What is claimed is:
1. A contoured roof ventilation system comprising:
a strip having an air permeable section located adjacent to a ridge slot of a roof structure;
a stand-off clip located over the strip;
a ridge cap located over the ridge slot and at least a portion of the strip; and
at least one fastener driven through the cap, clip and strip into the roof structure such that the clip limits local deformation of the strip at the fastener.
2. The contoured roof ventilation system of claim 1, wherein the strip is formed to fit an exterior roof surface profile.
3. The contoured roof ventilation system of claim 1, wherein the strip has a depression in a contact area of each of the stand-off clips.
4. The contoured roof ventilation system of claim 1, wherein the stand-off clip is generally U-shaped.
5. The contoured roof ventilation system of claim 1, wherein the fasteners are threaded.
6. The contoured roof ventilation system of claim 1, wherein the roof structure comprises roof panels having raised sections, and the fasteners are located at the roof panel raised sections.
7. The contoured roof ventilation system of claim 1, wherein the roof structure comprises roof panels having raised sections, and the clips are located between roof panel raised sections.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of fabricating a semiconductor device comprising:
(1) forming a gate insulating film on a semiconductor substrate;
(2) forming a first polycrystalline silicon layer on the gate insulating film so that a recess is formed;
(3) forming a first insulating film on a surface of the first polycrystalline silicon layer;
(4) forming and flattening a second polycrystalline silicon layer so that the recess formed in the first polycrystalline silicon layer is buried in the second polycrystalline silicon layer;
(5) forming a second insulating film on the second polycrystalline silicon layer flattened by (4) or the first insulating film, wherein the second insulating film is made of a material differing from one for the first insulating film;
(6) forming an etched film on the second insulating film formed by (5);
(7) etching the etched film so that a surface of the second insulating film is exposed;
(8) eliminating the exposed second insulating film; and
(9) etching the first polycrystalline silicon layer.
2. The method according to claim 1, wherein the second polycrystalline silicon layer is formed so as to cover the first insulating film and then flattened in (4), and a surface of the second polycrystalline silicon layer is oxidated by a heat treatment, thereby forming the second insulating film in (5).
3. The method according to claim 1, wherein in (4), the second polycrystalline silicon layer is formed so as to cover the first insulating film and the second polycrystalline silicon layer is etched back by an RIE process so as to be flattened, and in (5), the second insulating film is formed on the second polycrystalline silicon layer flattened by (4).
4. The method according to claim 1, wherein in (4), the second polycrystalline silicon layer is formed so as to cover the first insulating film and the second polycrystalline silicon layer is etched back by an RIE process so as to be flattened, and in (5), a surface of the second polycrystalline silicon layer formed in (4) so as to cover the second insulating film is oxidated by a heat treatment, thereby forming the second insulating film in (5).
5. The method according to claim 1, wherein in (5), the second insulating film is formed so that a film thickness of the first insulating film is prevented from varying.
6. The method according to claim 1, wherein in (5), the second insulating film is formed so that a film thickness of the first insulating film is prevented from varying.
7. The method according to claim 1, wherein an ONO film is formed as the first insulating film in (3).
8. The method according to claim 2, wherein an ONO film is formed as the first insulating film in (3).
9. The method according to claim 1, wherein the first insulating film is etched under a high selective etching condition.
10. The method according to claim 1, which is applied to a method of fabricating a non-volatile memory.