1460746070-6fd65c68-7625-471e-9542-d67bbbb8e5d4

1. A folding toothbrush having an open position and a closed position, the toothbrush comprising:
a two-piece handle, the second piece configured to be received by the first piece in the closed position, the second piece comprising a head and at least one bristle;
a pair of pivots;
a pair of first slots, each pivot being in a corresponding first slot and configured to both rotate and slide within the first slot;
a second slot; and
a protrusion configured to substantially conform within the second slot when in the open position.
2. The folding toothbrush of claim 1, wherein each of the pair of first slots comprise a rotating section and a locking section.
3. The folding toothbrush of claim 1, wherein each of the pair of pivots is configured to be in the rotating section of the corresponding first slot in the open position and in the locking section of the corresponding first slot in the closed position.
4. The folding toothbrush of claim 1, further comprising a third slot, at least one side of the protrusion configured to substantially conform within the third slot when in the closed position.
5. The folding toothbrush of claim 1, wherein the pivot is configured to substantially conform within the locking section when in the open position.
6. The folding toothbrush of claim 1, wherein the rotating section being generally circular.
7. The folding toothbrush of claim 1, wherein the locking section being generally a trapezoid, rectangle or parallelogram in shape.
8. The folding toothbrush of claim 1, wherein the pivot can rotate about between 165\xb0 and 195\xb0 within the first slot.
9. The folding toothbrush of claim 1, wherein the pivot can rotate about 180\xb0 within the first slot.
10. The folding toothbrush of claim 1, wherein three sides of the protrusion substantially conform within the second slot.
11. The folding toothbrush of claim 1, wherein each of the pair of first slots further comprise a connecting section, wherein the depth of the connecting section is less than the depth of the other sections.
12. A folding toothbrush having an open position and a closed position, the toothbrush comprising:
a two-piece handle, the second piece configured to be received by the first piece in the closed position, the second piece comprising a head and at least one bristle;
a pair of semicircular pivots;
a pair of first slots corresponding to the pair of semi-circular pivots, each pivot being in the corresponding first slot and configured to both rotate and slide within the first slot, each of the pair of first slots having a semi-circular region and an elongated region;
a pair of protrusions;
a pair of second slots corresponding to the pair of protrusions and each protrusion configured to substantially conform within the corresponding second slot when in the open position; and
a pair of third slots also corresponding to the pair of protrusions and each protrusion configured to fit within the corresponding third slot when in the closed position.
13. A method of operating a folding toothbrush comprising:
providing the folding toothbrush;
opening the folding toothbrush from a closed position, comprising:
rotating a second section of the toothbrush in relation to a first section at a pivot;
sliding the second section in relation to the first section, wherein the pivot slides into a first securing slot; and
sliding a protrusion into a second securing slot; and

using the toothbrush to brush at least one tooth.
14. The method of claim 13, wherein the step of rotating further comprises rotating the second section between about 165\xb0 and 195\xb0.
15. The method of claim 13, wherein the step of sliding the second section further comprises sliding the pivot a distance equal to the length of the pivot.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An apparatus for plasma etching, comprising:
an inductively coupled plasma process chamber;
an electrostatic substrate support pedestal disposed in the process chamber;
a reticle adapter positioned on the pedestal, the reticle adapter having an opening to receive a photomask reticle;
a co-axial coil positioned proximate the process chamber for inductively coupling power to a plasma formed within the process chamber;
an RF power source coupled to the co-axial coil for forming the plasma within the process chamber;
an ion-radical shield disposed in the process chamber above the pedestal and adapted to control the spatial distribution of charged and neutral species of the plasma; wherein the ion-radical shield comprises a substantially flat member made from quartz, ceramic, or anodized aluminum, the substantially flat member having a plurality of apertures, wherein a plurality of legs are utilized to support the ion-radical shield above the pedestal; and
an edge ring disposed on the reticle adapter and having the plurality of support legs extending therefrom.
2. The apparatus of claim 1, wherein the plurality of legs supports the ion-radical shield at a distance of 1.5 inches to 4 inches above the pedestal.
3. The apparatus of claim 1, wherein each of the the plurality of apertures has a diameter of about 1.25 cm.
4. The apparatus of claim 1, wherein the shield is disposed about 2 inches above the substrate support pedestal.
5. The apparatus of claim 1, wherein the substantially flat member is electrically isolated from the chamber.
6. The apparatus of claim 5, wherein the substantially flat member comprises a plate having the plurality of apertures formed therethrough.
7. The apparatus of claim 6, wherein the apertures are arranged in a square grid pattern.
8. The apparatus of claim 1, wherein the legs support the plate in a substantially parallel, spaced apart relation with respect to the pedestal.
9. The apparatus of claim 6, wherein each of the plurality of legs is secured to an underside of the plate.
10. The apparatus of claim 1, wherein the ion-radical shield comprise a plurality of apertures for defining an open area of the plate from about 2 percent to about 90 percent.
11. An apparatus for plasma etching, comprising:
a process chamber;
a substrate support pedestal disposed in the process chamber and having an opening adapted to receive a photomask reticle;
an RF power source;
an antenna comprising a co-axial coil positioned to inductively couple power from the RF power source to a plasma within the process chamber; and
an ion-radical shield for controlling the spatial distribution of charged and neutral species of the plasma, wherein said ion-radical shield further comprises:
a substantially flat member having an areal extent larger than an areal extent of the substrate support pedestal;
a plurality of apertures formed through the member and configured to promote center fast etching; and
a plurality of legs secured to the member above the substrate support pedestal, wherein the legs do not extend beyond the areal extent of the member.
12. The apparatus of claim 11, wherein the substantially flat member comprises quartz, ceramic, or anodized aluminum.
13. The apparatus of claim 12, wherein the plurality of apertures have size, spacing and geometric arrangement that vary across the ion-radical shield.
14. The apparatus of claim 13, wherein the ion-radical shield has an areal extent larger than an areal extent of the substrate support pedestal.
15. An apparatus for plasma etching, comprising:
a process chamber having a conductive body and a dielectric ceiling;
a substrate support pedestal disposed in the process chamber, the substrate support having a reticle adapter with an opening substantially centered with respect to the pedestal;
an RF power source;
a co-axial antenna positioned to inductively couple power from the RF power source to a plasma within the process chamber; and
an ion-radical shield disposed in the chamber above the pedestal and comprising a plurality of apertures adapted to control the spatial distribution of charged and neutral species of the plasma; wherein the ion-radical shield has an areal extent larger than an areal extent of the substrate support pedestal, wherein a plurality of legs are secured to the ion-radical shield and support the ion-radical shield a distance of about 1.5 inches (3.81 cm) to about 4 inches (10.16 cm) above the pedestal.
16. The apparatus of claim 15, wherein the plurality of legs are disposed within a volume defined between the ion-radical shield and the substrate support pedestal.
17. The apparatus of claim 15, wherein the plurality of apertures define an open area of about 30 percent.
18. The apparatus of claim 15, wherein the plurality of apertures have size, spacing and geometric arrangement that vary across the ion-radical shield.
19. The apparatus of claim 15, wherein the ion-radical shield is fabricated from at least one of ceramic, quartz, or anodized aluminum.
20. An apparatus for plasma etching, comprising:
an inductively coupled plasma process chamber;
a substrate support pedestal disposed in the process chamber, the substrate support comprising a cathode and a reticle adapter covering an upper surface of the cathode having a top portion with an opening to receive a photomask reticle;
an RF power source for forming a plasma within the chamber;
an ion-radical shield disposed in the chamber above the pedestal and comprising a plurality of apertures arranged in a square grid pattern for controlling a spatial distribution of charged and neutral species of the plasma, wherein the ion-radical shield is fabricated from anodized aluminum and has an areal extent larger than an areal extent of the photomask reticle;
a plurality of legs extending from the substrate support pedestal and secured to the ion-radical shield, wherein the legs do not extend beyond the areal extent of the ion-radical shield, wherein the ion-radical shield has a height relative to the pedestal that controls etch rate during plasma processing and the height is set by the legs utilized to support the ion-radical shield above the pedestal, wherein the height is between about 1.5 inches (3.81 cm) to about 4 inches (10.16 cm) in a process chamber having a distance of about 6 inches between the pedestal and a ceiling of the process chamber; and
an edge ring disposed on the reticle adapter and having the plurality of legs extending therefrom.