1. A manufacturing method for a semiconductor device, comprising the steps of:
forming a passivation film that covers a surface of a semiconductor substrate on which electrodes have been formed, in which an opening is formed so as to expose a predetermined electrode from among the electrodes;
forming a diffusion prevention plug made of a first metal in the vicinity of the opening in the passivation film;
supplying a second metal material to the surface of the semiconductor substrate on which the diffusion prevention plug has been formed, so as to form a seed layer made of the second metal;
forming a resist film that covers the seed layer and in which an opening is formed so as to expose a predetermined region of the seed layer on the diffusion prevention plug;
supplying a third metal material into the opening in the resist film so as to form a protrusion electrode made of the third metal;
removing the resist film after the step of forming the protrusion electrode; and
removing the seed layer after the step of forming the protrusion electrode.
2. A manufacturing method for a semiconductor device according to claim 1, wherein
the step of removing the seed layer includes an etching step of removing the seed layer by means of etching, and
the diffusion prevention plug is made of the first metal material of which the etching rate is lower than that of the seed layer for an etching medium used in the etching step.
3. A manufacturing method for a semiconductor device according to claim 1, wherein the step of forming the diffusion prevention plug includes the step of supplying the first metal material onto the predetermined electrode on the semiconductor substrate by means of an electroless plating method, so as to form the diffusion prevention plug made of the first metal on the electrode.
4. A manufacturing method for a semiconductor device according to claim 1, wherein the seed layer and the protrusion electrode are made of the same metal material.
5. A manufacturing method for a semiconductor device according to claim 1, wherein
the resist film is made of a material having photosensitivity, and
the step of forming the resist film includes the step of forming an opening by developing after exposing the resist film via a mask having a predetermined pattern.
6. A manufacturing method for a semiconductor device according to claim 1, wherein the step of forming the protrusion electrode includes the step of supplying the third metal material to the predetermined region of the seed layer by means of an electrolysis plating method.
7. A manufacturing method for a semiconductor device according to claim 1, wherein the step of removing the seed layer includes the step of removing the portion of the seed layer that is exposed from the protrusion electrode, by means of a dry type anisotropic etching method.
8. A manufacturing method for a semiconductor device according to claim 1, wherein the step of removing the seed layer includes the step of removing the portion of the seed layer that is exposed from the protrusion electrode, by means of a wet etching method.
9. A manufacturing method for a semiconductor device according to claim 1, wherein the width of the opening in the resist film is greater than the width of the diffusion prevention plug.
10. (canceled)
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A contactless communication device comprising:
a substrate;
a contactless communication unit (CCU) mounted to the substrate, the CCU comprising a transducer; and
a beam shaping reflector that partially enshrouds the CCU, wherein the transducer is operative to selectively transmit and receive contactless signals along a signal-shaped path at least partially defined by the beam shaping reflector.
2. The device of claim 1, wherein the reflector comprises a focal region, and wherein signal energy is concentrated in the focal region.
3. The device of claim 2, wherein the transducer is positioned in the focal region.
4. The device of claim 1, wherein the reflector comprises:
a concave portion that defines a volume, wherein the transducer is contained in the volume.
5. The device of claim 4, wherein the concave portion comprises a beam focal region, and wherein the transducer is position in the beam focal region.
6. The device of claim 1, wherein the beam shaping reflector mitigates cross-talk.
7. The device of claim 1, wherein the beam shaping reflector comprises first and second outer surfaces, the beam shaping reflector further comprising:
a first conductive plate mounted to the first outer surface; and
a second conductive plate mounted to the second outer surface, wherein the first and second conductive plates are operative to define the signal-shaped path.
8. The device of claim 1, wherein the beam shaping reflector comprises a curved portion.
9. A beam directing system comprising:
a first beam directing structure comprising:
at least a first signal blocking portion operative to block transmission of contactless signals;
at least a first signal collimating portion positioned within the first signal blocking portion, the signal collimating portion operative to collimate contactless signals that pass through the first beam directing structure; and
a second beam directing structure comprising:
at least a second signal blocking portion operative to block transmission of contactless signals; and
at least a second signal collimating portion positioned within the second signal blocking portion, the signal collimating portion operative to collimate signals that pass through the second beam directing structure,
wherein the first and second beam directing structure are aligned with respect to each other such that the first and second collimating portions are substantially co-axially aligned.
10. The system of claim 9, further comprising:
a first contactless communication unit (CCU) positioned adjacent to the first beam directing structure, the first CCU operative to selectively transmit the contactless signals through the first beam directing structure and receive the contactless signals from the first beam directing structure.
11. The system of claim 10, further comprising:
a second CCU positioned adjacent to the second beam directing structure, the second CCU operative to selectively transmit the contactless signals through the second beam directing structure and receive the contactless signals from the second beam directing structure.
12. The system of claim 9, wherein a fixed distance exists between the first and second beam directing structures, wherein the fixed distance is based on a wavelength of the contactless signals.
13. The system of claim 12, wherein the fixed distance is occupied by a dielectric.
14. The system of claim 13, wherein the dielectric comprises air.
15. The system of claim 9, wherein the first and second signal collimating portions each comprises at least one slot antenna.
16. The system of claim 9, wherein the first and second signal collimating portion each comprise a dielectric material.
17. The system of claim 9, wherein the first and second signal blocking portions each comprises a conductive material.
18. The system of claim 9, further comprising:
at least a third collimating portion positioned within the signal blocking portion of the first structure;
a third CCU aligned with respect to the third collimating portion;
at least a fourth collimating portion positioned within the signal blocking portion of the second structure; and
a fourth CCU aligned with respect to the fourth collimating portion,
wherein the third and fourth signal collimating portions are co-axially aligned.
19. A mezzanine beam guide, comprising:
a substrate having a central axis;
a first contactless communication unit (CCU) mounted to the substrate at a first location along the central axis, the first CCU comprising a first transducer oriented in a first direction;
a second CCU mounted to the substrate at a second location along the central axis, the second CCU comprising a second transducer oriented in a second direction;
at least a first beam directing structure characterized as a first type mounted on the substrate adjacent to the first transducer;
at least a second beam directing structure characterized as the first type mounted on the substrate adjacent to the second transducer;
at least a third beam directing structure characterized as a second type mounted to the substrate adjacent to the first CCU;
at least a fourth beam directing structure characterized as the second type mounted to the substrate adjacent to the second CCU; and
at least a first beam dissipating structure mounted on the substrate between the first and second CCUs,
wherein the first, second, third, and fourth beam directing structures, and the first beam dissipating structure collectively shape signal paths of contactless signals for the first and second CCUs.
20. The mezzanine structure of claim 19, wherein the first beam dissipating structure is positioned based on at least one desired signal path of contactless signals.
21. The mezzanine structure of claim 19, further comprising:
a third CCU mounted to the substrate at a third location along the central axis, the third CCU comprising a third transducer oriented in a third direction;
at least a second beam dissipating structure mounted on the substrate between the second and third CCUs;
at least a fifth beam directing structure characterized as the first type mounted on the substrate adjacent to the third transducer; and
at least a sixth beam dissipating structure characterized the second type mounted on the substrate.
22. The mezzanine structure of claim 19, wherein the first and second beam directing structures each comprise a dielectric material having a first dielectric constant.
23. The mezzanine structure of claim 22, wherein the third and fourth beam directing structures each comprise a dielectric material having a second dielectric constant, wherein the second dielectric constant is less than the first dielectric constant.
24. The mezzanine structure of claim 19, wherein the third and fourth beam directing structures each operative to direct contactless signals in a direction orthogonal to the central axis.
25. The mezzanine structure of claim 19, wherein the third and fourth beam directing structures each comprises contactless signal reflecting material.
26. A mezzanine beam guide, comprising:
a substrate;
a plurality of contactless communication units (CCUs) mounted to the substrate; and
a mezzanine beam guide operative to guide contactless signals in a direction perpendicular to a CCU mounting surface of the substrate and mitigate lateral and multi-path crosstalk.
27. The mezzanine beam guide of claim 26, further comprising a beam-forming directing structure mounted on top of the mezzanine beam guide.
28. The mezzanine beam guide of claim 26, wherein the beam-forming directing structure comprises a superstrate and a plurality of wave-guiding tuned metal structures.
29. The mezzanine beam guide of claim 28, wherein a first subset of the plurality of wave-guiding tuned metal structures are vertically stacked above one of the CCUs.
30. The mezzanine beam guide of claim of 29, wherein the first subset of the plurality of wave-guiding tuned metal structures comprises at least two wave-guiding tuned metal structures that are arranged in a stack, wherein a fixed distance exist between immediately adjacent metal structures.
31. The mezzanine beam guide of claim 29, wherein the first subset is positioned above a transducer of the CCU.
32. The mezzanine beam guide of claim 28, wherein each of the CCUs is associated with respective subsets of the plurality of wave-guiding tuned metal structures.
33. The mezzanine beam guide of claim 32, wherein each subset comprises at least two wave-guiding tuned metal structures arranged in a vertical stack that rises above its respective CCU.
34. The mezzanine beam guide of claim 32, wherein each subset comprises at least two wave-guiding tuned metal structures arranged in a horizontal stack that spreads across a plane that is co-planar with its respective CCU.
35. A superstrate beam guiding structure for use in conjunction with a contactless communications unit (CCU), the structure comprising:
a plurality of wave-guiding tuned metal structures that are embedded in a dielectric material that is dimensioned to be mounted to a substrate containing the CCU,
wherein the wave-guiding tuned metal structures assist in defining a signal path for contactless signal wave propagation.
36. The superstrate of claim 35, wherein the signal path is arranged in a vertical direction that is perpendicular to a plane of the superstrate.
37. The superstrate of claim 35, wherein the signal path is arranged in a horizontal direction that is coplanar with a plane of the superstrate.
38. The superstrate of claim 35, wherein the signal path is arranged in horizontal and vertical directions.
39. The superstrate of claim 35, wherein each of the wave-guiding tuned metal structures are dimensioned and spaced apart from each other based on the dielectric material and a frequency and a wavelength of a contactless signal.
40. The superstrate of claim 35, wherein the dielectric material occupies space existing between each of the wave-guiding tuned metal structures.
41. An apparatus comprising:
a circuit board including a first surface and second surface, wherein a distance between the first and second surfaces defines a thickness, wherein the circuit board comprises:
a first contactless communications unit (CCU) mounting region existing on the first surface;
a first signal blocking structure positioned beneath the first CCU mounting region within the thickness;
a second CCU mounting region existing on the first surface;
a second signal blocking structure positioned beneath the second CCU mounting region within the thickness;
wherein the first and second signal blocking structures are operative to inhibit transmission of contactless signals through the circuit board.
42. The apparatus of claim 41, wherein the first signal blocking structure comprises a plurality of conductive plates.
43. The apparatus of claim 41, wherein the first signal blocking structure is constructed from a material having a dielectric constant that is less than a dielectric constant of the circuit board.
44. The apparatus of claim 41, wherein the first signal blocking structure comprises at least one conductive plate and a conductive block secured to the conductive plate.
45. The apparatus of claim 41, wherein the first signal blocking structure comprises a conductive plate and a plurality of conductive vias extending from the conductive plate to form a conductive fence.
46. A system comprising:
a first conductive housing comprising a first inner surface and a second inner surface;
a circuit board secured to the first inner surface, the circuit board comprising a ground layer; and
a first contactless communications unit (CCU) mounted on the circuit board, wherein contactless signals are transmitted by the CCU and are intended for a target CCU,
wherein a distance between the ground layer and the second inner surface is defined to minimize contactless signal propagation beyond the target CCU.
47. The system of claim 46, further comprising
a second conductive housing comprising the target CCU.
48. The system of claim 47, wherein the first and second conductive housing are spaced a fixed distance apart to mitigate contactless signal leakage.