1. A nail polish container comprising a handheld tubular nail polish containing assembly having an end capped by an outer cap to cover a cone-shaped dispense nozzle to which a brush is coupled to and a discharge valve, wherein the containing assembly comprises an outer barrel and a refill container, the outer barrel having an end coupled to the cone-shaped dispense nozzle that has a mouth in which the brush is fit and a lower end coupled to a dispense tube seat in such a way that the dispense tube seat has an upper section of a dispense tube extends into the brush and a lower section of the dispense tube extends a proper length, the refill container having a top end forming a refilling opening inside which a tubular sleeve that is U-shaped and forms openings, the tubular sleeve having an open end receiving therein a volume-regulating valve seat of the valve to close the open end, the valve seat having a plunge tube extended bottom which is supported by a resilient piece received in an interior of the tubular sleeve to be positioned to close the open end and being coupled, in an inserted manner, with the dispense tube extending from the dispense tube seat at the time when the refill container is fit into the outer barrel, whereby in use, by depressing and retracting the refill container into the outer barrel, the dispense tube drives the plunger bar to open the open end for dispensing and when the depression is released, the resilient piece returns the plunger tube back to close the open end, preventing liquid contents from leaking, so that a stepwise dispense control for nail polish is provided to allow volume-regulated continuously-depressible dispensing operation for nail polish.
2. The nail polish container according to claim 1, wherein the dispense nozzle has a conic outlet opening that is made elliptic in shape for uniformly distributing brittles of the brush.
3. The nail polish container according to claim 1, wherein the lower section of the dispense tube extending from the dispense tube seat forms a lower end forming an opening delimited by a circumferential wall that forms a notch to serve as a passage for liquid content.
4. The nail polish container according to claim 1, wherein the openings of the tubular sleeve are defined in a lower portion thereof.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming an etching mask, the method comprising:
forming a mask layer on an object layer that is to be etched, to form an etching mask for etching the object layer;
forming a first mask layer on the mask layer, the first mask layer having a first pattern that is to be transferred onto the mask layer;
forming a second mask layer on the first mask layer, the second mask layer having a second pattern that is to be transferred onto the mask layer;
obtaining a third mask layer having the first pattern and the second pattern, by transferring the second pattern of the second mask layer onto the first mask layer; and
forming the etching mask for etching the object layer, by etching the mask layer using the third mask layer,
wherein the forming of the first mask layer comprises:
forming a first resist layer;
forming a first resist pattern by patterning the first resist layer;
forming a second resist pattern by contracting a resist portion of the first resist pattern; and
forming a first inorganic layer on the second resist pattern.
2. The method of claim 1, wherein the forming of the first mask layer further comprises: forming a first anti-reflective layer on the mask layer, and wherein in the forming of the first resist layer, the first resist layer is formed on the first anti-reflective layer.
3. The method of claim 1, wherein the first inorganic layer is formed of silicon oxide.
4. The method according to claim 1, wherein the forming of the second mask layer comprises:
forming a second resist layer;
forming a third resist pattern by patterning the second resist layer;
forming a fourth resist pattern by contracting a resist portion of the third resist pattern; and
forming a second inorganic layer on the fourth resist pattern.
5. The method of claim 4, wherein the forming of the second mask layer further comprises: forming a second anti-reflective layer on the first inorganic layer, and wherein in the forming of the second resist layer, the second resist layer is formed on the second anti-reflective layer.
6. The method of claim 4, wherein the second inorganic layer is formed of silicon oxide.
7. The method according to claim 1, wherein the mask layer is formed of titanium nitride or silicon.
8. A method of etching an object layer that is to be etched, using the etching mask fabricated using the method according to claim 1.
9. A method of fabricating a semiconductor device, comprising the etching method of claim 8.