1. A vending machine for enabling a transaction between a user and of one of a plurality of remote sources, the vending machine comprising:
a communication interface communicatively coupled with each of the plurality of remote sources;
an input interface for receiving an input regarding the selection of one of a group of remote sources;
a speaker;
a microphone, wherein the speaker and the microphone are configured to enable an audio communication with the selected remote source;
a display for providing information from the selected remote source, wherein the information is related to the transaction with the selected remote source; and
a processor that is configured to:
transmit an indication that one of the plurality of remote sources has been selected;
establish, via the communication interface, the audio communication with the selected remote source;
receive, via the communication interface, a control command from the selected remote source that directs a hardware peripheral of the vending machine to perform a function; and
receive an issuance authorization from the selected remote source, wherein the issuance authorization causes a transaction item to be issued.
2. The vending machine for distributing products from remote sources of claim 1, further comprising:
a camera configured to enable a video communication with the selected remote source.
3. The vending machine for distributing products from remote sources of claim 1, further comprising:
a reader that is configured to read information stored on a payment medium.
4. The vending machine for distributing products from remote sources of claim 1, wherein the computer processor is further configured to:
receive a payment from the user;
communicate a payment authorization request associated with the payment to a financial institution;
receive an authorization approval related to the payment authorization request; and
send an indication that the payment has been accepted to the selected remote source.
5. The vending machine for distributing products from remote sources of claim 1, further comprising:
a printer configured to print one or more of a ticket or a receipt.
6. The vending machine for distributing products from remote sources of claim 1, wherein:
the input interface comprises a touchscreen of the display.
7. A method for enabling a transaction between a user and of one of a plurality of remote sources using a vending machine, the method comprising:
receiving an input, via an input interface, to select one of a plurality of remote sources, wherein each of the plurality of remote sources is communicatively coupled with the vending machine via a communication interface;
transmitting an indication that one of the plurality of remote sources has been selected;
establishing, via the communication interface, an audio communication with the selected remote source;
receiving information from the selected source, wherein the information is related to the transaction with the selected remote source;
causing the information to be presented on a display of the vending machine;
receiving, via the communication interface, a control command from the selected remote source that directs a hardware peripheral of the vending machine to perform a function; and
receiving an issuance authorization from the selected remote source, wherein the issuance authorization causes a transaction item to be issued.
8. The method for distributing products from remote sources using a vending machine of claim 7, further comprising:
presenting transaction options from the plurality of remote sources on the display, wherein the plurality of remote sources are selected from a group consisting of entertainment providers, transit providers, and lodging providers.
9. The method for distributing products from remote sources using a vending machine of claim 7, further comprising:
establishing a video communication with the selected remote source using a camera of the vending machine.
10. The method for distributing products from remote sources using a vending machine of claim 7, further comprising:
receiving a request from the selected remote source to print a receipt using a printer of the vending machine.
11. The method for distributing products from remote sources using a vending machine of claim 7, further comprising:
providing an indication that the transaction is completed after the audio communication is terminated.
12. The method for distributing products from remote sources using a vending machine of claim 7, further comprising:
receiving a payment;
communicating a payment authorization request associated with the payment to a financial institution;
receiving an authorization approval related to the payment authorization request; and
sending an indication that the payment has been accepted to the selected remote source.
13. The method for distributing products from remote sources using a vending machine of claim 7, further comprising:
providing a received payment to a payment reconciliation system that analyzes received payment information and expected payments from each of the remote sources to determine how collected revenue is distributed; and
providing a record of the transaction to the payment reconciliation system.
14. The method for distributing products from remote sources using a vending machine of claim 7, wherein:
the method is performed on a server remotely located from the vending machine.
15. A computer program embodied on a computer readable medium, the computer program comprising instructions executable by a computer to:
receive a user input, via an input interface, to select one of a plurality of remote sources, wherein each of the plurality of remote sources is communicatively coupled with the vending machine via a communication interface;
transmit an indication that one of the plurality of remote sources has been selected;
establish, via the communication interface, an audio communication with the selected remote source;
receive information from the selected source, wherein the information is related to the transaction with the selected remote source;
cause the information to be presented on a display of the vending machine;
receive, via the communication interface, a control command from the selected remote source that directs a hardware peripheral of the vending machine to perform a function; and
receive an issuance authorization from the selected remote source, wherein the issuance authorization causes a transaction item to be issued.
16. The computer program embodied on a computer readable medium of claim 15, wherein the computer program further comprises instructions executable by a computer to:
present transaction options from the plurality of remote sources on the display, wherein the plurality of remote sources are selected from a group consisting of entertainment providers, transit providers, and lodging providers.
17. The computer program embodied on a computer readable medium of claim 15, wherein the computer program further comprises instructions executable by a computer to:
establish a video communication with the selected remote source using a camera of the vending machine.
18. The computer program embodied on a computer readable medium of claim 15, wherein the computer program further comprises instructions executable by a computer to:
provide an indication that the transaction is completed after the audio communication is terminated.
19. The computer program embodied on a computer readable medium of claim 15, wherein the computer program further comprises instructions executable by a computer to:
receive a request from the selected remote source to print a receipt using a printer of the vending machine.
20. The computer program embodied on a computer readable medium of claim 15, wherein the computer program further comprises instructions executable by a computer to:
provide a received payment to a payment reconciliation system that analyzes received payment information and expected payments from each of the remote sources to determine how collected revenue is distributed; and
provide a record of the transaction to the payment reconciliation system.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A mechanical memory transistor, comprising:
a substrate having formed thereon a source region and a drain region;
an oxide formed upon a portion of said source region and upon a portion of said drain region;
a pull up electrode positioned above such that a gap is formed between said pull up electrode and said substrate; and
a movable gate having a first position and a second position, said movable gate being located in said gap between said pull up electrode and said substrate;
said movable gate being in contact with said pull up electrode when said movable gate is in said first position;
said movable gate being in contact with said oxide to form a gate region when said movable gate is in said second position;
said movable gate, in conjunction with said source region and said drain region and when said movable gate is in said second position, forming a transistor.
2. The mechanical memory transistor as claimed in claim 1, wherein said movable gate comprises a material which is attractive to said pull up electrode.
3. The mechanical memory transistor as claimed in claim 1, wherein said movable gate comprises a material which is attractive to said source region and said drain region.
4. The mechanical memory transistor as claimed in claim 2, wherein said movable gate comprises a material which is attractive to said source region and said drain region.
5. A mechanical memory element, comprising:
a transistor including,
a substrate having formed thereon a source region and a drain region,
an oxide formed upon a portion of said source region and upon a portion of said drain region,
a pull up electrode positioned above such that a gap is formed between said pull up electrode and said substrate, and
a movable gate having a first position and a second position, said movable gate being located in said gap between said pull up electrode and said substrate, said movable gate being in contact with said pull up electrode when said movable gate is in said first position, said movable gate being in contact with said oxide to form a gate region when said movable gate is in said second position;
a word line operatively connected to said movable gate;
bit sense lines operatively connected to said source region and said drain region; and
a bit pull up line operatively connected to said pull up electrode.
6. The mechanical memory element as claimed in claim 5, wherein said movable gate comprises a material which is attractive to said pull up electrode.
7. The mechanical memory element as claimed in claim 5, wherein said movable gate comprises a material which is attractive to said source region and said drain region.
8. The mechanical memory element as claimed in claim 6, wherein said movable gate comprises a material which is attractive to said source region and said drain region.
9. A mechanical memory transistor, comprising:
a substrate having formed thereon a source region and a drain region;
a first pull down electrode positioned on said substrate;
a second pull down electrode positioned on said substrate; and
a movable gate having a first extension and a second extension, said movable gate having an anchor hinge located between said first and second extensions and located on said substrate between said second pull down electrode and said source and drain regions;
said movable gate being in a first position when said first extension of said movable gate is in contact with said second pull down electrode;
said movable gate being in a second position when said second extension of said movable gate is in contact with said first pull down electrode;
said second extension of said movable gate, in conjunction with said source and drain regions and when said movable gate is in said second position, forming a transistor.
10. The mechanical memory transistor as claimed in claim 9, wherein said movable gate being in a third position when said second extension of said movable gate is in non-contact with said first pull down electrode and said first extension of said movable gate is in non-contact with said second pull down electrode.
11. A mechanical memory element, comprising:
a transistor including,
a substrate having formed thereon a source region and a drain region,
a first pull down electrode positioned on said substrate,
a second pull down electrode positioned on said substrate, and
a movable gate having a first extension and a second extension, said movable gate having an anchor hinge located between said first and second extensions and located on said substrate between said second pull down electrode and said source and drain regions, said movable gate being in a first position when said first extension of said movable gate is in contact with said second pull down electrode, said movable gate being in a second position when said second extension of said movable gate is in contact with said first pull down electrode;
a word line operatively connected to said movable gate;
bit sense lines operatively connected to said source and drain region;
a first bit pull down line operatively connected to said first pull down electrode; and
a second bit pull down line operatively connected to said second pull down electrode.
12. The mechanical memory element as claimed in claim 11, wherein said movable gate being in a third position when said second extension of said movable gate is in non-contact with said first pull down electrode and said first extension of said movable gate is in non-contact with said second pull down electrode.
13. A mechanical memory element, comprising:
a transistor including,
a substrate having formed thereon a first source region, a first drain region,
a second source region, and a second drain region,
a first pull down electrode positioned on said substrate,
a second pull down electrode positioned on said substrate, and
a movable gate having a first extension and a second extension, said movable gate having an anchor hinge located between said first and second extensions and located on said substrate between said second source and drain regions and said first source and drain regions,
said movable gate being in a first position when said first extension of said movable gate is in contact with said first pull down electrode, said movable gate being in a second position when said second extension of said movable gate is in contact with said second pull down electrode, said first extension of said movable gate, in conjunction with said first source and drain regions and when said movable gate is in said first position, forming a first transistor;
a word line operatively connected to said movable gate;
bit sense lines operatively connected to said second source and drain regions and said first source and drain regions;
a first bit pull down line operatively connected to said first pull down electrode; and
a second bit pull down line operatively connected to said second pull down electrode.
14. The mechanical memory element as claimed in claim 13, wherein said movable gate being in a third position when said second extension of said movable gate is in non-contact with said second pull down electrode and said first extension of said movable gate is in non-contact with said first pull down electrode.
15. A mechanical memory transistor, comprising:
a substrate having formed thereon a first source region, a first drain region, a second source region, and a second drain region;
a first pull down electrode positioned on said substrate;
a second pull down electrode positioned on said substrate; and
a movable gate having a first extension and a second extension, said movable gate having an anchor hinge located between said first and second extensions and located on said substrate between said second source and drain regions and said first source and drain regions;
said movable gate being in a first position when said first extension of said movable gate is in contact with said first pull down electrode;
said movable gate being in a second position when said second extension of said movable gate is in contact with said second pull down electrode;
said first extension of said movable gate, in conjunction with said first source and drain regions and when said movable gate is in said first position, forming a first transistor;
said second extension of said movable gate, in conjunction with said second source and drain regions and when said movable gate is in said second position, forming a second transistor.
16. The mechanical memory transistor as claimed in claim 15, wherein said movable gate being in a third position when said second extension of said movable gate is in non-contact with said second pull down electrode and said first extension of said movable gate is in non-contact with said first pull down electrode.
17. A mechanical memory transistor, comprising:
a substrate having formed thereon a source region and a drain region;
an oxide formed upon a portion of said source region and upon a portion of said drain region;
a pull up electrode positioned above such that a gap is formed between said pull up electrode and said substrate;
a pull down electrode located in said source and drain regions; and
a movable gate having a first position and a second position, said movable gate being located in a gap above said pull up electrode and said substrate;
said movable gate being in contact with said pull up electrode when said movable gate is in said first position;
said movable gate being in contact with said oxide to form a gate region when said movable gate is in said second position;
said movable gate, in conjunction with said source and drain regions and when said movable gate is in said second position, forming a transistor.
18. The mechanical memory transistor as claimed in claim 17, wherein said movable gate comprises a material which is attractive to said pull up electrode.
19. The mechanical memory transistor as claimed in claim 17, wherein said movable gate comprises a material which is attractive to said source region and said drain region.
20. The mechanical memory transistor as claimed in claim 18, wherein said movable gate comprises a material which is attractive to said source region and said drain region.
21. A mechanical memory element, comprising:
a transistor including,
a substrate having formed thereon a source region and a drain region,
an oxide formed upon a portion of said source region and upon a portion of said drain region,
a pull up electrode positioned above such that a gap is formed between said pull up electrode and said substrate,
a pull down electrode located in said source and drain regions, and
a movable gate having a first position and a second position, said movable gate being located in a gap above said pull up electrode and said substrate, said movable gate being in contact with said pull up electrode when said movable gate is in said first position, said movable gate being in contact with said oxide to form
a gate region when said movable gate is in said second position;
a word line operatively connected to said movable gate;
bit sense lines operatively connected to said source region and said drain region;
a bit pull up line operatively connected to said pull up electrode; and
a bit pull down line operatively connected to said pull down electrode.
22. The mechanical memory element as claimed in claim 21, wherein said movable gate comprises a material which is attractive to said pull up electrode.
23. The mechanical memory element as claimed in claim 21, wherein said movable gate comprises a material which is attractive to said source region and said drain region.
24. The mechanical memory element as claimed in claim 22, wherein said movable gate comprises a material which is attractive to said source region and said drain region.
25. A mechanical memory transistor, comprising:
a substrate having formed thereon a source region and a drain region, said source and drain regions forming a transistor body;
a pull down electrode positioned on said substrate; and
a movable gate having a first extension and a second extension, said movable gate having an anchor hinge located between said first and second extensions and located on said substrate between said pull down electrode and said source and drain regions;
said movable gate being in a first position when said first extension of said movable gate is in contact with said pull down electrode;
said movable gate being in a second position when said second extension of said movable gate is in contact with said transistor body;
said second extension of said movable gate, in conjunction with said source and drain regions and when said movable gate is in said second position, forming a transistor.
26. The mechanical memory transistor as claimed in claim 25, wherein said movable gate being in a third position when said second extension of said movable gate is in non-contact with said transistor body and said first extension of said movable gate is in non-contact with said pull down electrode.
27. A mechanical memory element, comprising:
a transistor including,
a substrate having formed thereon a source region and a drain region, said source and drain regions forming a transistor body,
a pull down electrode positioned on said substrate, and
a movable gate having a first extension and a second extension, said movable gate having an anchor hinge located between said first and second extensions and located on said substrate between said pull down electrode and said source and drain regions, said movable gate being in a first position when said first extension of said movable gate is in contact with said pull down electrode, said movable gate being in a second position when said second extension of said movable gate is in contact with said transistor body;
a word line operatively connected to said movable gate;
bit sense lines operatively connected to said source and drain region;
a first bit pull down line operatively connected to said transistor body; and
a second bit pull down line operatively connected to said pull down electrode.
28. The mechanical memory element as claimed in claim 27, wherein said movable gate being in a third position when said second extension of said movable gate is in non-contact with said transistor body and said first extension of said movable gate is in non-contact with said pull down electrode.
29. A mechanical memory element, comprising:
a transistor including,
a substrate having formed thereon a first source region, a first drain region, a second source region, and a second drain region, said first source and drain regions forming a transistor body,
a pull down electrode positioned on said substrate, and
a movable gate having a first extension and a second extension, said movable gate having an anchor hinge located between said first and second extensions and located on said substrate between said second source and drain regions and said first source and drain regions,
said movable gate being in a first position when said first extension of said movable gate is in contact with said transistor body, said movable gate being in a second position when said second extension of said movable gate is in contact with said pull down electrode, said first extension of said movable gate, in conjunction with said first source and drain regions and when said movable gate is in said first position, forming a first transistor;
a word line operatively connected to said movable gate;
bit sense lines operatively connected to said second source and drain regions and said first source and drain regions;
a first bit pull down line operatively connected to said transistor body; and
a second bit pull down line operatively connected to said pull down electrode.
30. The mechanical memory element as claimed in claim 29, wherein said movable gate being in a third position when said second extension of said movable gate is in non-contact with said pull down electrode and said first extension of said movable gate is in non-contact with said transistor body.
31. A mechanical memory transistor, comprising:
a substrate having formed thereon a first source region, a first drain region, a second source region, and a second drain region, said first source and drain regions forming a transistor body;
a pull down electrode positioned on said substrate; and
a movable gate having a first extension and a second extension, said movable gate having an anchor hinge located between said first and second extensions and located on said substrate between said second source and drain regions and said first source and drain regions;
said movable gate being in a first position when said first extension of said movable gate is in contact with said transistor body;
said movable gate being in a second position when said second extension of said movable gate is in contact with said pull down electrode;
said first extension of said movable gate, in conjunction with said first source and drain regions and when said movable gate is in said first position, forming a first transistor;
said second extension of said movable gate, in conjunction with said second source and drain regions and when said movable gate is in said second position, forming a second transistor.
32. The mechanical memory transistor as claimed in claim 31, wherein said movable gate being in a third position when said second extension of said movable gate is in non-contact with said pull down electrode and said first extension of said movable gate is in non-contact with said transistor body.
33. A mechanical memory transistor, comprising:
a substrate having formed thereon a source region and a drain region;
an oxide formed upon a portion of said source region and upon a portion of said drain region;
a pull up electrode positioned above such that a gap is formed between said pull up electrode and said substrate; and
a movable gate having a first position and a second position, said movable gate being located in a gap above said pull up electrode and said substrate;
said movable gate being in contact with said pull up electrode when said movable gate is in said first position;
said movable gate being in contact with said oxide to form a gate region when said movable gate is in said second position;
said movable gate, in conjunction with said source and drain regions and when said movable gate is in said second position, forming a transistor.
34. The mechanical memory transistor as claimed in claim 33, wherein said movable gate comprises a material which is attractive to said pull up electrode.
35. The mechanical memory transistor as claimed in claim 33, wherein said movable gate comprises a material which is attractive to said source region and said drain region.
36. The mechanical memory transistor as claimed in claim 33, wherein said movable gate comprises a material which is attractive to said source region and said drain region.
37. A mechanical memory element, comprising:
a transistor including,
a substrate having formed thereon a source region and a drain region, said first source and drain regions forming a transistor body,
an oxide formed upon a portion of said source region and upon a portion of said drain region,
a pull up electrode positioned above such that a gap is formed between said pull up electrode and said substrate, and
a movable gate having a first position and a second position, said movable gate being located in a gap above said pull up electrode and said substrate, said movable gate being in contact with said pull up electrode when said movable gate is in said first position, said movable gate being in contact with said oxide to form a gate region when said movable gate is in said second position;
a word line operatively connected to said movable gate;
bit sense lines operatively connected to said source region and said drain region;
a bit pull up line operatively connected to said pull up electrode; and
a bit pull down line operatively connected to said transistor body.
38. The mechanical memory element as claimed in claim 37, wherein said movable gate comprises a material which is attractive to said pull up electrode.
39. The mechanical memory element as claimed in claim 37, wherein said movable gate comprises a material which is attractive to said source region and said drain region.
40. The mechanical memory element as claimed in claim 37, wherein said movable gate comprises a material which is attractive to said source region and said drain region.