1. An apparatus comprising:
a high voltage first conduction type well formed in a semiconductor substrate;
a second conduction type body formed in the high voltage first conduction type well;
a source region formed in the second conduction type body;
a trench formed in the high voltage first conduction type well;
a first isolation oxide, an impurity doped polysilicon film, and a second isolation oxide sequentially stacked in the trench;
a drain region formed in the high voltage first conduction type well at one side of the trench; and
a polygate formed over the high voltage first conduction type well.
2. The apparatus of claim 1, wherein the polygate overlaps the second conduction type body and the second isolation oxide in the trench between the second conduction type body and the trench.
3. The apparatus of claim 1, wherein the impurity doped polysilicon film comprises an N type impurity doped polysilicon film
4. The apparatus of claim 1, wherein the source region comprises first and second conduction type impurity regions.
5. The apparatus of claim 4, wherein the first and second conduction type impurity regions are in contact with each other.
6. The apparatus of claim 1, wherein the drain region comprises a first conduction type impurity region.
7. A method comprising:
forming a second conduction type body by injecting impurities into a high voltage first conduction type well in a semiconductor substrate;
forming a trench in the high voltage first conduction type well having the second conduction type body formed therein;
sequentially forming a first isolation oxide, an impurity doped polysilicon film, and a second isolation oxide in the trench;
sequentially forming a gate oxide film and a polygate over the high voltage first conduction type well including the second isolation oxide;
forming a source region in the second conduction type body; and then forming a drain region in the high voltage first conduction type well at one side of the trench.
8. The method of claim 7, wherein sequentially forming the gate oxide film and the polygate comprises:
forming the polygate to overlap the second conduction type body and the second isolation oxide in the trench between the second conduction type body and the trench.
9. The method of claim 7, wherein the impurity doped polysilicon film comprises an N type impurity doped polysilicon film.
10. The method of claim 7, wherein the source region comprises first and second conduction type impurity regions.
11. The method of claim 10, wherein the first and second conduction type impurity regions are in contact with each other.
12. The method of claim 9, wherein the drain region comprises a first conduction type impurity region.
13. An apparatus comprising:
a well region having a first conductive type;
a body region having a second conductive type formed in the well region;
a first impurity region having a first conductive type formed in the body region;
a second impurity region having the second conductive type formed in the body region and in contact with the first impurity region;
a trench formed in the well region;
an insulating film formed over the entire bottom surface and a portion of the sidewalls of the trench;
a first device isolation film formed in the trench and contacting the insulating film;
a doped polysilicon film formed in the trench and contacting the insulating film and the first device isolation film;
a second device isolation film formed in the trench and contacting the doped polysilicon film;
a gate oxide film formed over and contacting the well region, the body region, the first, second and third impurity regions and the second device isolation film;
a polygate formed over the gate oxide film; and
a third impurity region having a first conductive type formed in the well region and spaced from the first and second impurity regions.
14. The apparatus of claim 13, wherein the first conductive type is an N type and the second conductive type is a P-type.
15. The apparatus of claim 14, wherein the first impurity region comprises a first source region, the second impurity region comprises a second source region and the third impurity region comprises a drain region.
16. The apparatus of claim 13, wherein the first impurity region comprises a first source region, the second impurity region comprises a second source region and the third impurity region comprises a drain region.
17. The apparatus of claim 13, wherein the well region comprises a high voltage well region.
18. The apparatus of claim 1, wherein the doped polysilicon film comprises an N type impurity doped polysilicon film.
19. The apparatus of claim 13, further comprising spacers formed over sidewalls of the polygate.
20. The apparatus of claim 13, wherein the polygate overlaps the body region and the second device isolation film.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An appliance, comprising:
a memory storage location storing a flag indicative of a predicted demand-response (DR) period;
a non-electrical energy source to provide temporary energy during the DR period; and
a controller reading the flag to autonomously place the appliance in an energy shedding mode during the predicted DR period.
2. The appliance of claim 1, wherein the predicted DR period occurs when the specified duty cycle comprises 60 hertz and the current AC power duty cycle comprises about 59.5 hertz or less.
3. The appliance of claim 1, comprising:
a wide area network coupled to the sensor; and
a server coupled to the wide area network, wherein for each appliance the server stores a location, a user preference, and appliance properties, and
wherein the server receives periodic operating state update and time stamp from each appliance.
4. The appliance of claim 3, wherein the controller indicates the location of the appliance using an internet protocol (IP) address.
5. The appliance of claim 3, wherein the controller indicates the location of the appliance using an address selected from one of: (consisting of) a user entered address, an address stored in another appliance, and an address determined by a positioning system.
6. The appliance of claim 1, wherein the server determines a first group of appliances in an uninterruptible phase and sends a DR override instruction to the controller(s) in the first group.
7. The appliance of claim 1, wherein the server modulates operations of appliances to avoid stressing the electrical grid.
8. The appliance of claim 1, wherein the appliance comprises a sensor compares the current AC duty cycle against the specified AC duty cycle and sets the flag indicative of a predicted demand-response (DR) period.
9. The appliance of claim 1, comprising a power sensor external to the appliance, wherein the power sensor compares the current AC duty cycle against the specified AC duty cycle and sets the flag indicative of a predicted demand-response (DR) period.
10. The appliance of claim 1, wherein the appliance is a refrigerator, further comprising:
an ice energy storage chamber providing a predetermined cold energy for a refrigerated volume for the predicted DR period; and
a fan to circulate cold air from the ice energy storage chamber inside the refrigerated volume during the predicted DR period.
11. The appliance of claim 1, wherein the appliance is a refrigerator, further comprising a phase change material coupled to the refrigerated volume to maintain the refrigerated volume at a predetermined temperature during the predicted DR period.
12. The appliance of claim 1, wherein the appliance is a refrigerator and wherein the controller modulates compressor operation to reduce power consumption during the predicted DR period.
13. The appliance of claim 1, wherein the appliance is a refrigerator, and wherein the controller precharges the refrigerator prior to the predicted DR period.
14. The appliance of claim 13, wherein the appliance is a refrigerator, and wherein the controller precharges the refrigerator based on weather or warning from an authority.
15. The appliance of claim 1, wherein the appliance is a refrigerator, comprising an ice storage to store coolth during night and used for air-conditioning during day.
16. The appliance of claim 1, wherein the appliance is a water heater, comprising:
a back-up heated energy storage chamber to store a reserve heated water to maintained a predetermined temperature output for the water heater during the predicted DR period; and
a valve to mix the reserve heated water with the water in the main water heater tank during the predicted DR period.
17. The appliance of claim 15, wherein the appliance is a water heater, further comprising a phase change material coupled to the water volume to maintain the water at a predetermined temperature during the predicted DR period.
18. The appliance of claim 15, wherein the appliance is a water heater and wherein the controller modulates heater operation to reduce power consumption during the predicted DR period.
19. The appliance of claim 15, wherein the appliance is a water heater, and wherein the controller precharges the water heater prior to the predicted DR period.
20. The appliance of claim 18, wherein the appliance is a water heater, and wherein the controller precharges the water heater based on weather or warning from an authority.
21-28. (canceled)