1. A method of simulating memory allocation errors in a software application, the method including:
determining a range of memory block sizes in a memory allocation function which results in a memory allocation failure, the range of memory block sizes defined by a first simulation criteria and including all memory block sizes between a minimum threshold and a maximum threshold;
initializing an application, and simultaneously executing the memory allocation function;
triggering a memory allocation failure if the application requires a memory value within the range of memory block sizes; and
varying the range of memory block sizes based on a second simulation criteria,
wherein the first simulation criteria and second simulation criteria are determined by a pre-determined range of memory block sizes for a memory failure simulation.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A scanning exposure photo-mask having an exposure pattern which has a longitudinal direction, said scanning exposure photo-mask being placed in an exposure system so that said longitudinal direction of said pattern is parallel to a longitudinal direction of a slit of said exposure system.
2. The scanning exposure photo-mask as claimed in claim 1, wherein said exposure pattern comprises plural line-shaped patterns extending in a first direction along which said slit extends and said line-shaped patterns are aligned in a second direction perpendicular to said first direction.
3. The scanning exposure photo-mask as claimed in claim 2, wherein said exposure pattern comprises one of a word line pattern and a bit line pattern.
4. A scanning exposure system having a slit plate having a slit and a photo-mask stage mounted thereon with a scanning exposure photo-mask as claimed in claim 1.
5. The scanning exposure system as claimed in claim 4, wherein said photo-mask stage allows mounting said scanning exposure photo-mask in different two directions perpendicular to each other.
6. The scanning exposure system as claimed in claim 5, wherein said photo-mask stage and an objective stage mounting an objective sample for exposure are capable of allowing that said longitudinal direction of said exposure pattern of said photo-mask and a longitudinal direction of an exposed pattern on said objective sample are directed in correspondence with said longitudinal direction of said slit.
7. The scanning exposure system as claimed in claim 6, wherein said objective stage is moved by a rotational driving unit for rotating said objective stage by at least an angle of 90 degrees and an X-Y driving unit for moving said objective stage in plane.
8. A method of scanning an exposure beam defined by a slit with reference to a photo-mask having an exposure pattern which has a longitudinal direction, so that said longitudinal direction of said exposure pattern is kept in parallel to a longitudinal direction of said slit during a scanning operation.
9. The method as claimed in claim 8, wherein said slit is fixed in position, and said photo-mask is moved in a direction perpendicular to said longitudinal direction, and an objective sample for exposure is moved in an opposite direction to said direction of movement of said photo-mask.