1. An enhanced mechanism for RFID reader, comprising:
an antenna for receiving RFID signal transmitted from an object under test and outputting the RFID signal to the RFID reader;
a metal plate device having a first metal plate and a second metal plate that are disposed on a top inner surface of an entrance of a building, wherein the first metal plate and the second metal plate form an angle ranging from 30 to 180 degrees relative to each other, and wherein the metal plate device and the object under test are respectively placed on the opposite sides of the antenna, and the metal plate device and the antenna are combined to strengthen a reception of antenna to thereby provide a high gain to the antenna; and
a partially reflective surface disposed in-between the antenna and the object under test and combining the first and the second metal plates to form a resonance cavity device to improve a radiated power gain.
2. The enhanced mechanism for RFID reader as claimed in claim 1, wherein the antenna is a circular polarized antenna.
3. The enhanced mechanism for RFID reader as claimed in claim 1, wherein the antenna is a dipole antenna.
4. The enhanced mechanism for RFID reader as claimed in claim 1, wherein an operating frequency of RFID signal is an ultra high frequency.
5. The enhanced mechanism for RFID reader as claimed in claim 1, wherein an operating frequency of RFID signal is a microwave frequency.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A charging material made from semiconductor material, for charging or recharging a melting crucible during the Czochralski crucible-pulling process, comprising
a polycrystalline semiconductor rod, which at one end has a groove; and
a monocrystalline semiconductor rod, which at one end has a tongue; and
a tongue-and-groove connection being created when said rods are coupled to each other.
2. The charging material as claimed in claim 1, wherein the monocrystalline semiconductor rod is a seed crystal.
3. A holding system for holding a polycrystalline silicon rod during the Czochralski crucible-pulling process or the float zone process, comprising
a tongue-and-groove connection between the polycrystalline semiconductor rod, which at one end has a groove, and a monocrystalline semiconductor rod, which at one end has a tongue; and
said connection being created when said tongue is coupled into said groove.
4. The holding system as claimed in claim 3,
wherein the monocrystalline semiconductor rod is a seed crystal.