1. A liquid crystal display device comprising:
gate lines, source lines, and a plurality of pixels, and comprising, in each of the plurality of pixels, a transistor and a reflection section for reflecting incident light toward a display surface, wherein,
the reflection section includes a metal layer, an insulating layer formed on the metal layer, a semiconductor layer formed on the insulating layer, and a reflective layer formed on the semiconductor layer;
the metal layer is electrically connected to neither the gate lines nor the source lines;
a plurality of recesses are formed on a surface of the reflective layer;
a storage capacitor is formed between at least a portion of the metal layer and at least a portion of the reflective layer; and
at least one of the metal layer and the reflective layer includes two portions which are electrically isolated from each other.
2. The liquid crystal display device of claim 1, wherein,
the metal layer includes a first portion and a second portion which are electrically isolated from each other;
the first portion of the metal layer is connected to a storage capacitor line;
the reflective layer is connected to a drain of the transistor; and
the storage capacitor is formed between the first portion of the metal layer and the reflective layer.
3. The liquid crystal display device of claim 1, wherein,
the reflective layer includes a first portion and a second portion which are electrically isolated from each other;
the first portion of the reflective layer is connected to a drain of the transistor;
the metal layer is connected to a storage capacitor line; and
the storage capacitor is formed between the metal layer and the first portion of the reflective layer.
4. The liquid crystal display device of claim 1, wherein,
the metal layer includes a first portion and a second portion which are electrically isolated from each other;
the reflective layer includes a first portion and a second portion which are electrically isolated from each other;
the first portion of the metal layer is connected to a storage capacitor line;
the first portion of the reflective layer is connected to a drain of the transistor; and
the storage capacitor is formed between the first portion of the metal layer and the first portion of the reflective layer.
5. The liquid crystal display device of claim 1, wherein the plurality of recesses include a first recess and a second recess overlapping the first recess.
6. The liquid crystal display device of claim 5, wherein the first recess is formed so as to conform to the shape of the metal layer, and the second recess is formed so as to conform to the shape of the semiconductor layer.
7. The liquid crystal display device of claim 5, wherein the metal layer includes an aperture or a recess, and the first recess is formed correspondingly to the aperture or recess in the metal layer.
8. The liquid crystal display device of claim 5, wherein the semiconductor layer includes an aperture or a recess, and the second recess is formed correspondingly to the aperture or recess in the semiconductor layer.
9. The liquid crystal display device of claim 5, wherein a level difference is formed on a side face of the plurality of recesses.
10. The liquid crystal display device of claim 5, wherein the first recess and the second recess are formed based on the shape of an aperture or a recess which is included in at least two layers among the metal layer, the insulating layer, and the semiconductor layer.
11. The liquid crystal display device of claim 1, wherein the metal layer, the semiconductor layer, and the reflective layer are formed from same materials as, respectively, a gate electrode, a semiconductor portion, and source and drain electrodes of the transistor.
12. The liquid crystal display device of claim 1, comprising: a liquid crystal layer; and an interlayer insulating layer and a pixel electrode interposed between the liquid crystal layer and the reflective layer, wherein a face of the pixel electrode facing the liquid crystal layer is formed flat without conforming to shapes of the recesses in the reflective layer.
13. The liquid crystal display device of claim 1, wherein the metal layer is a Cs metal layer.
14. The liquid crystal display device of claim 1, wherein the metal layer and a drain of the transistor in a given pixel are formed in different layers.
15. The liquid crystal display device of claim 1, wherein the metal layer includes two portions in the given pixel which are (i) electrically isolated from each other, and (ii) not electrically connected to the gate or source lines.
16. The liquid crystal display device of claim 1, wherein the reflective layer includes two portions in the given pixel which are (i) electrically isolated from each other, and (ii) not electrically connected to the gate or source lines.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for making a barium copper sulfur fluoride (BCSF) transparent conductive thin film, comprising:
(a) forming a sputter target by hot pressing bulk BCSF; and
(b) sputtering a BCSF thin film from the target onto a substrate;
wherein after sputtering, the film is soaked in water for at least 30 seconds and then heated at 100\xb0 C. for 5 minutes; and
wherein the resulting film has a conductivity of 800 Scm.
2. The method of claim 1, wherein the BCSF crystalline phase is cubic in space group Fm3m.
3. The method of claim 1, wherein the substrate is a plastic substrate.
4. The method of claim 3, wherein the plastic substrate is selected from group consisting of polyethersulfone, polyethylene terephthalate, and polyimide substrates.
5. A method for making a barium copper sulfur fluoride (BCSF) transparent conductive thin film, comprising:
(a) forming a sputter target by hot pressing Cu2S, BaS and BaF2 powders in stoichiometric proportions; and
(b) sputtering a BCSF thin film from the target onto a substrate;
wherein after sputtering, the film is soaked in water for at least 30 seconds and then heated at 100\xb0 C. for 5 minutes; and
wherein the resulting film has a conductivity of 800 Scm.
6. The method of claim 5, wherein the BCSF crystalline phase is cubic in space group Fm3m.
7. The method of claim 5, wherein the substrate is a plastic substrate.
8. The method of claim 7, wherein the plastic substrate is selected from group consisting of polyethersulfone, polyethylene terephthalate, and polyimide substrates.