1. A ferromagnetic thin-film based digital memory, said memory comprising:
a substrate;
a plurality of bit structures, each supported on said substrate and separated from one another by spacer material therebetween, that are electrically interconnected with information storage and retrieval circuitry, said bit structures each comprising first and second relatively fixed magnetization layers each with a magnetization direction substantially opposite one another and formed of materials selected from only ferromagnetic and antiferromagnetic materials, and a ferromagnetic material film in which a characteristic magnetic property is substantially maintained below a first critical temperature above which such magnetic property is not maintained, and with said ferromagnetic material film being separated from said first relatively fixed magnetization layer by a first intermediate layer of a nonmagnetic material having first and second major surfaces and further being separated from said second relatively fixed magnetization layer by a second intermediate layer of a nonmagnetic material having first and second major surfaces with said nonmagnetic material of one of said first and second intermediate layers being electrically insulative and that one remaining being electrically conductive, said bit structures each having a first interconnection structure providing electrical contact thereto positioned against a first contact surface thereof substantially parallel to said major surfaces of said first and second intermediate layers and also between said first contact surface and said substrate; and
a plurality of word line structures each having a pair of word line end terminal regions adapted to conduct electrical current in at least one direction therethrough, each of said pairs of word line end terminal regions having an electrical conductor electrically connected therebetween which is located on an opposite side of said first and second intermediate layers of a corresponding one of said bit structures from said first interconnection structure providing electrical contact thereto, said information storage and retrieval circuitry for drawing electrical current selectively through each said bit structure and said first interconnection structure providing electrical contact thereto to raise temperatures of said ferromagnetic material film therein while being above temperatures of at least an adjacent said bit structure because of sufficient extent of, and smallness of thermal conductivities of, at least portions of said selected bit structure and of those portions of said substrate and said spacer material positioned thereabout.
2. The device of claim 1 wherein said plurality of word line structures each has said electrical conductor therein located across said spacer material from said corresponding one of said bit structures, and wherein each of said bit structures has a second interconnection structure providing electrical contact thereto positioned against a second contact surface thereof substantially parallel to said first and second intermediate layer first and second major surfaces located on an opposite side of said first and second intermediate layers therein from said first interconnection structure also providing electrical contact thereto.
3. The device of claim 2 further comprising said plurality of bit structures each having a relatively high thermal resistance material layer located between said first intermediate layer and said first interconnection structure which has a thermal diffusivity less than that of said first interconnection structure, and another relatively high thermal resistance material layer located between said second intermediate layer and said second interconnection structure which has a thermal diffusivity less than that of said second interconnection structure.
4. The device of claim 1 wherein said plurality of word line structures each has said electrical conductor therein providing electrical contact to said corresponding one of said bit structures through being against a second contact surface thereof substantially parallel to said intermediate layer major surfaces located on an opposite side of said intermediate layer therein from said first interconnection structure also providing electrical contact thereto.
5. The device of claim 4 further comprising said plurality of bit structures each having a relatively high thermal resistance material layer located between said first intermediate layer and said first interconnection structure which has a thermal diffusivity less than that of said first interconnection structure, and another relatively high thermal resistance material layer located between said second intermediate layer and said corresponding word line electrical conductor providing electrical contact thereto which has a thermal diffusivity less than that of that said corresponding word line electrical conductor.
6. The device of claim 4 further comprising said plurality of word line structures each having said electrical conductor therein providing electrical contact to said corresponding one of said bit structures has at least one side thereof cladded with a magnetically permeable material.
7. The device of claim 6 further comprising said magnetically permeable material extending from where cladding a said electrical conductor corresponding to one of said bit structures to being positioned across at least from opposite edges of said first and second intermediate layers in that said bit structure.
8. The device of claim 1 further comprising said plurality of bit structures each having a relatively high thermal resistance material layer located between said intermediate layer and said first interconnection structure which has a thermal diffusivity less than that of said first interconnection structure.
9. The device of claim 8 wherein said relatively high thermal resistance material layer also is antiferromagnetic.
10. The device of claim 1 wherein said information storage and retrieval circuitry has a plurality of transistors therein so that each of said plurality of bit structures has a said transistor electrically coupled thereto that selectively substantially prevents current in at least one direction along a current path through that said bit structure.
11. The device of claim 1 wherein that said one of said first and second intermediate layers formed of an electrically insulative nonmagnetic material has differing values of electrical resistance between said first and second major surfaces thereof at least at two differing locations across said first and second major surfaces.
The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.
1. A stackable garment hanger, comprising:
a hook; and
two shoulder regions, each of the shoulder regions being disposed on opposing sides of the hook and having an elongated, substantially planar region having a front surface, a rear surface, and an elongated edge, a raised periphery region extending along at least a portion of the edge of each planar region, each raised periphery region being raised relative to both the front and rear surfaces of an associated planar region of an associated shoulder region;
wherein at least a portion of the stackable garment hanger is configured to nest within at an outline of at least a portion of another, identically designed garment hanger when the garment hanger and the identically designed garment hanger are stacked vertically.
2. The invention according to claim 1, wherein multiple instances of the stackable garment hanger are vertically stackable in a back-and-forth, undulating manner, with at least a portion of each instance of a stackable garment hanger nesting within an outline of a successive stackable garment hanger within an overall stack of stackable garment hangers.
3. The invention according to claim 1, wherein the stackable garment hanger further includes at least two apertures extending through a portion of the garment hanger, the two apertures being separated by a distance substantially corresponding to an offset distance between adjacent instances of the stackable garment hanger when multiple stackable garment hangers are stacked vertically in the undulating, back-and-forth orientation.
4. The invention according to claim 3, wherein a coaxial opening extends through only one of the two apertures of each stackable garment hangers when a plurality of stackable garment hangers are stacked in the undulating, back-and-forth orientation.
5. The invention according to claim 1, wherein the stackable garment hanger has a front side and a rear side, the rear side being substantially a mirror image of the front side.
6. The invention according to claim 1, further comprising a pant bar having an elongated, substantially planar region having a front surface, a rear surface, and an elongated edge, a raised periphery region extending along at least a portion of the edge of the substantially planar region, the raised periphery region being raised relative to both the front and rear surfaces of the planar region of the pant bar.
7. The invention according to claim 1, further comprising a crossbar having an elongated, substantially planar region having a front surface, a rear surface, and an elongated edge, a raised periphery region extending along at least a portion of the edge of the substantially planar region, the raised periphery region being raised relative to both the front and rear surfaces of the planar region of the crossbar.
8. The invention according to claim 1, wherein the hook includes a substantially planar region having a front surface, a rear surface, and an elongated edge, a raised periphery region extending along at least a portion of the edge of the hook, the raised periphery region being raised relative to both the front and rear surfaces of the planar region of the hook.