1. An air shutter to be installed in front of a doorway where temperature difference exists between the inside and outside thereof in order to interrupt the flowage of air through the doorway to interrupt the flowage of air through the doorway, wherein a pair of gateposts is installed of which each gatepost is provided at each side of the doorway to oppose to each other, a duct for air passage being formed in each gatepost, each gatepost being provided with air spouting out openings and air sucking openings along the direction of height such that each of the air spouting out openings of one side gatepost faces, or is opposite to, each of the air sucking openings of the other side gatepost respectively, a plurality of fans being provided behind each of said air spouting out openings; one of the gatepost is provided with the air spouting openings and fans located in the upper part and in the lower part thereof; the other of the gatepost is provided with the air spouting openings and fans located in the middle part in the direction of height thereof; and air is spouted out from the air spouting openings toward the corresponding opposite air sucking openings.
2. The air shutter according to claim 1, wherein the fans located in the middle part are divided into two groups, and each group of fans sucks air through each passage divided into two by a partition member for dividing the duct inside the other side gatepost.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A semiconductor device comprising:
a plurality of heat dissipating paths, each for each of a pre-set number of terminals of an active element, said heat dissipating paths being adapted for transmitting heat from the terminals of said active element to a heat sink member, wherein
said pre-set number of terminals being constructed so as not being electrically connected to one another by said heat radiating paths and said heat sink members.
2. The semiconductor device as defined in claim 1 wherein, in at least one of the heat dissipating paths, there is inserted in a path reaching said heat sink member a member exhibiting good thermal conductivity and electrically insulating properties,termed as an insulating member.
3. A semiconductor device wherein a first terminal of the active element is connected via an electrically conductive member to a heat sink member, and wherein a second terminal of the active element transmits heat to said heat sink member via at least an insulating member interposed in-between.
4. The semiconductor device as defined in claim 1 wherein said heat sink member is a heat sink member of a package mounting the active element.
5. The semiconductor device as defined in claim 2 wherein said heat sink member is a heat sink member of a package mounting the active element.
6. The semiconductor device as defined in claim 3 wherein said heat sink member is a heat sink member of a package mounting the active element.
7. A semiconductor device wherein an electrode of an active element formed on a substrate, termed as a first electrode, is connected to an electrically conductive member, and at least one of the other electrodes of the active element, termed as a second electrode, is connected to said electrically conductive member via an insulating member, said electrically conductive member abutting to a heat sink member of a package.
8. The semiconductor device as defined in claim 7 wherein said active element is comprised of a field, effect transistor FET, and wherein said first and second electrodes are a source electrode and a drain electrode, respectively.
9. A semiconductor device wherein at least one terminal of an active element is connected via an insulating member to a heat sink member of a package used for mounting the active element.
10. The semi conductor device as defined in claim 9 wherein said insulating member is arranged on at least one of (a) a terminal surface of said active element andor (b) a heat sink member side of the package used for mounting the active element.
11. The semiconductor device as defined in claim 2 wherein the insulating member comprises aluminum nitride.
12. A method for producing a semiconductor device in which an active element formed on a substrate is connected to a heat sink member of a package accommodating said active element, comprising the steps of:
(a) forming a gate electrode on said substrate;
(b) forming a fi rst insulating film having holes provided in the substrate at position of a drain electrode and a source electrode respectively;
(c) forming said drain electrode and said source electrode on said substrate;
(d) forming a second insulating film on the entire surface of said substrate and planarizing the surface until said drain electrode and the source electrode are exposed;
(e) forming an insulating member on said drain electrode;
(f) forming on said substrate a third insulating film having a hole provided at the position of the source electrode and planarizing the surface until the surface of said insulating member of said drain electrode is exposed; and
(g) forming an electrically conductive member on said third insulating film.
13. A method for producing a semiconductor device in which an active element formed on a substrate is connected to a heat sink member of a package accommodating said active element, comprising the steps of:
(a) forming a gate electrode on said substrate;
(b) forming a first insulating film having holes provided in the substrate at positions of a drain electrode and a source electrode, respectively;
(c) forming said drain electrode and the source electrode on said substrate;
(d) forming a second insulating film on the entire surface of the substrate and planarizing the surface until the drain electrode and the source electrode are exposed;
(e) forming an insulating member on said drain electrode;
(f) forming a metal protuberance on said package in register with the source electrode of said active element; and
(g) bonding said active element and the package so that said source electrode of said active element and the metal protuberance of the package face each other.
14. A method for producing a semiconductor device in which an active element formed on a substrate is connected to a heat sink member of a package accommodating said active element, comprising the steps of:
(a) forming a gate electrode on said substrate;
(b) forming a first insulating film having holes provided in the substrate at positions of a drain electrode and a source electrode respectively;
(c) forming said drain electrode and said source electrode on said substrate;
(d) providing on said package an insulating member at a position facing the drain electrode of said active element;
(e) providing a metal protuberance on said package in register with the source electrode of said active element;
(f) bonding said active element and the package so that said source electrode of said active element and the metal protuberance of said package face each other and so that the drain electrode and the insulating member of said package face each other.
15. The method for producing a semiconductor device as defined in claim 12 wherein said insulating member comprises aluminum nitride.
16. The method for producing a semiconductor device as defined in claim 13 wherein said insulating member comprises aluminum nitride.
17. The method for producing a semiconductor device as defined in claim 14 wherein said insulating member comprises aluminum nitride.
18. The method for producing a semiconductor device as defined in claim 12 wherein said active element is a high-output-power FET formed on a GaAs substrate and wherein said insulating member comprises aluminum nitride.
19. The method for producing a semiconductor device as defined in claim 13 wherein said active element is a high-output-power FET formed on a GaAs substrate and wherein said insulating member comprises aluminum nitride.
20. The method for producing a semiconductor device as defined in claim 14 wherein said active element is a high-output-power FET formed on a GaAs substrate and wherein said insulating member comprises aluminum nitride.