What is claimed is:
1. A process for making a semiconductor color image sensor cell while protecting a surface of a fixed contact, the method comprising:
defining a fixed contact by etching a passivation layer and stopping on an anti-reflecting layer so as to form a hole for an opening of the fixed contact;
forming at least one colored filter element on a region of the passivation layer, whereby the anti-reflecting layer acts as a protection layer for a surface of the fixed contact;
depositing a planarizing resin layer so as to cover the colored filter elements;
forming micro-lenses on the planarizing resin layer above the colored filter elements; and
etching the anti-reflecting layer to open the fixed contact.
2. The process according to claim 1, wherein the forming at least one colored filter elements includes forming three colored filter elements formed in succession on the passivation layer.
3. The process according to claim 2, wherein the forming at least one colored filter elements includes forming a first colored filter element of the three colored filter elements which is a green filter element formed by application of a first layer of colored resin and definition of a pattern in the first layer by exposure and photolithographic development.
4. The process according to claim 2, wherein the forming at least one colored filter elements includes forming a second colored filter element of the three colored filter elements which is a blue filter element formed by application of a second layer of colored resin and definition of a pattern in the second layer by exposure and photolithographic development.
5. The process according to claim 2, wherein the forming at least one colored filter elements includes forming a third colored filter element of the three colored filter elements which is a red filter element formed by application of a third layer of colored resin and definition of a pattern in the third layer by exposure and photolithographic development.
6. The process according to claim 1, wherein the forming micro-lenses includes deposition of a resin layer, an exposure and a photolithographic development of the resin layer so as to obtain resin fixed contacts located immediately above the colored filter elements, and baking in order to make the fixed contacts convex to form the micro-lenses.
7. The process according to claim 2, wherein the forming micro-lenses includes deposition of a resin layer, an exposure and a photolithographic development of the resin layer so as to obtain resin fixed contacts located immediately above the colored filter elements, and baking in order to make the fixed contacts convex to form the micro-lenses.
8. The process according to claim 3, wherein the forming micro-lenses includes deposition of a resin layer, an exposure and a photolithographic development of the resin layer so as to obtain resin fixed contacts located immediately above the colored filter elements, and baking in order to make the fixed contacts convex to form the micro-lenses.
9. The process according to claim 4, wherein the forming micro-lenses includes deposition of a resin layer, an exposure and a photolithographic development of the resin layer so as to obtain resin fixed contacts located immediately above the colored filter elements, and baking in order to make the fixed contacts convex to form the micro-lenses.
10. The process according to claim 5, wherein the forming micro-lenses includes deposition of a resin layer, an exposure and a photolithographic development of the resin layer so as to obtain resin fixed contacts located immediately above the colored filter elements, and baking in order to make the fixed contacts convex to form the micro-lenses.
11. The process according to claim 1, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
12. The process according to claim 2, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
13. The process according to claim 3, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
14. The process according to claim 4, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
15. The process according to claim 5, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
16. The process according to claim 10, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
17. The process according to claim 1, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.
18. The process according to claim 2, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.
19. The process according to claim 3, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.
20. The process according to claim 4, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.
21. The process according to claim 5, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.
22. The process according to claim 15, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A crystalline material with LTA structure of zeolitic nature that in its calcined and anhydrous state, and in the absence of defects in its crystalline lattice has the following empirical formula: x(M1nXO2):z ZO2:y GeO2:(1\u2212y) SiO2 where M is H+ or at least one +n charged inorganic cation; X is at least one chemical element in +3 oxidation state; Z is at least one cation in an oxidation state of +4 different from Si and Ge; wherein x has a value between 0 and 0.15, y has a value between 0 and 1, and z has a value between 0 and 0.1.
2. A crystalline material according to claim 1, wherein it has been prepared from a reaction mixture that has at least a 4-methyl-2,3,6,7,-tetrahydro-1H,5H-pyrido 3,2,1-ij quinolinium cation as an organic compound source.
3. A crystalline material according to claim 1, wherein in the state just as synthesized, the X-ray diffraction pattern, as measured by a fixed divergence slit and using the Ka-Cu radiation, is as follows:
d (\u212b) \xb1 0.4
I (I * 100I0)
12.00
mf
8.48
m
6.92
100
5.99
md
3.99
f
3.61
d
3.32
md
3.20
md
2.90
md
2.55
md
where mf is a very strong relative intensity that corresponds to 99-80% of the peak of greatest intensity; f is a strong relative intensity that corresponds to 60-80% of the peak of greatest intensity; m is a medium relative intensity that corresponds to 40-60% of the peak of greatest intensity; d is a weak relative intensity that corresponds to 20-40% of the peak of greatest intensity; md is a very weak relative intensity that corresponds to less than 20% of the peak of greatest intensity.
4. A crystalline material according to claim 1, wherein in its calcined and anhydrous state its x-ray diffraction pattern is:
d (\u212b) \xb1 0.4
I (I * 100I0)
12.00
100
8.47
f
6.91
d
5.35
md
3.98
md
3.60
md
3.31
md
3.19
md
2.90
md
2.54
md
where, f is a strong relative intensity that corresponds to 60-80% of the peak of greatest intensity; d is a weak relative intensity that corresponds to 20-40% of the peak of greatest intensity; md is a very weak relative intensity that corresponds to less than 20% of the peak of greatest intensity.
5. A crystalline material according to claim 1 wherein Z is selected from the group consisting of Ti and Sn.
6. A crystalline material according to claim 5, wherein in its calcined and anhydrous state its x-ray diffraction pattern is:
d (\u212b) \xb1 0.4
I (I * 100I0)
12.00
100
8.47
f
6.91
d
5.35
md
3.98
md
3.60
md
3.31
md
3.19
md
2.90
md
2.54
md
where mf is a very strong relative intensity that corresponds to 99-80% of the peak of greatest intensity; f is a strong relative intensity that corresponds to 60-80% of the peak of greatest intensity; m is a medium relative intensity that corresponds to 40-60% of the peak of greatest intensity; d is a weak relative intensity that corresponds to 20-40% of the peak of greatest intensity; md is a very weak relative intensity that corresponds to less than 20% of the peak of greatest intensity.
7. A procedure to synthesize the microporous crystalline material of claim 5 in which a reaction mixture contains a source of SiO2, optionally, a source of GeO2, optionally, a source of one or several tetravalent elements Z different from Si and Ge, at least one source of the organic compound R, a source of fluoride, and water, is heated at a temperature between 80 and 200\xb0 C., until crystallization is achieved, wherein the reaction mixture has a composition, in terms of molar relationships between the following ranges:
R(SiO2 + GeO2):
0.05-1.0\u2002
ZO2(SiO2 + GeO2):
\u2002\u20090-1.0
GeO2(SiO2 + GeO2):
\u2002\u20090-1.0
F(SiO2 + GeO2):
0.1-3.0
H2O(SiO2 + GeO2):
\u2002\u20091-50.
8. A procedure according to claim 7 wherein Z is Ti or Sn.
9. A procedure according to claim 7 wherein R is 4-methyl-2,3,6,7,-tetrahydro -1H,5H-pyrido 3,2,1-ij quinolinium cation or a mixture of said cation with the tetramethylammonium cation or with ethylenglycol.
10. A procedure according to claim 7 wherein the temperature is between 100\xb0 and 200\xb0 C.
11. A crystalline material according to claim 1, wherein in the state just as synthesized, the X-ray diffraction pattern, as measured by a fixed divergence slit and using the Ka-Cu radiation, is as follows:
d (\u212b) \xb1 0.4
I (I * 100I0)
12.00
mf
8.48
m
6.92
100
5.99
md
3.99
f
3.61
d
3.32
md
3.20
md
2.90
md
2.55
md
where mf is a very strong relative intensity that corresponds to 99-80% of the peak of greatest intensity; f is a strong relative intensity that corresponds to 60-80% of the peak of greatest intensity; d is a weak relative intensity that corresponds to 20-40% of the peak of greatest intensity; md is a very weak relative intensity that corresponds to less than 20% of the peak of greatest intensity.
12. A procedure to synthesize the microporous crystalline material of claim 1, in which a reaction mixture that contains a source of SiO2, optionally, a source of GeO2, optionally, a source of one or more of several trivalent elements X, optionally, a source of +n inorganic cations M, at least one source of organic compound R, a source of fluoride, and water, is heated at a temperature between 80 and 200\xb0 C., until crystallization is achieved, wherein the reaction mixture has a composition, in terms of molar relationships between the following ranges:
R(SiO2 + GeO2):
0.05-1.0\u2002
M1nOH(SiO2 + GeO2):
\u2002\u20090-1.0
X2O3(SiO2 + GeO2):
\u2002\u20090-1.0
GeO2(SiO2 + GeO2):
\u2002\u20090-1.0
F(SiO2 + GeO2):
0.1-3.0
H2O(SiO2 + GeO2):
\u2002\u20091-50.
13. A procedure according to claim 12, wherein that a quantity of crystalline material is added to the reaction mixture as crystallization promoter, said quantity being up to 20% by weight in relation to the total of inorganic oxides added.
14. A procedure according to claim 12 wherein X is selected from the group consisting of Al, B, Ga and Fe.
15. A procedure according to claim 12 wherein R is 4-methyl-2,3,6,7,-tetrahydro -1H,5H-pyrido 3,2,1-ij quinolinium cation or a mixture of said cation with tetramethylammonium cation or with ethylenglycol.
16. A procedure according to claim 15, wherein the 4-methyl-2,3,6,7, -tetrahydro-1H,5 H-pyrido 3,2,1 -ij quinolinium and the tetramethylammonium organic cations are added as hydroxides or as salts, or as a mixture of both.
17. A procedure according to claim 16 wherein the organic cations are added as a halide.
18. A procedure according to claim 12 wherein the temperature is between 100\xb0 and 200\xb0 C.
19. A method to convert feedings formed by organic compounds in the presence of a catalyst comprising adding a catalytically active form of the material described in claim 1 as a catalyst.
20. A method to separate gases in the presence of an adsorbent comprising adding a catalytically active form of the material described in claim 1 as an adsorbent.
21. An adsorbent for gases and vapours comprising an active form of the material described in claim 1.
22. A crystalline material according to claim 1 wherein X is selected from the group consisting of Al, B, Ga and Fe.
23. A crystalline material according to claim 1 wherein y has a value lower than 0.75.
24. A crystalline material according to claim 1 wherein z has a value lower than 0.05.