1. A liquid crystal display device, comprising:
a pair of substrates;
liquid crystals put between the pair of substrates;
a plurality of scanning signal lines formed on one of the pair of substrates;
a plurality of image signal lines crossing the scanning signal lines in a matrix form;
thin film transistors formed corresponding to intersections between the scanning signal lines and the image signal lines;
pixel electrodes connected to the thin film transistors;
a gate insulative film covering the scanning signal lines; and
a protection insulative film covering the image signal lines and the thin film transistors;
wherein the scanning signal line includes a multi-layer film including a copper alloy film formed on a transparent conductive film comprising an indium oxide as a main ingredient, and a metal oxide film of an additive metal element of the copper alloy formed between the transparent conductive film and the copper alloy film,
the diffusion coefficient of the additive metal element of the copper alloy in copper being higher than the self-diffusion coefficient of copper, the chemical potential of oxygen gas at equilibrium of oxidation of the additive metal element of the copper alloy being lower than the chemical potential of oxygen gas at equilibrium of oxidation of indium, and the solid solubility of the additive metal element of the copper alloy in copper being greater than 0.1%.
2. The liquid crystal display device according to claim 1, wherein the additive metal element of the copper alloy comprises one or more elements selected from aluminum, beryllium, chromium, gallium, magnesium, manganese, titanium, vanadium, and zinc.
3. A liquid crystal display device, comprising:
a pair of substrates;
liquid crystals put between the pair of substrates;
a plurality of scanning signal lines formed on one of the pair of substrates;
a plurality of image signal lines crossing the scanning signal lines in a matrix form;
thin film transistors formed corresponding to intersections between the scanning signal lines and the image signal lines;
pixel electrodes connected to the thin film transistors;
a gate insulative film covering the scanning signal lines; and
a protection insulative film covering the image signal lines and the thin film transistors;
wherein the scanning signal line includes a multi-layer film including a copper alloy film formed on a transparent conductive film comprising an zinc oxide as a main ingredient and a metal oxide film of an additive metal element of the copper alloy formed between the transparent conductive film and the copper alloy film,
the diffusion coefficient of the additive metal element of the copper alloy in copper being higher than the self-diffusion coefficient of copper, the chemical potential of oxygen gas at equilibrium of oxidation of the additive metal element of the copper alloy being lower than the chemical potential of oxygen gas at equilibrium of oxidation of zinc, and the solid solubility of the additive metal element of the copper alloy in copper being greater than 0.1%.
4. The liquid crystal display device according to claim 3, wherein the additive metal element of the copper alloy comprises one or more elements selected from aluminum, beryllium, chromium, gallium, magnesium, manganese, titanium, and vanadium.
5. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is an in-plane-switching type, in which the content of the additive metal element of the copper alloy film formed above the transparent conductive film is 0.5 at % or more and 2 at % or less.
6. The liquid crystal display device according to claim 1, wherein the thickness of the metal oxide film formed between the transparent conductive film and the copper alloy film is within a range from 0.5 nm to 3 nm.
7. The liquid crystal display device according to claim 1, wherein the electric resistivity of the scanning signal line is lower than 3.7 \u03bc\u03a9cm.
8. A liquid crystal display device, comprising:
a pair of substrates;
liquid crystals put between the pair of substrates;
a plurality of scanning signal lines formed on one of the pair of substrates;
a plurality of image signal lines crossing the scanning signal lines in a matrix form;
thin film transistors formed corresponding to intersections between the scanning signal lines and the image signal lines;
pixel electrodes connected to the thin film transistors;
a gate insulative film covering the scanning signal lines; and
a protection insulative film covering the image signal lines and the thin film transistors;
wherein the gate insulative film comprises a silicon nitride, and
wherein the image signal line includes a multi-layer film including a copper alloy film formed above the gate insulative film and a metal nitride film of an additive metal element of the copper alloy formed between the gate insulative film and the copper alloy film,
the diffusion coefficient of the additive metal element of the copper alloy in copper being higher than the self-diffusion coefficient of copper, the chemical potential of nitrogen gas at equilibrium of nitridation of the additive metal element of the copper alloy being lower than the chemical potential of nitrogen gas at equilibrium of nitridation of silicon, and the solid solubility of the additive metal element of the copper alloy in copper being greater than 0.1%.
9. The liquid crystal display device according to claim 8, wherein the additive metal element of the copper alloy comprises one or more elements selected from aluminum, beryllium, magnesium, titanium, and vanadium.
10. A liquid crystal display device, comprising:
a pair of substrates;
liquid crystals put between the pair of substrates;
a plurality of scanning signal lines formed on one of the pair of substrates;
a plurality of image signal lines crossing the scanning signal lines in a matrix form;
thin film transistors formed corresponding to intersections between the scanning signal lines and the image signal lines;
pixel electrodes connected to the thin film transistors;
a gate insulative film covering the scanning signal lines; and
a protection insulative film covering the image signal lines and the thin film transistors;
wherein the thin film transistor has a semiconductor layer comprising amorphous silicon, a contact layer thereover comprising n+ type amorphous silicon and a drain electrode and a source electrode thereabove,
the drain electrode and the source electrode including a multi-layer film including a copper alloy film formed above the contact layer and a silicide film of an additive metal element of the copper alloy formed between the contact layer and the copper alloy film,
the diffusion coefficient of the additive metal element of the copper alloy in copper being higher than the self-diffusion coefficient of copper, the Gibbs free energy of formation of the silicide of the additive metal element of the copper alloy being negative, and the solid solubility of the additive metal element of the copper alloy in copper being greater than 0.1%.
11. The liquid crystal display device according to claim 10, wherein the additive metal element of the copper alloy comprises one or more elements selected from chromium, magnesium, manganese, titanium, and vanadium.
12. The liquid crystal display device according to claim 1, wherein the liquid crystal display device is an in-plane-switching type further having a common transparent electrode formed in a pixel region surrounded by the scanning signal lines and the image signal lines, and a common signal line connected to the common transparent electrode in adjacent to and parallel with the scanning signal lines.
13. A liquid crystal display device, comprising:
a pair of substrates;
liquid crystals put between the pair of substrates;
a plurality of scanning signal lines formed on one of the pair of substrates;
a plurality of image signal lines crossing the scanning signal lines in a matrix form;
thin film transistors comprising silicon nitride formed corresponding to intersections between the scanning signal lines and the image signal lines;
pixel electrodes connected to the thin film transistors;
a gate insulative film covering the scanning signal lines; and
a protection insulative film covering the image signal lines and the thin film transistors;
wherein the scanning signal line includes a multi-layer film including a copper alloy film formed above a glass substrate, a metal oxide film of an additive metal element of the copper alloy formed between the glass substrate and the copper alloy film, and a metal nitride film of an additive metal element of the copper alloy formed between the copper alloy film and the gate insulative film,
the diffusion coefficient of the additive metal element of the copper alloy in copper being higher than the self-diffusion coefficient of copper, the chemical potential of oxygen gas at equilibrium of oxidation of the additive metal element of the copper alloy being lower than the chemical potential of oxygen gas at equilibrium of oxidation of indium, the chemical potential of nitrogen gas at equilibrium of nitridation of the additive metal element of the copper alloy being lower than the chemical potential of nitrogen gas at equilibrium of nitridation of silicon, and the solid solubility of the additive metal element of the copper alloy in copper being greater than 0.1%.
14. A method of manufacturing an in-plane-switching type liquid crystal display device having thin film transistors formed corresponding to intersections between scanning signal lines and image signal lines, a common transparent electrode formed in pixel regions surrounded by the scanning signal lines and the image signal lines, pixel electrodes formed in the pixel regions and connected to the thin film transistors, in which molecules of liquid crystals are driven by a voltage applied between the common transparent electrode and the pixel electrode, the method comprising the steps of;
a first photolithographic step of forming, above a substrate, a first transparent conductive film comprising an indium oxide or zinc oxide and a first copper alloy film containing a first additive metal element in this order successively by sputtering, and forming a common transparent electrode having a first transparent conductive film and a first copper alloy film in a predetermined region above the substrate by photolithography using a half photomask,
a second photolithographic step of forming a silicon nitride film, an amorphous silicon film and an n+ type amorphous silicon film successively in this order so as to cover the first transparent conductive film and the first copper alloy film by plasma-enhanced chemical vapor deposition, and forming an island-like pattern containing a gate insulative film comprising silicon nitride, a semiconductor layer comprising amorphous silicon, and a contact layer comprising n+ type amorphous silicon by photolithography using a binary photomask,
a third photolithographic step of forming a second copper alloy film containing a second additive metal element so as to cover the island-like pattern by sputtering, and forming the second copper alloy film in a region for forming a drain electrode and a source electrode by photolithography using a binary photomask,
a fourth photolithographic step of forming a silicon nitride film so as to cover the second copper alloy film by plasma-enhanced chemical vapor deposition, and forming a protection insulative film comprising silicon nitride by photolithography using a binary photomask, and
a fifth photolithographic step of forming a second transparent conductive film comprising an indium oxide or zinc oxide so as to cover the protection insulative film by sputtering, and forming a pixel electrode comprising the second transparent conductive film, a scanning signal line terminal, a common signal line terminal, and an image signal line terminal by photolithography using a binary photomask.
15. The method of manufacturing an in-plane-switching type liquid crystal display device according to claim 14,
wherein an oxide film of the first additive metal element is formed between the first transparent conductive film and the first copper alloy film, which are formed in the first photolithographic step, when the silicon nitride film, the amorphous silicon film, and the n+ type amorphous silicon film are formed in the second photolithographic step.
16. The method of manufacturing an in-plane-switching type liquid crystal display device according to claim 14, wherein,
a silicide film of the second additive metal element is formed between the contact layer formed by the second photolithographic step and the second copper alloy film formed by the third photolithographic step when the protection insulative film is formed in the fourth lithographic step.
17. The method of manufacturing an in-plane-switching type liquid crystal display device according to claim 14,
wherein a nitride film of the second additive metal element is formed between the gate insulative film formed in the second photolithographic step and the second copper alloy film formed in the third photolithographic step when the protection insulative film is formed in the fourth photolithographic step.
18. A method of manufacturing an in-plane-switching type liquid crystal display device having thin film transistors formed corresponding to intersections between scanning signal lines and image signal lines, a common transparent electrode formed in pixel regions surrounded by scanning signal lines and the image signal lines, pixel electrodes formed in the pixel regions and connected to the thin film transistors, in which molecules of liquid crystals are driven by a voltage applied between the common transparent electrode and the pixel electrode, the method comprising the steps of;
a first photolithographic step of forming, above a substrate, a first transparent conductive film comprising an indium oxide or zinc oxide and a first copper alloy film containing a first additive metal element in this order successively by sputtering, and forming a common transparent electrode having a first transparent conductive film and a first copper alloy film to a predetermined region above the substrate by photolithography using a half photo-mask,
a second photolithographic step of forming a silicon nitride film, an amorphous silicon film, and an n+ type amorphous silicon film successively in this order so as to cover the first transparent conductive film and the first copper alloy film by plasma-enhanced chemical vapor deposition, then forming a second copper alloy film containing a second additive metal element by sputtering, and forming an island-like pattern including a gate insulative film comprising silicon nitride, a semiconductor layer comprising amorphous silicon, a contact layer comprising n+ type amorphous silicon and a drain electrode and a source electrode, the drain electrode and the source electrode comprising the second copper alloy film, by photolithography using a half photomask,
a third photolithographic step of forming a silicon nitride film by plasma-enhanced chemical vapor deposition so as to cover the island-like pattern, and forming a protection insulative film comprising silicon nitride by photolithography using a binary photomask, and
a fourth photolithographic step of forming a second transparent conductive film comprising an indium oxide or zinc oxide so as to cover the protection insulative film by sputtering, and forming a pixel electrode, a scanning signal line terminal, a common signal line terminal, and an image signal line terminal, the pixel electrode, the scanning signal line terminal, the common signal line terminal, and the image signal line terminal comprising the second transparent conductive film, by photolithography using a binary photo-mask.
19. The method of manufacturing an in-plane-switching type liquid crystal display device according to claim 18,
wherein an oxide film of the first additive metal element is formed between the first transparent conductive film and the first copper alloy film, which are formed in the first photolithographic step, when the silicon nitride film, the amorphous silicon film, and the n+ type amorphous silicon film are formed in the second photolithographic step.
20. The method of manufacturing an in-plane-switching type liquid crystal display device according to claim 18,
wherein a silicide film of the second additive metal element is formed between the contact layer and the second copper alloy film, which are formed in the second photolithographic step, when the protection insulative film is formed in the third photolithographic step.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A system configured to establish a connection between a first and a second communication device, the first communication device configured to support separate voice and data channels, and further configured to send a pair of a first and second establishment requests, the first request being sent via the data channel and the second request being sent via a signaling channel associated with the voice channel, the system comprising:
a proxy configured to receive the first establishment request;
a gateway configured to receive the second establishment request, the gateway configured to forward the received second establishment request to the proxy, wherein the proxy is configured to only forward the earliest received establishment request of the pair of requests to a selected one of a plurality of call control servers; and
an authorization module configured to give authorization to the proxy to forward the earliest received establishment request of the pair of requests to the selected call control server.
2. The system of claim 1, wherein the connection is an Internet protocol (IP) connection.
3. The system of claim 1, wherein the data channel is a packet data channel.
4. The system of claim 1, wherein the first establishment request is sent in a first format, and the second establishment request is sent in a second format.
5. The system of claim 1, wherein the gateway is further configured to convert the received second establishment request into the first format prior to forwarding the converted establishment request to the proxy.
6. The system of claim 1, wherein the selected call control server is configured to establish the IP connection with the second communication device.
7. The system of claim 1, wherein the first establishment request is a session initiation protocol (SIP) message.
8. The system of claim 1, wherein the second establishment request is a session initiation protocol (SIP) message encapsulated in a short message system (SMS) format.
9. The system of claim 1, wherein the gateway is configured to ignore any establishment requests received a predetermined length of time after the transmission of the received message.
10. The system of claim 9, wherein the predetermined length of time is less than or equal to 32 seconds.
11. The system of claim 1, wherein the data channel is a code division multiple access (CDMA) packet data channel.
12. The system of claim 1, wherein the voice channel is a code division multiple access (CDMA) voice channel.
13. A push-to-talk service using a system in accordance with claim 1.
14. A method of establishing a connection between a first and a second communication device, the first communication device supporting separate voice and data channels, the method comprising:
sending, from the first communication device, a first connection establishment request via the data channel and a second connection establishment request via a signaling channel associated with the voice channel;
receiving the first connection establishment request at a proxy;
receiving the second connection establishment request at a gateway;
forwarding the second connection establishment request from the gateway to the proxy;
obtaining, at the proxy, authorization to forward the earliest received connection establishment request of the pair of requests to a call control server; and
forwarding only the earliest connection establishment request of the pair of requests received at the proxy to a selected one of a plurality of call control servers.
15. The method of claim 14, wherein the connection is an Internet protocol (IP) connection.
16. The method of claim 14, wherein the sending the first connection establishment request and the second connection establishment request comprises sending the first connection establishment request in a first format, and sending the second connection establishment request in a second format.
17. The method of claim 14, further comprising converting, at the gateway, the received second connection establishment request into the first format prior to forwarding the converted connection establishment request to the proxy.
18. The method of claim 14, further comprising establishing, through the selected call control server, the IP connection with the second communication device.
19. The method of claim 14, wherein the first connection establishment request is a session initiation protocol (SIP) message.
20. The method of claim 14, wherein the second connection establishment request is a session initiation protocol (SIP) message encapsulated in a short message system (SMS) format.
21. The method of claim 14, further comprising ignoring, at the gateway, any connection establishment requests received a predetermined length of time after the transmission of the received message.
22. The method of claim 14, wherein the data channel is a code division multiple access (CDMA) packet data channel.
23. The method of claim 14, wherein the voice channel is a code division multiple access (CDMA) voice channel.
24. A push-to-talk service operating in accordance with claim 14.