1. A method of isolating structures of a semiconductor material, the method comprising:
providing a pattern of the semiconductor material comprising an elevated line;
defining two device regions in the pattern, the device regions being separated by an isolation region in the pattern located between the device regions wherein each device region comprises a region in which a FinFET is to be formed, wherein the isolation region electrically connects the device regions to each other, wherein the elevated line has a portion in each of the device regions and the isolation region; and
after providing a pattern of the semiconductor material and defining device regions in the pattern, converting all the semiconductor material of the isolation region connecting the device regions into dielectric material, such that the device regions are electrically isolated from each other.
2. The method according to claim 1, wherein the defining of device regions comprises covering the device regions with a hard mask.
3. The method according to claim 2, wherein the hard mask comprises a non-oxidizing material.
4. The method according to claim 3, wherein the hard mask comprises materials formed of nitride.
5. The method according to claim 1, wherein the converting of the semiconductor material comprises turning the semiconductor material outside the device regions into a dielectric material.
6. The method according to claim 5, wherein the converting of the semiconductor material comprises a selective oxidation step.
7. The method according to claim 1, wherein the modifying of the conductive properties comprises forming a PN junction between the device regions and the semiconductor material outside the device regions.
8. The method according to claim 1, wherein the pattern comprises a dense high topography pattern obtained by lithographic patterning comprising interferometry.
9. The method according to claim 1, wherein the pattern comprises a dense high topography pattern comprising a plurality of parallel lines.
10. The method according to claim 1, wherein the semiconductor material comprises a SoI, GoI or SiGe layer.
11. The method according to claim 1, wherein the elevated line comprises a semiconductor nanocarbon tube or a nanowire.
12. The method according to claim 1, wherein the converting of the semiconductor material comprises modifying the portion of the elevated line in the isolation region.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. Rivet comprising a screw with a handling element, a breaking groove designed to hold under a tensile stress and break under a torsional stress, a head separated from the handling element by the breaking groove, a smooth shank and a threaded portion; a sleeve comprising a collar able to receive the head, and a tubular shank comprising an internal thread intended to come into engagement with the threaded portion of the screw, characterized in that the handling element of the screw comprises a first handling portion able to guide the introduction of the rivet into a setting tool, and a second handling portion able to transmit a torque, the two handling portions being separated by a blocking portion able to limit an axial motion of the rivet in a setting tool.
2. Rivet according to claim 1, wherein the blocking portion comprises a cylindrical median portion and is connected to each handling portion by a radiused portion.
3. Rivet according to claim 1, wherein the sleeve comprises two welded elements.
4. Rivet according to claim 1, wherein the sleeve comprises a zone for bulb formation with an elastic strength less than an elastic strength of the rest of the sleeve.
5. Rivet according to claim 1, wherein the sleeve comprises at least one compression groove made on an outer portion of the tubular shank of the sleeve between the collar and the zone for formation of the bulb.
6. Rivet according to claim 1, wherein the torque is transmitted by means of splines with polygonal faces or a cylindrical face.
7. Rivet according to claim 1, wherein the first handling portion comprises a chamfer.
8. Rivet according to claim 1, wherein the sleeve comprises an end portion opposite the collar, with an outer diameter smaller than the outer diameter of the shank.
9. Setting nose for installing a rivet according to claim 1, the setting nose comprising a cylindrical body with a pierced front face, a tubular sheath arranged inside the body, a mouth piece arranged inside the sheath and defining an inner passage, characterized in that the mouth piece comprises two receiver portions for the handling element of the rivet, with a form complementary to said handling portions, at least one of the receiver portions being able to transmit a torque, said receiver portions being axially separated by a median portion comprising at least one element movable radially in the inner passage and able to limit an axial motion of the rivet.
10. Setting nose according to claim 9, wherein the torque is transmitted by means of splines, by means of polygonal faces or by a roller cage.
11. Setting nose according to claim 9, wherein the median portion comprises at least one housing in which the radially movable element is housed.
12. Setting nose according to claim 9, wherein an elastic means radially compresses the movable element towards the inside of the mouth piece.
13. Setting nose according to claim 9, wherein the mouth piece is movable axially and in rotation inside the sheath.
14. Method for installation of a rivet, using a setting nose according to claim 9 with the rivet, characterized in that the method comprises the steps of:
engagement of the setting nose with the handling element of the screw,
axial traction on the handling element and formation of a bulb on the sleeve,
screwing of the screw into the sleeve and breakage of the handling element of the screw at the level of the break groove,
characterized in that during the step of engagement of the setting nose with the handling element of the screw, a radially movable element limits an axial motion of the rivet in the setting nose.
15. Installation method according to claim 14, characterized in that during the steps of bulb formation, screwing of the screw and breakage of the handling element, the handling portions of the screw are contained in the receiver portions of the mouth piece, the blocking portion of the screw rests against the movable element, and the mouth piece is contained inside the sheath so as to prevent any radial movement of the movable element.