1. A method for making a mask from a substrate having at least two layers of attenuating material and an opaque layer comprising:
etching the substrate to form at least one completely transmissive region and at least one slightly attenuated region using a second patterned resist over said substrate for etching the substrate to form at least one highly attenuated region.
2. A mask fabricated from a substrate comprising:
a first and second plurality of isolated completely transmissive regions;
a plurality of slightly attenuated regions, each of said plurality of slightly attenuated regions formed at an edge defining one of the first plurality of isolated completely transmissive regions; and
a plurality of highly attenuated regions, each of said plurality of highly attenuated regions being formed at an edge defining one of the second plurality of isolated completely transmissive regions, said plurality of highly attenuated regions comprising a first layer of attenuating material, a layer of etch stop material, and a second layer of attenuating material.
3. A method for fabricating a mask on a substrate comprising:
forming a first layer of attenuating material over a portion of the substrate, another layer of material over a portion of the first layer, a second layer of attenuating material over a portion of the another layer of material, and forming an opaque layer over a portion of the second layer of attenuating material;
etching the substrate to form at least one completely transmissive region and to form at least one slightly attenuated region, the etching including forming a patterned resist over the substrate; and
etching the substrate to form at least one highly attenuated region.
4. The method according to claim 3, wherein etching the substrate to form the at least one completely transmissive region comprises forming a first patterned resist over the opaque layer of the substrate and etching the substrate to form a plurality of isolated completely transmissive regions and a plurality of closely spaced completely transmissive regions.
5. The method according to claim 4, wherein etching the substrate to form the at least one slightly attenuated region comprises removing portions of the opaque layer and the second layer of attenuating material to form a plurality of slightly attenuated regions, each of the plurality of slightly attenuated regions being positioned at an edge defining one of the plurality of isolated completely transmissive regions.
6. The method according to claim 4, wherein etching the substrate to form the at least one highly attenuated region comprises removing portions of the opaque layer to form a plurality of highly attenuated regions, each of the plurality of highly attenuated regions being positioned at an edge defining one of the plurality of closely spaced completely transmissive regions.
7. The method according to claim 6, wherein etching the substrate to form the plurality of highly attenuated regions comprises forming a third patterned resist over the substrate.
8. The method according to claim 3, wherein the another layer of material comprises an etch stop layer between the first layer of attenuating material and the second layer of attenuating material.
9. The method according to claim 8, wherein etching the substrate to form the at least one completely transmissive region comprises forming a first patterned resist over the opaque layer of the substrate and etching the substrate to form a plurality of isolated completely transmissive regions and a plurality of closely spaced completely transmissive regions.
10. The method according to claim 3, wherein etching the substrate to form the at least one slightly attenuated region comprises removing portions of the opaque layer and the second layer of attenuating material in a single etch step to form a plurality of slightly attenuated regions, each of the plurality of slightly attenuated regions being positioned at an edge defining one of the plurality of isolated completely transmissive regions.
11. The method according to claim 10, wherein etching the substrate to form the at least one highly attenuated region comprises removing portions of the opaque layer to form a plurality of highly attenuated regions, each of the plurality of highly attenuated regions being positioned at an edge defining one of the plurality of closely spaced completely transmissive regions.
12. The method according to claim 10, wherein etching the substrate to form the plurality of highly attenuated regions comprises forming a third patterned resist over the substrate.
13. An attenuated phase shift mask for a substrate comprising:
forming a plurality of isolated completely transmissive regions and a plurality of other regions on the substrate, a plurality of slightly attenuated regions, each of the plurality of slightly attenuated regions being formed at an edge defining one of the plurality of isolated completely transmissive regions on the substrate, the plurality of slightly attenuated regions comprising a layer of a first material and a layer of a second material, and a plurality of completely transmissive regions on the substrate; forming a plurality of highly attenuated regions, each of the plurality of highly attenuated regions being formed at an edge defining one of the plurality of isolated completely transmissive regions, the plurality of highly attenuated regions comprising a first layer of attenuating material, a layer of etch stop material, and a second layer of attenuating material on the substrate.
14. The phase shift mask of claim 13, further comprising a plurality of opaque regions comprising chromium.
15. The phase shift mask of claim 13, wherein the transparent substrate comprises a material of quartz, fused silica, and glass.
16. The phase shift mask of claim 13, wherein the plurality of slightly attenuated regions comprise a layer of attenuating material comprising chromium oxynitride and chromium fluoride.
17. The phase shift mask of claim 13, wherein the first layer of attenuating material is selected from a group comprising chromium oxynitride and chromium fluoride and the second layer of attenuating material comprises molybdenum silicide oxynitride.
18. The phase shift mask of claim 13, wherein the first material and the second material of the plurality of slightly attenuated regions consists of a layer of attenuating material and a layer of etch stop material.
19. The phase shift mask of claim 19, wherein the layer of attenuating material comprises chromium oxynitride and chromium fluoride and the layer of etch stop material comprises at least some silicon dioxide.
20. The phase shift mask of claim 13, wherein the first layer of attenuating material comprises chromium oxynitride and chromium fluoride, the layer of etch stop material comprises at least some silicon dioxide, and the second layer of attenuating material comprises molybdenum silicide oxynitride.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A nozzle, comprising:
a housing; and
an assembly including at least two deformable conjugated parts separated by a spacer seal, the assembly being arranged in the housing so as to form a nozzle outlet, the housing and the parts and the spacer seal being deformable so as to define a geometry of the nozzle outlet and seal surfaces between the parts and the spacer seal and between the parts and the housing;
wherein the parts and the spacer seal are configured so that an assembly force needed for inserting the assembly into the housing exceeds a force that deforms the housing and the assembly, and wherein the parts and the housing are deformed by the assembly force when assembled together to create a seal between the housing and the assembly and between the parts and the spacer seal and to provide a desired nozzle outlet geometry.
2. A nozzle according to claim 1, wherein the housing is cylindrical, the parts are circle segments, and the spacer seal is rectangular.
3. A nozzle according to claim 2, and further comprising a deformable ring arranged between an inner shoulder of the housing and the assembly so as to seal the outlet of the nozzle.
4. A nozzle according to claim 2, wherein a plurality of conjugated parts and spacer seals are arranged in a sequence so as to form parallel openings.
5. A nozzle according to claim 4, wherein the assembly is configured to form several streams that focus at a common point.
6. A nozzle according to claim 1, wherein the housing has a rectangular internal cross-sectional shape.
7. A nozzle according to claim 1, wherein the nozzle outlet has a zig-zag shape.
8. A nozzle according to claim 1, wherein the nozzle outlet is discontinuous.
9. A nozzle according to claim 1, wherein the nozzle outlet is formed by openings on alternate opposite sides of a center line.