1-10. (canceled)
11. A method for producing a cage rotor for an asynchronous machine, comprising:
providing a rotor body having a conductor bar segment, in which a plurality of conductor bars are provided;
producing a plurality of conductor bar slots in the conductor bar segment, wherein one of the conductor bar slots is provided for each of the conductor bars;
producing a plurality of short-circuiting ring recesses for a plurality of short-circuiting rings, wherein the conductor bar slots respectively open out into the short-circuiting ring recesses;
diecasting cage material into the conductor bar slots in situ, so that the conductor bars are formed in the conductor bar slots by the conductor bar material and the short-circuiting rings are formed in the short-circuiting ring recesses; and
creating in the conductor bar material and the rotor body material a region that has a metallurgical bond between the conductor bar material and the rotor body material at interfaces between the conductor bars and the rotor body,
wherein the region with the metallurgical bond is a diffusion region, in which the cage material and the rotor body material diffuse into one another, and, for the interdiffusion of the conductor bar material and the rotor body material, an adhesion-promoting layer is respectively provided in the conductor bar slots before the diecasting, being chosen such that the interdiffusion of the conductor bar material and the rotor body material is brought about by the diecasting, whereby the metallurgical bond is formed such that, at the interfaces, the conductor bars are retained in the conductor bar slots during the operation of the cage rotor and the short-circuiting rings are retained in the short-circuiting ring recesses.
12. The method as claimed in claim 11, wherein the adhesion-promoting layer is chosen such that the interdiffusion of the cage material and the rotor body material is intensified by hot-isostatic pressing.
13. The method as claimed in claim 11, wherein the conductor bars and the short-circuiting rings comprise copper and the adhesion-promoting layer comprises nickel.
14. The method as claimed in claim 11, wherein the conductor bars and the short-circuiting rings comprise aluminum and the adhesion-promoting layer comprises zinc.
15. A cage rotor for an asynchronous machine, comprising:
a rotor body including a conductor bar segment comprising a plurality of conductor bar slots with a plurality of conductor bars that have a rectangular cross section respectively fitted therein,
wherein the conductor bar slots are respectively formed by two slot flanks arranged parallel to one another and a slot root extending between the slot flanks, and
wherein and the cage rotor has been produced by a method as claimed in claim 11.
16. The cage rotor as claimed in claim 15, wherein each slot root is convexly formed, so that the conductor bars are rounded off respectively on their radially inner side, to form a conductor bar back.
17. The cage rotor as claimed in claim 16, wherein the cross sections of the conductor bars are formed wider in the radial direction than in the circumferential direction.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A semiconductor device in which bumps formed on a semiconductor chip and a conductor pattern formed on a substrate are connected, characterized in that
the bump is comprised of Ni and a metal film having a thickness falling within a specified range, formed over Ni;
the conductor pattern is coated with a metal film having a thickness falling within a specified range; and
the connection is formed by alloying the metal films.
2. The semiconductor device according to claim 1, wherein the metal film on the bumps is Au and the metal film on the conductor pattern is Sn.
3. The semiconductor device according to claim 1, wherein the metal film on the bumps is Sn and the metal film on the conductor pattern is Au.
4. The semiconductor device according to claim 2, wherein the metal film of Au is 0.5 to 3.0 m thick and the metal film of Sn is 0.09 to 0.19 m thick.
5. The semiconductor device according to claim 3, wherein the metal film of Au is 0.5 to 3.0 m thick and the metal film of Sn is 0.09 to 0.19 m thick.