1. A method of manufacturing a semiconductor device, comprising:
forming an insulating film on a semiconductor substrate or on a lower wiring layer;
depositing a hard mask on the insulating film;
forming in the hard mask an opening for a wiring pattern;
forming in the insulating film a wiring groove through the hard mask;
filling the opening in the hard mask with an organic film;
thinning the hard mask;
forming a barrier metal and a conductive film in the wiring groove; and
removing parts of the barrier metal and the conductive film which protrude from the wiring groove.
2. The method of manufacturing the semiconductor device according to claim 1, further comprising removing all of the hard mask, between the step of filling the opening in the hard mask with an organic film and the step of forming the barrier metal and the conductive film.
3. The method of manufacturing the semiconductor device according to claim 2, wherein thinning the hard mask or removing the entire hard mask is carried out by CMP.
4. The method of manufacturing the semiconductor device according to claim 2, wherein thinning the hard mask or removing the entire hard mask is carried out by etching.
5. The method of manufacturing the semiconductor device according to claim 1, wherein the hard mask contains at least one of Ti, TiN, Ta, and TaN.
6. The method of manufacturing the semiconductor device according to claim 2, wherein the hard mask contains at least one of Ti, TiN, Ta, and TaN.
7. The method of manufacturing the semiconductor device according to claim 3, wherein the hard mask contains at least one of Ti, TiN, Ta, and TaN.
8. The method of manufacturing the semiconductor device according to claim 4, wherein the hard mask contains at least one of Ti, TiN, Ta, and TaN.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A pressure sensor comprising:
a casing having an inner through hole with an opening;
a sensor chip with a gauge resistor disposed on a surface of the sensor chip;
a boss disposed on the gauge resistor;
a metallic diaphragm capable of distorting in accordance with a pressure; and
a load transmission member disposed between the metallic diaphragm and the boss and being movable in accordance with a distortion of the metallic diaphragm so that a load corresponding to the pressure applied to the metallic diaphragm is transmitted to the boss through the load transmission member, wherein
the casing accommodates the sensor chip, the boss and the load transmission member inside the inner through hole of the casing,
the opening of the casing is covered with the metallic diaphragm,
the pressure applied to the diaphragm is detected in such a manner that the load corresponding to the pressure is applied to the gauge resistor through the metallic diaphragm, the load transmission member and the boss so that a resistance of the gauge resistor is changed, and that the pressure is measured on the basis of a resistance change of the gauge resistor, and
the gauge resistor is larger than the boss, seeing from a load transmission member side, so that the boss is covered with the gauge resistor.
2. The pressure sensor according to claim 1, further comprising:
a positioning member disposed inside the casing, wherein
the positioning member has a diameter almost equal to an inner diameter of the casing,
the positioning member includes a sensor chip accommodation portion, and
the sensor chip is disposed in the sensor chip accommodation portion of the positioning member.
3. The pressure sensor according to claim 1, wherein
the boss has a circular cross section perpendicular to a center axis of the casing,
the gauge resistor has a square cross section perpendicular to the center axis of the casing, and
the boss has a diameter equal to or slightly smaller than a dimension of a side of the gauge resistor.
4. The pressure sensor according to claim 1, further comprising:
a load application member disposed between the load transmission member and the boss for transmitting the load from the load transmission member to the boss.
5. A pressure sensor comprising:
a cylindrical member;
a sensor chip with a gauge resistor disposed inside the cylindrical member;
a boss disposed on the gauge resistor and disposed inside the cylindrical member;
a metallic diaphragm capable of distorting in accordance with a pressure; and
a load transmission member disposed between the metallic diaphragm and the boss so that the diaphragm is disposed on the sensor chip through the load transmission member and the boss, and being movable in accordance with a distortion of the metallic diaphragm so that a load corresponding to the pressure applied to the metallic diaphragm is transmitted to the boss through the load transmission member, wherein
the pressure applied to the diaphragm is detected in such a manner that the load corresponding to the pressure is applied to the gauge resistor so that a resistance of the gauge resistor is changed, and that the pressure is measured on the basis of a resistance change of the gauge resistor, and
the gauge resistor has a cross section larger than that of the boss, the cross section perpendicular to a center axis of the cylindrical member.
6. The pressure sensor according to claim 5, wherein the boss is covered with the gauge resistor, seeing the gauge resistor and the boss from a load transmission member side.
7. The pressure sensor according to claim 5, further comprising:
a positioning member disposed inside the cylindrical member, wherein
the positioning member has a diameter almost equal to an inner diameter of the cylindrical member,
the positioning member includes a sensor chip accommodation portion, and
the sensor chip is disposed in the sensor chip accommodation portion of the positioning member.
8. The pressure sensor according to claim 5, wherein
the boss has a circular cross section perpendicular to the center axis of the cylindrical member,
the gauge resistor has a square cross section perpendicular to the center axis of the cylindrical member, and
the boss has a diameter equal to or slightly smaller than a dimension of a side of the gauge resistor.
9. The pressure sensor according to claim 5, further comprising:
a load application member disposed between the load transmission member and the boss for transmitting the load from the load transmission member to the boss.