1. A buckle comprising;
a female buckle component having a housing with a roof and a floor having an edge, and a lid pivotally connected to said housing and defining a pocket with said housing, said lid having a flange adjacent said floor; and
a male buckle component having a forward end for insertion into said pocket, with a portion of said forward end extending over and beyond said floor and confronting a portion of said flange such that said portion of said flange is positioned beneath said portion of said forward end, and a lip engaged against said edge of said floor
wherein, said flange of said lid being a first flange, and said lid having a second flange spaced from said first flange, and said forward end of said male buckle component having portions thereof confronting at least portions of each said flange such that said portions of said flanges are positioned beneath said portions of said forward end.
2. The buckle of claim 1, said forward end including an arm projecting forwardly and upwardly for engagement against said roof.
3. The buckle of claim 1, said forward end including two arms projecting forwardly and upwardly for engagement against said roof.
4. The buckle of claim 1, said forward end including a base including said lip and at least one forwardly and upwardly projecting arm for engagement against said roof.
5. The buckle of claim 4, said base including a central portion having said lip and laterally projecting wings at a forward end of said base.
6. The buckle of claim 5, said floor including enlargements for engaging said wings.
7. The buckle of claim 6, further including a lanyard affixed to said lid.
8. The buckle of claim 1, including a lanyard secured to said lid.
9. The buckle of claim 1, with male buckle component surfaces and female buckle component surfaces configured and arranged to engage one against another for securing said male buckle component in said female buckle component, and a lever pivotally connected to said female buckle component and confronting a portion of said male buckle component to deflect said male buckle component for repositioning said surfaces of said male buckle component away from said surfaces of said female buckle component, for uncoupling said male buckle component from said female buckle component.
10. The buckle of claim 9, said lever having a lanyard affixed thereto for operating said lever by pulling said lanyard.
11. The buckle of claim 9, said lever including said lid.
12. The buckle of claim 11, including a lanyard secured to said lid.
13. The buckle of claim 12, said lanyard being detachably secured to said male buckle component.
14. The buckle of claim 13, said lanyard having a member and said male buckle component defining a hole for releasably receiving said member.
15. The buckle of claim 1, wherein each of said female buckle component and said male buckle component have strap receiving ends for attaching said components to strap ends, said female and male buckle components each having surfaces thereof associated with surfaces of the other thereof in engagement one against another for coupling said components to each other, and said female buckle component having a lever connected thereto, said lever underlying at least a part of said male buckle component, said lever movable against said male buckle component for deflecting said male buckle component to disengage said surfaces of said male buckle component from said surfaces of said female buckle component to uncouple said female and male buckle components from each other.
16. The buckle of claim 15, including a lanyard secured to said lever for operating said lever by pulling said lanyard.
17. The buckle of claim 16, said lanyard having a distal end releasably secured to said second component.
18. The buckle of claim 17, said second component defining a hole therein, and said lanyard having a member received in said hole.
19. A buckle comprising:
a female buckle component having a housing with a roof and a floor having an edge, and a lid pivotally connected to said housing and defining a pocket with said housing, said lid having a flange adjacent said floor;
a male buckle component having a forward end for insertion into said pocket, with a portion of said forward end extending over and beyond said floor and confronting a portion of said flange, and a lip engaged against said edge of said floor, said forward end including a base including said lip and at least one forwardly and upwardly projecting arm for engagement against said roof, said base including a central portion having said lip and laterally projecting wings at a forward end of said base, said floor including enlargements for engaging said wings; and
a lanyard affixed to said lid, said lanyard having a member near a distal end thereof for securing said lanyard to said male buckle component.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. (canceled)
2. A semiconductor light emitting device, comprising:
a foundation region having a first major surface and a second major surface on a side opposite to the first major surface, the foundation region including a nitride semiconductor;
a first semiconductor layer of a first conductivity type including a nitride semiconductor, the first semiconductor layer being stacked with the foundation region along a stacking direction;
a light emitting layer provided between the foundation region and the first semiconductor layer, the light emitting layer including a nitride semiconductor; and
a second semiconductor layer of a second conductivity type provided between the foundation region and the light emitting layer, the second conductivity type being different from the first conductivity type, the second semiconductor layer including a nitride semiconductor,
the first major surface facing the second semiconductor layer,
the foundation region having an unevenness provided on the second major surface, the unevenness having a recess, a side portion, and a protrusion,
the first major surface having an overlay-region which overlays the recess when viewed along the stacking direction,
the foundation region having a plurality of dislocations, the dislocations including first dislocations whose one ends reach the recess and second dislocations whose one ends reach the protrusion,
an another end of at least one of the second dislocations reaching the side portion without reaching the first major surface,
a number of the second dislocations reaching the first major surface being smaller than a number of the first dislocations reaching the first major surface, and
a number of the dislocations reaching the overlay-region of the first major surface being smaller than a number of the first dislocations.
3. The device according to claim 2, wherein a sum of a number of the dislocations which reach the first major surface with one ends thereof, and reach the protrusion with another ends thereof included in a unit surface area of a plane perpendicular to the stacking direction, and a number of the dislocations which reach the first major surface with one ends thereof, and reach the recess with another ends thereof included in the unit surface area is not more than \u2155 of a sum of a number of the dislocations which reach the protrusion included in the unit surface area and a number of the dislocations which reach the recess included in the unit surface area.
4. The device according to claim 2, wherein the at least one of the second dislocations reaches the side portion in a region within 500 nanometers toward the first major surface from a surface of the protrusion.
5. The device according to claim 2, wherein a thickness of the foundation region is not less than 1 micrometer and not more than 4 micrometers.
6. The device according to claim 2, wherein at least one of the protrusion and the recess is multiply provided, and the plurality of the at least one is disposed two-dimensionally in a plane perpendicular to the stacking direction.
7. The device according to claim 2, wherein an impurity concentration in the foundation region is lower than an impurity concentration in the first semiconductor layer and is lower than an impurity concentration in the second semiconductor layer.
8. The device according to claim 2, wherein the first conductivity type is a p-type, and the second conductivity type is an n-type.
9. The device according to claim 2, wherein
the first semiconductor layer includes a p-type GaN layer, and
the second semiconductor layer includes an n-type GaN layer.
10. The device according to claim 2, wherein the foundation region includes an undoped GaN.
11. The device according to claim 2, wherein a height of unevenness is not less than 500 nanometers and not more than 3 micrometers.
12. The device according to claim 2, wherein the unevenness is formed with a periodicity of not less than 500 nanometers and not more than 3 micrometers.
13. The device according to claim 2, further comprising a substrate, the foundation region being disposed between the substrate and the second semiconductor layer, the substrate having a substrate evenness facing the unevenness of the foundation region.
14. A nitride semiconductor layer, having a first major surface, a second major surface on a side opposite to the first major surface, and an unevenness provided on the second major surface,
at least one of dislocations which reach a protrusion of the unevenness with one end thereof reaching a side portion of the unevenness with another end thereof without reaching the first major surface,
a number of dislocations which reach the first major surface with one ends thereof and reach the protrusion with another ends thereof being smaller than a number of dislocations which reach the first major surface with one ends thereof and reach a recess of the unevenness, and
a number of the dislocations which reach a region of the first major surface overlaying the recess when viewed along a stacking direction from the second major surface toward the first major surface being smaller than a number of the dislocations which reach the recess.
15. The nitride semiconductor layer according to claim 14, wherein a sum of a number of the dislocations which reach the first major surface with one ends thereof, and reach the protrusion with another ends thereof included in a unit surface area of a plane perpendicular to the stacking direction, and a number of the dislocations which reach the first major surface with one ends thereof, and reach the recess with another ends thereof included in the unit surface area is not more than \u2155 of a sum of a number of the dislocations which reach the protrusion included in the unit surface area and a number of the dislocations which reach the recess included in the unit surface area.
16. The nitride semiconductor layer according to claim 14, wherein the at least one of the dislocations whose one ends reach the protrusion reaches the side portion in a region within 500 nanometers toward the first major surface from a surface of the protrusion.
17. The nitride semiconductor layer according to claim 14, wherein a thickness of the nitride semiconductor layer is not less than 1 micrometer and not more than 4 micrometers.
18. The nitride semiconductor layer according to claim 14, wherein at least one of the protrusion and the recess is multiply provided, and the plurality of the at least one is disposed two-dimensionally in a plane perpendicular to the stacking direction.
19. The nitride semiconductor layer according to claim 14, wherein the nitride semiconductor layer is formed on a substrate and the substrate has a substrate unevenness which faces the unevenness of the nitride semiconductor layer.