1. An isolation structure, comprising:
a microelectronic substrate having a first surface;
a trench extending from said microelectronic substrate first surface into said microelectronic substrate, said trench having at least one sidewall and a trench opening proximate said microelectronic substrate first surface;
a chamber formed within said microelectronic substrate at an end of said trench opposing said trench opening; and
a dielectric material disposed within said chamber and said trench.
2. The isolation structure of claim 1, further including at least one sidewall spacer abutting said at least one trench sidewall.
3. The isolation structure of claim 1, wherein said dielectric material comprises silicon oxide.
4. The isolation structure of claim 1, wherein a width of said chamber is greater than a width of said trench proximate a bottom of said trench.
5. The isolation structure of claim 1, wherein said chamber includes a substantially arcuate shaped portion opposing said trench opening.
6. A method of forming an isolation structure, comprising:
providing a microelectronic substrate having a first surface;
forming a trench extending from said microelectronic substrate first surface into said microelectronic substrate, said trench having at least one sidewall and a trench opening proximate said microelectronic substrate first surface;
forming a chamber within said microelectronic substrate at an end of said trench opposing said trench opening; and
depositing a dielectric material within said chamber and said trench.
7. The method of claim 6, wherein forming said a chamber within said microelectronic substrate comprises:
depositing a trench sidewall spacer on said at least one trench sidewall and a bottom of said trench;
removing a portion of said trench sidewall spacer abutting said trench bottom to expose a portion of said microelectronic substrate; and
etching said exposed microelectronic substrate to form said chamber.
8. The method of claim 7, wherein removing a portion of said trench sidewall spacer abutting said trench bottom comprises exposing said trench sidewall spacer to an anisotropic etch.
9. The method of claim 7, wherein providing a microelectronic substrate comprises providing a silicon-containing microelectronic substrate.
10. The method of claim 9, wherein etching said exposed microelectronic substrate comprises etching said exposed microelectronic substrate with a selective isotropic silicon etch.
11. The method of claim 10, wherein etching said exposed microelectronic substrate to a selective isotropic silicon etch comprises etching said exposed microelectronic substrate with a plasma etch.
12. An isolation structure formed by a method, comprising:
providing a microelectronic substrate having a first surface;
forming a trench extending from said microelectronic substrate first surface into said microelectronic substrate, said trench having at least one sidewall and a trench opening proximate said microelectronic substrate first surface;
forming a chamber within said microelectronic substrate at an end of said trench opposing said trench opening; and
depositing a dielectric material within said chamber and said trench.
13. The isolation structure of claim 12, wherein forming said a chamber within said microelectronic substrate comprises:
depositing a trench sidewall spacer on said at least one trench sidewall and a bottom of said trench;
removing a portion of said trench sidewall spacer abutting said trench bottom to expose a portion of said microelectronic substrate; and
etching said exposed microelectronic substrate to form said chamber.
14. The isolation structure of claim 13, wherein removing a portion of said trench sidewall spacer abutting said trench bottom comprises exposing said trench sidewall spacer to an anisotropic etch.
15. The isolation structure of claim 13, wherein providing a microelectronic substrate comprises providing a silicon-containing microelectronic substrate.
16. The isolation structure of claim 15, wherein etching said exposed microelectronic substrate comprises etching said exposed microelectronic substrate with a selective isotropic silicon etch.
17. The isolation structure of claim 16, wherein etching said exposed microelectronic substrate with a selective isotropic silicon etch comprises etching said exposed microelectronic substrate with a plasma etch.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A keyboard input and output device, comprising:
a housing having a plurality of physical buttons, with each button of the physical buttons individually clickable, and wherein each button of the physical buttons comprises:
a semi-translucent surface film;
a clear film screen disposed under the surface film having a plurality of opaque glyph negatives disposed thereon, the glyph negatives comprising a first glyph negative and a second glyph negative;
a segmented LCD (liquid crystal display) layer disposed under the clear film screen configured to transmit light through the clear film screen;
an electroluminescent backlight layer disposed under the segmented LCD layer, the segmented LCD layer comprising a first segment between the backlight layer and the first glyph negative, a second segment between the backlight layer and the second glyph negative, and a third segment between the backlight layer and the perimeter of the button, wherein the first segment and the second segment can be shuttered and unshuttered so that the first glyph negative and the second glyph negative, respectively, are not lit and are lit, respectively; wherein further the third segment is shuttered and unshuttered so that the perimeter of the button is unlit and lit, respectively, wherein the perimeter of the button is lit when the button is active when a first application is being used and unlit when the button is inactive when a second application is being used.
2. The device of claim 1, wherein touching the button creates a first reaction, clicking the button creates a second reaction, and hovering over the button without contacting the button creates a third reaction.
3. The device of claim 1, wherein the housing is sized as a handheld device.
4. The device of claim 1, further comprising:
a haptic feedback mechanism included in the housing for providing haptic feedback for the plurality of buttons;
wherein the haptic feedback mechanism provides haptic feedback localized to an individual button of the plurality of buttons.
5. The device of claim 4, wherein the haptic feedback mechanism provides haptic feedback in response to a touch sensing detection by a capacitive sensing element.
6. The device of claim 1, wherein a portion of the perimeter of the button is lit while another portion of the perimeter of the button is unlit, and a portion of the perimeter of an adjacent button is also lit while another portion of the adjacent button is unlit, so that the portion of the perimeter of the button and the portion of the perimeter of the adjacent button that are lit form a perimeter around the button and the adjacent button so they appear as a single larger button, the button and the adjacent button also functioning as a single button.
7. The device of claim 6, wherein the button and the adjacent button comprise at least a part of a larger d-pad shaped button having a d-pad function.
8. The device of claim 1, wherein each of the buttons provides a gesture input functionality.
9. The device of claim 2, wherein the third reaction implements a reaction indicated by a pre-click function that specifies a reaction that results when the button is selected.
10. The device of claim 2, wherein the second reaction implements a reaction previously indicated in response to a pre-click function that specifies a reaction that results when the button is selected.
11. The device of claim 1, coupled to a display screen, wherein the button is configured to detect touch; wherein in response to the button being touched but before the button is clicked, a cue identifying the button is displayed on the display screen.
12. The device of claim 11, wherein the cue further identifies an action that will be performed when the button is clicked.