What is claimed is:
1. An electron emitting device, comprising:
a substrate;
a pair of electrodes formed on the substrate and being apart from each other;
a pair of electrically conductive films formed on the electrodes, respectively, and being apart from each other, a distance between the electrically conductive films being shorter than a distance between the electrodes; and
an electron emitting film formed between the electrically conductive films, the electron emitting film containing boron and at least one of carbon and nitrogen.
2. The device according to claim 1, wherein the electron emitting film contains boron and carbon.
3. The device according to claim 1, wherein the electron emitting film contains boron and nitrogen.
4. The device according to claim 3, wherein the electron emitting film further contains at least one element selected from the group consisting of magnesium, aluminum, silicon, phosphorus and sulfur.
5. The device according to claim 1, wherein the electron emitting film contains boron, carbon and nitrogen.
6. The device according to claim 5, wherein, in at least a portion of the electron emitting film, boron, carbon and nitrogen are phase-separated into a phase containing boron nitride and a phase containing carbon.
7. A method of manufacturing an electron emitting device, comprising:
forming a pair of electrodes apart from each other on a substrate;
forming a pair of electrically conductive films apart from each other on the electrodes, respectively, a distance between the electrically conductive films being shorter than a distance between the electrodes; and
forming an electron emitting film containing boron and at least one of carbon and nitrogen between the electrically conductive films.
8. The method according to claim 7, wherein a deposition method is utilized for forming the electron emitting film.
9. The method according to claim 7, wherein the formation of the electron emitting film comprises:
depositing a material containing boron and carbon between the electrically conductive films while causing a current to flow between the electrodes in an atmosphere containing at least one of a compound which comprises boron and carbon and a mixture of a compound which comprises boron and a compound which comprises carbon.
10. The method according to claim 9, wherein the atmosphere contains at least one species selected from the group consisting of alkyl borane, aryl borane, vinyl borane, allyl borane and substitution products thereof.
11. The method according to claim 9, wherein the atmosphere contains at least one species selected from the group consisting of alkoxy borane, aryloxy borane, vinyloxy borane, allyloxy borane and substitution products thereof.
12. The method according to claim 7, wherein the formation of the electron emitting film comprises:
depositing a material containing boron and nitrogen on the electrically conductive films while causing a current to flow between the electrodes in an atmosphere containing a compound which comprises boron and nitrogen.
13. The method according to claim 12, wherein the atmosphere contains at least one species selected from the group consisting of amine borane complex, amino borane and a compound having a ring structure of boron and nitrogen.
14. The method according to claim 7, wherein the formation of the electron emitting film comprises:
depositing a material containing boron, nitrogen and carbon between the electrically conductive films while causing a current to flow between the electrodes in an atmosphere containing a compound which comprises boron and nitrogen and a compound which comprises carbon.
15. The method according to claim 14, wherein the atmosphere contains at least one species selected from the group consisting of amine borane complex, amino borane and a compound having a ring structure of boron and nitrogen.
16. The method according to claim 14, wherein the atmosphere contains hydrocarbon.
17. The method according to claim 7, wherein the formation of the electron emitting film comprises:
depositing a material containing carbon between the electrically conductive films while causing a current to flow between the electrodes in a first atmosphere containing a compound which comprises carbon; and
depositing a material containing boron and nitrogen between the electrically conductive films while causing a current to flow between the electrodes in a second atmosphere containing a compound which comprises boron and nitrogen.
18. The method according to claim 17, wherein the second atmosphere contains at least one species selected from the group consisting of amine borane complex, amino borane and a compound having a ring structure of boron and nitrogen.
19. The method according to claim 17, wherein the first atmosphere contains hydrocarbon.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of making a magnetic material comprising:
forming a melt comprising the composition, in atomic percentage, of
(R1\u2212aR\u2032a)uFe100\u2212u\u2212v\u2212w\u2212x\u2212yCovMwTxBy
\u2003rapidly solidifying the melt to obtain a magnetic powder;
thermally annealing the magnetic powder at a temperature range of about 350\xb0 C. to about 800\xb0 C. for about 0.5 minutes to about 120 minutes;
wherein R is Nd, Pr, Didymium (a nature mixture of Nd and Pr at composition of Nd0.75Pr0.25), or a combination thereof; R\u2032 is La, Ce, Y, or a combination thereof; M is one or more of Zr, Nb, Ti, Cr, V, Mo, W, and Hf; and T is one or more of Al, Mn, Cu, and Si, wherein 0.01\u2266a\u22660.8, 7\u2266u\u226613, 0\u2266v\u226620, 0.01\u2266w\u22661, 0.1\u2266x\u22665, and 4\u2266y\u226612, and
wherein the magnetic material exhibits a remanence (Br) value of from about 6.5 kG to about 8.5 kG and an intrinsic coercivity (Hci) value of from about 6.0 kOe to about 9.9 kOe.
2. The method of claim 1, wherein the rapidly solidifying comprises a melt-spinning or jet-casting process at a nominal wheel speed of from about 10 metersecond to about 60 metersecond.
3. The method of claim 2, wherein the nominal wheel speed is from about 35 metersecond to about 45 metersecond.
4. The method of claim 3, wherein an actual wheel speed is within plus or minus 30% of the nominal wheel speed.
5. The method of claim 4, wherein the nominal wheel speed is an optimum wheel speed used in producing the magnetic material by the rapid solidification process, followed by the thermal annealing process.
6. The method of claim 4, wherein the actual wheel speed is within plus or minus 25% of the nominal wheel speed.
7. The method of claim 4, wherein the actual wheel speed is within plus or minus 20% of the nominal wheel speed.
8. The method of claim 4, wherein the actual wheel speed is within plus or minus 15% of the nominal wheel speed.
9. The method of claim 4, wherein the actual wheel speed is within plus or minus 10% of the nominal wheel speed.
10. The method of claim 4, wherein the actual wheel speed is within plus or minus 5.0% of the nominal wheel speed.
11. The method of claim 4, wherein the actual wheel speed is within plus or minus 1.0% of the nominal wheel speed.
12. The method of claim 4, wherein the actual wheel speed is within plus or minus 0.5% of the nominal wheel speed.