1. A transistor in a semiconductor device, comprising:
a first gate insulator formed of a first nitrification oxide film on a low voltage device region of a semiconductor substrate;
a first gate electrode formed on the first gate insulator;
a second gate insulator formed of a second nitrification oxide film, an oxide film and a third nitrification oxide film on a high voltage device region of the semiconductor substrate, wherein the first gate insulator and the third nitrification oxide film have a dielectric constant of 3 to 6.5;
a second gate electrode formed on the second gate insulator; and
sources and drains formed in the semiconductor substrate at both corners of the first and second gate electrode.
2. The transistor as claimed in claim 1, wherein the concentration of nitrogen in the first nitrification oxide film is 10 \u02dc15%.
3. The transistor as claimed in claim 1, wherein the concentration of nitrogen in the second nitrification oxide film or the third nitrification oxide film is 0.1 \u02dc3%.
4. The transistor as claimed in claim 1, wherein a thickness of the first nitrification oxide film is 12 \u212b\u02dc20 \u212b and a sum total thickness of the oxide film, the second nitrification oxide film and the third nitrification oxide film is 35 \u212b\u02dc55 \u212b.
5. The transistor as claimed in claim 1, wherein a plurality of silicide layers are formed on the first gate electrode and the second gate electrode.
6. The transistor as claimed in claim 5, wherein the silicide layers are formed on the semiconductor substrate and adjacent to said sources and drains thereby decreasing contact resistance of the first and second gate electrodes and the sources and drains.
7. The transistor as claimed in claim 5, wherein the silicide layers are cobalt silicide layers.
8. The transistor as claimed in claim 5, wherein the silicode layers are cobalt silicide layers.
9. The transistor as claimed in claim 8, wherein a side wall of the second gate electrode facing the side wall of the second electrode has a spacer including a buffer oxide film and a silicon nitride film.
10. A transistor in a semiconductor device, comprising:
a first gate insulator formed of a first nitrification oxide film on a low voltage device region of a semiconductor substrate;
a first gate electrode formed on the first gate insulator;
a second gate insulator formed on a high voltage device region of the semiconductor substrate, wherein the first gate insulator and a top portion of the second gate insulator have a dielectric constant of 3 to 6.5;
a second gate electrode formed on the second gate insulator; and
sources and drains formed in the semiconductor substrate at both corners of the first and second gate electrode.
11. The transistor as claimed in claim 10, wherein the second gate insulator includes a second nitrification oxide film, an oxide film and a third nitrification oxide film.
12. The transistor as claimed in claim 10, wherein a side wall of the second gate electrode has a spacer including a buffer oxide film and a silicon nitride film.
13. The transistor as claimed in claim 10, wherein a side wall of the first gate electrode facing the side wall of the second gate electrode has a spacer including a buffer oxide film and a silicon nitride film.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A mask plate, comprising a slit-like light-transparent region and lightproof regions, wherein an edge of the slit-like light-transparent region is in a curve shape.
2. The mask plate claimed as claim 1, wherein the curve shape is a zigzap shape or a wave-like shape.
3. The mask plate claimed as claim 2, wherein a distance between any adjacent protruding sections at each of edges of the slit-like light-transparent region is equal, and a distance between any adjacent concaved sections at each of edges of the slit-like light-transparent region is equal.
4. The mask plate claimed as claim 2, wherein two edges of the slit-like light-transparent region are in a zigzag shape, a shape of a protruding section is an isosceles triangle with a raised angle as its vertex angle, and a shape of a concaved section is an isosceles triangle with a recessed angle as its vertex angle; or
two edges of the slit-like light-transparent region are in a zigzag shape, a shape of a protruding section is an isosceles triangle with a raised angle as its vertex angle, and a shape of a concaved section is an isosceles trapezoid having a common waist with the isosceles triangle.
5. The mask plate claimed as claim 4, wherein the vertex angle of the isosceles triangle ranges between 15\xb0 and 75\xb0.
6. The mask plate claimed as claim 1, wherein two edges of the slit-like light-transparent region are mirror-symmetric to each other.
7. The mask plate claimed as claim 1, wherein a distance between any opposed protruding sections at two edges of the slit-like light-transparent region is equal; andor
a distance between any opposed concaved sections at two edges of the slit-like light-transparent region is equal.
8. The mask plate claimed as claim 1, wherein a distance between any opposed concaved sections at the two edges is in the range of 1 m to 3 m, and a distance between any opposed protruding sections at the two edges is 3 m.
9. The mask plate claimed as claim 1, wherein two ends of each of edges of the slit-like light-transparent region are convex or concave.
10. The mask plate claimed as claim 1, wherein one bump is disposed outside either end of each of edges of the slit-like light-transparent region, respectively.
11. The mask plate claimed as claim 9, wherein when the two ends of each of edges of the slit-like light-transparent region are concave, a shape of concaved sections is a right-angled triangle or a right-angled trapezoid.
12. The mask plate claimed as claim 9, wherein when two ends of each of edges of the slit-like light-transparent region are convex, a distance between opposed concaved sections at either end of two edges of the slit-like light-transparent region is smaller than a distance between opposed concaved sections in a middle portion of the two edges of the slit-like light-transparent region; or
a distance between any opposed concaved sections of the slit-like light-transparent region is equal, and a distance between opposed protruding sections at either end of two edges of the slit-like light-transparent region is smaller than a distance between opposed protruding sections in a middle portion of the edges of the slit-like light-transparent region.
13. The mask plate claimed as claim 3, wherein two edges of the slit-like light-transparent region are in a zigzag shape, a shape of a protruding section is an isosceles triangle with a raised angle as its vertex angle, and a shape of a concaved section is an isosceles triangle with a recessed angle as its vertex angle; or
two edges of the slit-like light-transparent region are in a zigzag shape, a shape of a protruding section is an isosceles triangle with a raised angle as its vertex angle, and a shape of a concaved section is an isosceles trapezoid having a common waist with the isosceles triangle.
14. The mask plate claimed as claim 2, wherein two edges of the slit-like light-transparent region are mirror-symmetric to each other.
15. The mask plate claimed as claim 2, wherein a distance between any opposed protruding sections at two edges of the slit-like light-transparent region is equal; andor
a distance between any opposed concaved sections at two edges of the slit-like light-transparent region is equal.
16. The mask plate claimed as claim 2, wherein a distance between any opposed concaved sections at the two edges is in the range of 1 \u03bcm to 3 \u03bcm, and a distance between any opposed protruding sections at the two edges is 3 \u03bcm.
17. The mask plate claimed as claim 2, wherein two ends of each of edges of the slit-like light-transparent region are convex or concave.
18. The mask plate claimed as claim 2, wherein one bump is disposed outside either end of each of edges of the slit-like light-transparent region, respectively.
19. The mask plate claimed as claim 3, wherein two ends of each of edges of the slit-like light-transparent region are convex or concave.
20. The mask plate claimed as claim 3, wherein one bump is disposed outside either end of each of edges of the slit-like light-transparent region, respectively.