1. A semiconductor device comprising:
a first memory mat including a plurality of first non-volatile memory cells, a plurality of first volatile memory cells, of which a storage capacity is smaller than a storage capacity of the plurality of first non-volatile memory cells, and a first local data line coupled to the plurality of first non-volatile memory and the plurality of first volatile memory;
a second memory mat including a plurality of second non-volatile memory cells, a plurality of second volatile memory cells, of which a storage capacity is smaller than a storage capacity of the plurality of second volatile memory cells, and a second local data line coupled to the plurality of second non-volatile memory cells and the plurality of second volatile memory cells; and
a global data line coupled to the first local data line via a first switch and to the second local data line via a second switch,
wherein, while first information that is transferred from the global data line to the first local data line is written into at least one of the plurality of first non-volatile memory cells, second information is transferred from the global data line to the second data line by turning off the first switch and turning on the second switch.
2. A semiconductor device according to claim 1, wherein
the plurality of first and second non-volatile memory cells are formed above the plurality of first and second volatile memory cells.
3. A semiconductor device according to claim 1, further comprising:
a plurality of memory mats including the first memory mat and the second memory mat,
wherein sequential sector numbers are allocated to different memory mats.
4. A semiconductor device according to claim 1, wherein
the plurality of first and second volatile memory cells are SRAM cells.
5. A semiconductor device according to claim 4, wherein
third information read out from one of the plurality of first non-volatile memory cells is amplified by one of the plurality of first volatile memory cells, and
wherein the amplified third information is transferred to the global data line by turning on the first switch.
6. A semiconductor device according to claim 1, wherein
at least one of the plurality of first volatile memory cells is adapted to hold the first information to write the first information into at least one of the plurality of first non-volatile memory cells after turning off the first switch.
7. A semiconductor device according to claim 1, wherein
while the first information is written into at least one of the plurality of first non-volatile memory cells, at least one of the plurality of second non-volatile memory cells is activated to hold the second information from the global data line.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method to improve operational efficiency of an optoelectronic device, the optoelectronic device comprising a first electrode, a second electrode and an organic optoelectronic sub-structure disposed between the first and the second electrodes, wherein the efficiency of the optoelectronic device is at least partially based on an electron transport process in the optoelectronic sub-structure, said method comprising:
providing an inorganic layer between the organic optoelectronic sub-structure and the second electrode, wherein the inorganic layer comprises at least a layer substantially made of LiMn2O4, wherein the optoelectronic device comprises a light emitting device and the optoelectronic sub-structure comprises an emissive section, an electron transport section for providing electrons and a hole transport section for providing holes so that at least some of the provided electrons and holes combine in the emissive section to produce electromagnetic radiation, and wherein the first electrode comprises an anode adjacent to the hole transport section, the second electrode comprises a cathode adjacent to the election transport section, and the inorganic layer is disposed between the electron transport section and the cathode.
2. A method to improve operational efficiency of an optoelectronic device, the optoelectronic device comprising a first electrode, a second electrode and an organic optoelectronic sub-structure disposed between the first and the second electrodes, wherein the efficiency of the optoelectronic device is at least partially based on an electron transport process in the optoelectronic sub-structure, said method comprising:
providing an inorganic layer between the organic optoelectronic sub-structure and the second electrode, wherein the inorganic layer comprises at least a layer substantially made of LiMn2O4, wherein the optoelectronic device comprises a photocell and the optoelectronic sub-structure comprises an active layer for producing electron-hole pairs in response to electromagnetic radiation, an electron transport section for transporting at least some of electrons produced by said electron-hole pairs to the first electrode, and a hole transport section for transporting at least some of holes produced by the electron-hole pairs to the second electrode.