1. An in-ground camera, comprising:
an in-ground, secure, recessed mounting interface; and
an upper surface portion, the upper surface portion operatively associated with a camera lens, primary camera components, and a media output interface or cable, wherein the upper surface portion is devoid of pointed edges and provides a downwardly concave profile having a lens and lens viewing cutout, wherein the lens and lens viewing cutout is configured to provide a lens view along a surface of or view upward from the surface of the ground, wherein the in-ground camera upper surface incorporates an air or fluid spray system provided through at least one aperture in the lens viewing cutout for cleaning the lens of the camera during use; and
wherein the upper surface portion presents no moving parts such that the upper surface is resistant to the forces of high-speed vehicles passing thereover.
2. An in-ground camera in accordance with claim 1, wherein said upper surface portion and said primary camera components are detachable from said in-ground, secure recessed mounting interface.
3. An in-ground camera in accordance with claim 1, wherein said in-ground, secure, recessed mounting interface comprises a base portion that is secured within a hole in the ground and that is configured to receive the upper surface portion and primary camera components.
4. An in-ground camera in accordance with claim 3, wherein said base portion includes at least one recess for receiving at least a portion of the primary camera components.
5. An in-ground camera in accordance with claim 1, wherein said ground comprises a racetrack surface.
6. An in-ground camera in accordance with claim 1, wherein said surface portion comprises a hardened material that is resistant to the forces of high-speed vehicles passing thereover.
7. An in-ground camera in accordance with claim 1, wherein the upper surface portion of the camera housing comprises an at least partially dome like surface that is devoid of exposed pointed edges.
8. An in-ground camera in accordance with claim 1, wherein the camera rises a maximum distance of about 0.25 inches above the surface of the ground.
9. An in-ground camera in accordance with claim 1, wherein the upper surface has a diameter of about 4 inches to provide a gentle transition between the ground surface and the top surface of the camera housing.
10. An in-ground camera in accordance with claim 1, wherein the in-ground camera upper surface incorporates a microphone to provide audio with camera video.
11. An in-ground camera in accordance with claim 1, wherein the air or fluid spray system comprises plural air or fluid spray apertures provided within the cutout.
12. An in-ground camera in accordance with claim 1, wherein the cutout is configured to direct airflow of such high-speed vehicles passing thereover towards the lens to clear or dry the lens.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed is:
1. A method of manufacturing semiconductor devices, comprising:
forming an insulating layer over a semiconductor substrate;
forming contact holes in the insulating layer;
forming a conductive layer over the insulating layer to burying the contact holes;
rotating the semiconductor substrate; and
etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate,
wherein the etching composition comprises a mixture of at least one oxidant selected from the group consisting of H2O2, O2, IO4, BrO3, ClO3, S2O8, KIO3, H5IO6, KOH, and HNO3 at least one enhancer selected from the group consisting of HF, NH4OH, H3PO4, H2SO4, NH4F, and HCl, and a buffer solution, and
wherein the oxidant, the enhancer, and the buffer solution have a mixing ratio such that after the etching, the material of the conductive layer is only present inside the contact hole and does not remain over the insulating layer.
2. A method of manufacturing semiconductor devices, as recited in claim 1, wherein the buffer solution comprises a deionized water.
3. A method of manufacturing semiconductor devices, as recited in claim 1, wherein the conductive layer comprises a material selected from the group consisting of tungsten (W), copper (Cu) , and polysilicon.
4. A method of manufacturing semiconductor devices, as recited in claim 3, further comprising forming a barrier metal layer over the semiconductor substrate and the insulating layer, after forming contact holes in the insulating layer, but before forming the conductive layer.
5. A method of manufacturing semiconductor devices, as recited in claim 4, wherein the barrier metal layer comprises a material selected from the group of Ti, TiN, TiTiN, Ta, TaN, and TaTaN.
6. A method of manufacturing semiconductor devices, as recited in claim 1, wherein the etching composition is supplied by a nozzle placed over the semiconductor substrate, the nozzle experiencing boom swing either to the right of center or to the left of center of the semiconductor substrate.
7. A method of manufacturing semiconductor devices, as recited in claim 1, wherein the processing temper atu re of the etching composition is in the range of 20 to 90 C.
8. A method of manufacturing semiconductor devices, as recited in claim 7, wherein the semiconductor substrate is heated to about the processing temperature of the etching composition.
9. A method of manufacturing semiconductor devices, as recited in claim 3, wherein the etching composition comprises 0.01 to 30 weight percent of HNO3, as an oxidant, 0.01 to 30 weight percent of NH4F as an enhancer, and a remaining weight percent of deionized water.
10. A method of manufacturing semiconductor devices, as recited in claim 3, wherein the etching composition comprises 3 to 55 weight percent of HNO3, as an oxidant, 0.2 to 35 weight percent of HF, as an enhancer, and a remaining weight percent of deionized water.
11. A method of manufacturing semiconductor devices, as recited in claim 3, wherein the etching composition comprises 0.2 to 30 weight percent of H2O2, as an oxidant, 0.01 to 30 weight percent of NH4OH, as an enhancer, and a remaining weight percent of deionized water.
12. A method of manufacturing semiconductor devices, as recited in claim 3, wherein the etching composition comprises 3 to 60 weight percent of HNO3, as an oxidant, 0.06 to 30 weight percent of HF, as an enhancer, and a remaining weight percent of deionized water.
13. A method of manufacturing semiconductor devices as recited in claim 1, wherein the etching of the conductive layer is carried out by at least two etching processes
14. A method of manufacturing semiconductor devices comprising the steps of:
forming a pattern structure over a semiconductor substrate;
forming an interlayer dielectric layer over the semiconductor substrate and the pattern structure;
rotating the semiconductor substrate; and
etching the interlayer dielectric layer by supplying on the rotating semiconductor substrate an etching composition comprising a mixture of at least one oxidant selected from the group consisting of H2O2, O2, IO4, BrO3, ClO3, S2O8, KIO3, H5IO6, KOH, and HNO3, at least one enhancer selected from the group consisting of HF, NH4OH, H3PO4, H2SO4, NH4F, and HCl, and a buffer solution,
wherein the oxidant, enhancer, and buffer solution are mixed in a certain mixing ratio such that the etching planarizes the interlayer dielectric layer.
15. A method of manufacturing semiconductor devices, as recited in claim 14, wherein the interlayer dielectric layer comprises a material selected from the group consisting of an oxide, a nitride, borophosphosilicate, and tetraethylorthosilicate.
16. A method of manufacturing semiconductor devices, as recited in claim 15, wherein the etching composition comprises 0.01 to 60 weight percent of HNO3, as an oxidant, 0.05 to 25 weight percent of HF as an enhancer, and a remaining weight percent of deionized water.
17. A method of manufacturing semiconductor devices, as recited in claim 15, wherein the etching composition comprises 0.01 to 30 weight percent of HNO3 as an oxidant, 0.01 to 30 weight percent of NH4F as an enhancer, and a remaining weight percent of deionized water.
18. A method of manufacturing semiconductor devices, as recited in claim 14, wherein the rotation speed of the semiconductor substrate is between 200 to 5000 rotations per minute.
19. A method of manufacturing semiconductor devices, as recited in claim 14, wherein the etching composition is supplied by a nozzle placed over the semiconductor substrate, the nozzle experiencing boom swing either to the right of center or to the left of center of the semiconductor substrate.
20. A method of manufacturing semiconductor devices, as recited in claim 19, wherein the boom swing comprises long distance boom swing and short distance boom swing, which are carried out sequentially.
21. A method of manufacturing semiconductor devices, as recited in claim 14, wherein the semiconductor substrate is heated to about the processing temperature of the etching composition.
22. A method of manufacturing semiconductor devices comprising:
forming an insulating layer over a semiconductor substrate;
forming contact holes in the insulating layer;
forming a covering layer over the insulating layer to bury the contact holes;
rotating the semiconductor substrate;
heating the semiconductor substrate by supplying hot gas to the back side of the semiconductor substrate; and
etching the covering layer by supplying an etching composition on the rotating semiconductor substrate,
wherein the material of the covering layer is only present inside the contact hole and does not remain over the insulating layer after the etching.
23. A method of manufacturing semiconductor devices, as recited in claim 22, wherein the etching composition comprises a mixture of at least one oxidant selected from the group consisting of H2O2, O2, IO4, BrO3, ClO3, S2O8, KIO3, H5IO6, KOH, and HNO3, at least one enhancer selected from the group consisting of HF, NH4OH, H3PO4, H2SO4, NH4F, and HCl, and a buffer solution,
24. A method of manufacturing semiconductor devices, as recited in claim 23, wherein the buffer solution comprises deionized water.
25. A method of manufacturing semiconductor devices, as recited in claim 22, wherein the covering layer comprises a conductive layer or an interlayer dielectric layer.
26. A method of manufacturing semiconductor devices, as recited in claim 22, wherein the hot gas comprises an inert gas, and the temperature of the hot gas is in the range of 20 C. to 90 C.
27. A method of manufacturing semiconductor devices, as recited in claim 22, wherein the etching composition is supplied by a nozzle placed over the semiconductor substrate, the nozzle experiencing boom swing either to the right of center or to the left of center of the semiconductor substrate.
28. A method of manufacturing semiconductor devices, as recited in claim 22, wherein the processing temperature of the etching composition is in the range of 20 C. to 90 C.
29. A semiconductor substrate, comprising:
a cell region including a conductive plug comprised of a conductive material; and
a peripheral region including a hole pattern for use as one of an align mark or a scribe line,
wherein the hole pattern contains none of the conductive material.
30. A semiconductor substrate, as recited in claim 29, wherein the conductive material comprises a material selected from the group consisting of tungsten (W), copper (Cu), or polysilicon.