What is claimed is:
1. A benefit agent delivery system suitable for delivering a benefit agent to a substrate, the benefit agent delivery system comprising a polymer particle and a benefit agent, wherein the polymer particle and the benefit agent are separately added to a matrix to form the benefit agent delivery system; and when the benefit agent delivery system is deposited onto the substrate, directly or indirectly, the Response Factor (RF) exhibited by the benefit agent delivery system is at least about 1.5, as measured by Test Ptotocol I or II.
2. The delivery system according to claim 1 wherein the matrix is a granular matrix or a liquid matrix.
3. The delivery system according to claim 1 wherein the delivery system and the matrix are diluted with water before andor after contacting the substrate.
4. The delivery system according to claim 1 wherein the polymer particle and the benefit agent become non-polymerically associated in the matrix.
5. The delivery system according to claim 1 wherein the benefit agent is a perfume raw material.
6. The delivery system according to claim 5 wherein the polymer particle comprises a polymer which exhibits a first affinity for a low Kovats index (LKI) perfume raw material having a Kovats Index of from about 1000 to about 1400 and a second affinity for a high Kovats index (HKI) perfume raw material having a Kovats Index of greater than about 1700, the first affinity is at least about 2 times greater than the second affinity, as measured by Affinity Test Protocol III.
7. The delivery system according to claim 1 wherein the benefit agent is a perfume accord comprising one or more LKI perfume raw materials, each having a Kovats Index value of from about 1000 to about 1400, and one or more HKI perfume raw materials, each having a Kovats Index value of greater than about 1700.
8. The delivery system according to claim 7 wherein the LKI perfume raw materials collectively provide a first Average Response Factor (ARFLKI) and the HKI perfume raw materials collectively provide a second Average Response Factor (ARFHKI); the perfume polymeric particle has a ratio of ARFLKIARFHKI of at least about 1.2.
9. A composition comprising the benefit agent delivery system according to claim 1 and an adjunct ingredient.
10. The composition according to claim 9 wherein the composition is a personal care composition, a fabric care composition, or a hard surface care composition.
11. A composition according to claim 9 wherein the polymer particle and the benefit agent are separate, discrete components at least one point in time after the composition has been produced and become associated with one another prior to, during or as result of being applied directly andor indirectly to a substrate.
12. A method for making a granular or liquid composition containing a benefit agent delivery system comprising the steps of:
a) providing a granular or liquid matrix;
b) adding a polymer particle to the matrix; and
c) adding a benefit agent to the matrix;
wherein the polymer particle and benefit agent are added as separate, discrete components from different sources to form the benefit delivery system.
13. The method according to claim 12 wherein the Response Factor (RF) exhibited by the benefit agent is at least about 1.5, as measured by Test Ptotocol I or II.
14. The method according to claim 12 wherein the polymer particle and benefit agent become non-polymerically associated in the matrix.
15. The method according to claim 12 wherein the benefit agent is a perfume raw material.
16. The method according to claim 15 wherein the polymer particle comprises a polymer which exhibits a first affinity for a low Kovats index (LKI) perfume raw material having a Kovats Index of from about 1000 to about 1400 and a second affinity for a high Kovats index (HKI) perfume raw material having a Kovats Index of greater than about 1700, the first affinity is at least about 2 times greater than the second affinity, as measured by Affinity Test Protocol III.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device that comprises a high voltage element and a low voltage element, said device comprising:
a semiconductor substrate having high voltage element region where said high voltage element is present, and a low voltage element region where said low voltage element is present;
a first isolation structure present in said high voltage element region; and
a second isolation structure present in said low voltage element region, wherein said first isolation structure comprises a first LOCOS oxide film present on a surface of said semiconductor substrate, an isolated CVD oxide film obtained by etching an oxide film deposited by CVD on said first LOCOS oxide film, and an electrode present on said isolated CVD oxide film,
said second isolation structure consisting of:
a n+ diffusion layer buried in said semiconductor substrate;
a n\u2212 epitaxial layer;
a p\u2212 diffusion layer;
a n+ diffusion region present in the p\u2212 diffusion layer;
a p+ diffusion region present in the n\u2212 epitaxial layer;
a polysilicon electrode present on an oxide film;
at least one second LOCOS oxide film;
an insulation layer;
an aluminum electrode present on said insulation layer; and
a silicon nitride protection film present on said aluminum electrode, where a thickness of the first LOCOS oxide film of said first isolation structure is approximately the same as a thickness of the second LOCOS oxide film of said second isolation structure.
2. The semiconductor device according to claim 1, wherein said isolated CVD oxide film has a multi-layer structure of at least a lower CVD oxide film layer and a upper CVD oxide film layer present on said lower CVD oxide film layer, and said isolated CVD oxide film has a stepped edge portion of said lower CVD oxide film layer and said upper CVD oxide film layer.
3. The semiconductor device according to claim 2, wherein a field plate covers said stepped edge portion.
4. A method of manufacturing a semiconductor device according to claim 1, comprising:
forming a high voltage element region in a semiconductor substrate where said high voltage element is located;
forming a low voltage element region in said semiconductor substrate where said low voltage element is located;
simultaneously forming a first LOCOS oxide film on said high voltage element region and at least one second LOCOS oxide film on said low voltage element region;
depositing by CVD a CVD oxide film on at least said first LOCOS oxide film on said high voltage element region; and
etching said CVD oxide film thereby forming an isolated CVD oxide film, isolated on said first LOCOS oxide film.
5. The manufacturing method according to claim 4, further comprising:
forming a nitrogen film on a surface of said semiconductor substrate before forming said LOCOS oxide films;
wherein said etching comprises:
forming said CVD oxide film on said nitrogen film;
etching said CVD oxide film using a mask formed on said CVD oxide film and leaving said CVD oxide film so that said CVD oxide film overlaps with said nitrogen film at its circumference; and
wet-etching said CVD oxide film and removing an overlapping section of said CVD oxide film which overlaps with said nitrogen film.
6. The manufacturing method according to claim 4, wherein said etching comprises:
forming a lower CVD oxide film layer on said LOCOS oxide film and thermally processing said lower CVD oxide film layer;
forming an upper CVD oxide film layer on said lower CVD oxide film layer; and
wet-etching said upper CVD oxide film layer and said lower CVD oxide film layer using a mask formed on said upper CVD oxide film layer, and thereby forming said CVD oxide film having a stepped edge portion formed of said upper CVD oxide film layer and said lower CVD oxide film.
7. The semiconductor device according to claim 1, wherein each of said LOCOS oxide films has a thickness ranging from 100 to 800 nm.
8. The semiconductor device according to claim 1, wherein said isolated CVD oxide film has a thickness ranging from 300 to 2000 nm.
9. The semiconductor device according to claim 1, wherein each of said LOCOS oxide films has a thickness of from 100 to 800 nm; and
said isolated CVD oxide film has a thickness of from 300 to 2000 nm.
10. The method according to claim 4, wherein each of said LOCOS oxide films has a thickness ranging from 100 to 800 nm.
11. The method according to claim 4, wherein said isolated CVD oxide film has a thickness ranging from 300 to 2000 nm.
12. The method according to claim 4, wherein each of said LOCOS oxide films has a thickness of from 100 to 800 nm; and
said CVD oxide film has a thickness of from 300 to 2000 nm.
13. The method according to claim 6, wherein said thermal processing occurs at a temperature of 900\xb0 C. for 60 minutes.
14. A semiconductor device having a high voltage element and a low voltage element, the semiconductor device comprising:
a semiconductor substrate having high voltage element region where said high voltage element is present, and a low voltage element region where said low voltage element is present;
a first isolation structure disposed in said high voltage element region; and
a second isolation structure disposed in said low voltage element region, wherein
said first isolation structure comprises a first LOCOS oxide film present on a surface of said semiconductor substrate, a CVD oxide film present on said first LOCOS oxide film, a polysilicon electrode present on said CVD oxide film, and an aluminum electrode present in a n+ diffusion region of said high voltage element region of said semiconductor substrate;
said second isolation structure comprises a second LOCOS oxide film and a polysilicon electrode present thereon, wherein
each of said LOCOS oxide films has a thickness of from 100 to 800 nm; and
said CVD oxide film has a thickness of from 300 to 2000 nm.
15. The semiconductor device according to claim 1, wherein said isolated CVD oxide film is completely covered by at least one of said insulation layer and a protection film.
16. The semiconductor device according to claim 14, wherein said CVD oxide film is completely covered by at least one of an insulation layer and a protection film.
17. The semiconductor device according to claim 1, wherein said isolated CVD oxide film is completely contacted on an upper surface by at least one of said insulation layer and a protection film.
18. The semiconductor device according to claim 14, wherein said CVD oxide film is completely contacted on an upper surface by at least one of an insulation layer and a protection film.
19. The semiconductor device according to claim 1, which is obtained by a process comprising:
depositing a pad oxide layer and a nitride film on said semiconductor substrate, where said pad oxide layer contacts said semiconductor substrate and said nitride film contacts said pad oxide layer;
patterning said nitride film between a photoresist to expose a patterned surface of said substrate;
selectively oxidizing said patterned surface to form said first and second LOCOS oxide layers;
depositing a CVD oxide layer on said first and second LOCOS oxide layers;
wet etching said CVD oxide layer thereby patterning said CVD oxide layer present on said first oxide layer; and
removing said CVD oxide layer present on said second LOCOS oxide layer.