1. A method, comprising:
in order to change an operational state of a resource within a computing system that is shared by components of said computing system so that said computing system’s power consumption is altered:
sending a packet over one or more nodal hops within a packet based network within said computing system, said packet containing information pertaining to said power consumption alteration.
2. The method of claim 1 wherein said packet based network comprises nodes having a routing protocol function.
3. The method of claim 2 wherein said packet based network comprisesat least one path having at least one nodal hop between the nodes that act as said path’s ingress point into said network and said path’s egress point from said network.
4. The method of claim 3 wherein said computing system is a distributed computing system.
5. The method of claim 4 wherein at least some of said components reside on different physical platforms that are communicatively coupled by said packet based network.
6. The method of claim 4 wherein at least some of said components reside within different clock domains of said computing system, the circuitry within said different clock domains communicatively coupled by said packet based network.
7. The method of claim 1 wherein said packet based network comprises a ring topology.
8. The method of claim 7 wherein said computing system is not a distributed computing system.
9. The method of claim 1 wherein said packet includes a request to change the operational state of said shared resource.
10. The method of claim 1 wherein said packet includes a response to a request to change the operational state of said shared resource.
11. The method of claim 1 wherein said packet includes notification of a change to the operational state of said shared resource.
12. The method of claim 1 wherein said shared resource is selected from the group consisting of:
a cache;
a clock source; and,
a power supply.
13. A semiconductor chip including a component for use in a computing system, comprising:
circuitry selected from the group consisting of:
a state machine;
a controller; and,
a processor,
said circuitry coupled to media access layer (MAC) circuitry, said circuitry and said MAC layer circuitry to prepare a packet for sending over one or more nodal hops within a packet based network within said computing system, said packet containing information pertaining to a change in the operational state of resource of said computing system for purposes of altering said computing system’s power consumption, said resource shared by said component as well as other components within said computing system.
14. The semiconductor chip of claim 13 wherein packet based network comprises nodes having a routing protocol function.
15. The semiconductor chip of claim 13 wherein said packet based network comprises at least one path having at least one nodal hop between the nodes that act as said path’s ingress point into said network and said path’s egress point from said network.
16. The semiconductor chip of claim 13 wherein said packet based network comprises a ring topology.
17. The semiconductor chip of claim 13 wherein said information comprises a request to change the operational state of said shared resource.
18. The semiconductor chip of claim 13 wherein said information comprises a response to a request to change the operational state of said shared resource.
19. The semiconductor chip of claim 13 wherein said information comprises notification that a change to the operational state of said shared resource has been made.
20. The semiconductor chip of claim 13 wherein said information comprises a broadcast of usage of said shared resource.
21. A computing system comprising:
a semiconductor chip including a component for use in a computing system,
said semiconductor chip comprising:
circuitry selected from the group consisting of:
a state machine;
a controller; and,
a processor,
said circuitry coupled to media access layer (MAC) circuitry, said circuitry and said MAC layer circuitry to prepare a packet for sending over one or more nodal hops within a packet based network within said computing system, said packet containing information pertaining to a change in the operational state of resource of said computing system for purposes of altering said computing system’s power consumption, said resource shared by said component as well as other components within said computing system; and,
a cable connector to connect to a copper cable, said copper cable being a physical line within said packet based network that said packet is transported over via said MAC later circuitry.
22. The computing system of claim 21 wherein packet based network comprises nodes having a routing protocol function.
23. The computing system of claim 21 wherein said packet based network comprises at least one path having at least one nodal hop between the nodes that act as said path’s ingress point into said network and said path’s egress point from said network.
24. The computing system of claim 21 wherein said computing system is a distributed computed system.
25. The computing system of claim 21 wherein said packet based network comprises a ring topology.
26. The computing system of claim 25 wherein said computing system is not a distributed computing system.
27. The computing system of claim 21 wherein said information comprises a request to change the operational state of said shared resource.
28. The computing system of claim 21 wherein said information comprises a response to a request to change the operational state of said shared resource.
29. The computing system of claim 21 wherein said information comprises notification that a change to the operational state of said shared resource has been made.
30. The computing system pf claim 21 wherein said information comprises a broadcast of usage of said shared resource.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A reflection plate for semiconductor heat treatment, which comprises a disk-shaped or ring-shaped plate of optically transmissible material and a plate of inorganic material hermetically enclosed in said disk-shaped or ring-shaped plate;
wherein said plate of inorganic material has at least one side in contact with said plate of optically transmittable material, said at least one side having a surface roughness of Ra 0.1 to 10.0 m, said at least one side being formed with grooves therein.
2. A reflection plate for semiconductor heat treatment as set forth in claim 1, wherein both of said plate of optically transmissible material and said plate of inorganic material are ring-shaped, said grooves formed in said plate of inorganic material including grooves extending linearly and continuously from the inner periphery to the outer periphery thereof.
3. A reflection plate for semiconductor heat treatment as set forth in claim 1, wherein both of said plate of optically transmissible material and said plate of inorganic material are disk-shaped, said grooves formed in said plate of inorganic material including grooves extending linearly and continuously from one outer periphery to another outer periphery opposite said one outer periphery thereof.
4. A reflection plate for semiconductor heat treatment as set forth in claim 3, wherein said grooves formed in the plate of inorganic material are extending centrally thereof.
5. A reflection plate for semiconductor heat treatment as set forth in one of claims 1 through 4, wherein said grooves formed in the plate of inorganic material include one or a plurality of con-centrically extending ones.
6. A reflection plate for semiconductor heat treatment as set forth in claim 5, wherein said plate of inorganic material having a surface is defined by said grooves formed therein in a substantially uniformly divided manner.
7. A reflection plate for semiconductor heat treatment as set forth in claim 6, wherein the inside pressure of said plate of optically transmissible material hermetically enclosing said plate of inorganic material is reduced down to 200 torr or less.
8. A reflection plate for semiconductor heat treatment as set forth in one of claims 1 through 4, wherein said plate of inorganic material has at least one hole bored in the direction of thickness thereof at a position where said grooves intersect each other.
9. A reflection plate for semiconductor heat treatment as set forth in claim 6, wherein said plate of inorganic material has at least one hole bored in the direction of thickness thereof at a position where said grooves intersect each other.
10. A reflection plate for semiconductor heat treatment as set forth in claim 8, wherein said at least one hole is centrally formed in said plate of inorganic material.
11. A reflection plate for semiconductor heat treatment as set forth in claim 1, wherein said grooves formed in said plate of inorganic material have a total length 1 to 10 times the circumferential length of said plate.
12. A reflection plate for semiconductor heat treatment as set forth in claim 8, wherein said grooves formed in said plate of inorganic material have a total length 1 to 10 times the circumferential length of said plate.
13. A reflection plate for semiconductor heat treatment as set forth in claim 9, wherein said grooves formed in said plate of inorganic material have a total length 1 to 10 times the circumferential length of said plate.
14. A method of manufacturing the reflection plate for semiconductor heat treatment as set forth in any one of claims 1 through 4 comprising the steps of
providing a first plate member of optically transmissible material with a recess for accommodating a plate of inorganic material having a surface formed with grooves;
forming a gas vent in the floor of said recess;
accommodating said plate of inorganic material in said recess such that said surface formed with grooves is brought into contact with the floor of said recess before covering said recess with a second plate member of optically transmissible material;
discharging ambient gases within the recess by way of the gas vent while the first plate member and the second plate member are subjected to fusion treatment to each other at a temperature of 1200 C. or higher; and
closing said gas vent after the fusion treatment.
15. A method of manufacturing the reflection plate for semiconductor heat treatment comprising the steps of
providing a first plate member of optically transmissible material with a recess for accommodating a plate of inorganic material having a surface formed with grooves;
forming a gas vent in the floor of said recess;
accommodating said plate of inorganic material in said recess such that said surface formed with grooves is brought into contact with the floor of said recess before covering said recess with a second plate member of optically transmissible material;
discharging ambient gases within the recess by way of the gas vent while the first plate member and the second plate member are subjected to fusion treatment to each other at a temperature of 1200 C. or higher; and
closing said gas vent after the fusion treatment.
16. A reflection plate for semiconductor heat treatment, which comprises a disk-shaped or ring-shaped plate of optically transmissible material and a plate of inorganic material hermetically enclosed in said disk-shaped or ring-shaped plate;
wherein said plate of inorganic material has at least one side in contact with said plate of optically transmittable material, said at least one side having a surface roughness of Ra 0.1 to 10.0 m, said plate of optically transmittable material in contact with said plate of inorganic material having at least one side formed with grooves therein.
17. A reflection plate for semiconductor heat treatment as set forth in claim 16, wherein both said plate of optically transmissible material and said plate of inorganic material are ring-shaped, said plate of optically transmissible material having fusing surfaces at inner and outer peripheries thereof, said grooves including grooves extending linearly and continuously from the fusing surface of said inner periphery to the fusing surface of said outer periphery.
18. A reflection plate for semiconductor heat treatment as set forth in claim 16, wherein both said plate of optically transmissible material and said plate of inorganic material are disk-shaped, said plate of optically transmissible material having a fusing surface at an outer periphery thereof, said grooves including grooves extending linearly and continuously from the fusing surface of one outer periphery to the fusing surface of another outer periphery opposite said one outer periphery.