1460763227-bc6ce60f-1603-4f7c-9ca0-84bc2e59220e

1. A 3D semiconductor device, comprising:
a first layer comprising first transistors;
a first metal layer comprising aluminum or copper overlaying said first transistors;
a second layer comprising second transistors;
wherein said second layer is overlying said first metal layer, and
wherein said second layer thickness is less than 200 nm,

a first circuit comprising at least one of said first transistors,
wherein said device comprises an Electro-Static-Discharge (\u201cESD\u201d) protection structure connected to at least one input structure,
wherein said second layer comprises a first active portion of said ESD protection structure and said first layer comprises a second active portion of said ESD protection structure, and
wherein said least one input structure is adapted to connect an input to said device from an external device.
2. A 3D semiconductor device according to claim 1, further comprising:
a heat spreader layer disposed between said first layer and said second layer, and
a heat removal path extending from said heat spreader layer to a top or the bottom surface of said device.
3. A 3D semiconductor device according to claim 1,
wherein at least one of said second transistors comprises a back-bias region and
wherein said back-bias region is constructed from an electrically conductive material with a higher than 900\xb0 C. melting temperature.
4. A 3D semiconductor device according to claim 1, further comprising:
a thermal connection path extending from said second layer to a top or bottom surface of said device
wherein a portion of said thermal connection path is designed to remove heat directly from at least one of said second transistors.
5. A 3D semiconductor device according to claim 1, further comprising:
a first power distribution grid to provide power to said first transistors; and
a second power distribution grid overlaying said second transistors,
wherein said second power distribution grid has a significantly larger current carrying capacity than said first power distribution grid.
6. A 3D semiconductor device according to claim 1, further comprising:
a power distribution network to provide power to said second transistors,
a heat removal path extending from said power distribution network to a top or bottom surface of said device.
7. A 3D semiconductor device according to claim 1, further comprising:
at least one thermally conductive and electrically non-conducting contact to said second layer to provide a heat removal path to at least one of said second transistors.
8. A 3D semiconductor device, comprising:
a first layer comprising first transistors;
a second layer comprising second transistors;
wherein said second layer is overlying said first transistors, and
wherein said second layer thickness is less than 200 nm, and
wherein said second transistors are lithographically defined with less than 10 nm alignment error to said first transistors, and
wherein said device comprises an Electro-Static-Discharge (\u201cESD\u201d) protection structure connected to at least one input structure,
wherein said second layer comprises a first active portion of said ESD protection structure and said first layer comprises a second active portion of said ESD protection structure, and
wherein said least one input structure is adapted to connect an input to said device from an external device.
9. A 3D semiconductor device according to claim 8, further comprising:
a first power distribution grid to provide power to said first transistors; and
a second power distribution grid overlaying said second transistors,
wherein said second power distribution grid has a significantly larger current carrying capacity than said first power distribution grid.
10. A 3D semiconductor device according to claim 8, further comprising:
a heat removal structure designed to remove heat from at least one of said second transistors; and
at least one through second layer via,
wherein said heat removal structure comprises said at least one through second layer via.
11. A 3D semiconductor device according to claim 8,
wherein at least one of said second transistors comprises a back-bias region and
wherein said back-bias region is constructed from an electrically conductive material with a higher than 900\xb0 C. melting temperature.
12. A 3D semiconductor device according to claim 8, further comprising:
a thermal connection path extending from said second layer to a top or bottom surface of said device
wherein a portion of said thermal connection path is in direct contact with said second layer and is designed to remove heat directly from at least one of said second transistors.
13. A 3D semiconductor device according to claim 8, further comprising:
a power distribution network to provide power to said second transistors, and
a heat removal path extending from said power distribution network to a top or bottom surface of said device.
14. A 3D semiconductor device according to claim 8, further comprising:
a heat spreader layer disposed between said first layer and said second layer, and
a heat removal path extending from said heat spreader layer to a top or the bottom surface of said device.
15. A 3D semiconductor device according to claim 8, further comprising:
at least one thermally conductive and electrically non-conducting contact to said second layer to provide a heat removal path to at least one of said second transistors.
16. A 3D semiconductor device, comprising:
a first layer comprising first transistors;
a first metal layer comprising aluminum or copper overlaying said first transistors; and
a second layer comprising second transistors;
wherein said second layer is overlying said first metal layer, and
wherein said second layer thickness is less than 200 nm, and
wherein said second transistors are lithographically defined with less than 10 nm alignment error to said first transistors, and
wherein said device comprises an Electro-Static-Discharge (\u201cESD\u201d) protection structure connected to at least one input structure,
wherein said second layer comprises a first active portion of said ESD protection structure and said first layer comprises a second active portion of said ESD protection structure, and
wherein said least one input structure is adapted to connect an input to said device from an external device.
17. A 3D semiconductor device according to claim 16, further comprising:
at least one thermally conductive and electrically non-conducting contact to said second layer to provide a heat removal path to at least one of said second transistors.
18. A 3D semiconductor device according to claim 16,
wherein at least one of said second transistors comprises a back-bias region and
wherein said back-bias region is constructed from an electrically conductive material with higher than 900\xb0 C. melting temperature.
19. A 3D semiconductor device according to claim 16, further comprising:
a thermal connection path for at least one of said second transistors extending from said second layer to a top or bottom surface of said device
wherein a portion of said thermal connection path is in direct contact with said second layer.
20. A 3D semiconductor device according to claim 16, further comprising:
a first power distribution grid to provide power to said first transistors; and
a second power distribution grid overlaying said second transistors,
wherein said second power distribution grid has a significantly larger current carrying capacity than said first power distribution grid.
21. A 3D semiconductor device according to claim 16, further comprising:
a heat spreader layer disposed between said first layer and said second layer, and
a heat removal path extending from said heat spreader layer to a top or the bottom surface of said device.
22. 3D semiconductor device according to claim 16, further comprising:
a power distribution network to provide power to said second transistors, and
a heat removal path extending from said power distribution network to a top or bottom surface of said device.
23. A 3D semiconductor device, comprising:
a first layer comprising first transistors;
a first metal layer comprising aluminum or copper overlaying said first transistors; and
a second layer comprising second transistors;
wherein said second layer is overlying said first metal layer, and
wherein said second layer thickness is less than 200 nm, and
wherein said device comprises an Electro-Static-Discharge (\u201cESD\u201d) protection structure connected to at least one input structure, and
wherein said second layer comprises a first active portion of said ESD protection structure, and said first layer comprises a second active portion of said ESD protection structure, and
wherein said least one input structure is adapted to connect an input to said device from an external device, and
wherein said first layer comprises at least one first circuit comprising said first transistors, said at least one first circuit is circumscribed by a first guard ring, and
wherein said second layer comprises at least one second circuit comprising said second transistors, said at least one second circuit is circumscribed by a second guard ring, and
wherein said second guard ring overlays said first guard ring.
24. 3D semiconductor device according to claim 23, further comprising:
a heat removal structure designed to remove heat from at least one of said second transistors; and
at least one through second layer via,
wherein said heat removal structure comprises said at least one through second layer via.
25. 3D semiconductor device according to claim 23,
wherein at least one of said second transistors comprises a back-bias region and
wherein said back-bias region is constructed from an electrically conductive material with higher than 900\xb0 C. melting temperature.
26. 3D semiconductor device according to claim 23, further comprising:
a thermal connection path extending from said second layer to a top or bottom surface of said device
wherein a portion of said thermal connection path is in direct contact with said second layer and is designed to provide a heat removal path directly from at least one of said second transistors.
27. 3D semiconductor device according to claim 23, further comprising:
a heat-spreader layer disposed between said first layer and said second layer; and
a heat removal path extending from said heat spreader layer to a top or the bottom surface of said device.
28. 3D semiconductor device according to claim 23, further comprising:
a first power distribution grid to provide power to said first transistors; and
a second power distribution grid overlaying said second transistors,
wherein said second power distribution grid has significantly larger current carrying capacity than said first power distribution grid.
29. 3D semiconductor device according to claim 23, further comprising:
a power distribution network to provide power to said second transistors, and
a heat removal path extending from said power distribution network to a top or bottom of said device.
30. 3D semiconductor device according to claim 23, further comprising:
at least one thermally conductive and electrically non-conducting contact to said second layer to provide a heat removal path to at least one of said second transistors.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A device for the paint-less dent repair of vehicles, for applying a leverage force between a rigid internal structure and an inside surface of a panel to be straightened, comprising:
a first removable tool head, including
a first base, having a first top surface and a first bottom surface,
a first work-piece contacting portion fixed to said first top surface, and
a first rod-like mounting portion having a first mounting end and a first tip support end,
a first central axis extending from the first mounting end to the first tip support end, and
a screw thread extending over at least a portion of an outer surface between the first mounting and the first tip support ends, wherein said first tip support end is fixed to said first bottom surface;

a second removable tool head, including
a second base, having a second top surface and a second bottom surface,
a second work-piece contacting portion fixed to said second top surface, and
a second rod-like mounting portion having a second mounting end and a second tip support end,
a second central axis extending from the second mounting end to the second tip support end, and
a screw thread extending over at least a portion of an outer surface between the second mounting and the second tip support ends, wherein said second tip support end is fixed to said second bottom surface;

an elongated lever having an upper surface, a lower surface opposing said upper surface,
a first aperture extending through said upper surface, and
a second aperture extending through said lower surface;
a means for attaching the first rod-like mounting portion within said first aperture, such that an angle between said first central axis and said upper surface is between 45 and 91 degrees, wherein said first work-piece contacting portion is above said upper surface; and
a means for attaching the second rod-like mounting portion within said second aperture, such that an angle between said second central axis and said lower surface is between 45 and 91 degrees, wherein said second work-piece contacting portion is below said lower surface.
2. A device as recited in claim 1 wherein said elongated lever is comprised of a malleable material, wherein a force required to plastically deform said lever is greater than a force required to straighten a panel.
3. A device as recited in claim 1, wherein said first aperture and said second aperture are threaded holes.
4. A device as recited in claim 1, wherein said first aperture and said second aperture are slots.
5. A device as recited in claim 1, wherein said first and said second work-piece contacting portions are made from a material selected from the group consisting of metal, wood, plastic, rubber, carbon fiber composite, fiberglass composite, and solder.
6. A device as recited in claim 5, wherein said first and second work-piece contacting portions comprise:
an inner core, and
an outer layer; wherein the inner core is of a harder material than the outer layer.
7. A device as recited in claim 1, wherein
a first dimension between said first bottom surface and said upper surface, and
a second dimension between said second bottom surface and said lower surface, are adjustable.
8. A device for the paint-less dent repair of vehicles, for applying a leverage force between a rigid internal structure and an inside surface of a panel to be straightened, comprising:
a first removable tool head, including
a first work-piece contacting portion, having a first bottom surface,
a first rod-like mounting portion having a first mounting end and a first tip support end,
a first central axis extending from the first mounting end to the first tip support end, and
a screw thread extending over at least a portion of an outer surface between the first mounting and the first tip support ends, wherein said first tip support end is fixed to said first bottom surface;

a second removable tool head, including
a second work-piece contacting portion, having a second bottom surface,
a second rod-like mounting portion having a second mounting end and a second tip support end,
a second central axis extending from the second mounting end to the second tip support end, and
a screw thread extending over at least a portion of an outer surface between the second mounting and the second tip support ends, wherein said second tip support end is fixed to said second bottom surface;

an elongated lever having an upper surface, a lower surface opposing said upper surface, a first aperture extending through said upper surface, and a second aperture extending through said lower surface;
a means for attaching the first rod-like mounting portion within said first aperture, such that an angle between said first central axis and said upper surface is between 45 and 91 degrees, wherein said first work-piece contacting portion is above said upper surface; and
a means for attaching the second rod-like mounting portion within said second aperture, such that an angle between said second central axis and said lower surface is between 45 and 91 degrees, wherein said second work-piece contacting portion is below said lower surface.
9. A device as recited in claim 8 wherein said elongated lever is comprised of a malleable material, wherein a force required to plastically deform said lever is greater than a force required to straighten a panel.
10. A device as recited in claim 8, wherein said first aperture and said second aperture are threaded holes.
11. A device as recited in claim 8, wherein said first aperture and said second aperture are slots.
12. A device as recited in claim 8, wherein said first and said second work-piece contacting portions are made from a material selected from the group consisting of metal, wood, plastic, rubber, carbon fiber composite, fiberglass composite, and solder.
13. A device as recited in claim 12, wherein said first and second work-piece contacting portions comprise:
an inner core, and
an outer layer; wherein the inner core is of a harder material than the outer layer.
14. A device as recited in claim 8, wherein
a first dimension between said first bottom surface and said upper surface, and
a second dimension between said second bottom surface and said lower surface, are adjustable.
15. A device for the paint-less dent repair of vehicles, for applying a leverage force between a rigid internal structure and an inside surface of a panel to be straightened, comprising:
a first removable tool head, including
a first base, having a first top surface and a first bottom surface,
a first work-piece contacting portion fixed to said first top surface, and
a first rod-like mounting portion having a first mounting end and a first tip support end,
a first central axis extending from the first mounting end to the first tip support end, and
a screw thread extending over at least a portion of an outer surface between the first mounting and the first tip support ends, wherein said first tip support end is fixed to said first bottom surface;

an elongated lever device having a proximal end and a distal end, comprising two rod-like members, of approximately equal length and oriented substantially parallel with each other;
a means for attaching the first rod-like mounting portion to said two rod-like members at a first position between said proximal end and said distal end; and
a means for attaching the second rod-like mounting portion to said two rod-like members at a second position between said proximal end and said distal end.
16. A device as recited in claim 15 wherein said elongated lever is comprised of a malleable material, wherein a force required to plastically deform said lever is greater than a force required to straighten a panel.
17. A device as recited in claim 15, wherein said first and said second work-piece contacting portions are made from a material selected from the group consisting of metal, wood, plastic, rubber, carbon fiber composite, fiberglass composite, and solder.
18. A device as recited in claim 17, wherein said first and second work-piece contacting portions comprise:
an inner core, and
an outer layer; wherein the inner core is of a harder material than the outer layer.
19. A device for the paint-less dent repair of vehicles, for applying a leverage force between a rigid internal structure and an inside surface of a panel to be straightened, comprising:
a first removable tool head, including
a first work-piece contacting portion, having a first bottom surface,
a first rod-like mounting portion having a first mounting end and a first tip support end,
a first central axis extending from the first mounting end to the first tip support end, and
a screw thread extending over at least a portion of an outer surface between the first mounting and the first tip support ends, wherein said first tip support end is fixed to said first bottom surface;