1. A device comprising:
an inter layer dielectric (ILD);
a conductive body over the ILD, the conductive body having nano channels, each nano channel comprising:
an insulating layer deposited in the nano channels; and
a metal filling the remaining space in the nano channels;
a source contact electrically connected to the conductive body through the ILD;
a gate contact through the ILD and through, but electrically insulated from, the conductive body; and
a drain contact through the ILD and through, but electrically insulated from, the conductive body.
2. The device according to claim 1, wherein the insulating layer comprises a high-k oxide.
3. The device according to claim 1, wherein the channels have a depth of 80 to 90% of a thickness of the conductive body.
4. The device according to claim 1, wherein the nano channels have a pitch of 50 nanometers (nm) to 100 nm.
5. The device according to claim 1, wherein the ILD has a thickness of 50 nm to 150 nm.
6. The device according to claim 1, wherein the ILD comprises a material that has etch selectivity with the conductive body.
7. The device according to claim 6, wherein:
the conductive body comprises doped polysilicon; and
the ILD comprises silicon nitride (SiN).
8. The device according to claim 1, wherein the conductive body comprises germanium.
9. The device according to claim 1, further comprising:
holes through the ILD and the conductive body down to the gate and drain contacts;
an insulating liner between the conductive body and the holes; and
a metal filling the holes, but electrically isolated from the conductive body.
10. The device according to claim 9, wherein the insulating liner comprises silicon oxide or a high-k oxide and has a thickness less than 5 nanometers (nm).
11. The device according to claim 1, further comprising:
a transistor under the ILD; and
a second ILD over the transistor, but under the first ILD, wherein the source, gate, and drain contacts are formed through the second ILD and are electrically connected to a source, gate, and drain, respectively, of the transistor.
12. The device according to claim 11, wherein the ILD comprises a material that has etch selectivity with the second ILD.
13. The device according to claim 12, wherein the ILD comprises silicon nitride (SiN) and the second ILD comprises silicon dioxide (SiO2).
14. A device comprising:
a transistor on a substrate, the transistor having a source, a drain, and gate;
a first inter layer dielectric (ILD) over the transistor;
gate and drain contacts formed through the first ILD and electrically connected to the gate and drain, respectively, of the transistor;
a second ILD over the first ILD and the gate and drain contacts, the second ILD comprising a material that has etch selectivity with the first ILD;
a source contact formed through the first and second ILDs and electrically connected to the source of the transistor;
a conductive body over the second ILD and the source contact, the conductive body having nano channels, each nano channel comprising:
an insulating layer deposited in the nano channels; and
a metal filling the remaining space in the nano channels;
first and second holes formed through the conductive body and the second ILD over the gate and drain contacts, respectively, the first and second holes each having a first portion through the second ILD and a second portion through the conductive body;
an insulating liner on sidewalls of the second portion of each of the first and second holes; and
a metal filling the first portion and a remainder of the second portion of each of the first and second holes.
15. The device according to claim 14, wherein the insulating layer comprises a high-k oxide.
16. The device according to claim 14, wherein the nanochannels have a depth of 80 to 90% of a thickness of the conductive body and a pitch of 50 nanometers (nm) to 100 nm.
17. The device according to claim 14, wherein the first ILD comprises a material that has etch selectivity with the conductive body and has a thickness of 50 nm to 150 nm.
18. The device according to claim 14, wherein the insulating liner comprises silicon oxide or a high-k oxide and has a thickness less than 5 nanometers (nm).
19. The device according to claim 14, wherein the ILD comprises silicon nitride (SiN) and the second ILD comprises silicon dioxide (SiO2).
20. A device comprising:
a transistor on a substrate, the transistor having a source, a drain, and gate;
a first inter layer dielectric (ILD) over the transistor, the first ILD having etch selectivity with the conductive body and having a thickness of 50 nm to 150 nm;
gate and drain contacts formed through the first ILD and electrically connected to the gate and drain, respectively, of the transistor;
a second ILD over the first ILD and the gate and drain contacts, the second ILD comprising a material that has etch selectivity with the first ILD;
a source contact formed through the first and second ILDs and electrically connected to the source of the transistor;
a conductive body over the second ILD and the source contact, the conductive body having nano channels, the nano channels having a depth of 80 to 90% of a thickness of the conductive body and a pitch of 50 nanometers (nm) to 100 nm, and each nano channel comprising:
a high-k oxide insulating layer deposited in the nano channels; and
a metal filling the remaining space in the nano channels;
first and second holes formed through the conductive body and the second ILD over the gate and drain contacts, respectively, the first and second holes each having a first portion through the second ILD and a second portion through the conductive body;
a silicon oxide or a high-k oxide insulating liner on sidewalls of the second portion of each of the first and second holes, the insulating liner having a thickness less than 5 nanometers (nm); and
a metal filling the first portion and a remainder of the second portion of each of the first and second holes.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for transmitting notification messages in a submission of multimedia messages to telecommunications devices embodied as multimedia message sinks, the method comprising:
generating a joint notification message intended for a target telecommunications device without knowledge of whether or not the target telecommunications device is suitable for handling multimedia messages, the joint notification message including both (a) a text notification that a multimedia message is available for retrieval from a service center and (b) a binary-coded notification that the multimedia message is available for retrieval from the service center; and
transmitting the joint notification message including both the text notification information and binary-coded notification regarding the multimedia message to the target telecommunications device, such that:
if the target telecommunications device is suitable for handling multimedia messages, the target telecommunications device can evaluate the binary-coded notification and in response retrieve the multimedia message from the service center; and
if the target telecommunications device is not suitable for handling multimedia messages, the target telecommunications device can evaluate the text notification and in response retrieve the multimedia message from the service center.
2. A method for transmitting notification messages as claimed in claim 1, wherein the joint notification message is transmitted as a short message using a Short Message Service.
3. A method for transmitting notification messages as claimed in claim 1, wherein the joint notification message is transmitted as a modified WAP push message using a modified Wireless Application Protocol service.
4. A method for transmitting notification messages as claimed in claim 1, wherein the joint notification message is transmitted as a modified MWI message using a modified Message Waiting Indication service.
5. A method for transmitting notification messages as claimed in claim 1, wherein a telecommunications device suitable for multimedia messages is used as a transmitting terminal and a telecommunications device suitable for short messages and unsuitable for multimedia messages is used as the target telecommunications device.
6. A method for transmitting notification messages as claimed in claim 1, wherein a telecommunications device suitable for multimedia messages is used as a transmitting terminal and a telecommunications device suitable for multimedia messages is used as the target telecommunications device.
7. A service center for generating and transmitting notification messages regarding multimedia messages in a communications network, the service center comprising logic instructions embodied in computer-readable media and executable by one or more processors operable to:
generate a joint notification message intended for a target telecommunications device without knowledge of whether or not the target telecommunications device is suitable for handling multimedia messages, the joint notification message including both (a) a text notification that a multimedia message is available for retrieval from a service center and (b) a binary-coded notification that the multimedia message is available for retrieval from the service center; and
transmit the joint notification message including both the text notification information and binary-coded notification regarding the multimedia message to the target telecommunications device, such that:
if the target telecommunications device is suitable for handling multimedia messages, the target telecommunications device can evaluate the binary-coded notification and in response retrieve the multimedia message from the service center; and
if the target telecommunications device is not suitable for handling multimedia messages, the target telecommunications device can evaluate the text notification and in response retrieve the multimedia message from the service center.
8. A telecommunications device for use in a communications network, the telecommunications device comprising logic instructions embodied in computer-readable media and executable by one or more processors operable to:
receive, from a service center storing a multimedia message intended for delivery to the telecommunications device, a joint notification message including both (a) a text notification that the multimedia message is available for retrieval from the service center and (b) a binary-coded notification that the multimedia message is available for retrieval from the service center;
if the telecommunications device is suitable for handling multimedia messages, evaluate the binary-coded notification and, in response, retrieve the multimedia message from the service center; and
if the telecommunications device is not suitable for handling multimedia messages, evaluate the text notification and, in response, retrieve the multimedia message from the service center.