1. A kind of assessorial handle fixing base, which can be installed on the conventional bicycle handle, in the course of locking the front middle of the handle in the arc groove positioned at the front end of the handle standpipe by means of corresponding to the arc groove to another arc groove with many screws. The present invention mainly is composed of an assessorial handle, two cushions for elbow’s relaxation, and fixing bases, featuring that: to make the lower section of the fixing base be an arc position sheet, and make the radian of the position sheet same with the one of the outside pipe at the front middle of the handle. At the same time, joint the sheet on the outer edge of the pipe at the front middle of the handle; additionally, a position hole is designed on the center of the upper section for the insertion of the end of the assessorial handle and combination and locking with the screws; moreover, a position base is designed respectively on the two sides of the position hole, on which many adjusting holes are available for locking the cushions together and adjusting the distance between cushions. Thus, according to the foregoing structure, the fixing base for fixing the assessorial handle can be combined at the locking position section of the handle and standpipe and an assessorial handle can be installed on the conventional bicycle handle while locking the front middle of the handle in the arc groove positioned at the front end of the handle standpipe by means of corresponding to the arc groove to another arc groove with many screws. Furthermore, based on the same radian of the position sheet at the lower section of the fixing base and the outside pipe diameter at the front middle of the handle, the assessorial handle can be adjusted upwards or downwards properly depending on user’s demands.
2. The Assessorial Handle Fixing Base for Bicycle, as recited in claim 1, wherein we can make the lower section of the fixing base for fixing the assessorial handle added on the common bicycle handle be arc position sheets and make the radian of the position sheet same with the one of the outside pipe at the front middle of the conventional bicycle handle, and redesign the upper section as a position pipe after jointing the sheet on the outer edge of the pipe at the front middle of the handle, so that some meters for measuring time or speed, or other articles can be laid on the outer edge of the position pipe.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
forming a plurality of conductive vias into the semiconductor wafer;
removing a portion of the semiconductor wafer so the conductive vias extend above a surface of the semiconductor wafer;
forming a first insulating layer over the surface of the semiconductor wafer and conductive vias;
removing a first portion of the first insulating layer while leaving a second portion of the first insulating layer as guard rings around the conductive vias;
forming a second insulating layer over the surface of the semiconductor wafer, guard rings, and conductive vias; and
removing a portion of the second insulating layer to expose the conductive vias.
2. The method of claim 1, wherein forming the plurality of conductive vias includes:
forming a plurality of vias through the semiconductor wafer;
forming a third insulating layer in the vias; and
depositing a conductive material in the vias.
3. The method of claim 2, further including forming a conductive layer over the third insulating layer.
4. The method of claim 1, further including forming a conductive layer over the conductive vias.
5. The method of claim 1, further including removing the portion of the second insulating layer to expose the guard rings.
6. The method of claim 1, further including removing the first portion of the first insulating layer by laser direct ablation.
7. A method of making a semiconductor device, comprising:
providing a semiconductor die;
forming a conductive via through the semiconductor die with a portion of the conductive via extending above a surface of the semiconductor die;
forming a first insulating layer over the surface of the semiconductor die and conductive via; and
removing a first portion of the first insulating layer while leaving a second portion of the first insulating layer as a guard ring around the conductive via.
8. The method of claim 7, further including:
forming a second insulating layer over the surface of the semiconductor die, guard ring, and conductive via; and
removing a portion of the second insulating layer to expose the conductive via.
9. The method of claim 8, further including removing the portion of the second insulating layer to expose the guard ring.
10. The method of claim 8, further including removing the portion of the second insulating layer over the conductive via by laser direct ablation.
11. The method of claim 7, wherein forming the conductive via includes:
forming a via through the semiconductor die;
forming a second insulating layer in the via; and
depositing a conductive material in the via.
12. The method of claim 11, further including forming a conductive layer over the second insulating layer.
13. The method of claim 7, further including forming a conductive layer over the conductive via.
14. A method of making a semiconductor device, comprising:
providing a semiconductor die;
forming a conductive via through the semiconductor die with a portion of the conductive via extending above a surface of the semiconductor die;
forming a guard ring over the surface of the semiconductor die around the conductive via;
forming a first insulating layer over the surface of the semiconductor die, guard ring, and conductive via; and
removing a portion of the first insulating layer to expose the conductive via and guard ring.
15. The method of claim 14, wherein forming the guard ring includes:
forming a second insulating layer over the surface of the semiconductor die and conductive via; and
removing a first portion of the second insulating layer while leaving a second portion of the second insulating layer as the guard ring around the conductive via.
16. The method of claim 14, wherein forming the conductive via includes:
forming a via through the semiconductor die;
forming a second insulating layer in the via; and
depositing a conductive material in the via.
17. The method of claim 14, further including forming a conductive layer over the conductive via.
18. A semiconductor device, comprising:
a semiconductor die;
a conductive via formed through the semiconductor die with a portion of the conductive via extending above a surface of the semiconductor die;
a guard ring formed over the surface of the semiconductor die around the conductive via; and
a first insulating layer formed over the surface of the semiconductor die and conductive via to expose the guard ring and conductive via.
19. The semiconductor device of claim 18, further including a second insulating layer formed around the conductive via.
20. The semiconductor device of claim 18, further including a conductive layer formed over the conductive via.