1. A method, comprising:
applying a precursor material to an exposed surface of a copper-containing metal region formed in a first dielectric layer of a semiconductor device, said precursor material containing nitrogen and forming a self-aligned precursor layer on said exposed surface; and
activating a chemical reaction of nitrogen contained in said precursor layer to form a self-aligned copper compound in said copper-containing metal region at said surface.
2. The method of claim 1, further comprising preparing said precursor material on the basis of at least one of triazole and a compound thereof.
3. The method of claim 1, wherein said precursor material comprises at least one dopant species for enhancing surface characteristics of said copper-containing metal region with respect to stress induced mass transport.
4. The method of claim 1, wherein said precursor material comprises silicon to form said copper-containing compound in the form of a coppersiliconnitrogen alloy.
5. The method of claim 1, further comprising forming said exposed surface by a chemical mechanical polishing (CMP) process, wherein said precursor material is applied when removing residues of said CMP process.
6. The method of claim 5, further comprising annealing said copper-containing metal region for adjusting a crystalline structure in said copper-containing metal region, wherein said annealing is performed in the presence of said precursor layer.
7. The method of claim 1, further comprising annealing said copper-containing region to adjust a crystalline structure prior to applying said precursor material.
8. The method of claim 1, wherein activating said chemical reaction comprises performing at least one of a plasma treatment, a heat treatment and a radiation based treatment.
9. The method of claim 4, wherein activating said chemical reaction and forming a second dielectric layer are performed as in situ processes.
10. A method, comprising:
providing a precursor material comprising triazole and alloy species;
forming a precursor layer from said precursor material on an exposed surface of a copper-containing region formed in a dielectric layer of a semiconductor device; and
initiating decomposition of said precursor layer to form a cap layer on said surface on the basis of said alloy species.
11. The method of claim 10, wherein said precursor material comprises at least one dopant species to be incorporated into said cap layer.
12. The method of claim 10, further comprising forming said exposed surface by a chemical mechanical polishing (CMP) process, wherein said precursor material is applied during rinsing said surface for removing residues of said CMP process.
13. The method of claim 10, wherein said alloy species comprises silicon.
14. The method of claim 13, wherein initiating said decomposition of said precursor material and forming at least one layer of said dielectric layer are performed as an in situ process.
15. The method of claim 10, further comprising annealing said copper-containing region for adjusting a crystalline structure, wherein said annealing is performed in the presence of said precursor layer to initiate the decomposition thereof.
16. The method of claim 10, further comprising annealing said copper-containing region prior to forming said precursor layer.
17. The method of claim 10, wherein initiating decomposition of said precursor layer comprises at least one of a heat treatment, a plasma assisted process and a radiation assisted process.
18. A method comprising:
forming a copper-containing region in a dielectric layer of a semiconductor device, said copper-containing region comprising an exposed surface;
selectively forming a precursor layer on said exposed surface by applying a precursor solution to said exposed surface, said precursor solution comprising a predefined concentration of silicon and nitrogen; and
initiating decomposition of said precursor layer to incorporate silicon and nitrogen into said surface.
19. The method of claim 18, wherein applying said precursor solution comprises applying said solution in two or more individual process steps.
20. The method of claim 18, wherein said precursor solution is prepared on the basis of a material forming a compound on copper in a self-limiting manner.
The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.
1-10. (canceled)
11. A mould comprising:
a puncher,
a matrix,
said puncher and said matrix having surfaces shaped so as to form, when coupled, a cavity having the shape of the element to be moulded, hereinafter moulded element, and
a removal system, wherein said removal system comprises internal transversal bars and external longitudinal bars.
12. The mould according to claim 11, wherein said internal transversal bars and said external longitudinal bars are conveniently assembled and mutually connected so as to form a single stiff open body apparatus.
13. The mould according to claim 11, wherein the side of said puncher has an angle \u03b8 of inclination relative to the moulding direction, which is also the opening and closing direction of the mould, said angle \u03b8 having a value ranging from 10\xb0 to 20\xb0.
14. The mould according to claim 11, wherein said puncher comprises movable parts consisting of insertions in a puncher middle portion, or movable slices, and one or more insertions superimposed andor laterally arranged relative to said movable slices, or caps.
15. The mould according to claim 14, wherein said movable slices rest directly on the puncher, specifically on a puncher-holder.
16. The mould according to claim 15, wherein said movable slices are connected to one or more, preferably four, supports arranged at the ends of said external longitudinal bars.
17. The mould according to claim 16, wherein said movable slices are connected to the side of the puncher through first T-shaped guides.
18. The mould according to claim 17, wherein said movable slices are connected to the side of the puncher through first T-shaped guides.
19. The mould according to claim 18, wherein said first T-shaped guides are inclination at an angle lower of 0\xb0 and 5\xb0, preferably of 1\xb0, than the angle \u03b8 of the side of the puncher.
20. The mould according to claim 19, wherein said movable slices are connected to the side of the puncher through first T-shaped guides.
21. A mold apparatus comprising:
a mould including a puncher, and a matrix, said puncher and said matrix having surfaces shaped so as to form, when coupled, a cavity having the shape of the element to be moulded, hereinafter moulded element, and
a removal system, wherein said removal system comprises internal transversal bars and external longitudinal bars.
22. The mold apparatus comprising according to claim 21, wherein said internal transversal bars and said external longitudinal bars are conveniently assembled and mutually connected so as to form a single stiff open body apparatus.
23. The mould apparatus according to claim 21, wherein the side of said puncher has an angle \u03b8 of inclination relative to the moulding direction, which is also the opening and closing direction of the mould, said angle \u03b8 having a value ranging from 10\xb0 to 20\xb0.
24. The mould apparatus according to claim 22, wherein said puncher comprises movable parts consisting of insertions in a puncher middle portion, or movable slices, and one or more insertions superimposed andor laterally arranged relative to said movable slices, or caps.
25. An element from a mold comprising:
a puncher,
a matrix,
said puncher and said matrix having surfaces shaped so as to form, when coupled, a cavity having the shape of the element to be moulded, hereinafter moulded element, and
a removal system, wherein said removal system comprises internal transversal bars and external longitudinal bars.
26. The element from a mould according to claim 25, wherein said internal transversal bars and said external longitudinal bars are conveniently assembled and mutually connected so as to form a single stiff open body apparatus.
27. The element from a mould according to claim 25, wherein the side of said puncher has an angle \u03b8 of inclination relative to the moulding direction, which is also the opening and closing direction of the mould, said angle \u03b8 having a value ranging from 10\xb0 to 20\xb0.
28. The element from a mould according to claim 25, wherein said puncher comprises movable parts consisting of insertions in a puncher middle portion, or movable slices, and one or more insertions superimposed andor laterally arranged relative to said movable slices, or caps.