1. A pyrene-based compound represented by Formula 1 below:
wherein,
E1 and E2 are each independently an electron withdrawing group selected from \u2014F; \u2014CN; or a C1-C60 alkyl group substituted with at least one \u2014F;
the A1 ring and A2 ring are each independently a C6-C30 aromatic ring;
R10 is selected from a hydrogen atom, a deuterium atom, a hydroxyl group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C1-C60 alkoxy group, or a C6-C60 aryl group;
R1 to R4 are each independently within each ring, and across rings, at least one selected from,
a hydrogen atom, a deuterium atom, \u2014F, \u2014Cl, \u2014Br, \u2014I, \u2014CN, a hydroxy group, a nitro group, an amino group, an amidino group, a hydrazine, a hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C1-C60 alkoxy group, a C2-C60 alkenyl group, and a C2-C60 alkynyl group,
a C1-C60 alkyl group, a C1-C60 alkoxy group, a C2-C60 alkenyl group, or a C2-C60 alkynyl group, substituted with at last one of a deuterium atom, \u2014F, \u2014Cl, \u2014Br, \u2014I, \u2014CN, a hydroxyl group, a nitro group, an amino group, an amidino group, a hydrazine, a hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, or a phosphoric acid group or a salt thereof,
a C3-C10 cycloalkyl group, a C3-C10 cycloalkenyl group, a C6-C60 aryl group, a C2-C60 heteroaryl group, a C6-C60 aralkyl group, a C6-C60 aryloxy group, or a C6-C60 arylthio group,
a C3-C10 cycloalkyl group, a C3-C10 cycloalkenyl group C6-C60 aryl group, a C2-C60 heteroaryl group, a C6-C60 aralkyl group, a C6-C60 aryloxy group, and a C6-C60 arylthio group, substituted with at least one of a deuterium atom, \u2014F, \u2014Cl, \u2014Br, \u2014I, \u2014CN, a hydroxyl group, a nitro group, an amino group, an amidino group, a hydrazine, a hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C60 alkyl group, a C1-C60 alkyl group substituted with at least one \u2014F, a C1-C60 alkoxy group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C6-C60 aryl group, a C6-C60 aryl group substituted with at least one \u2014F, or a C2-C60 heteroaryl group, and
\u2014N(Q1)(Q2) or \u2014Si(Q3)(Q4)(Q5), where Q1 to Q5 are each independently selected from a C1-C60 alkyl group, a C1-C60 alkoxy group, a C2-C60 alkenyl group, a C2-C60 alkynyl group, a C3-C60 cycloalkyl group, a C3-C60 cycloalkenyl group, a C6-C60 aryl group, a C2-C60 heteroaryl group, a C6-C60aralkyl group, a C6-C60 aryloxy group, and a C6-C60 arylthio group, and
a to d are each independently an integer from 1 to 4.
2. The pyrene-based compound of claim 1, wherein the pyrene-based compound is a compound represented by Formula 1(1) below:
3. The pyrene-based compound of claim 1, wherein E1 and E2 both are \u2014F.
4. The pyrene-based compound of claim 1, wherein the A1 ring and the A2 ring are each independently selected from a benzene ring, a naphthalene ring, an anthracene ring, a fluorene ring, a pyrene ring, a chrysene ring, and a phenanthrene ring.
5. The pyrene-based compound of claim 1, wherein the A1 ring and the A2 ring are each independently a benzene ring or a naphthalene ring.
6. The pyrene-based compound of claim 1, wherein R10 is selected from a hydrogen atom, a deuterium atom, a hydroxyl group, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C10 alkyl group, a phenyl group, a naphthyl group, and an anthryl group.
7. The pyrene-based compound of claim 1, wherein R10 is a hydrogen atom.
8. The pyrene-based compound of claim 1, wherein
R1 to R4 are each independently within each ring, and across rings, one selected from,
a hydrogen atom, a deuterium atom, \u2014F, \u2014Cl, \u2014Br, \u2014I, \u2014CN, a hydroxy group, a nitro group, an amino group, an amidino group, a hydrazine, a hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C10 alkyl group, and a C1-C10 alkoxy group;
a C1-C10 alkyl group, or a C1-C10 alkoxy group, substituted with at least one of a deuterium atom, \u2014F, \u2014Cl, \u2014Br, \u2014I, \u2014CN, a hydroxyl group, a nitro group, an amino group, an amidino group, a hydrazine, a hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, or a phosphoric acid group or a salt thereof;
a phenyl group, a naphthyl group, an anthryl group, a pyrenyl group, a phenanthrenyl group, a fluorenyl group, a spiro-fluorenyl group, a dibenzofuranyl group, or a dibenzothiophenyl group; and
a phenyl group, a naphthyl group, an anthryl group, a pyrenyl group, a phenanthrenyl group, a fluorenyl group, a spiro-fluorenyl group, a dibenzofuranyl group, or a dibenzothiophenyl group, substituted with at least one of a deuterium atom, \u2014F, \u2014Cl, \u2014Br, \u2014I, \u2014CN, a hydroxyl group, a nitro group, an amino group, an amidino group, a hydrazine, a hydrazone, a carboxyl group or a salt thereof, a sulfonic acid group or a salt thereof, a phosphoric acid group or a salt thereof, a C1-C10 alkyl group, a C1-C10 alkyl group substituted with at least one \u2014F, a C1-C10 alkoxy group, a C1-C10 alkoxy group substituted with at least one \u2014F, a phenyl group, a naphthyl group, or an anthryl group.
9. The pyrene-based compound of claim 1, wherein, in Formula 1, the group represented by
is selected from the groups represented by the following formulae:
10. The pyrene-based compound of claim 1, wherein, in Formula 1, the group represented by
in the represented by
is selected from the groups represented by the following formulae:
11. The pyrene-based compound of claim 1, wherein, in Formula 1, the group represented by
in the group represented by
is selected from the groups represented by the following formulae:
12. The pyrene-based compound of claim 1, wherein the pyrene-based compound is one of Compounds 1 to 9 below:
13. An organic light-emitting diode comprising: a first electrode; a second electrode disposed opposite to the first electrode; and an organic layer disposed between the first electrode and the second electrode and comprising an emission layer, the organic layer comprising at least one of the pyrene-based compounds of claim 1.
14. The organic light-emitting diode of claim 13, wherein the organic layer further comprises at least one of a hole injection layer, a hole transport layer, a functional layer having both hole injection and hole transport capabilities, a buffer layer, or an electron blocking layer between the first electrode and the emission layer, and further comprises at least one of a hole blocking layer, an electron transport layer, or a functional layer having both electron injection and electron transport capabilities between the emission layer and the second electrode.
15. The organic light-emitting diode of claim 13, wherein the pyrene-based compound is in the emission layer, and the emission layer further comprises a host.
16. The organic light-emitting diode of claim 15, wherein the host comprises at least one of an anthracene-based compound represented by Formula 400 below, or an anthracene-based compound represented by Formula 401 below:
wherein, in Formulae 400 and 401,
Ar111 and Ar112 are each independently a substituted or unsubstituted C6-C60 arylene group;
Ar113 to Ar116, and Ar122 to Ar125 are each independently a substituted or unsubstituted C1-C10 alkyl group or a substituted or unsubstituted C6-C60 aryl group;
Ar126 and Ar127 are each independently a C1-C10 alkyl group; and
g, h, i, j, k, and l are each independently an integer from 0 to 4.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a first interconnection;
a second interconnection;
a thin film transistor comprising a first electrode, a first insulating film in contact with the first electrode, a semiconductor film in contact with the first insulating film, a second insulating film in contact with the semiconductor film, and a second electrode in contact with the second insulating film,
wherein the semiconductor film comprises plural channel-formed regions and plural impurity regions each in contact with corresponding one of the respective channel-formed regions;
one of two impurity regions out of the plural impurity regions is connected to the first interconnection and the other is connected to the second interconnection; and
the first electrode and the second electrode overlap with all the impurity regions except the above-mentioned two impurity regions and with all the channel-formed regions.
2. A device according to claim 1,
wherein the dielectric constant of the first insulating film is substantially equal to that of the second insulating film, and
the film thickness of the first insulating film in an area where it overlaps with the first electrode is substantially equal to that of the second insulating film in an area where it overlaps with the second electrode.
3. A device according to claim 1,
wherein the first insulating film is flattened by chemical-mechanical polishing.
4. A device according to claim 3, wherein irregularities formed in the surface of the flattened first insulating film has an elevation difference of 5 nm or less.
5. A device according to claim 3, wherein irregularities formed in the surface of the flattened first insulating film has an elevation difference of 1 nm or less.
6. A device according to claim 3, wherein when the film thickness of the flattened first insulating film in an area where the channel-formed regions overlap with the first electrode is represented by d1 and the film thickness of the second insulating film in an area where the channel-formed regions overlap with the second electrode is represented by d2, the film thicknesses d1 and d2 satisfy the following:
|d1\u2212d2|d1\u22660.1 and |d1\u2212d2|d2\u22660.1.
7. A device according to claim 3, wherein when the film thickness of the flattened first insulating film in an area where the channel-formed regions overlap with the first electrode is represented by d1 and the film thickness of the second insulating film in an area where the channel-formed regions overlap with the second electrode is represented by d2, the film thicknesses d1 and d2 satisfy the following:
|d1\u2212d2|d1\u22660.05 and |d1\u2212d2|d2\u22660.05.
8. A device according to claim 1, wherein the semiconductor device is a microprocessor.
9. A device according to claim 1, wherein the semiconductor device is incorporated into an electronic apparatus.
10. A device according to claim 1, wherein the semiconductor device is incorporated into one selected from the group consisting of a display device, a digital still camera, a notebook-type personal computer, a mobile computer, an image reproducing device, a goggle-type display, a video camera or a portable telephone.
11. A semiconductor device comprising:
a first interconnection;
a second interconnection;
a thin film transistor comprising a first electrode, a first insulating film in contact with the first electrode, a semiconductor film in contact with the first insulating film, a second insulating film in contact with the semiconductor film, and a second electrode in contact with the second insulating film,
wherein the semiconductor film comprises plural channel-formed regions, plural first impurity regions each in contact with corresponding one of the channel-formed regions, and plural second impurity regions each in contact with corresponding one of the first impurity regions;
one of two second impurity regions out of the second impurity regions is connected to the first interconnection and the other is connected to the second interconnection; and
the first electrode and the second electrode overlap with all the second impurity regions except the above-mentioned two second impurity regions, with all the channel-formed regions, and with all the first impurity regions except the first impurity regions in contact with the above-mentioned two second impurity regions.
12. A device according to claim 11, wherein the first impurity regions have a lower impurity concentration than the second impurity regions.
13. A device according to claim 11,
wherein the dielectric constant of the first insulating film is substantially equal to that of the second insulating film, and
the film thickness of the first insulating film in an area where it overlaps with the first electrode is substantially equal to that of the second insulating film in an area where it overlaps with the second electrode.
14. A device according to claim 11,
wherein the first insulating film is flattened by chemical-mechanical polishing.
15. A device according to claim 14, wherein irregularities formed in the surface of the flattened first insulating film has an elevation difference of 5 nm or less.
16. A device according to claim 14, wherein irregularities formed in the surface of the flattened first insulating film has an elevation difference of 1 nm or less.
17. A device according to claim 14, wherein when the film thickness of the flattened first insulating film in an area where the channel-formed regions overlap with the first electrode is represented by d1 and the film thickness of the second insulating film in an area where the channel-formed regions overlap with the second electrode is represented by d2, the film thicknesses d1 and d2 satisfy the following:
|d1\u2212d2|d1\u22660.1 and |d1\u2212d2|d2\u22660.1.
18. A device according to claim 14, wherein when the film thickness of the flattened first insulating film in an area where the channel-formed regions overlap with the first electrode is represented by d1 and the film thickness of the second insulating film in an area where the channel-formed regions overlap with the second electrode is represented by d2, the film thicknesses d1 and d2 satisfy the following:
|d1\u2212d2|d1\u22660.05 and |d1\u2212d2|d2\u22660.05.
19. A device according to claim 11, wherein the semiconductor device is a microprocessor.
20. A device according to claim 11, wherein the semiconductor device is incorporated into an electronic apparatus.
21. A device according to claim 11, wherein the semiconductor device is incorporated into one selected from the group consisting of a display device, a digital still camera, a notebook-type personal computer, a mobile computer, an image reproducing device, a goggle-type display, a video camera or a portable telephone.
22. A semiconductor device comprising:
a first interconnection;
a second interconnection; and
a thin film transistor comprising a first electrode, a first insulating film in contact with the first electrode, a semiconductor film in contact with the first insulating film, a second insulating film in contact with the semiconductor film, and a second electrode in contact with the second insulating film,
wherein the semiconductor film comprises plural channel-formed regions and plural impurity regions each in contact with corresponding one of the channel-formed regions;
one of two impurity regions out of the plural impurity regions is connected to the first interconnection and the other is connected to the second interconnection;
the first electrode and the second electrode overlap with all the impurity regions except the above-mentioned two impurity regions and with all the channel-formed regions; and
the first electrode is electrically connected to the second electrode.
23. A device according to claim 22,
wherein the dielectric constant of the first insulating film is substantially equal to that of the second insulating film, and
the film thickness of the first insulating film in an area where it overlaps with the first electrode is substantially equal to that of the second insulating film in an area where it overlaps with the second electrode.
24. A device according to claim 22,
wherein the first insulating film is flattened by chemical-mechanical polishing.
25. A device according to claim 24, wherein irregularities formed in the surface of the flattened first insulating film has an elevation difference of 5 nm or less.
26. A device according to claim 24, wherein irregularities formed in the surface of the flattened first insulating film has an elevation difference of 1 nm or less.
27. A device according to claim 24, wherein when the film thickness of the flattened first insulating film in an area where the channel-formed regions overlap with the first electrode is represented by d1 and the film thickness of the second insulating film in an area where the channel-formed regions overlap with the second electrode is represented by d2, the film thicknesses d1 and d2 satisfy the following:
|d1\u2212d2|d1\u22660.1 and |d1\u2212d2|d2\u22660.1.
28. A device according to claim 24, wherein when the film thickness of the flattened first insulating film in an area where the channel-formed regions overlap with the first electrode is represented by d1 and the film thickness of the second insulating film in an area where the channel-formed regions overlap with the second electrode is represented by d2, the film thicknesses d1 and d2 satisfy the following:
|d1\u2212d2|d1\u22660.05 and |d1\u2212d2|d2\u22660.05.
29. A device according to claim 22, wherein the semiconductor device is a microprocessor.
30. A device according to claim 22, wherein the semiconductor device is incorporated into an electronic apparatus.
31. A device according to claim 22, wherein the semiconductor device is incorporated into one selected from the group consisting of a display device, a digital still camera, a notebook-type personal computer, a mobile computer, an image reproducing device, a goggle-type display, a video camera or a portable telephone.
32. A semiconductor device comprising:
a first interconnection;
a second interconnection; and
a thin film transistor comprising a first electrode, a first insulating film in contact with the first electrode, a semiconductor film in contact with the first insulating film, a second insulating film in contact with the semiconductor film, and a second electrode in contact with the second insulating film,
wherein the semiconductor film comprises plural channel-formed regions, plural first impurity regions each in contact with corresponding one of the channel-formed regions, and plural second impurity regions each in contact with corresponding one of the first impurity regions;
one of two second impurity regions out of the plural second impurity regions is connected to the first interconnection and the other is connected to the second interconnection;
the first electrode and the second electrode overlap with all the second impurity regions except the above-mentioned two second impurity regions, with all the channel-formed regions, and with all the first impurity regions except the first impurity regions in contact with the above-mentioned two second impurity regions; and
the first electrode is electrically connected to the second electrode.
33. A device according to claim 32, wherein the first impurity regions have a lower impurity concentration than the second impurity regions.
34. A device according to claim 32,
wherein the dielectric constant of the first insulating film is substantially equal to that of the second insulating film, and
the film thickness of the first insulating film in an area where it overlaps with the first electrode is substantially equal to that of the second insulating film in an area where it overlaps with the second electrode.
35. A device according to claim 32,
wherein the first insulating film is flattened by chemical-mechanical polishing.
36. A device according to claim 35, wherein irregularities formed in the surface of the flattened first insulating film has an elevation difference of 5 nm or less.
37. A device according to claim 35, wherein irregularities formed in the surface of the flattened first insulating film has an elevation difference of 1 nm or less.
38. A device according to claim 35, wherein when the film thickness of the flattened first insulating film in an area where the channel-formed regions overlap with the first electrode is represented by d1 and the film thickness of the second insulating film in an area where the channel-formed regions overlap with the second electrode is represented by d2, the film thicknesses d1 and d2 satisfy the following:
|d1\u2212d2|d1\u22660.1 and |d1\u2212d2|d2\u22660.1.
39. A device according to claim 35, wherein when the film thickness of the flattened first insulating film in an area where the channel-formed regions overlap with the first electrode is represented by d1 and the film thickness of the second insulating film in an area where the channel-formed regions overlap with the second electrode is represented by d2, the film thicknesses d1 and d2 satisfy the following:
|d1\u2212d2|d1\u22660.05 and |d1\u2212d2|d2\u22660.05.
40. A device according to claim 32, wherein the semiconductor device is a microprocessor.
41. A device according to claim 32, wherein the semiconductor device is incorporated into an electronic apparatus.
42. A device according to claim 32, wherein the semiconductor device is incorporated into one selected from the group consisting of a display device, a digital still camera, a notebook-type personal computer, a mobile computer, an image reproducing device, a goggle-type display, a video camera or a portable telephone.
43. A semiconductor device comprising:
plural pixels;
a first interconnection;
a second interconnection; and
a thin film transistor comprising a first electrode, a first insulating film in contact with the first electrode, a semiconductor film in contact with the first insulating film, a second insulating film in contact with the semiconductor film, and a second electrode in contact with the second insulating film,
wherein each of said pixels contains the first interconnection and the second interconnection and the thin film transistor,
the semiconductor film comprises plural channel-formed regions and plural impurity regions each in contact with corresponding one of the channel-formed regions;
one of two impurity regions out of the impurity regions is connected to the first interconnection and the other is connected to the second interconnection; and
the first electrode and the second electrode overlap with all the impurity regions except the above-mentioned two impurity regions and with all the channel-formed regions.
44. A device according to claim 43,
wherein the dielectric constant of the first insulating film is substantially equal to that of the second insulating film, and
the film thickness of the first insulating film in an area where it overlaps with the first electrode is substantially equal to that of the second insulating film in an area where it overlaps with the second electrode.
45. A device according to claim 43,
wherein the first insulating film is flattened by chemical-mechanical polishing.
46. A device according to claim 45, wherein irregularities formed in the surface of the flattened first insulating film has an elevation difference of 5 nm or less.
47. A device according to claim 45, wherein irregularities formed in the surface of the flattened first insulating film has an elevation difference of 1 nm or less.
48. A device according to claim 45, wherein when the film thickness of the flattened first insulating film in an area where the channel-formed regions overlap with the first electrode is represented by d1 and the film thickness of the second insulating film in an area where the channel-formed regions overlap with the second electrode is represented by d2, the film thicknesses d1 and d2 satisfy the following:
|d1\u2212d2|d1\u22660.1 and |d1\u2212d2|d2\u22660.1.
49. A device according to claim 45, wherein when the film thickness of the flattened first insulating film in an area where the channel-formed regions overlap with the first electrode is represented by d1 and the film thickness of the second insulating film in an area where the channel-formed regions overlap with the second electrode is represented by d2, the film thicknesses d1 and d2 satisfy the following:
|d1\u2212d2|d1\u22660.05 and |d1\u2212d2|d2\u22660.05.
50. A device according to claim 43, wherein the semiconductor device is a microprocessor.
51. A device according to claim 43, wherein the semiconductor device is incorporated into an electronic apparatus.
52. A device according to claim 43, wherein the semiconductor device is incorporated into one selected from the group consisting of a display device, a digital still camera, a notebook-type personal computer, a mobile computer, an image reproducing device, a goggle-type display, a video camera or a portable telephone.