1. A composition for providing a hydrophobic wateralcohol repellent surface on a non-woven polypropylene barrier composite which comprises a perfluorinated ester and a hydrophobic non-ionic wax, wherein the perfluorinated ester and the hydrophobic non-ionic wax each comprises 10 to 60% by weight of the composition making up a total of at least 75% by weight of the composition, with other components which do not harmfully affect the hydrophobic wateralcohol repellent properties of the non-woven polypropylene barrier composite comprising up to 25% of the composition.
2. The composition of claim 1, wherein the perfluorinated ester is a straight chain ester comprising straight chain alkyl groups where a fluorocarbon portion thereof is a C1-C6 fluorocarbon.
3. The composition of claim 1, wherein the perfluorinated ester has the formula CF3(CF2)nCH2CH2COOR; where n\u22665, and R is alkyl chain with greater than 16-24 carbon atoms.
4. The composition of claim 1, wherein the perfluorinated ester has the formula
where R is a C16-C24 straight chain alkyl group, Rf is C4,-C6 fluorocarbon and n is 4-10.
5. The composition of claim 1, wherein the perfluorinated ester has the formula CF3(CF2)nCOOR; where R is an alkyl sulfonate or urethane chain and n\u22675.
6. The composition of claim 1, wherein the hydrophobic non-ionic wax has the formula CH3(CH2)mCH3, where m is >20.
7. The composition of claim 1, wherein the hydrophobic non-ionic wax has the formula (CH3(CH2)m\u2014CO\u2014O\u2014(CH2)nCH3 where m and n are 7-21).
8. The composition of claim 1, wherein the hydrophobic non-ionic wax has the formula (CH3(CH2)m\u2014CO\u2014NH\u2014(CH2)nCH3 where m and n are 7-21).
9. A non-woven polypropylene barrier composite which comprises a surface having thereon a perfluorinated ester and a hydrophobic non-ionic wax, wherein the perfluorinated ester and the hydrophobic non-ionic wax each comprises 10 to 60% by weight of the composition making up a total of at least 75% by weight of the composition, with other components which do not harmfully affect the hydrophobic wateralcohol repellent properties of the non-woven polypropylene barrier composite comprising up to 25% of the composition.
10. The composite of claim 9, wherein the perfluorinated ester is a straight chain ester comprising straight chain alkyl groups where a fluorocarbon portion thereof is a C1-C6 fluorocarbon.
11. The composite of claim 9, wherein the perfluorinated ester has the formula CF3(CF2)nCH2CH2COOR; where n\u22665, and R is alkyl chain with greater than 16-24 carbon atoms.
12. The composite of claim 9, wherein the perfluorinated ester has the formula
where R is a C16-C24 straight chain alkyl group, Rf is C4,-C6 fluorocarbon and n is 4-10.
13. The composite of claim 9, wherein the perfluorinated ester has the formula CF3(CF2)mCOOR; where R is an alkyl sulfonate or urethane chain and n\u22675.
14. The composite of claim 9, wherein the hydrophobic non-ionic wax has the formula CH3(CH2)mCH3, where m is >20.
15. The composite of claim 9, wherein the hydrophobic non-ionic wax has the formula (CH3(CH2)m\u2014CO\u2014O\u2014(CH2)nCH3 where m and n are 7-21).
16. The composite of claim 9, wherein the hydrophobic non-ionic wax has the formula (CH3(CH2)m\u2014CO\u2014NH\u2014(CH2)nCH3 where m and n are 7-21).
17. A process for forming a hydrophobic wateralcohol repellent surface on a non-woven polypropylene barrier composite which comprises adding to polypropylene which is to form the non-woven polypropylene barrier composite a composition which comprises a perfluorinated ester and a hydrophobic non-ionic wax, wherein the perfluorinated ester and the hydrophobic non-ionic wax each comprises 10 to 60% by weight of the composition making up a total of at least 75% by weight of the composition, with other components which do not harmfully affect the hydrophobic wateralcohol repellent properties of the non-woven polypropylene barrier composite comprising up to 25% of the composition, and then extruding the polypropylene containing said composition, whereby the composition is incorporated in an amount such that there is 0.5 to 5% by weight of the composition in the resultant non-woven polypropylene barrier composite.
18. The process of claim 17, wherein the perfluorinated ester is a straight chain ester comprising straight chain alkyl groups where a fluorocarbon portion thereof is a C1-C6 fluorocarbon.
19. The process of claim 17, wherein the perfluorinated ester has the formula CF3(CF2)nCH2CH2COOR; where n\u22665, and R is alkyl chain with greater than 16-24 carbon atoms.
20. The process of claim 17, wherein the perfluorinated ester has the formula
where R is a C16-C24 straight chain alkyl group, Rf is C4, -C6 fluorocarbon and n is 4-10.
21. The process of claim 17, wherein the perfluorinated ester has the formula CF3(CF2)nCOOR; where R is an alkyl sulfonate or urethane chain and n\u22665.
22. The process of claim 17, wherein the hydrophobic non-ionic wax has the formula CH3(CH2)mCH3, where m is >20.
23. The process of claim 17, wherein the hydrophobic non-ionic wax has the formula (CH3(CH2)m\u2014CO\u2014O\u2014(CH2)nCH3 where m and n are 7-21).
24. The process of claim 17, wherein the hydrophobic non-ionic wax has the formula Wax (CH3(CH2)m\u2014CO\u2014NH\u2014(CH2)nCH3 where m and n are 7-21).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing complementary metal oxide semiconductor (CMOS) image sensor structures, comprising the steps of:
(a) forming a gate insulating layer, a conductive layer and an ion implantation barrier layer on a semiconductor substrate;
(b) patterning said ion implantation barrier layer, said conductive layer, and said gate insulating layer;
(c) forming a photoresist layer on said patterned ion implantation barrier layer, said conductive layer, and said gate insulating layer and patterning said photoresist layer to define a photodiode region in said substrate; and
(d) implanting low-concentration dopant ions into said photodiode region using said photoresist layer pattern as an ion implantation mask to form a low-concentration dopant region of a photodiode.
2. The method as claimed in claim 1, wherein said low-concentration dopant region has a depth greater than a height of said conductive layer.
3. The method as claimed in claim 2, wherein said conductive layer has a thickness between 1500 and 2600 \u212b.
4. The method as claimed in claim 2, wherein said low-concentration dopant region has a depth between 2500 and 3500 \u03bcm.
5. The method as claimed in claim 1, wherein said ion implantation barrier layer comprises an oxide layer andor a nitride layer.
6. The method as claimed in claim 5, wherein said ion implantation barrier layer comprises a TEOS (Tetra Ethyl Ortho Silicate) based insulating layer.
7. The method as claimed in claim 1, further comprising a step of implanting high-concentration dopant ions into the low-concentration dopant region after implanting said low-concentration dopant ions, so as to reduce a current generated by said image sensor.
8. The method as claimed in claim 1, further comprising forming a p-type epitaxial layer on or in said substrate before said gate insulating layer is formed on said substrate.
9. The method as claimed in claim 1, wherein the step of forming said gate insulating layer, said conductive layer and said ion implantation barrier layer comprises blanket depositing said conductive layer and said ion implantation barrier layer onto said gate insulating layer to form a composite gate electrode layer.
10. The method as claimed in claim 9, wherein the step of patterning said ion implantation barrier layer, said conductive layer, and said gate insulating layer comprises depositing, selectively irradiating and developing a second photoresist on said composite gate electrode layer, then sequentially etching said ion implantation barrier layer, said conductive layer and said gate insulating layer.
11. The method as claimed in claim 1, wherein the step of patterning said photoresist layer prevents ion from being implanted into a sourcedrain terminal region of a CMOS transistor comprising said gate electrode.
12. The method as claimed in claim 11, further comprising the step of forming said sourcedrain terminal region of said CMOS transistor.
13. The method as claimed in claim 1, further comprising the step of removing said ion implantation barrier layer after the step of implanting low-concentration dopant ions into said photodiode region.
14. The method as claimed in claim 1, further comprising the step of implanting high-concentration ions into said photodiode region.