1. A non-transitory computer readable medium encoded with program instructions which are executed by a computer to provide a method of generating internal citations for a formatted document, the instructions comprising the steps of:
a) obtaining graphic representations of each page of the formatted document,
wherein the formatted document is a patent document,
b) optically recognizing characters on each page of the formatted document, and determining the position of the characters on each page,
c) obtaining a separate and distinct text version of the formatted document,
d) parsing text from the text version, the parsed text being separate and distinct from the recognized characters,
i) correlating the recognized characters with the parsed text to determine an internal citation for each sentence, wherein the internal citation identifies the document and a citation location inside the document where the corresponding sentence is found,
f) creating a data structure storing data determined in the correlating step.
2. The computer readable medium of claim 1 wherein the citation location comprises:
i) an internal citation column number; and
ii) an internal citation line number;
3. The computer readable medium of claim 1 further comprising a step of:
using the parsed text to correct the recognized characters, yielding a corrected formatted document.
4. The computer readable medium of claim 2 further comprising a step of:
attaching the data structure to the formatted document,
wherein, when a portion of text is copied from the formatted document, a corresponding internal citation is included with the copied portion.
5. The computer readable medium of claim 4 wherein the attaching step yields a searchable annotated formatted document.
6. The computer readable medium of claim 2 wherein the data structure comprises citation start data, comprising a start column number and a start line number.
7. The computer readable medium of claim 6 wherein the data structure comprises citation end data, comprising an end column number and an end line number.
8. The computer readable medium of claim 1 wherein the data structure comprises:
a) internal citation page number data or internal citation paragraph number data and
b) internal citation sentence number data.
9. The computer readable medium of claim 1 wherein the parsing the text step further includes at least one of the group of:
a) determining new paragraphs, and
b) determining paragraph types.
10. The computer readable medium of claim 1 wherein the parsing the text step further includes determining document parts, said document parts each comprising a distinct group of pages, wherein the document parts includes at least one of the group of:
a) abstract,
b) drawing,
c) specification, and
d) claims.
11. The computer readable medium of claim 1 wherein the parsing the text step further includes determining document sections, said document sections each comprising a distinct group of paragraphs, under one or more headings, wherein the document sections includes at least one of the group of:
a) field of invention,
b) background of invention,
c) summary of invention,
d) description of drawings, and
e) description of invention.
12. The computer readable medium of claim 1 wherein the determining the position of the characters substep further includes at least one of the group of:
a) assembling lines,
b) allocating lines to columns, and
c) calculating line numbers.
13. The computer readable medium of claim 1 wherein the correlating step further includes at least one of the group of:
a) determining column numbers, and
b) determining line numbers.
14. The computer readable medium of claim 1 wherein the formatted document contains patent drawing figures, and
wherein the correlating step further includes at least one of the group of:
a) determining figure numbers in the drawing figures, and
b) determining figure item numbers in drawings figures.
15. The computer readable medium of claim 1 wherein the correlating step further includes at least one of the group of:
a) determining patent claim numbers, and
b) determining patent clause numbers.
16. The computer readable medium of claim 1 further comprising a step of:
generating a citation document using the correlation data structure.
17. The computer readable medium of claim 1 further comprising a step of:
generating a concordance report using the correlation data structure, the concordance report comprising rows comprising:
a) a word or phrase, and
b) one or more internal citations, indicating where the word or phrase occurs in the formatted document.
18. The computer readable medium of claim 1 further comprising a step of:
generating a patent corpus report using the correlation data structure, the patent corpus report comprising rows comprising:
a) prior context,
b) a word or phrase,
c) subsequent context, and
d) an internal citation.
19. The computer readable medium of claim 18 wherein the patent corpus report is based on a single word root.
20. The computer readable medium of claim 18 wherein the patent corpus report is based on one of the group of:
a) a phrase, and
b) a set of related words.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a semiconductor device comprising:
forming an active device on a substrate;
depositing a carbon-containing, low-k insulator over the active device;
exposing the insulator to a plasma;
forming a silicon halide by reacting a silanol in the insulator with a halogenating agent; and
performing a derivatizing reaction with the silicon halide.
2. The method of claim 1, wherein the low-k insulator comprises a carbon-doped oxide.
3. The method of claim 1, wherein the low-k insulator comprises porous silica.
4. The method of claim 1, wherein the low-k insulator comprises OSG.
5. The method of claim 1, wherein the halogenating agent is selected from the group consisting essentially of thionyl chloride, sulfuryl chloride and carboxydichloride.
6. The method of claim 1, wherein the halogenating agent is selected from the group consisting essentially of a chloride compound, a bromide compound, and an iodide compound, or a combination thereof.
7. The method of claim 1, wherein the derivatizing reaction includes using an organometallic compound.
8. The method of claim 7, wherein the organometallic compound is a Grignard reagent.
9. The method of claim 7, wherein the organometallic compound is lithium dialkylcopper.
10. The method of claim 7, wherein the organometailic compound is trimethyl aluminum.
11. The method of claim 7, wherein the organometallic compound is methyl lithium.
12. The method of claim 1, wherein the derivatizing reaction includes using a compound corresponding to the general formula RARBRCC(RDX):
wherein RA, RB, RC, and RD are independently hydrogen or an alkyl group; and
X is selected from the group consisting of Br, I, O-alkyl, O-fluorosulfonate, and O-triflate.
13. The method of claim 1, wherein the derivatizing reaction includes using a compound corresponding to the general formula RARBRCCX:
wherein RA, RB, and RC are independently hydrogen or an alkyl group; and
X is selected from the group consisting of Br, I, O-alkyl, O-fluorosulfonate, and O-triflate.
14. The method of claim 1, wherein the derivatizing reaction includes using a compound corresponding to the general formula RARBC\u2550CHRC, wherein RA-C are independently hydrogen or an alkyl group.
15. The method of claim 14, wherein the derivatizing reaction further includes using a Lewis acid.
16. The method of claim 1, wherein the derivatizing reaction includes using a silylation agent.
17. The method of claim 16, wherein the silylation agent corresponds to the general formula RARBRCSi(RDX):
wherein RA, RB, RC, and RD are independently hydrogen or an alkyl group; and
X is selected from the group consisting of Br, I, O-alkyl, O-fluorosulfonate, and O-triflate.
18. The method of claim 16, wherein the silylation agent corresponds to the general formula RARBRCSiX:
wherein RA, RB, and RC, are independently alkyl, aryl, or hydrogen; and
X is selected from the group consisting of Br, I, O-alkyl, O-fluorosulfonate, and O-triflate.
19. A method of fabricating a semiconductor device comprising:
depositing a carbon-containing dielectric on an active device;
halogenating the carbon-containing dielectric; and
derivatizing the carbon-containing dielectric after halogenating.
20. The method of claim 19, further comprising exposing the carbon-containing dielectric to a plasma.
21. The method of claim 20, wherein the carbon-containing dielectric further comprises an organosilicate glass.
22. The method of claim 19, wherein halogenating the carbon-containing dielectric further comprises using thionyl chloride, sulfuryl chloride, or carboxydichloride.
23. The method of claim 19, wherein derivatizing the carbon-containing dielectric after halogenating further comprises using an alkyl lithium compound or a Grignard reagent.
24. The method of claim 19, wherein derivatizing the carbon-containing dielectric after halogenating further comprises using a compound corresponding to the general formula RARBRCSi(RDX) or RARBRCC(RDX):
wherein RA, RB, RC, and RD are independently hydrogen or an alkyl group; and
X is selected from the group consisting of Br, I, O-alkyl, O-fluorosulfonate, and O-triflate.