1. A power device package comprising:
a lead frame;
a metal tab die attach paddle (DAP) attached to the lead frame; and
a power device die bonded to the metal tab DAP wherein the lead frame is formed of Cu, and the metal tab DAP is formed of an alloy of Fe and Ni having a coefficient of thermal expansion (CTE) lower than that of Cu,
wherein the metal tab DAP is attached to the lead frame using a first conductive adhesive material, the power device die is bonded to the metal tab DAP using a second conductive adhesive material, and a melting point of the first conductive adhesive material is higher than that of the second conductive adhesive material.
2. The power device package of claim 1, wherein the metal tab DAP comprises a plated portion in order to improve the wettability of the metal tab DAP for the first and second conductive adhesive materials, and the first and second conductive adhesive materials are attached to the plated portion.
3. The power device package of claim 1, wherein the first and second conductive adhesive materials are formed of solder wire or solder paste.
4. The power device package of claim 1, wherein the metal tab DAP has a coefficient of thermal expansion (CTE) to compensate for a difference between a CTE of the lead frame and a CTE of the power device die so as to minimize a stress exerted on the power device die.
5. The power device package of 1, further comprising a sealant surrounding the lead frame, the metal tab DAP, and the power device die so as to seal the power device die, the sealant having a long surface creepage distance from an outside of the package to the power device die due to the metal tab DAP.
6. The power device package of claim 1, wherein the metal tab DAP comprises a Cu-plated portion and a Ag-plated portion in order to improve the wettability of the metal tab DAP for the first and second conductive adhesive materials, the first conductive adhesive material is attached to the Cu plated portion, and the second conductive adhesive material is attached to the Ag plated portion.
7. The power device package of claim 1, wherein the metal tab DAP has a CTE lower than that of the lead frame.
8. The power device package of claim 1, wherein the metal tab DAP has an area larger than that of the lead frame.
9. The power device package of claim 1, wherein the lead frame is a single gauged lead frame having the same thickness as an outside lead or a dual gauged lead frame having a different thickness than the outside lead.
10. The power device package of claim 1, wherein the power device package is a surface mount device type package.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method of manufacturing a semiconductor device having a manufacturing sequence comprising:
a flow shop process of sequentially performing a series of plural different steps; and
a job shop process of providing a plurality of processing apparatuses of a kind and concurrently performing processing of different conditions,
wherein, in a process in said manufacturing sequence, either said flow shop process or said job shop process or both are performed, and said manufacturing sequence combines said flow shop process and said job shop process.
2. The method of manufacturing a semiconductor device according to claim 1, wherein a loader unit is provided at the joint between said flow shop process and said job shop process and, when a workpiece is transferred between said flow shop process and said job shop process, said workpiece is moved into said loader unit.
3. The method of manufacturing a semiconductor device according to claim 1, wherein a serial processing apparatus performs a series of plural different steps in said flow shop process.
4. The method of manufacturing a semiconductor device according to claim 3, wherein said serial processing apparatus sequentially performs die bonding, clean cure and wire bonding.
5. The method of manufacturing a semiconductor device according to claim 3, wherein said serial processing apparatus sequentially performs marking, cutting, testing and visual inspection.
6. The method of manufacturing a semiconductor device according to claim 1, wherein said manufacturing sequence uses two different types of said serial processing apparatuses and three different types of job shop process apparatuses, and one of said two serial processing apparatuses as a first serial processing apparatus performs die bonding, clean cure, and wire bonding and the other as a second serial processing apparatus performs marking, cutting, testing and visual inspection, and said three job processing apparatuses respectively perform dicing, molding, and coating.
7. The method of manufacturing a semiconductor device according to claim 6, wherein the number of wire bonders in said first serial processing apparatus is varied depending on the number of external terminals of said semiconductor device.
8. A method of manufacturing a semiconductor device having a manufacturing sequence comprising:
a flow shop process of sequentially performing a series of plural different steps; and
a job shop process of providing a plurality of processing apparatuses of a kind and concurrently performing processing of different conditions,
wherein in a process in said manufacturing sequence, either said flow shop process or said job shop process or both are performed, said manufacturing sequence combines said flow shop process and said job shop process, and for said flow shop process a serial processing apparatus is used to assemble a main product while for said job shop process, job processing apparatuses are used to assemble a small-lot product.
9. A method of manufacturing a semiconductor device having a manufacturing sequence comprising:
a flow shop process of sequentially performing a series of plural different steps; and
a job shop process of providing a plurality of processing apparatuses of a kind and concurrently performing processing of different conditions,
wherein in a process in said manufacturing sequence, either said flow shop process or said job shop process or both are performed, said manufacturing sequence combines said flow shop process and said job shop process, two different types of serial processing apparatuses are used to perform said flow shop process and said job shop process is performed between said two flow shop processes.
10. A method of manufacturing a semiconductor device having a manufacturing sequence comprising:
a flow shop process of sequentially performing a series of plural different steps; and
a job shop process of providing a plurality of processing apparatuses of a kind and concurrently performing processing of different conditions,
wherein in a process in said manufacturing sequence, either said flow shop process or said job shop process or both are performed, said manufacturing sequence combines said flow shop process and said job shop process, a serial processing apparatus is used to perform said flow shop process, and when said semiconductor device is an unscheduled product, said serial processing apparatus preferentially performs processing for said unscheduled product.
11. A method of manufacturing a semiconductor device having a manufacturing sequence comprising:
a flow shop process of sequentially performing a series of plural different steps; and
a job shop process of providing a plurality of processing apparatuses of a kind and concurrently performing processing of different conditions,
wherein in a process in said series manufacturing sequence, either said flow shop process or said job shop process or both are performed, said manufacturing sequence combines said flow shop process and said job shop process, and a serial processing apparatus having at least one loader unit is used for said flow shop process.
12. The method of manufacturing a semiconductor device according to claim 11, wherein said first serial processing apparatus is comprised of a die bonder, a clean cure unit, and a wire bonder, said loader unit is located between said clean cure unit and said wire bonder, and in transferring a workpiece from said clean cure unit to said loader unit, said workpiece is placed in a container and handled on a container basis.
13. The method of manufacturing a semiconductor device according to claim 11, wherein said first serial processing apparatus has a plurality of wire bonders and a clean cure unit, an unloader unit is located between two neighboring ones of said plural wire bonders, and in said plural wire bonders, the number of wire bonders located after said unloader unit, or remoter from said clean cure unit, is larger than the number of wire bonders located between said unloader unit and said clean cure unit.
14. A method of manufacturing a semiconductor device having a manufacturing sequence comprising:
a flow shop process of sequentially performing a series of plural different steps; and
a job shop process of providing a plurality of processing apparatuses of a kind and concurrently performing processing of different conditions,
wherein in a process in said manufacturing sequence, either said flow shop process or said job shop process or both are performed, and said manufacturing sequence combines said flow shop process and said job shop process,
wherein said flow shop process includes first serial processing and second serial processing, said first serial processing including die bonding, clean cure and wire bonding and said second serial processing including marking, cutting, testing and visual inspection, and
wherein the processing capacity of a first serial processing apparatus for performing said first serial processing is larger than that of a second serial processing apparatus for processing said second serial processing.
15. The method of manufacturing a semiconductor device according to claim 14, wherein a main product is assembled by said first serial processing and a small-lot product is assembled by job shop process which corresponds to said first serial processing.
16. A method of manufacturing a semiconductor device having a manufacturing sequence comprising:
a flow shop process of sequentially performing a series of plural different steps; and
a job shop process of providing a plurality of processing apparatuses of a kind and concurrently performing processing of different conditions,
wherein in a process in said manufacturing sequence, either said flow shop process or said job shop process or both are performed, and said manufacturing sequence combines said flow shop process and said job shop process,
wherein said flow shop process includes first serial processing and second serial processing, said first serial processing including die bonding, clean cure and wire bonding and said second serial processing including of marking, cutting, testing and visual inspection, and
wherein a testing unit which performs said testing uses a plurality of test heads.
17. A method of manufacturing a semiconductor device having a manufacturing sequence comprising:
a flow shop process of sequentially performing a series of plural different steps; and
a job shop process of providing a plurality of processing apparatuses of a kind and concurrently performing processing of different conditions,
wherein in a process in said manufacturing sequence, either said flow shop process or said job shop process or both are performed, and said manufacturing sequence combines said flow shop process and said job shop process, and
wherein data from a main process in said manufacturing sequence is sent to a control means and according to this data, instructions for a product for which a manufacturing process is to be started are sent from said control means to processing apparatuses in said main process in said manufacturing sequence.
18. The method of manufacturing a semiconductor device according to claim 17, wherein an instruction for wafer input is given to a dicing unit for dicing as a first step in said manufacturing sequence.
19. The method of manufacturing a semiconductor device according to claim 17, wherein an instruction to give priority to serial processing for said flow shop process in said manufacturing sequence is sent to job processing apparatuses in said job shop process.
20. The method of manufacturing a semiconductor device according to claim 17, wherein if a problem occurs in a serial processing apparatus which performs said flow shop process in said manufacturing sequence, an instruction to make steps performed by said serial processing be performed by said job shop process is sent to job processing apparatuses in said job shop process.
21. The method of manufacturing a semiconductor device according to claim 17, wherein in said manufacturing sequence, at least any one of a serial processing apparatus responsible for said flow shop process and a job processing apparatus responsible for said job shop process is stopped on purpose and upon this stop, an instruction to start a process is sent to an offline job processing apparatus.
22. A method of manufacturing a semiconductor device having a manufacturing sequence comprising:
a flow shop process of sequentially performing a series of plural different steps; and
a job shop process of providing a plurality of processing apparatuses of a kind and concurrently performing processing of different conditions,
said method comprising the steps of:
(a) dicing a semiconductor wafer into chips as said job shop process;
(b) after said step (a), sequentially performing die bonding, clean cure and wire bonding for semiconductor chips by a first serial processing apparatus as said flow shop process;
(c) after said step (b), plastic-molding said semiconductor chips as said job shop process;
(d) after said step (c), coating external terminals as said job shop process; and
(e) after said step (d), sequentially performing marking, cutting, testing and visual inspection as said flow shop process by a second serial processing apparatus,
wherein said flow shop process and said job shop process are combined to assemble a semiconductor device through said manufacturing sequence.