1. A method for hard mask layer removal, the method comprising:
dispensing a chemical on a hard mask layer, wherein the chemical comprises an acidic chemical; and
draining the chemical from a chamber,
wherein the chemical drained from the chamber is not recycled for hard mask removal.
2. The method of claim 1, wherein the chemical has a pH less than 3.
3. The method of claim 1, further comprising blending an oxidant with the acidic chemical.
4. The method of claim 1, wherein the hard mask layer is one of a metal layer, a metal oxide layer, or a metal nitride layer.
5. The method of claim 1, wherein the acidic chemical is solution-based.
6. The method of claim 1, wherein the acidic chemical is solvent-based.
7. The method of claim 1, wherein the hard mask layer is a titanium nitride layer.
8. A method for fabricating a semiconductor device, the method comprising:
providing a wafer comprising a hard mask layer;
dispensing an acidic chemical on the hard mask layer for removing the hard mask layer; and
draining the acidic chemical from a chamber,
wherein the chemical drained from the chamber is not recycled for hard mask removal.
9. The method of claim 8, wherein the hard mask layer is one of a metal layer, a metal oxide layer, or a metal nitride layer.
10. The method of claim 8, wherein the acidic chemical has a pH less than 3.
11. The method of claim 8, wherein the acidic chemical is drained from the chamber after hard mask layer removal.
12. The method of claim 8, further comprising providing an oxidant dispensing on the wafer.
13. The method of claim 12, wherein a mixture of the acidic chemical and the oxidant is drained from a chamber after hard mask layer removal.
14. The method of claim 12, wherein the acidic chemical and the oxidant are dispensed on the wafer separately.
15. The method of claim 12, wherein the acidic chemical is mixed with the oxidant, and the mixture thereof is dispensed on the wafer.
16. The method of claim 8, wherein the removing the hard mask layer by the acid chemical is spontaneous.
17. The method of claim 8, wherein the wafer comprises a dielectric layer, and the hard mask layer is formed on the dielectric layer.
18. The method of claim 8, wherein the hard mask layer is one of a titanium nitride layer, a tantalum nitride layer, or a titanium layer.
19. The method of claim 8, wherein the acidic chemical is an organic acid.
20. The method of claim 8, wherein the acidic chemical is an inorganic acid.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A clip that hooks, and thus fixes, a cover of a seat onto a frame structure, comprising:
a cover connecting portion that is integrally connected to the cover;
a hook-shaped hook portion that hooks onto, and thus fixes to, the frame structure; and
a planar covering portion that is formed in a position facing a back side portion of the hook portion,
wherein an opening that enables the back side portion of the hook portion to be visible is formed in the covering portion.
2. The clip according to claim 1, wherein the hook portion has a long shape that hooks onto, and thus fixes to, a linear hanging wire that forms the frame structure, in a state broadly engaged in a direction in which the hanging wire extends; and a through-window that is open through the hook portion and the covering portion, and in which a shape is cut out, is formed, and the opening is formed communicated with the through-window.
3. The clip according to claim 2, wherein the through-window is formed, as a cutout portion that is formed near an obstacle that impedes the hook portion from being hooked onto the hanging wire, and that avoids interference with the obstacle, in the hanging wire.
4. The clip according to claim 1, wherein the opening is formed larger than the hook shape of the hook portion.