1. A wall structure intended for being exposed to a thermal load, comprising:
at least two layers including a first layer and a second layer, said second layer being located closer to a source of the thermal load than said first layer, and said at least two layers being arranged so that heat is allowed to be conducted from the second layer to the first layer; and
each of said first and second layers are configured to carry a significant portion of a structural load, and the second layer having a higher thermal conductivity than the first layer.
2. The wall structure as recited in claim 1, further comprising:
the second layer having a lower thermal expansion than the first layer.
3. The wall structure as recited in claim 1, wherein said wall structure further comprises:
cooling channels located on a side of the second layer that is opposite to the thermal source, said cooling channels being adapted for cooling medium through-flow.
4. The wall structure as recited in claim 2, further comprising:
said cooling channels being located at a distance from the second layer.
5. The wall structure as recited in claim 3, further comprising:
said cooling channels being located at least partly within the first layer.
6. The wall structure as recited in claim 1, further comprising:
said first layer being essentially formed from a first metallic material, and the second layer essentially being formed from a second metallic material, said second metallic material having a higher thermal conductivity than the first metallic material.
7. The wall structure as recited in claim 6, further comprising:
said second layer contains ceramic particles.
8. The wall structure as recited in claim 1, further comprising:
said first layer being essentially formed from a first metallic material, and the second layer essentially being formed from a second metallic material, said second metallic material having a lower thermal expansion than the first metallic material.
9. The wall structure as recited in claim 8, further comprising:
said second layer contains ceramic particles.
10. A rocket engine comprising:
a rocket engine component having a wall structure that includes at least two layers including a first layer and a second layer, said second layer being located closer to a source of the thermal load than said first layer, and said at least two layers being arranged so that heat is allowed to be conducted from the second layer to the first layer; and
each of said first and second layers are configured to carry a significant portion of a structural load, and the second layer having a higher thermal conductivity than the first layer.
11. The rocket engine as recited in claim 10, further comprising:
the second layer having a lower thermal expansion than the first layer.
12. The rocket engine as recited in claim 10, wherein said wall structure further comprises:
cooling channels located on a side of the second layer that is opposite to the thermal source, said cooling channels being adapted for cooling medium through-flow.
13. The rocket engine as recited in claim 12, further comprising:
said cooling channels being located at a distance from the second layer.
14. The rocket engine as recited in claim 13, further comprising:
said cooling channels being located at least partly within the first layer.
15. The rocket engine as recited in claim 10, further comprising:
said first layer being essentially formed from a first metallic material, and the second layer essentially being formed from a second metallic material, said second metallic material having a higher thermal conductivity than the first metallic material.
16. The rocket engine as recited in claim 15, further comprising:
said second layer contains ceramic particles.
17. The rocket engine as recited in claim 10, further comprising:
said first layer being essentially formed from a first metallic material, and the second layer essentially being formed from a second metallic material, said second metallic material having a lower thermal expansion than the first metallic material.
18. The rocket engine as recited in claim 17, further comprising:
said second layer contains ceramic particles.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a semiconductor device, comprising steps of:
forming a first layer comprising a first material over a first substrate;
forming a second layer comprising a second material on the first layer;
forming an element layer that includes a semiconductor element over the second layer;
bonding a second substrate to the element layer using a first bonding member to sandwich the element layer between the first substrate and the second substrate;
separating the first substrate and the first layer from the second layer;
bonding a third substrate to the second layer using a second bonding member to sandwich the element layer between the second substrate and the third substrate;
separating at least the second from the element layer; and
separating at least the entire third substrate from the element layer.
2. A method according to claim 1, wherein the second substrate is separated from the element layer by dissolving the first bonding member with a solvent.
3. A method according to claim 1, wherein the second bonding member adheres to the element layer at a stronger adhesion than its adhesion to the third substrate.
4. A method according to claim 1, wherein the first bonding member is a photosensitive bonding member and the second substrate is separated from the element layer by irradiating the first bonding member with light.
5. A method according to claim 1, wherein the second bonding member is a photosensitive bonding member.
6. A method according to claim 1, wherein one of a glass substrate, a quartz substrate, and a metal substrate is used for the first substrate and the second substrate whereas the third substrate is a plastic substrate.
7. A method according to claim 1, wherein the third substrate is a plastic film with a film that contains aluminum, oxygen and nitrogen formed on its surface.
8. A method of manufacturing a semiconductor device, comprising steps of:
forming a first layer comprising a first material over a first substrate;
forming a second layer comprising a second material on the first layer;
forming an element layer that includes a semiconductor element over the second layer;
bonding a second substrate to the second layer with a first bonding member interposed therebetween so as to sandwich the element layer between the first substrate and the second substrate;
separating the first substrate and the first layer from the second layer;
bonding a third substrate to the element layer with a second bonding member interposed therebetween so as to sandwich the element layer between the second substrate and the third substrate;
separating at least the second substrate front element layer; and
separating at least the entire third substrate from the element layer.
9. A method according to claim 8, wherein the first bonding member adheres to the element layer at a stronger adhesion than its adhesion to the second substrate.
10. A method according to claim 8, wherein the second bonding member is a photosensitive bonding member and the third substrate is separated from the second bonding member by irradiating the member with light.
11. A method according to claim 8, wherein the first bonding member is a photosensitive bonding member and the second substrate is separated from the first bonding member by irradiating the first bonding member with light.
12. A method according to claim 8, wherein one of a glass substrate and a quartz substrate is used for the first substrate.
13. A method according to claim 8, wherein the second substrate is a plastic film with a film that contains aluminum, oxygen and nitrogen formed on its surface.
14. A method according to claim 8, wherein the third substrate is a plastic film with a film that contains aluminum, oxygen and nitrogen on its surface.
15. A method of manufacturing a semiconductor device, comprising:
forming a first layer comprising a first material over a first substrate;
forming a second layer comprising a second material on the first layer;
forming a peeled layer that includes a semiconductor element over the second layer;
bonding a second substrate to the peeled layer using a first bonding member to sandwich the peeled layer between the first substrate and the second substrate;
separating the first substrate and the first layer from the second layer:
bonding a third substrate to the second layer using a second bonding member to sandwich the peeled layer between the second substrate and the third substrate;
separating the second substrate from the peeled layer to form the peeled layer that uses the second bonding member as a supporter; and
separating at least the entire third substrate from the peeled layer.
16. A method according to claim 15, wherein the material of the first substrate and second substrate has a rigidity higher than the rigidity of the third substrate.
17. A method according to claim 15, wherein the second substrate is separated from the peeled layer by dissolving the first bonding member with a solvent to remove the member.
18. A method according to claim 15, wherein the first bonding member is a photosensitive bonding member and the second substrate is separated from the peeled layer by irradiating the first bonding member with light.
19. A method according to claim 1, further comprising forming a protective film on the second bonding member.
20. A method according to claim 1, further comprising forming a protective film on the second bonding member, wherein the protective film is one of silicon nitride film and a silicon oxynitride film.
21. A method of manufacturing a semiconductor device, comprising steps of:
forming a first layer comprising a first material over a first substrate;
forming a second layer comprising a second material on the first layer;
forming an element layer that includes a semiconductor element over the second layer;
bonding a second substrate to the element layer using a first bonding member to sandwich the element layer between the first substrate and the second substrate;
separating the first substrate and the first layer from the second layer;
bonding a third substrate to the second layer using a second bonding member to sandwich the element layer between the second substrate and the third substrate;
separating the element layer from the second substrate by removing the first bonding member; and
separating at least the entire third substrate from the element layer.
22. A method according to claim 21 wherein the first bonding member is attached to the separated element layer.
23. A method according to claim 21 wherein the third substrate is attached to the separated element layer with the second bonding member.
24. A method according to claim 21 further comprising a step of forming a protective film between the third substrate and the second bonding member.
25. A method according to claim 21 wherein a protective film is attached to the separated element layer with the second bonding member.
26. A method of manufacturing a semiconductor device, comprising steps of:
forming a first layer comprising a first material over a first substrate;
forming a second layer comprising a second material on the first layer;
forming an element layer that includes a semiconductor element over the second layer;
bonding a second substrate to the element layer with a first bonding member interposed therebetween so as to sandwich the element layer between the first substrate and the second substrate;
separating the first substrate and the first layer from the second layer;
bonding a third substrate to the second layer with a second bonding member interposed therebetween to sandwich the element layer between the second substrate and the third substrate;
separating at least the second substrate and the first bonding member from the element layer; and
separating at least the entire third substrate from the element layer.
27. A method according to claim 26, wherein in the material of the first substrate and second substrate has a rigidity higher than the rigidity of the third substrate.
28. A method according to claim 26, wherein the second substrate is separated from the element layer by dissolving the first bonding member with a solvent to remove the member.
29. A method according claim 26, wherein the first bonding member is a photosensitive bonding member and the second substrate separated from the peeled layer by irradiating the first bonding member with light.