1. A silicon-on-insulator metal oxide semiconductor device comprising:
an ultrathin silicon layer on a sapphire substrate;
at least one P-channel MOS transistor formed in the ultrathin silicon layer;
N-type impurity implanted within the ultrathin silicon layer and the sapphire substrate such that peak N-type impurity concentration in the sapphire substrate is at least 10 times greater than peak impurity concentration in the ultrathin silicon layer.
2. The device of claim 1,
wherein the N-type impurity implanted within the sapphire substrate has a peak concentration disposed at least 0.05 microns from a silicon-sapphire back interface.
3. The device of claim 1,
wherein the peak N-type impurity concentration within the sapphire substrate is approximately 1.0\xd71019 ionscm2.
4. A silicon-on-insulator metal oxide semiconductor device comprising:
an ultrathin silicon layer on a sapphire substrate;
at least one P-channel MOS transistor formed in the ultrathin silicon layer;
N-type impurity implanted within the sapphire substrate such that peak N-type impurity concentration within the sapphire substrate is disposed at least 0.05 microns from a silicon-sapphire back interface.
5. The device of claim 4,
wherein the N-type impurity implanted within the sapphire substrate has a peak impurity concentration disposed at least 0.10 microns from a silicon-sapphire back interface.
6. The device of claim 4,
wherein the peak N-type impurity concentration within the sapphire substrate is approximately 1.0\xd71019 ionscm2.
7. A silicon-on-insulator metal oxide semiconductor device comprising:
an ultrathin silicon layer on a sapphire substrate;
at least one P-channel MOS transistor formed in the ultrathin silicon layer;
N-type impurity implanted within the ultrathin silicon layer and the sapphire substrate such that peak N-type impurity concentration of approximately 1.0\xd71019 ionscm2in the sapphire layer, which is at least 10 times greater than peak impurity concentration in the ultrathin silicon layer and which is disposed at least 0.05 microns from a silicon-sapphire back interface.
8. A silicon-on-insulator metal oxide semiconductor device comprising:
an ultrathin silicon layer on a sapphire substrate;
at least one P-channel MOS transistor formed in the ultrathin silicon layer;
wherein the ultrathin silicon layer is characterized by a retrograde N-type dopant concentration profile in the P-channel region;
wherein the sapphire substrate is characterized by a retrograde N-type dopant concentration in the sapphire substrate opposite the P-channel region; and
wherein peak N-type dopant concentration is at least 10 times higher in the sapphire substrate than peak N-type dopant concentration in the P-channel region.
9. The device of claim 8 further including:
an interface region in which the ultrathin silicon layer adjoins the sapphire substrate;
wherein the retrograde N-type dopant concentration profile in the P-channel region the retrograde N-type dopant concentration profile in the sapphire substrate opposite the P-channel region together form a retrograde N-type dopant concentration profile across the P-channel region, the interface region and the sapphire substrate opposite the P-channel region.
10. The device of claim 8,
an interface region in which the ultrathin silicon layer adjoins the sapphire substrate;
wherein the retrograde N-type dopant concentration in the sapphire substrate increases with increasing distance from the interface region up to a peak concentration region and trails off after the peak concentration region, with increasing distance from the interface region.
11. A silicon-on-insulator metal oxide semiconductor device comprising:
an ultrathin silicon layer on a sapphire substrate;
at least one P-channel MOS transistor formed in the ultrathin silicon layer;
wherein the ultrathin silicon layer is characterized by a retrograde N-type dopant concentration profile in the P-channel region;
wherein the sapphire substrate is characterized by a retrograde N-type dopant concentration in the sapphire substrate opposite the P-channel region; and
wherein peak N-type dopant concentration is in the sapphire substrate and is disposed at least 0.05 microns from a silicon-sapphire back interface.
12. The device of claim 11 further including:
an interface region in which the ultrathin silicon layer adjoins the sapphire substrate;
wherein the retrograde N-type dopant concentration profile in the P-channel region the retrograde N-type dopant concentration profile in the sapphire substrate opposite the P-channel region together form a retrograde N-type dopant concentration profile across the P-channel region, the interface region and the sapphire substrate opposite the P-channel region.
13. The device of claim 11,
an interface region in which the ultrathin silicon layer adjoins the sapphire substrate;
wherein the retrograde N-type dopant concentration in the sapphire substrate increases with increasing distance from the interface region up to a peak concentration region and trails off after the peak concentration region, with increasing distance from the interface region.
14. The device of claim 1 further including:
an N-type threshold voltage setting implant in the P-channel region.
15. The device of claim 1 further including:
an interface region in which the ultrathin silicon layer adjoins the sapphire substrate;
wherein the retrograde N-type dopant concentration profile in the P-channel region is substantially continuous with the retrograde N-type dopant concentration profile in the sapphire substrate opposite the P-channel region so as to form a substantially continuous N-type dopant concentration profile across the P-channel region, the interface region and the sapphire substrate opposite the P-channel region;
wherein the retrograde N-type dopant concentration in the sapphire substrate increases with increasing distance from the interface region up to a peak concentration region, which is at prescribed distance from the interface region, and trails off after the peak concentration region, with increasing distance from the interface region; and
wherein the prescribed distance is selected to be far enough from the interface region that radiation-induced charge that may become trapped does not produce an inversion region near the interface region.
16. A device according to claim 1 or 4,
wherein the N-channel dopant is selected from the group consisting of phosphorous, arsenic and antimony.
17. A device according to claim 1 or 4 further including:
an N-channel device interconnected with the P-channel device to from a CMOS device.
18. The device of claim 1 or 4,
wherein respective source and drain regions of the P-channel device extend to a silicon-sapphire interface.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A system that facilitates augmenting reality, comprising:
a processor;
a memory;
an information gathering component stored in the memory and executed by the processor having a reality monitor component that gathers real-world data for at least one real-world object and a query component stored in the memory and executed by the processor that establishes a query based at least in part on context-related information for the real-world data, the query providing access to virtual-world data supplied by one or more remote sources; and
an interface component stored in the memory and executed by the processor and configured to receive at least a portion of the real-world data and the virtual-world data from the information gathering component, the interface component having a consolidation component that aggregates the received real-world and virtual-world data, the interface component establishes, in real-time, an augmented-reality experience in which at least a portion of the received real-world data is overlaid with at least a portion of the received virtual-world data.
2. The system of claim 1, the aggregated data includes virtual data related to a plurality of objects viewed by a user.
3. The system of claim 2, the aggregated data includes contextual data related to a subset of the plurality of objects.
4. The system of claim 3, the contextual data includes one of activity context data, user context data or environment context data.
5. The system of claim 1, the reality monitor component employs a sensor component to gather the context-related information.
6. The system of claim 5, the sensor component is at least one of an environmental or physiological sensor.
7. The system of claim 1, the consolidation component further comprising:
an analysis component that analyzes the real-world data and the virtual-world data; and
an aggregation component that combines the real-world data with a subset of the virtual-world data based upon contextual data.
8. The system of claim 1, further comprising a rendering component that personalizes the augmented-reality experience based upon one of user preference, user policy, or context.
9. The system of claim 8, further comprising a configuration component that organizes the augmented-reality experience based upon at least one of user preference, user policy, or user context.
10. The system of claim 8, further comprising a filter component that filters virtual data for inclusion within the augmented-reality experience based upon at least one of user preference, user policy, or user context.
11. The system of claim 1, further comprising a machine learning and reasoning component that employs at least one of a probabilistic and a statistical-based analysis that infers an action that a user desires to be automatically performed.
12. A computer-implemented method of augmenting reality, comprising:
monitoring a plurality of real-world objects;
gathering virtual information related to at least one of the plurality of real-world objects, the virtual information supplied by one or more remote sources in response to at least one query and separate from the real-world objects;
implementing a machine learning and reasoning component that employs at least one of a probabilistic and a statistical-based analysis that infers an action that a user desires to be automatically performed; and
augmenting reality via aggregating the virtual information with the at least one of the plurality of real-world objects in accordance with the inferred action.
13. The method of claim 12, further comprising rendering the augmented reality to a user based upon one of a context, policy or preference.
14. The method of claim 13, wherein the context is at least one of activity context, user context or environment context.
15. The method of claim 12, further comprising:
filtering the augmented reality based upon a context; and
rendering the filtered augmented reality.
16. A computer-executable system comprising:
means for machine learning and reasoning to infer an action that a user desires to be automatically performed;
means for monitoring contextual objects related to a user;
means for gathering virtual objects, the virtual objects provided from one or more remote sources in response to at least one query and obtained separately from the contextual objects;
means for aggregating the virtual objects with a subset of the contextual objects; and
means for rendering the aggregation to a user in accordance with the inferred action.
17. The computer-executable system of claim 16, further comprising means for gathering the virtual objects.