secure processing unit by the first processing unit,
random-access memory,
non-volatile memory,
a power failure sensing circuit, wherein the power failure sensing circuit is operable to render the non-volatile memory within the first secure processing unit resistant to tampering when a power failure is sensed, and
a direct memory access controller.
2. The integrated circuit of claim 1, in which the first processing unit comprises a second secure processing unit, the second secure processing unit comprising a second bus interface unit, the second bus interface unit being operable to restrict access to at least some components of the second secure processing unit by the first secure processing unit.
3. The integrated circuit of claim 1, in which the at least some components of the first secure processing unit include secret information stored in the non-volatile memory of the first secure processing unit.
4. The integrated circuit of claim 3, in which the secret information comprises at least one cryptographic key.
5. The integrated circuit of claim 1, in which the at least some components of the first secure processing unit include secret information stored in the random-access memory of the first secure processing unit.
6. The integrated circuit of claim 1, in which the first processing unit is a device microcontroller.
7. The integrated circuit of claim 1, in which the first processing unit is a communications microcontroller.
8. The integrated circuit of claim 1, in which the integrated circuit comprises a network communications chip.
9. The integrated circuit of claim 1, in which the first secure processing unit is operable to execute software for controlling usage of content objects according to one or more usage rules associated with the content objects.
10. The integrated circuit of claim 9, in which the software for controlling usage of content objects is stored, at least in part, in the non-volatile memory of the first secure processing unit.
11. The integrated circuit of claim 9, in which at least some of the usage rules associated with the content objects are stored in the non-volatile memory of the first secure processing unit.
12. The integrated circuit of claim 1, in which the first secure processing unit further comprises a clock.
13. The integrated circuit of claim 12, in which the first secure processing unit further comprises a battery, the battery being operable to supply power to the clock.
14. The integrated circuit of claim 1, in which the first secure processing unit further comprises a memory management unit.
15. The integrated circuit of claim 14, in which the memory management unit is operable to prevent a less trusted task executing on the first processing unit or the first secure processing unit from modifying a more trusted task executing on the first secure processing unit.
16. The integrated circuit of claim 14, in which the memory management unit is operable to page information into and out of first secure processing unit.
17. The integrated circuit of claim 16, in which the information paged into and out of the first secure processing unit comprises virtual memory pages.
18. The integrated circuit of claim 1, in which the first secure processing unit is operable to encrypt at least some code or other information before storing it in memory external to the first secure processing unit.
19. The integrated circuit of claim 18, in which the first secure processing unit is operable to decrypt at least some code or other information loaded from memory external to the first secure processing unit.
20. The integrated circuit of claim 1, in which the first secure processing unit is operable to cryptographically seal at least some code or other information before storing it in memory external to the first secure processing unit.
21. The integrated circuit of claim 20, in which the first secure processing unit is operable to verify a cryptographic seal associated with information loaded from memory external to the first secure processing unit.
22. The integrated circuit of claim 1, in which the nonvolatile memory comprises read-only memory.
23. The integrated circuit of claim 1, in which the non-volatile memory comprises non-volatile random-access memory.
24. The integrated circuit of claim 1, in which the non-volatile memory comprises electrically erasable programmable read only memory (EEPROM).
25. The integrated circuit of claim 1, in which the non-volatile memory comprises flash memory.
26. The integrated circuit of claim 1, in which the non-volatile memory stores kernel programs used to control the first secure processing unit.
27. The integrated circuit of claim 1, in which the non-volatile memory stores one or more load modules.
28. The integrated circuit of claim 1, in which the first processing unit and the first secure processing unit are operable to run asynchronously with respect to each other.
29. An electronic appliance comprising:
a single silicon die comprising:
a first processing unit; and
a first secure processing unit, communicatively coupled to the first processing unit, the first secure processing unit comprising:
a first microprocessor;
a first bus interface unit, the first bus interface unit being operable to restrict access to at least some components of the first secure processing unit by the first processing unit;
random-access memory;
non-volatile memory;
a power failure sensing circuit, wherein the power failure sensing circuit is operable to render the non-volatile memory within the first secure processing unit resistant to tampering when a power failure is sensed; and
a direct memory access controller;
random-access memory;
a user interface; and
secondary storage, the secondary storage storing rights management software that, when executed by the first microprocessor of the integrated circuit is operable to cause the electronic appliance to control access to a piece of electronic content by enforcing control information securely associated with the piece of electronic content, the control information specifying one or more permitted uses of the piece of electronic content, wherein the rights management software is resistant to tampering by a user of the electronic appliance with enforcement of the control information.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. A method of producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation, which comprises the following steps:
prefabricating a basic material wafer by producing a fixed grid of regions of a first conductivity type and regions of a second conductivity type, opposite to the first conductivity type, such that charge compensation is substantially present in a lateral direction in the basic material wafer; and
introducing a rapidly diffusing dopant into edge regions of a compensation component to be produced from the basic material wafer, so that, in the edge regions of the compensation component to be produced, a doping of the rapidly diffusing dopant predominates over a doping of the regions of the opposite conductivity type to the edge regions.
2. The method according to claim 1, which comprises selectively choosing a dopant of the first or the second conductivity type for the rapidly diffusing dopant.
3. The method according to claim 1, which comprises selecting the dopant from the group consisting of selenium and sulfur.
4. The method according to claim 1, which comprises introducing the dopant by ion implantation via a mask having openings of different widths.
5. The method according to claim 1, which comprises introducing the dopant by ion implantation via a VLD mask.
6. The method according to claim 1, wherein the following relationship holds true in the edge region defined between an edge A and a beginning C of a cell array:
3
C
A
(
x
)
x
>
1.5
q
c
where (x) is a charge density in the edge region and qc is a critical charge of the edge region.