1. A method for preparing an enantiomerically pure (S)-1,1,1-trifluoro-2-propanol by an asymmetric hydrogenation of 1,1,1-trifluoroacetone comprising hydrogenating 1,1,1-trifluoroacetone in the presence of a ruthenium phosphine complex catalyst represented by formula
Ru(E)(E\u2032)(L)(A)
wherein E, E\u2032 are both chloro or E is hydrogen and E\u2032 is BH4;
L is a chiral diphosphine ligand; and
A is an optionally chiral diamine
wherein hydrogenation occurs
in the absence of a solvent and
a) in the presence of a weak base, with or without an additive, when E and E\u2032 are both chloro or
b) in the absence of a base and an additive when E and E\u2032 are hydrogen and BH4.
2. The method of claim 1, wherein the ruthenium phosphine complex catalyst is represented by formula
Ru(Cl)2(L)(A)
wherein
L is a chiral diphosphine ligand; and
A is an optionally chiral diamine
in the presence of a weak base, with or without an additive.
3. The method of claim 2, wherein the ruthenium phosphine complex catalyst is selected from the group consisting of catalysts of formulas 3, 3-1, 3-2, 3-3, 3-4, and all possible optical isomers (R,R), (S,S), (rac), (meso), (R), and (S) thereof:
wherein
Ar is phenyl or phenyl substituted by one or more C1-7-alkyl, C1-7-alkoxy, phenyl, di-C1-7-alkylamino, N-morpholino or tri-C1-7-alkylsilyl group(s);
Z is N or C\u2014R3;
each R1 is independently hydrogen, C1-7-alkyl, cycloalkyl or aryl; or taken together form a \u2014(CH2)4-bridge;
R2 is C1-7-alkyl, C1-7-alkoxy, hydroxy or \u2014OC(O)\u2014C1-7-alkyl;
R3 and R4 are each independently hydrogen, C1-7-alkyl, C1-7-alkoxy, halogen or di-C1-7-alkylamino; or
R2 and R3 or R3 and R4 which are attached to the same phenyl group, or both R2 attached to different phenyl groups, taken together, are \u2014X\u2014(CH2)n\u2014Y\u2014; or \u2014X\u2014(CF2)\u2014X\u2014 wherein X is O or C(O)O, Y is O or N(C1-7-alkyl) and n is an integer from 1 to 6; or
R2 and R3 together with the carbon atoms to which they are attached, form a naphthyl or tetrahydronaphthyl ring; and
x is an integer from 1 to 6.
4. The method of claim 3, wherein the ruthenium phosphine complex catalyst is selected from the group consisting of catalysts of formulas 3, 3-1, 3-4, and all possible optical isomers (R,R), (S,S), (rac), (meso), (R), and (S) thereof:
wherein
Ar is
R1 is phenyl; and
x is 2 or 3.
5. The method of claim 4, wherein the ruthenium phosphine complex catalyst is
Ar is
R1 is phenyl, and the optical isomers (R,R), (S,S), (rac) and (meso) thereof.
6. The method of claim 2, wherein the weak base is selected from the group consisting of ammonium, transition metal, alkali metal and alkali earth metal salts of HCOO\u2212, AcO\u2212, CF3COO\u2212, tBuCOO\u2212, HCO3\u2212 HSO4\u2212, SO42\u2212, HSO3\u2212, H2PO3\u2212, HPO32\u2212 and phenolates selected from the group consisting of 2,4-dinitrophenolate.
7. The method of claim 6, wherein the weak base is selected from the group consisting of ammonium, transition metal, alkali metal and alkali earth metal salts of HCOO\u2212 and HCO3\u2212.
8. The method of claim 2, wherein the weak base is present in an amount of 0.01-10 mol-% relative to 1,1,1-trifluoroacetone.
9. The method of claim 2, wherein the additives are water andor 1,1,1-trifluoro-2-propanol.
10. The method of claim 9, wherein the additive is present in an amount of 0.1-50 wt.-% relative to 1,1,1-trifluoroacetone.
11. The method of claim 2, wherein the substrate and catalyst are present in a substrate-to-catalyst molar ratio (SC) is 1,000-100,000.
12. The method of claim 11, wherein the substrate-to-catalyst molar ratio (SC) is 10,000-30,000.
13. The method of claim 2, wherein the process is carried out at a temperature between about 20 and 80\xb0 C.
14. The method of claim 13, wherein the process is carried out at a temperature between about 40 and 60\xb0 C.
15. The method of claim 2, wherein the process is carried out at a pressure between about 5\xd7105 and 100\xd7105 Pa of hydrogen.
16. The method of claim 15, wherein the process is carried out at a pressure between about 40\xd7105 and 80\xd7105 Pa of hydrogen.
17. The method of claim 2, which process comprises hydrogenating 1,1,1-trifluoroacetone in the presence of a ruthenium phosphine complex catalyst represented by formula
wherein
Ar is
R1 is phenyl in the presence of HCOONa in an amount of 0.04-0.5 mol-% relative to 1,1,1-trifluoroacetone and water in an amount of 1-3 wt-% relative to 1,1,1-trifluoroacetone, by a substrate-to-catalyst molar ratio (SC) of 10,000-30,000, at 40-60\xb0 C. and 40\xd7105-80\xd7105 Pa of hydrogen.
18. The method of claim 1 wherein the ruthenium phosphine complex catalyst is represented by formula
Ru(H)(BH4)(L)(A)
L is a chiral diphosphine ligand; and
A is an optionally chiral diamine
in the absence of a base and an additive.
19. The method of claim 18, wherein the ruthenium phosphine complex catalyst is selected from the group consisting of catalysts of formulas 4, 4-1, 4-2, 4-3, and all possible optical isomers (R,R), (S,S), (rac), (meso), (R), and (S) thereof:
wherein
Ar is phenyl or phenyl substituted by one or more C1-7-alkyl, C1-7-alkoxy, phenyl, di-C1-7-alkylamino, N-morpholino or tri-C1-7-alkylsilyl group(s);
Z is N or C\u2014R3;
each R1 is independently hydrogen, C1-7-alkyl, cycloalkyl or aryl; or taken together form a \u2014(CH2)4-bridge;
R2 is C1-7-alkyl, C1-7-alkoxy, hydroxy or \u2014OC(O)\u2014C1-7-alkyl;
R3 and R4 are each independently hydrogen, C1-7-alkyl, C1-7-alkoxy, halogen or di-C1-7-alkylamino; or
R2 and R3 or R3 and R4 which are attached to the same phenyl group, or both R2 attached to different phenyl groups, taken together, are \u2014X\u2014(CH2)n\u2014Y\u2014; or \u2014X\u2014(CF2)\u2014X\u2014 wherein X is O or C(O)O, Y is O or N(C1-7-alkyl) and n is an integer from 1 to 6; and
x is an integer from 1 to 6.
20. The method of claim 19, wherein the ruthenium phosphine complex catalyst is selected from the group consisting of catalysts of formulas 4, 4-1, and all possible optical isomers (R,R), (S,S), (rac), (meso), (R), and (S) thereof:
wherein
Ar is
R1 is phenyl; and
x is 2 or 3.
21. The method of claim 20, wherein the ruthenium phosphine complex catalyst is
Ar is
R1 is phenyl, including the optical isomers (R,R), (S,S), (rac) and (meso).
22. The method of claim 18, wherein the substrate and catalyst are present in a substrate-to-catalyst molar ratio (SC) is 1,000-50,000.
23. The method of claim 22, wherein the substrate-to-catalyst molar ratio (SC) is 2,000-20,000.
24. The method of claim 18, wherein the process is carried out at a temperature between about 20 and 80\xb0 C.
25. The method of claim 24, wherein the process is carried out at a temperature between about 40 and 60\xb0 C.
26. The method of claim 18, wherein the process is carried out at a pressure between about 5\xd7105 and 100\xd7105 Pa of hydrogen.
27. The method of claim 26, wherein the process is carried out at a pressure between about 40\xd7105 and 80\xd7105 Pa of hydrogen.
28. The method of claim 18, which process comprises hydrogenating 1,1,1-trifluoroacetone in the presence of a ruthenium phosphine complex catalyst represented by formula
wherein
Ar is
R1 is phenyl without a base or additive by a substrate-to-catalyst molar ratio (SC) of 2,000-20,000, at 40-60\xb0 C. and 40\xd7105-80\xd7105 Pa of hydrogen.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A signal processing module for wireless applications, comprising:
a liquid crystal polymer (LCP) layer having a first surface and a second surface opposite the first surface;
a first patterned metal layer on the first surface of the LCP layer;
a second patterned metal layer on the second surface of the LCP layer, wherein the first and second metal layers are patterned to form integrated components such that the first and second metal layers interact with one another to form a first resonator and a second resonator;
a first prepreg layer on the first metal layer opposite the LCP layer and a second prepreg layer on the second metal layer opposite the LCP layer; and
a first laminate layer on the first prepreg layer opposite the first metal layer, and a second laminate layer on the second prepreg layer opposite the second metal layer.
2. The module of claim 1, wherein the first resonator comprises a first inductor formed in the first patterned metal layer and a second inductor formed in the second patterned metal layer, wherein the first inductor is connected by a first microvia to the second inductor.
3. The module of claim 1, wherein the first resonator is magnetically coupled to the second resonator.
4. The module of claim 1, further comprising a third resonator formed in the first and second metal layers and electrically connecting the first resonator to the second resonator, wherein the third resonator provides a primary attenuation zero in a stopband.
5. The module of claim 1, wherein the first and second resonators comprise transmission line resonators.
6. The module of claim 1, wherein the first and second resonators comprise one or more of co-planar waveguide, stripline, and microstrip topologies.
7. The module of claim 1, further comprising a third metal layer on a first surface of the first laminate layer and patterned to form a first capacitor plate, and a fourth metal layer on a second surface of the first laminate layer opposite the first surface and patterned to form a second capacitor plate, wherein the first capacitor plate and second capacitor plate form a parallel plate capacitor.
8. The module of claim 1, farther comprising a first shielding layer on the first laminate layer opposite the first prepreg layer and a second shielding layer on the second laminate layer opposite the second prepreg layer.
9. The module of claim 1, wherein the integrated components include at least one of capacitors and inductors.
10. A diplexer for a multi-band wireless application, comprising:
a liquid crystal polymer (LCP) layer having a first surface and a second surface opposite the first surface;
a first patterned metal layer on the first surface of the LCP layer;
a second patterned metal layer on the second surface of the LCP layer, wherein the first and second metal layers are patterned to form integrated components such that the first and second metal layers interact with one another to form a first filter and a second filter connected by a common port;
a first prepreg layer on the first metal layer opposite the LCP layer, and a second prepreg layer on the second metal layer opposite the LCP layer; and
a first laminate layer on the first prepreg layer opposite the first metal layer, and a second laminate layer on the second prepreg layer opposite the second metal layer.
11. The diplexer of claim 10, wherein the first filter comprises a first inductor formed in the first patterned metal layer and a second inductor formed in the second patterned metal layer, wherein the first inductor is connected by a first microvia to the second inductor.
12. The diplexer of claim 10, wherein the first and second metal layers comprise one or more of co-planar waveguide, stripline, and microstrip topologies.
13. The diplexer of claim 10, further comprising a third metal layer on a first surface of the first laminate layer and patterned to form a first capacitor plate, and a fourth metal layer on a second surface of the first laminate layer opposite the first surface and patterned to form a second capacitor plate, wherein the first capacitor plate and second capacitor plate form a parallel plate capacitor.
14. The diplexer of claim 10, further comprising a first shielding layer on the first laminate layer opposite the first prepreg layer and a second shielding layer on the second laminate layer opposite the second prepreg layer.
15. The diplexer of claim 10, wherein the integrated components include at least one of capacitors and inductors.
16. A balun for a wireless application, comprising:
a high K organic layer having a a first surface and a second surface opposite the first surface;
a first patterned metal layer on the first surface of the LCP layer;
a second metal patterned metal layer on the second surface of the LCP layer, wherein the first and second metal layers are patterned to form integrated components such that the first and second metal layers interact with one another to form a first passive device and a second passive device;
a first prepreg layer on the first metal layer opposite the LCP layer, and a second prepreg layer on the second metal layer opposite the LCP layer; and
a first outer organic layer on the first prepreg layer opposite the first metal layer, and a second outer organic layer on the second prepreg layer opposite the second metal layer.
17. The balun of claim 16, wherein the first outer organic layer comprises one of a laminate layer, LCP layer or high K organic layer.
18. The balun of claim 16, wherein the first metal layer is patterned to form a first capacitor plate and the second metal layer is patterned to form a second capacitor plate, and further comprising a third metal layer on the first outer organic layer patterned to form a third capacitor plate, and wherein the first, second and third capacitor plates form a capacitor.
19. The balun of claim 16, wherein the integrated components include at least one of capacitors and inductors.
20. The balun of claim 16, further comprising a first shielding layer on the first outer organic layer opposite the first prepreg layer and a second shielding layer on the second outer organic layer opposite the second prepreg layer.
21. A signal processing module for multi-band wireless applications, comprising:
a first liquid crystal polymer (LCP) layer having a first surface and a second surface opposite the first surface;
a first patterned metal layer on the first surface of the first LCP layer;
a second patterned metal layer on the second surface of the first LCP layer, wherein the first and second metal layers are patterned to form integrated components such that the first and second metal layers interact with one another to form at least a first filter and a second filter connected by a common port;
a second LCP layer having a first surface and a second surface opposite the first surface;
a third patterned metal layer on the first surface of the second LCP layer;
a fourth patterned metal layer on the second surface of the second LCP layer, wherein the third and fourth metal layers are patterned to form integrated components such that the third and fourth metal layers interact with one another to form at least a first filter and a second filter connected by a common port;
a first prepreg layer disposed between the first and second LCP layers;
a second prepreg layer on the second metal layer opposite the first LCP layer, and a third prepreg layer on the third metal layer opposite the second LCP layer; and
a first outer organic layer on the second prepreg layer opposite the second metal layer, and a second outer organic layer on the third prepreg layer opposite the third metal layer.
22. The module of claim 21, further comprising a first shielding layer on the first outer organic layer opposite the second prepreg layer and a second shielding layer on the second outer organic layer opposite the third prepreg layer.
23. The module of claim 21, wherein the first outer organic layer comprises one of a laminate layer, LCP layer or high K organic layer.
24. The module of claim 21, further comprising a first RCF layer on first outer organic layer opposite the second prepreg layer; and
a second RCF layer on the second outer organic layer opposite the third prepreg layer.