1. A quartz glass comprising a region where a concentration of E center as measured by means of an electron spin resonance analysis is 31019 cm3 or more.
2. The quartz glass according to claim 1, wherein said concentration of E center is in the range of from 31019 cm3 to 11022 cm3.
3. The quartz glass according to claim 1, wherein said concentration of E center is in the range of from 71019 cm3 to 11022 cm3.
4. A method of manufacturing a quartz glass which comprises the steps of;
forming an initial quartz glass by melting and quenching a raw material for quartz glass; and
implanting therein an ion, which is capable of entering into an SiO2 network of the initial quartz glass and substantially incapable of externally diffusing, to increase a concentration of E center in at least part of the initial quartz glass.
5. The method of manufacturing a quartz glass according to claim 4, wherein said ion is selected from the group consisting of silicon, nitrogen, carbon and aluminum.
6. The method of manufacturing a quartz glass according to claim 4, wherein a dosage of said ion is 51014 cm2 or more.
7. The method of manufacturing a quartz glass according to claim 6, wherein a dosage of said ion is in the range of from 11015 cm2 or more.
8. The method of manufacturing a quartz glass according to claim 6, wherein a dosage of said ion is in the range of from 11015 cm2 to 11016 cm2.
9. The method of manufacturing a quartz glass according to claim 4, wherein said concentration of E center in said ion-implantation region as measured by means of an electron spin resonance analysis is 31019 cm3 or more.
10. A method of manufacturing a quartz glass which comprises the steps of;
mixing 0.01 to 0.1% by weight of silicon into a raw material for quartz glass;
melting the raw material for quartz glass mixed with said silicon to obtain a melt; and
quenching said melt.
11. The method of manufacturing a quartz glass according to claim 10, wherein said concentration of E center as measured by means of an electron spin resonance analysis is 31019 cm3 or more.
12. A method of manufacturing a quartz glass which comprises the steps of;
melting a raw material for quartz glass to obtain a melt;
quenching said melt thereby to form an initial quartz glass; and
irradiating ultraviolet-rays to said initial quartz glass.
13. The method of manufacturing a quartz glass according to claim 12, wherein said concentration of E center as measured by means of an electron spin resonance analysis is 31019 cm3 or more.
14. A method of manufacturing a quartz glass which comprises the steps of;
melting a raw material for quartz glass to obtain a melt;
quenching said melt thereby to form an initial quartz glass; and
giving an abrasion damage to a surface of said initial quartz glass by applying a sand blast to said surface of initial quartz glass.
15. The method of manufacturing a quartz glass according to claim 14, wherein said concentration of E center as measured by means of an electron spin resonance analysis is 31019 cm3 or more.
16. A heat treating apparatus comprising;
a furnace tube formed of quartz glass comprising a region where a concentration of E center as measured by means of an electron spin resonance analysis is 31019 cm3 or more; and
heating means mounted around said furnace tube.
17. The heat treating apparatus according to claim 16, which further comprises ultraviolet-irradiating means for irradiating ultraviolet ray onto said furnace tube.
18. A method of heat-treating a semiconductor wafer, which comprises the steps of;
arranging the semiconductor wafer in a furnace tube formed of quartz glass comprising a region where a concentration of E center as measured by means of an electron spin resonance analysis is 31019 cm3 or more; and
heat-treating the semiconductor wafer while flowing a non-oxidizing gas in such a manner that the non-oxidizing gas contacts directly with an outer wall of said furnace tube.
19. The method of heat-treating a semiconductor wafer according to claim 18, wherein a concentration of oxidizing gas that is included in said non-oxidizing gas is 100 ppm or less.
20. A method of heat-treating a semiconductor wafer, which comprises the steps of;
arranging the semiconductor wafer in a furnace tube formed of quartz glass comprising a region where a concentration of E center as measured by means of an electron spin resonance analysis is 31019 cm3 or more; and
heat-treating the semiconductor wafer while irradiating ultraviolet rays onto said furnace tube.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for providing a service to a subscriber in a network, comprising the steps of:
a) providing a network information of the subscriber to a service provider;
b) generating a service message on the basis of the provided network information; and
c) transmitting the service message to the subscriber.
2. A method according to claim 1, wherein said network information relates to at least one of an identity, a location, an address, and an operating state of a mobile station of the subscriber in a cellular network.
3. A method according to claim 1 or 2, wherein said service message is a local advertisement.
4. A method according to claim 1 or 2, wherein said service message is a header of an unread mail stored in a mail server.
5. A method according to claim 1 or 2, wherein said service message is a stock price change.
6. A method according to any one of claims 2 to 5, wherein said service message is transmitted when said mobile station is reachable according to the network information.
7. A method according to any one of claims 2 to 6, wherein the network information of the subscriber is transmitted by a network operator to the provider of the external message in dependence on a predetermined subscriber condition.
8. A method according to claim 7, wherein said predetermined subscriber condition is a request from the subscriber.
9. A method according to claim 8, wherein said request is set by the mobile station.
10. A method according to claim 8, wherein said request is set by a network operator.
11. A method according to claim 8 or 9, wherein a network operator receives the request including a service provider address, retrieves location coordinates of the subscriber on the basis of a cell identification, and transmits the location coordinates to the service provider using the received address.
12. A method according to any one of claims 2 to 11, wherein the network information of the subscriber is transmitted in a header of a packet transmitted by the mobile station.
13. A method according to claim 12, wherein the network information is inserted by a network element in a second packet which encapsulates the packet transmitted by the mobile station.
14. A method according to any one of claims 1 to 6, wherein the network information of the subscriber is stored in a storing means in dependence on a predetermined subscriber condition, and wherein said storage means is accessible to the service provider.
15. A method according to claim 14, wherein the service provider reads the storing means by using a predetermined key relating to the subscriber.
16. A method according to claim 14 or 15, wherein said predetermined subscriber condition is a request from the subscriber.
17. A method according to claim 7, 14 or 15, wherein said predetermined subscriber condition is a subscription parameter of the subscriber.
18. A method according to claim 7, 14 or 15, wherein said predetermined subscriber condition is an activation of a predetermined supplementary service.
19. A method according to claim 7, 14 or 15, wherein said predetermined subscriber condition is the fact that the subscriber is located in his home area.
20. A system for providing a service to a subscriber in a network, comprising:
a) providing means (7) for providing a network information of the subscriber to a service provider (5); and
b) control means (6) for controlling the provision of the network information to the service provider (5) in dependence on a predetermined subscriber condition.
21. A system according to claim 20, wherein the network information relates to at least one of an identity, a location and an operating state of a mobile station (1) of the subscriber in a cellular network.
22. A system according to claim 21, further comprising a data base for converting a cell identification of the mobile station (1) into allocation thereof.
23. A system according to any one of claims 20 to 22, wherein the providing means (7) comprises a transmitting means fortransmitting the network information of the subscriber to the service provider (5), wherein the control means (6) controls the transmitting operation in dependence on the predetermined subscriber condition.
24. A system according to any one of claims 20 to 22, wherein the providing means (7) comprises a storing means in which the network information of the subscriber is stored and which is accessible to the service provider (5), wherein the control means (6) controls the storing operation in dependence on the predetermined subscriber condition.
25. A system according to any one of claims 20 to 24, wherein said predetermined subscriber condition is a request from the subscriber.
26. A system according to any one of claims 20 to 24, wherein said predetermined subscriber condition is a subscription parameter of the subscriber.
27. A system according to any one of claims 20 to 24, wherein said predetermined subscriber condition is an activation of a predetermined supplementary service.
28. A system according to any one of claims 20 to 24, wherein said predetermined subscriber condition is the fact that the subscriber is located in his home area.