What is claimed is:
1. A method of installing a latch profile in a tubular string in a subterranean well, the method comprising the steps of:
positioning the tubular string in the subterranean well; and
then forming the latch profile in the tubular string.
2. The method according to claim 1, wherein the forming step further comprises conveying the latch profile into the tubular string and then outwardly expanding the latch profile in the tubular string.
3. The method according to claim 2, wherein the expanding step further comprises deforming the tubular string, thereby recessing the latch profile into the tubular string.
4. The method according to claim 3, wherein the deforming step further comprises plastically deforming the tubular string so that the tubular string is expanded outward.
5. The method according to claim 2, wherein the conveying step further comprises conveying the latch profile internally formed on an expandable structure.
6. The method according to claim 5, wherein the expandable structure is circumferentially continuous, and wherein the outwardly expanding step further comprises circumferentially stretching the expandable structure, thereby radially enlarging the expandable structure.
7. The method according to claim 5, wherein the expandable structure includes multiple circumferentially distributed segments, and wherein the outwardly expanding step further comprises displacing each of the segments radially outward.
8. The method according to claim 5, wherein the outwardly expanding step further comprises displacing a wedge structure through the expandable structure.
9. The method according to claim 5, further comprising the step of bonding the expandable structure to the tubular string.
10. The method according to claim 9, wherein the bonding step further comprises adhesively securing the expandable structure to the tubular string.
11. The method according to claim 9, wherein the conveying step further comprises conveying the expandable structure into the tubular string with a bonding agent carried on the expandable structure.
12. The method according to claim 11, wherein in the conveying step, the bonding agent is an adhesive.
13. The method according to claim 11, wherein in the conveying step, the bonding agent is a sealant.
14. The method according to claim 1, further comprising the step of conveying a whipstock assembly into the tubular string prior to the forming step.
15. The method according to claim 14, wherein the conveying step further comprises conveying with the whipstock assembly an apparatus for forming the latch profile in the tubular string.
16. The method according to claim 15, wherein the conveying step further comprises conveying the whipstock assembly attached to the apparatus.
17. The method according to claim 15, further comprising the step of engaging the whipstock assembly with the latch profile, thereby securing the whipstock assembly against displacement relative to the tubular string, after the forming step.
18. The method according to claim 17, wherein the conveying, forming and engaging steps are performed in a single trip into the tubular string.
19. The method according to claim 1, wherein the forming step further comprises forming the latch profile so that a minimum internal dimension of the profile is substantially equal to or greater than a minimum internal diameter of the tubular string.
20. The method according to claim 1, further comprising the step of cementing the tubular string in the well prior to the forming step.
21. The method according to claim 1, wherein the forming step further comprises forming at least one recess on an interior surface of the tubular string.
22. The method according to claim 21, wherein the forming step further comprises forming the recess so that the recess is circumferentially continuous.
23. The method according to claim 21, wherein the forming step further comprises forming multiple ones of the recesses.
24. The method according to claim 23, wherein the forming step further comprises spacing apart the recesses in a predetermined pattern, thereby facilitating radial orientation of an apparatus engaged with the recesses after the forming step.
25. The method according to claim 1, wherein the forming step further comprises piercing the tubular string, thereby forming at least one opening in a sidewall of the tubular string.
26. The method according to claim 25, wherein the forming step further comprises forming multiple ones of the openings.
27. The method according to claim 26, wherein the forming step further comprises spacing apart the openings in a predetermined pattern, thereby facilitating radial orientation of an apparatus engaged with the openings after the forming step.
28. The method according to claim 25, further comprising the step of injecting a sealant into the opening, thereby preventing fluid flow through the tubular string sidewall via the opening.
29. A method of installing a latch profile in a tubular string in a subterranean well, the method comprising the steps of:
cementing the tubular string in the subterranean well; and
then plastically deforming the tubular string, thereby installing the latch profile in the tubular string.
30. The method according to claim 29, wherein the deforming step further comprises positioning an expandable latch structure within the tubular string, the latch structure having the latch profile formed thereon, and then outwardly expanding the latch structure.
31. The method according to claim 30, wherein the expanding step further comprises outwardly displacing a sidewall of the tubular string, thereby recessing the latch structure into the sidewall.
32. The method according to claim 30, wherein the expanding step further comprises displacing a wedge through the latch structure, thereby outwardly displacing the latch structure.
33. The method according to claim 30, wherein in the positioning step, the latch profile formed on the latch structure is an orienting profile, so that an apparatus engaged with the profile after the deforming step is radially oriented relative to the tubular string.
34. The method according to claim 29, wherein the deforming step further comprises forming recesses in a predetermined pattern on an interior surface of the tubular string, the pattern of recesses making up the latch profile.
35. The method according to claim 34, wherein the forming step further comprises circumferentially continuously forming at least one of the recesses.
36. The method according to claim 34, further comprising the step of engaging an apparatus with the recesses after the forming step, the predetermined pattern thereby radially orienting the apparatus relative to the tubular string.
37. The method according to claim 29, further comprising the step of engaging an apparatus with the latch profile after the deforming step, thereby securing the apparatus relative to the tubular string, the deforming and engaging steps being performed in a single trip into the tubular string.
38. The method according to claim 29, further comprising the step of bonding the latch profile to the tubular string.
39. The method according to claim 38, further comprising the step of forming a seal between the tubular string and a latch structure on which the latch profile is formed.
40. A method of installing a latch profile in a tubular string in a subterranean well, the method comprising the steps of:
positioning the tubular string in the subterranean well; and
then cutting into an interior surface of the tubular string, thereby forming a predetermined pattern of recesses on the interior surface, the pattern of recesses making up the latch profile.
41. The method according to claim 40, further comprising the step of engaging an apparatus with the recesses after the cutting step, the predetermined pattern thereby radially orienting the apparatus relative to the tubular string.
42. The method according to claim 41, wherein the cutting and engaging steps are performed in a single trip into the tubular string.
43. The method according to claim 40, wherein the cutting step further comprises extending the recesses through a sidewall of the tubular string, thereby forming openings in the sidewall.
44. The method according to claim 43, further comprising the step of injecting sealant into the openings, thereby preventing fluid flow through the openings.
45. The method according to claim 40, wherein the cutting step is performed by drilling into the interior surface.
46. The method according to claim 40, wherein the cutting step is performed by milling the interior surface.
47. A method of installing a latch profile in a tubular string in a subterranean well, the method comprising the steps of:
positioning the tubular string in the subterranean well;
then conveying a latch structure into the tubular string; and
then expanding the latch structure outward in the tubular string.
48. The method according to claim 47, wherein the expanding step further comprises expanding the latch structure outward into contact with the tubular string.
49. The method according to claim 47, wherein the expanding step further comprises forming a seal between the latch structure and the tubular string.
50. The method according to claim 49, wherein the seal forming step further comprises positioning a bonding agent between the latch structure and the tubular string.
51. The method according to claim 49, wherein in the seal forming step, the seal is a metal to metal seal.
52. The method according to claim 47, wherein the expanding step further comprises securing the latch structure relative to the tubular string.
53. The method according to claim 52, wherein the securing step further comprises positioning a bonding agent between the latch structure and the tubular string.
54. The method according to claim 52, wherein the securing step further comprises producing metal to metal contact between the latch structure and the tubular string.
55. The method according to claim 52, wherein the securing step further comprises axially and rotationally securing the latch structure relative to the tubular string.
56. The method according to claim 47, further comprising the step of orienting the latch structure rotationally relative to the tubular string prior to the expanding step.
57. The method according to claim 56, wherein the orienting step further comprises rotationally orienting a muleshoe of the latch structure relative to the tubular string.
58. The method according to claim 56, wherein the orienting step further comprises rotationally orienting a laterally inclined surface of the latch structure relative to the tubular string.
59. The method according to claim 47, wherein the expanding step further comprises displacing a wedge through the latch structure.
60. The method according to claim 47, wherein the expanding step further comprises deforming the tubular string.
61. The method according to claim 60, wherein the deforming step further comprises plastically deforming the tubular string so that the tubular string is expanded outward.
62. The method according to claim 47, wherein the latch structure is circumferentially continuous in the expanding step.
63. The method according to claim 62, wherein the expanding step further comprises circumferentially stretching the latch structure.
64. The method according to claim 47, wherein the latch structure is made up of multiple circumferentially distributed segments in the expanding step.
65. The method according to claim 64, wherein the expanding step further comprises displacing each of the segments radially outward.
66. The method according to claim 47, wherein the expanding step further comprises expanding the latch structure so that a minimum internal dimension of the latch structure is substantially equal to or greater than a minimum internal diameter of the tubular string.
67. The method according to claim 47, wherein the expanding step further comprises expanding the latch structure so that a minimum internal dimension of the latch structure is substantially equal to or less than a minimum internal diameter of the tubular string.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming a film on an object to be processed and held in a processing vessel, comprising:
heating said object in said processing vessel while introducing an inert gas into said processing vessel;
interrupting supplying of said inert gas and evacuating said processing vessel to a vacuum state;
supplying a first source gas into said processing vessel so as to expose said object to said first source gas such that adsorption of said first source gas to said object occurs under a saturating condition in which an adsorption rate of said first source gas to said object is saturated;
interrupting supplying of said first source gas to said processing vessel and evacuating said processing vessel to a vacuum state;
supplying a second source gas into said processing vessel so as to expose said object, on which said first source gas is adsorbed, to said second source gas such that adsorption of said second source gas to said object occurs under a saturating condition in which an adsorption rate of said second source gas to said object is saturated;
interrupting supplying of said second source gas and evacuating said processing vessel to a vacuum state;
causing a reaction between said first source gas and said second source gas adsorbed on said object to form a film; and
repeating said supplying said first source gas, interrupting said supplying of said first source gas, evacuating said processing vessel to a vacuum state, supplying said second source gas, interrupting supplying of said second source gas, and evacuating said processing vessel to a vacuum state a plurality of times to form said film.
2. The method as claimed in claim 1, further comprising:
removing a residual gas from said processing vessel by one of a vacuum evacuation process and by introducing an inert gas after interrupting supplying of said first source gas and before supplying said second source gas.
3. The method as claimed in claim 1, wherein said first source gas comprises a gas containing a metal and wherein said second source gas comprises a reducing gas.
4. The method as claimed in claim 3, wherein said gas containing said metal and said reducing gas are supplied together with an inert carrier gas.
5. The method as claimed in claim 1, wherein said first source gas is supplied by controlling a product of a partial pressure of said first source gas and a duration of supply of said first source gas, and wherein said second source gas is supplied by controlling a product of a partial pressure of said second source gas and a duration of supply of said second source gas.
6. The method as claimed in claim 1, wherein said film is formed with a thickness greater than or equal to 0.23 nm in each cycle.
7. A method of forming a film on an object to be processed and held in a processing vessel, comprising:
heating said object in said processing vessel while introducing an inert gas into said processing vessel;
interrupting supplying of said inert gas and evacuating said processing vessel to a vacuum state;
supplying a first source gas into said processing vessel so as to expose said object to said first source gas such that adsorption of said first source gas to said object occurs under a saturating condition in which an adsorption rate of said first source gas to said object is saturated;
interrupting supplying of said first source gas and evacuating said processing vessel to a vacuum state;
supplying a second source gas into said processing vessel so as to expose said object, on which said first source gas is adsorbed, to said second source gas such that adsorption of said second source gas to said object occurs under a saturating condition in which an adsorption rate of said second source gas to said object is saturated;
interrupting supplying of said second source gas and evacuating said processing vessel to a vacuum state;
causing a reaction between said first source gas and said second source gas adsorbed on said object to form a first film;
repeating said supplying said first source gas, interrupting said supplying of said first source gas, evacuating said processing vessel to a vacuum, supplying said second source gas, interrupting supplying of said second source of gas, and evacuating said processing vessel to a vacuum state a plurality of times to form a second film; and
forming a third film on said second film by supplying a gas including said first source gas to said processing vessel.
8. The method as claimed in claim 7, further comprising:
removing a residual gas from said processing vessel by one of a vacuum evacuation process or by introducing an inert gas after interrupting supplying of said first source gas and before starting supplying said second source gas.
9. The method as claimed in claim 7, wherein said first source gas comprises a gas containing a metal and wherein said second source gas comprises a reducing gas.
10. The method as claimed in claim 9, wherein said gas containing said metal and said reducing gas are supplied together with an inert gas.
11. The method as claimed in claim 7, wherein said first source gas is supplied by controlling a product of a partial pressure of said first source gas and a duration of supply of said first source gas, and wherein said second source gas is supplied by controlling a product of a partial pressure of said second source gas and a duration of supply of said second source gas.
12. The method as claimed in claim 7, wherein said first film functions as a nucleation layer.
13. A method of forming a film on an object to be processed and held in a processing vessel, comprising:
supplying a first source gas into said processing vessel so as to expose said object to said first source gas while controlling a product of a partial pressure of said first source gas and a duration in which said object is exposed to said first source gas, such that adsorption of said first source gas to said object occurs under a saturating condition in which an adsorption rate of said first source gas to said object is saturated;
interrupting supplying of said first source gas to said processing vessel and supplying a second source gas into said processing vessel so as to expose said object, on which said first source gas is adsorbed, to said second source gas while controlling a product of a partial pressure of said second source gas and a duration in which said object is exposed to said second source gas, such that adsorption of said second source gas to said object occurs under a saturating condition in which an adsorption rate of said second source gas to said object is saturated;
causing a reaction between said first source gas and said second source gas adsorbed on said object to form a film; and
repeating a plurality of times said supplying said first source gas, interrupting said supplying of said first source gas, supplying said second source gas and causing the reaction between said first source gas and said second source gas.
14. The method as claimed in claim 13, further comprising:
removing a residual gas from said processing vessel by one of a vacuum evacuation process and by introducing an inert gas after interrupting supplying of said first source gas and before starting supplying said second source gas.
15. The method as claimed in claim 13, wherein said first source gas comprises a gas containing a metal and wherein said second source gas comprises a reducing gas.
16. The method as claimed in claim 15, wherein said gas containing said metal and said reducing gas are supplied together with an inert gas.
17. A method of fanning a film on an object to be processed and held in a processing vessel, comprising the steps of:
supplying a first source gas into said processing vessel so as to expose said object to said first source gas while controlling a product of a partial pressure of said first source gas and a duration in which said object is exposed to said first source gas, such that adsorption of said first source gas to said object occurs under a saturating condition in which an adsorption rate of said first source gas to said object is saturated;
interrupting supplying of said first source gas to said processing vessel and supplying a second source gas into said processing vessel so as to expose said object, on which said first source gas is adsorbed, to said second source gas while controlling a product of a partial pressure of said second source gas and a duration in which said object is exposed to said second source gas, such adsorption of said second source gas to said object occurs under a saturating condition in an adsorption rate of said second source gas to said object is saturated;
causing a reaction between said first source gas and said second source gas adsorbed on said object to form a first film;
repeating a plurality of times said supplying said first source gas, interrupting said supplying of said first source gas, supplying said second source gas and causing the reaction between said first source gas and said second source gas, to form a second film on said object as a nucleation layer; and
forming a third film on said second film by supplying a gas including said first source gas to said processing vessel.
18. The method as claimed in claim 17, further comprising:
removing a residual gas from said processing vessel by one of a vacuum evacuation process or by introducing an inert gas after interrupting supplying of said first source gas and before starting supplying said second source gas.
19. The method as claimed in claim 17, wherein said first source gas comprises a gas containing a metal and wherein said second source gas comprises a reducing gas.
20. The method as claimed in claim 19, wherein said gas containing said metal and said reducing gas are supplied together with an inert carrier gas.
21. A method for forming a film on an object to be processed and held in a processing vessel, comprising:
supplying a WF6 gas into said processing vessel so as to expose said object to said WF6 gas while controlling a product of a partial pressure of said WF6 gas and a duration in which said object is exposed to said WF6, such that adsorption of said WF6 gas to said object occurs under a saturating condition in which an adsorption rate of said WF6 gas to said object is saturated;
interrupting supplying of said WF6 gas to said processing vessel and evacuating said WF6 gas from said processing vessel;
supplying a SiH4 gas into said processing vessel so as to expose said object, on which said WF6 gas is adsorbed, to said SiH4 gas while controlling a product of partial pressure of said SiH4 gas and a duration in which said object is exposed to said SiH4 gas, such that adsorption of said SiH4 gas to said object occurs under a saturating condition in which an adsorption rate of said SiH4 gas to said object is saturated;
interrupting supplying of said SiH4 gas to said processing vessel and evacuating said SiH4 gas from said processing vessel;
causing a reaction between said WF6 gas and said SiH4 gas adsorbed on said object to form a first W film;
repeating a plurality of times said supplying said WF6 gas, interrupting said supplying of said WF6 gas and evacuating said WF6 gas from said processing vessel, supplying said SiH4 gas, interrupting supplying of said SiH4 gas to said processing vessel and evacuating said SiH4 gas from said processing vessel and causing the reaction between the WF6 and the SiH4 gas to form a second W film on said object as a W nucleation layer; and
forming a metal layer of W on said W nucleation layer by supplying a gas containing WF6 and H2 to said processing vessel.
22. The method as claimed in claim 21, further comprising:
forming a TiN film underneath said W nucleation layer by an organic Ti compound.
23. The method as claimed in claim 21, wherein said W nucleation layer has a thickness ranging between 0.2 nm and 20.0 nm.
24. The method as claimed in claim 21, wherein said WF6 gas is supplied by setting said product of said partial pressure of said WF6 gas and said duration in which said object is exposed to said WF6 gas in a range between 133 Pa.sec and 10 kPa.sec.
25. The method as claimed in claim 24, wherein said SiH4 gas is supplied by setting said product of said partial pressure of said SiH4 gas and said duration in which said object is exposed to said SiH4 gas in a range between 66 Pa.sec and 10 kPa.sec.
26. The method as claimed in claim 21, further comprising:
prior to said supplying said WF6 gas into said processing vessel, preprocessing said object by exposing said object to said SiH4 gas.
27. The method as claimed in claim 26, wherein in said preprocessing of said object, said SiH4 gas is supplied by setting said product of said partial pressure of said SiH4 gas and said duration in which said object is exposed to said SiH4 gas in a range between 6 kPa.sec and 25 kPa.sec.
28. The method as claimed in claim 21, wherein said supplying said WF6 gas into said processing vessel, interrupting supplying of said WF6 gas to said processing vessel and evacuating said WF6 gas from said processing vessel, supplying said SiH4 gas into said processing vessel, interrupting supplying of said SiH4 gas to said processing vessel and evacuating said SiH4 gas from said processing vessel, causing the reaction between said WF6 gas and said SiH4 gas adsorbed on said object, repeating a plurality of times said supplying the WF6 gas, interrupting said supplying of said WF6 gas and evacuating said WF6 gas from said processing vessel, supplying said SiH4 gas, interrupting supplying of said SiH4 gas to said processing vessel and evacuating said SiH4 gas from said processing vessel and causing the reaction between said WF6 gas and said SiH4 gas to form a second W film on said object as a W nucleation layer, are conducted at a temperature in a range between 150\xb0 C. and 500\xb0 C.
29. The method as claimed in claim 28, wherein said supplying said WF6 gas into said processing vessel, interrupting supplying of said WF6 gas to said processing vessel and evacuating said WF6 gas from said processing vessel, supplying said SiH4 gas into said processing vessel, interrupting supplying of said SiH4 gas to said processing vessel and evacuating said SiH4 gas from said processing vessel, causing the reaction between said WF6 gas and said SiH4 gas adsorbed on said object, are conducted at a substrate temperature in a range between 150\xb0 C. and 350\xb0 C.
30. The method as claimed in claim 29, wherein said SiH4 gas is supplied by setting said product of said partial pressure of said SiH4 gas and said duration in which said object is exposed to said SiH4 gas in a range between 66 Pa.sec and 10 kPa.sec.
31. The method as claimed in claim 30, wherein said WF6 gas is supplied by setting said product of said partial pressure of said SiH4 gas and said duration in which said object is exposed to said WF6 gas in a range between 133 Pa and 10 kPa.
32. The method as claimed in claim 28, wherein said supplying said WF6 gas into said processing vessel, interrupting supplying of said WF6 gas to said processing vessel and evacuating said WF6 gas from said processing vessel, supplying the SiH4 gas into said processing vessel, interrupting supplying of said SiH4 gas to said processing vessel and evacuating said SiH4 gas from said processing vessel, causing the reaction between said WF6 gas and said SiH4 gas adsorbed on said object, repeating a plurality of times said supplying said WF6 gas, interrupting said supplying of said WF6 gas and evacuating said WF6 gas from said processing vessel, supplying said SiH4 gas, interrupting supplying of said SiH4 gas to said processing vessel and evacuating said SiH4 gas from said processing vessel and causing the reaction between said WF6 gas and said SiH4 gas to form a second W film on said object as a W nucleation layer, are conducted at a substrate temperature in a range between 380\xb0 C. and 500\xb0 C.
33. The method as claimed in claim 32, wherein said SiH4 gas is supplied by setting said product of said partial pressure of said SiH4 gas and said duration in which said object is exposed to said SiH4 gas to the range between 333 Pa.sec and 10 kPa.sec.
34. The method as claimed in claim 33, wherein said WF6 gas is supplied by setting said product of said partial pressure of said WF6 gas and said duration in which said object is exposed to said WF6 gas in a range between 1333 Pa and 10 kPa.