1. A semiconductor device comprising:
a substrate;
a gate electrode;
an oxide semiconductor layer;
a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
a first insulating layer between the gate electrode and the oxide semiconductor layer; and
a second insulating layer comprising a silicon peroxide radical, wherein the oxide semiconductor layer is provided between the first insulating layer and the second insulating layer
wherein the second insulating layer is in contact with the oxide semiconductor layer, and
wherein the oxide semiconductor layer is dehydrated or dehydrogenated.
2. The semiconductor device according to claim 1,
wherein the gate electrode overlaps with the oxide semiconductor layer with the first insulating layer interposed therebetween, and
wherein the oxide semiconductor layer is provided between the gate electrode and the substrate.
3. The semiconductor device according to claim 1, wherein the source electrode and the drain electrode are provided between the first insulating layer and the oxide semiconductor layer.
4. The semiconductor device according to claim 1, wherein the source electrode and the drain electrode are provided between the second insulating layer and the oxide semiconductor layer.
5. The semiconductor device according to claim 1,
wherein the oxide semiconductor layer overlaps with the gate electrode with the first insulating layer interposed therebetween, and
wherein the gate electrode is provided between the substrate and the oxide semiconductor layer.
6. The semiconductor device according to claim 1, wherein the first insulating layer comprises a silicon peroxide radical.
7. The semiconductor device according to claim 1,
wherein the oxide semiconductor layer comprises a channel region, a source region and a drain region,
wherein the source region and the drain region have lower resistance than the channel region.
8. The semiconductor device according to claim 1, wherein the silicon peroxide radical comprises the structure represented by Si\u2014O\u2014O\u2022.
9. The semiconductor device according to claim 1, wherein the first insulating layer comprising the silicon peroxide radical has signals at g value=2.0016 and 2.0078 in a spectrum obtained by an electron spin resonance method.
10. The semiconductor device according to claim 1, wherein a hydrogen concentration of the oxide semiconductor layer is lower than 1\xd71018 cm\u22123.
11. The semiconductor device according to claim 1, wherein a carrier concentration of the oxide semiconductor layer is lower than 1\xd71014 cm\u22123.
12. A semiconductor device comprising an insulating layer in contact with an oxide semiconductor layer,
wherein the insulating layer comprises a silicon peroxide radical, and
wherein the oxide semiconductor layer is dehydrated or dehydrogenated.
13. The semiconductor device according to claim 12, wherein the silicon peroxide radical comprises the structure represented by Si\u2014O\u2014O\u2022.
14. The semiconductor device according to claim 12, wherein the insulating layer has signals at g value=2.0078 and 2.0016 in a spectrum obtained by an electron spin resonance method.
15. The semiconductor device according to claim 12, wherein a hydrogen concentration of the oxide semiconductor layer is lower than 1\xd71018 cm\u22123.
16. The semiconductor device according to claim 12, wherein a carrier concentration of the oxide semiconductor layer is lower than 1\xd71014 cm\u22123.
17. A method for manufacturing a semiconductor device, comprising the step of forming a first insulating layer on and in contact with an oxide semiconductor layer,
wherein the first insulating layer comprises a silicon peroxide radical, and
wherein the oxide semiconductor layer is dehydrated or dehydrogenated.
18. The method for manufacturing a semiconductor device according to claim 17, wherein the silicon peroxide radical comprises the structure represented by Si\u2014O\u2014O\u2022.
19. The method for manufacturing a semiconductor device according to claim 17, further comprising the step of forming a source electrode and a drain electrode on and in contact with the oxide semiconductor layer, wherein the first insulating layer is formed over the source electrode and the drain electrode.
20. The method for manufacturing a semiconductor device according to claim 17, further comprising the step of forming a source electrode and a drain electrode over a substrate, wherein the oxide semiconductor layer is formed on and in contact with the source electrode and the drain electrode.
21. The method for manufacturing a semiconductor device according to claim 17, further comprising the step of forming a second insulating layer over a substrate,
wherein the oxide semiconductor layer is formed over the second insulating layer, and
wherein the second insulating layer comprises a silicon peroxide radical.
22. The method for manufacturing a semiconductor device according to claim 17, wherein a hydrogen concentration of the oxide semiconductor layer is lower than 1\xd71018 cm\u22123.
23. The method for manufacturing a semiconductor device according to claim 17, wherein a carrier concentration of the oxide semiconductor layer is lower than 1\xd71014 cm\u22123.
24. A method for manufacturing a semiconductor device comprising the step of forming an oxide semiconductor layer on and in contact with an insulating layer,
wherein the insulating layer comprises a silicon peroxide radical, and
wherein the oxide semiconductor layer is dehydrated or dehydrogenated.
25. The method for manufacturing a semiconductor device according to claim 24, wherein the silicon peroxide radical comprises the structure represented by Si\u2014O\u2014O\u2022.
26. The method for manufacturing a semiconductor device according to claim 24, further comprising the step of forming a source electrode and a drain electrode over the insulating layer, wherein the oxide semiconductor layer is formed on and in contact with the source electrode and the drain electrode.
27. The method for manufacturing a semiconductor device according to claim 24, further comprising the step of forming a source electrode and a drain electrode over a substrate, wherein the oxide semiconductor layer is formed on and in contact with the source electrode and the drain electrode.
28. The method for manufacturing a semiconductor device according to claim 24, wherein a hydrogen concentration of the oxide semiconductor layer is lower than 1\xd71018 cm\u22123.
29. The method for manufacturing a semiconductor device according to claim 24, wherein a carrier concentration of the oxide semiconductor layer is lower than 1\xd71014 cm\u22123.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for calculating pressures in a fluid stream through a tube section from an upstream end to a downstream end of the tube section, the tube section comprising at least one flow divider dividing the fluid stream from an inlet to at least two arms, each arm with an outlet, the method comprising
scanning the tube section with a scanner and providing a plurality of cross-sectional 2D scanning images along the fluid stream; said cross-sectional 2D scanning images being a 2D slicing of the section along the flow direction in the tube but not necessarily normal to a fluid direction,
by a computer program on the basis of the 2D images automatically calculating a 3D image of the tube section by using interpolation between the 2D images,
by a computer program performing a 2D sectional image cut through the 3D image, the image cut following the fluid stream in the tube section with the arms,
calculating in the sectional image cut a fluid pressure distribution along the tube section on the basis of given boundary conditions, the boundary conditions including fluid velocity or fluid pressure at the upstream end.
2. The method according to claim 1, wherein the method implies
calculating stresses and deformations of the tube section in cross-sectional 2D models,
providing cross-sectional scans of the tube section depicting the actual deformation in different cross sectional planes for
comparing the calculated cross sectional deformation with the actual deformation for validating the chosen tissue parameters and examining the accuracy of the simulation.
3. The method according to claim 1, wherein the method implies measuring the fluid pressure at the upstream end and measure the fluid velocity at the downstream end and include these measurements in the boundary conditions.
4. The method according to claim 3, wherein the method implies measuring the fluid velocity at the upstream end, and calculating on the basis on the pressure distribution in the tube section the expected fluid velocity at the upstream end, and comparing the measured fluid velocity and the expected fluid velocity at the upstream end as part of an evaluation procedure for the validity of the pressure calculation.
5. The method according to claim 1, wherein the method implies measuring the fluid velocity at the upstream end and wherein the boundary conditions include the measured fluid velocity at the upstream end and an estimated pressure at the downstream end.
6. The method according to claim 5, wherein the method implies measuring the fluid velocity at the downstream end, and calculating on the basis on the pressure distribution in the tube section the expected fluid velocity at the downstream end, and comparing the measured fluid velocity and the expected fluid velocity at the downstream end as part in an evaluation procedure for the validity of the pressure calculation.
7. The method according to claim 1, wherein the tube section comprises a material deposit lump on the inner wall of the tube section obstructing part of a flow path of the fluid in the tube section, wherein the method comprises calculating the forces on the surface of the lump on the basis of the pressure in the tube section at the location of the lump.
8. The method according to claim 7, wherein the tube section has an elastic wall and wherein the method implies performing computer calculations for the deformation of wall due to pressure on the lump.
9. The method according to claim 8, wherein the lump has cap, and wherein the method implies calculating the stress on the cap on the basis of the pressure and the flow of the fluid.
10. The method according to claim 1, wherein the method comprises finding centre points for the fluid stream in the 3D image and calculating a 2D sectional cut through these centre points.
11. The method according to claim 10, wherein the method implies projecting the image cut onto a straight plane before the calculation of the fluid pressure distribution.
12. The method according to claim 10, wherein the finding of the centre points involves manual selecting the centre points in the tube section, the method involving finding the centre points in all arms of the tube section, if the tube section has more than one arm, and calculating a 2D sectional cut through all centre points.
13. The method according to claim 1, wherein the scanner is an MRI scanner, and the method involve measuring the velocity of the fluid in the upstream end or in the downstream end or in both by phase contrast MRI scans.
14. The method according to claim 1, wherein the fluid is blood, the tube section is part of a blood vessel and the lump comprises atherosclerotic plaques with a thin protective fibrous cap.
15. The method according to claim 1, wherein the method calculates stresses and deformations in cross-sectional 2D models by using the pressure distribution as a boundary condition, the cross-sectional 2D models corresponding to the 2D scanning images.
16. The method according to claim 15, wherein the method comprises using said fluid pressure distribution for calculating an average pressure along fluidsolid domain interfaces for calculating 2D cross-sectional deformation and stresses of the tube and of material deposits in the tube, if present; said fluidsolid domain interfaces defining an interface between an inner wall of the tube and a fluid in the tube or an interface between a lump of material arranged on the inner wall of the tube and the fluid in the tube.
17. The method according to claim 16, the method further comprising comparing the calculated cross sectional deformation to dynamic cross-sectional MRI scans depicting the actual deformation in different cross sectional planes for validating the chosen tissue parameters and examining the accuracy of the simulation.
18. A system calculating pressures in a fluid streaming through a tube section from an upstream end to a downstream end of the tube section, the tube section comprising at least one flow divider dividing the fluid stream from an inlet to at least two arms, each arm with an outlet, the system comprising
a scanner for scanning the tube section and for providing a plurality of cross-sectional 2D scanning images along the tube section,
a computer programmed for
on the basis of the 2D images automatically calculating a 3D image of the tube section by using interpolating between the 2D images, and
for performing a 2D sectional image cut through the 3D image, the image cut following the fluid stream in the tube section with the arms, and for
calculating in the sectional image cut a fluid pressure distribution along multiple locations along the tube section on the basis of given boundary conditions, the boundary conditions including fluid velocity or fluid pressure at the upstream end.