1. A method to create topography in material deposited above a wafer substrate, the method comprising:
etching a first deposited layer to form a dummy structure above the substrate, the dummy structure adapted to form excess dielectric volume on top of the dummy structure during dielectric deposition;
depositing first dielectric material having a top surface above the first deposited layer, wherein a first height of the top surface of first dielectric material directly above the dummy structure is higher above the substrate than a second height of the top surface of first dielectric material adjacent to the dummy structure;
performing a first CMP step on the first dielectric material, wherein, after the first CMP step, the first height remains higher than the second height; and,
after the first CMP step, depositing a second layer having a top surface above the first dielectric material, wherein a third height of the top surface of the second layer directly above the dummy structure is higher above the substrate than a fourth height of the top surface of the second layer adjacent to the dummy structure.
2. The method of claim 1 wherein the dummy structure is formed outside of an array area, and, during the etching step, a plurality of first features are etched from the first layer in the array area.
3. The method of claim 2 wherein the second layer is second dielectric material.
4. The method of claim 3 wherein second features are formed in the array area after the first CMP step and before the step of depositing a second layer, and wherein the second dielectric material is deposited on and between the second features.
5. The method of claim 4 further comprising performing a second CMP step on the second layer.
6. The method of claim 2 further comprising, after the first CMP step and before the step of depositing the second layer:
depositing a third layer on the first dielectric material; and
patterning and etching the third layer to form:
a) second features in the array area, and
b) an alignment or overlay structure directly above the dummy structure.
7. The method of claim 6 wherein the second layer is not dielectric material.
8. The method of claim 7 further comprising detecting a boundary between the third height and the fourth height, and using the boundary to locate the alignment or overlay structure.
9. A method to locate a buried overlay or alignment structure, the method comprising:
forming a dummy structure in a first deposited layer;
depositing first dielectric material above the dummy structure, the first dielectric material having a top surface;
performing a first CMP step on the first dielectric material, wherein, after the first CMP step, the top surface of the first dielectric material has a first height directly above the dummy structure and a second height adjacent to the dummy structure, the first height greater than the second height;
forming the overlay or alignment structure directly above the dummy structure and above the first dielectric material;
depositing a second layer having a top surface above the overlay or alignment structure, wherein the top surface of the second layer has a third height directly above the overlay or alignment structure and a fourth height adjacent to the overlay or alignment structure, the third height greater than the fourth height; and
locating the overlay or alignment mark by identifying a boundary between the third height and the fourth height.
10. The method of claim 9 wherein the dummy structure is formed outside of an array area, and wherein the array area comprises first patterned features.
11. The method of claim 10 wherein the first features are portions of a first device level.
12. The method of claim 11 wherein the first device level has at least a second device level monolithically formed above it in a monolithic three memory dimensional array.
13. A method to produce topography in material deposited above a wafer substrate, the method comprising:
depositing a first layerstack;
etching the first layerstack to form first features in an array area and a dummy structure outside of the array area;
depositing first dielectric material over the first features and the dummy structure;
planarizing the first dielectric material to expose the first features wherein, after the planarizing step, a first thickness of dielectric material remains directly on top of the dummy structure;
depositing a second layerstack above the first features and the dummy structure;
patterning and etching the second layerstack to form second features; and
depositing second dielectric material having a top surface above the second features and the dummy structure, wherein the top surface of second dielectric material has a first height directly above the dummy structure and a second height adjacent to the dummy structure, the first height higher above the substrate than the second height.
14. The method of claim 13 wherein the planarizing step comprises CMP.
15. The method of claim 13 wherein the first features are substantially parallel, substantially coplanar lines.
16. The method of claim 15 wherein the second features are pillars.
17. The method of claim 16 wherein the pillars comprise deposited semiconductor material.
18. The method of claim 17 wherein, in the completed device, each of the pillars comprises a vertically oriented diode.
19. The method of claim 13 wherein the first features and second features are portions of a first memory level.
20. The method of claim 19 wherein the first memory level has at least a second memory level monolithically formed above it in a monolithic three dimensional memory array.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A compound of the formula
wherein R and R\u2032 are each independently selected from (i) an alkyl group, including substituted and unsubstituted alkyl groups, and wherein heterto atoms either may or may not be present in the alkyl group, (ii) an alylene group, including substituted and unsubstituted alkylene groups, and wherein hetero atoms either may or may not be present in the alkylene group, (iii) an arylene group, including substituted and unsubstituted arylene groups, and wherein hetero atoms either may or may not be present in the arylene group (iv) an arylalkylene group, including substituted and unsubstituted arylalkylene groups, and wherein hetero atoms either may or may not be present in the arylalkylene group, (v) an alkylarylene group, including substituted and unsubstituted alkylarylene groups, and wherein hetero atoms either may or may not be present in the alkylarylene group, (vi) an alkyleneoxy group, including substituted and unsubstituted alkyleneoxy groups, and wherein hetero atoms either may or may not be present in the alkyleneoxy group, (vii) an aryleneoxy group, including substituted and unsubstituted aryleneoxy groups, and wherein hetero atoms either may or may not be present in the aryleneoxy group, (viii) an arylalkyleneoxy group, including substituted and unsubstituted arylalkyleneoxy groups, and wherein hetero atoms either may or may not be present in the arylalkyleneoxy group, (ix) an alkylaryleneoxy group, including substituted and unsubstituted alkylaryleneoxy groups, and wherein hetero atoms either may or may not be present in the alkylaryleneoxy group, (x) a polyalkyleneoxy group, (xi) a polyaryleneoxy group, (xii) a polyarylalkyleneoxy group, (xiii) a polyalkylaryleneoxy group, (xiv) a heterocyclic group, (xv) a silylene group, (xvi) a siloxane group, (xvii) a polysilylene group, (xviii) a polysiloxane group, or (xix) hydrogen, provided both R and R\u2032 cannot be hydrogen.
wherein X is a (i) direct bond, (ii) an oxygen atom, (iii) a nitrogen atom, (iv) a sulfur atoms, (v) a group of the formula -NR40- wherein R40 is a hydrogen atom, an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, an aryl group, including substituted and unsubstituted aryl groups, and wherein hetro atoms either may or may not be present in the aryl group, an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetro atoms either may or may not be present in the arylalkyl group, or an alkylaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the arkylaryl group, (vi) or a group of the formula -CR50R60-; wherein R50 and R60 each, independently of the other, is a hydrogen atom, an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, an aryl group, including substituted and unsubstituted aryl groups, and wherein hetero atoms either may or may not be present in the aryl groups, an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetero atoms either may or may not be present in the arylalkyl group, or an alkylaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the alkylaryl group;
wherein (Y)n and (Z)n are each independently optionally present and wherein (Y)m and (Z)n are each independently selected from i) a hydrogen atom, (ii) a halogen atom, (iii) a nitro group, (iv) an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, (v) an aryl group, including substituted and unsubstituted aryl groups, and wherein hetero atoms either may or may not be present in the aryl group, (vi) an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetero atoms either may or may not be present in the arylalkyl group, (vii) an alkylaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the alkylaryl group, (viii) a group of the formula
wherein R70 is an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, an aryl group, including substituted and unsubstituted aryl groups, and wherein hetero atoms either may or may not be present in the aryl group, an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetero atoms either may or may not be present in the arylalkyl group, and alkylaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the alkylaryl group, an alkoxy group, including substituted and unsubstituted alkoxy groups, and wherein hetero atoms either may or may not be present in the alkoxy group, an aryloxy group, including substituted and unsubstituted aryloxy groups, and wherein hetero atoms either may or may not be present in the aryloxy group, an arylalkyloxy group, including substituted and unsubstituted arylalkyloxy groups, and wherein hetero atoms either may or may not be present in the arylalkyloxy group, an alkylaryloxy group, including substituted and unsubstituted alkylaryloxy groups, and wherein hetero atoms either may or may not be present in the arlkylaryloxy group, a polyalkyleneoxy group, a polyaryleneoxy group, a polyarylalkyleneoxy group, a polyalkylaryleneoxy group, a heterocyclic group, a silyl group, a siloxane group, a polysilylene group, or a polysiloxane group, (ix) a sulfonyl group of the formula -SO2R80 wherein R80 is a hydrogen atom, an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, an aryl group, including substituted and unsubstituted aryl groups, and wherein hetero atoms either may or may not be present in the aryl group, an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetero atoms either may or may not be present in the arylalkyl group, an alkyaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the alkoxy group, an aryloxy group, including substituted and unsubstituted aryloxy groups, and wherein hetero atoms either may or may not be present in the aryloxy group, an aryloxy group, including substituted and unsubstituted aryloxy groups, and wherein hetero atoms either may or may not be present in the aryloxy group, an arylalkyloxy group, including substituted and unsubstituted arylalkyloxy groups, and wherein hetero atoms either may or may not be present in the arylalkyloxy group, an alkylaryloxy group, including substituted and unsubstituted alkylaryloxy groups, and wherein hetero atoms either may or may not be present in the alkylaryloxy group, a polyalkyleneoxy group, a polyaryleneoxy group, a polyarylalkyleneoxy group, a polyalkylaryleneoxy group, a heterocyclic group, a silyl group, a siloxane group, a polysilylene group, or a polysiloxane group, or (x) a phosphoryl group of the formula -PO3R90 wherein R90 is a hydrogen atom, an alkyl group, including substituted and unsubstituted alkyl groups, and wherein hetero atoms either may or may not be present in the alkyl group, an aryl group, including substituted and unsubstituted aryl groups, and wherein hetero atoms either may or may not be present in the aryl group, an arylalkyl group, including substituted and unsubstituted arylalkyl groups, and wherein hetero atoms either may or may not be present in the arylalkyl group, an alkylaryl group, including substituted and unsubstituted alkylaryl groups, and wherein hetero atoms either may or may not be present in the alkylaryl group, an alkoxy group, including substituted and unsubstituted alkoxy groups, and wherein hetero atoms either may or may not be present in the alkoxy group, an aryloxy group, including substituted and unsubstituted aryloxy groups, and wherein hetero atoms either may or may not be present in the aryloxy group, an arylalkyloxy group, including substituted and unsubstituted arylalkyloxy groups, and wherein hetero atoms either may or may not be present in the arylalkyloxy group, an alkylaryloxy group, including substituted and unsubstituted alkylaryloxy groups, and wherein hetero atoms either may or may not be present in the alkylaryloxy group, a polyalkyleneoxy group, a polyaryleneoxy group, a polyarylalkyleneoxy group, a polyalkylaryleneoxy group, a heterocyclic group, a silyl group, a siloxane group, a polysilylene group, or a polysiloxane group; and
where in (Y)m, m is an integer from about 0 to about 4, and in (Z)n, n is an integer from about 0 to about 4.
2. A compound according to claim 1, wherein R is a linear alkylene group, R\u2032 is a linear alkylene group, or both R and R\u2032 are linear alkylene groups.
3. A compound according to claim 1, wherein R is a branched alkylene group, R\u2032 is a branched alkylene group, or both R and R\u2032 are branched alkylene groups.
4. A compound according to claim 1, wherein R is a saturated alkylene group, R\u2032 is a saturated alkylene group, or both R and R\u2032 are saturated alkylene groups.
5. A compound according to claim 1, wherein R is an unsaturated alkylene group, R\u2032 is an unsaturated alkylene group, or both R and R\u2032 are unsaturated alkylene groups.
6. A compound according to claim 1, wherein R is an unsubstituted alkylene group, R\u2032 is an unsubstituted alkylene group, or both R and R\u2032 are unsubstituted alkylene groups.
7. A compound according to claim 1, wherein R is a substituted alkylene group, R\u2032 is a substituted alkylene group, or both R and R\u2032 are substituted alkylene groups.
8. A compound according to claim 1, wherein R is an alkylene group wherein hetero atoms selected from oxygen, nitrogen, sulfur, silicon, phosphorus, boron, or mixtures thereof, are present in the alkylene group, R\u2032 is an alkylene group wherein hetero atoms selected from oxygen, nitrogen, sulfur, silicon, phosphorus, boron, or mixtures thereof, are present in the alkylene group, or both R and R\u2032 is an alkylene group wherein hetero atoms selected from oxygen, nitrogen, sulfur, silicon, phosphorus, boron, or mixtures thereof are present in the alkylene group.
9. A compound according to claim 1, R is a alkylene group wherein no hetero atoms are present in the alkylene group, R\u2032 is an alkylene group wherein no hetero atoms are present in the alkylene group, or both R and R\u2032 is an alkylene group wherein no hetero atoms are present in the alkylene group.
10. A compound according to claim 1, wherein R is an alkylene group with at least about 10 carbon atoms, R\u2032 is an alkylene group with at least about 10 carbon atoms, or both R and R\u2032 is an alkylene group with at least about 10 carbon atoms.
11. A compound according to claim 1, wherein R is an alkylene group with about 36 carbon atoms, R\u2032 is an alkylene group with about 36 carbon atoms, or both R and R\u2032 is an alkylene group with about 36 carbon atoms.
12. A compound according to claim 1, wherein R is
13. A compound according to claim 1, wherein R is
14. A compound according to claim 1, wherein R is
15. A compound according to claim 1, wherein R is a branched alkylene group having 36 carbon atoms which may include unsaturations and cyclic groups, R\u2032 is a branched alkylene group having 36 carbon atoms which may include unsaturations and cyclic groups, or both R and R\u2032 is a branched alkylene group having 36 carbon atoms which may include unsaturations and cyclic groups.
16. A compound according to claim 1, wherein X is oxygen.
17. A compound according to claim 1, of the formula
18. A compound according to claim 1, of the formula
19. A compound according to claim 1, of the formula
20. A compound according to claim 1, of the formula