What is claimed is:
1. A temperature controlled ion implanter system, comprising:
a) an ion source having at least one interior chamber for an ion source material; and
b) a temperature regulating means contacting at least a portion of the ion source to reduce the temperature within the interior chamber.
2. The ion implanter according to claim 1 wherein the temperature is sufficiently reduced to a temperature whereat the ion source material exhibits reduced vaporization.
3. The ion implanter according to claim 1 wherein the ion source material is B10H14.
4. The ion implanter according to claim 1 wherein the temperature regulating means comprises a heat absorbing fluid and a vapor-compression system.
5. The ion implanter according to claim 1 wherein the ion source is a double compartment charge exchange type.
6. The ion implanter according to claim 1 wherein the temperature regulating means cools the interior chamber to about 20 C. or below.
7. The ion implanter according to claim 1 wherein the interior chamber is divided into two separated chambers comprising an ionizing chamber and a charge transfer chamber.
8. The ion implanter according to claim 1 further comprising an extraction electrode cooled by a heat absorbing fluid.
9. The ion implanter according to claim 1 wherein the interior chamber has a housing contacting the temperature regulating means, and at least one heating element connected to the housing for heating the interior chamber to reduce vapors of ion source material.
10. The ion implanter according to claim 1 further comprising a temperature monitor inside the interior chamber to determine temperature therein.
11. The ion implanter according to claim 1 further comprising an ion source material vapor detector to monitor levels of vapors.
12. The ion implanter according to claim 1 further comprising a vaporizer communicatively connected to the ion source for vaporizing a solid ion source material, the vaporizer comprising a temperature regulating means to cool the vaporizer to a reduced temperature that substantially reduces vapors of remaining solid ion source material.
13. The ion implanter according to claim 1 wherein the ion source has a gas inlet line connected to a vacuum line, the vacuum line comprising a temperature regulation system to lower the temperature within the tube to a temperature whereat vapors of the ion source material are reduced.
14. A method for cooling an ion implanter to reduce vapors of an ion source material, comprising the steps of:
a) providing an ion implanter having an ion source with at least one interior chamber for vaporized ion source material; and
b) contacting the ion source with a temperature regulating device to cool the interior of the ion source to reduce vapors of ion source material.
15. The method according to claim 14 wherein the temperature is reduced to about 20 C.
16. The ion implanter according to claim 14 wherein the ion source material is B10H14.
17. The method according to claim 14 wherein the temperature regulating means comprises a heat absorbing fluid and a vapor-compression system.
18. The method according to claim 14 wherein the ion source is a double compartment charge exchange type.
19. The method according to claim 14 wherein the interior chamber is divided into two separated chambers comprising an ionizing chamber and a charge transfer chamber.
20. The method according to claim 14 further comprising cooling an extraction electrode by a heat absorbing fluid.
21. The method according to claim 14 further comprising:
providing at least one heating element connected to the interior chamber of the ion source for heating the ion source material to a sufficient temperature to reduce hazardous vapors of the ion source material therein.
22. The method according to claim 14 further comprising monitoring the temperature within the interior chamber to determine temperature therein.
23. The method according to claim 14 further comprising detecting vapors of the ion source material in the interior chamber to determine levels therein.
24. The method according to claim 14 wherein the ion source further comprises a vaporizer communicatively connected to the ion source for vaporizing a solid ion source material, and cooling the temperature in the vaporizer to substantially reduce hazardous vapors of remaining solid ion source material.
25. A temperature controlled ion implanter system, comprising:
a) an ion source having an interior chamber comprising a plasma generating chamber and charge transfer chamber separated by a divider having at least one aperture therein for movement of ions andor gases between the plasma generating chamber and the charge transfer chamber; and
b) a temperature regulating means contacting at least a portion of the ion source to reduce the temperature within the interior chamber.
26. The system according to claim 25 wherein the charge transfer chamber is contacted by the temperature regulating means.
27. The system according to claim 26 wherein the temperature regulating means is a cooling system.
28. The system according to claim 27 wherein the divider further comprises an electrically insulating material.
29. The system according claim 26 wherein the apertures are concentrated on the divider near the terminal ends of the divider and the center portion of the divider is devoid of apertures.
30. The system according to claim 26 wherein the divider further comprises a heat shield material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A process for forming a bridged Group 4 transition metal complex corresponding to the formula:
15
wherein:
M is a Group 4 metal in the 2, 3 or 4 formal oxidation state;
Y1 and Y2 are independently anionic, cyclic or non-cyclic, -bonded groups,
Q, independently each occurrence, is a neutral, anionic or dianionic ligand group, said Q having up to 50 atoms not counting hydrogen;
j is an integer from 1 to 4, selected with respect to the oxidation state of M and the electronic nature of Q to provide overall charge balance to the compound;
R1 is independently each occurrence hydrogen, a hydrocarbyl group, a tri(hydrocarbyl)silyl group, or a tri(hydrocarbyl)silylhydrocarbyl group, or one of the foregoing multiatomic groups further substituted with one or more di(hydrocarbyl)amino- or hydrocarbyloxy- groups, said R1 group containing up to 50 atoms not counting hydrogen, and optionally both R1 groups may be joined together, optionally by means of one or more divalent bridging group moieties derived from the foregoing di(hydrocarbyl)amino- or hydrocarbyloxy-substituent groups, thereby forming a dianionic ligand group,
the steps of the process comprising:
(1) contacting a boron trihalide with a magnesium dianionic salt corresponding to the formula Mg(Y1H)(Y2H), wherein Y1 and Y2 are as previously defined to prepare a metal complex according to the formula:
16
wherein X is halide;
(2) aminating the boron bridging atom thereby forming a compound of Formula 3,
17
wherein R1 is as previously defined,
(3) deprotonating the product of step (2) of Formula 3 by contact with a deprotonating agent; and
(4) contacting the product of step (3) with a transition metal salt of the formula MY3y(LB)b, wherein
M is as previously defined;
Y3 is Q or a leaving group;
y is an integer from 0 to 4 selected to provide charge balance in the transition metal salt;
LB is a Lewis base compound; and
b is an integer from 0 to 3.
2. The process of claim 1 wherein amination of the boron bridging atom (step (2)) is accomplished by the use of an alkali metal amide- or Grignard amide- reagent of the formula MeNR12, wherein Me is an alkali metal cation or Grignard cation of the formula: MgBr or MgCl, by a secondary amine of the formula HNR12, or by a mixture of a secondary amine reagent of the formula HNR12 and a tertiary amine of the formula, NR33, wherein R1 is as previously defined and R3 is R1 or C1-4 alkyl.
3. The process of claim 1 wherein in step (3) the deprotonating agent is an alkali metal bis(trialkylsilyl)amide.
4. The process of claim 1 wherein Y1 and Y2 are inden-1-yl, 2-methyl-4-phenylinden-1-yl, 2-methyl-4-(2-methylphenyl)inden-1-yl, 3-isopropylinden-1-yl, or 3-t-butylinden-1-yl groups.
5. The process of claim 1 wherein M is Zr.
6. A process for forming a compound corresponding to formula 2:
18
wherein
X is halide, and
Y1 and Y2 are independently anionic, cyclic or non-cyclic, -bonded groups,
said process comprising contacting a boron trihalide with a magnesium dianionic salt corresponding to the formula Mg(Y1H)(Y2H), wherein Y1 and Y2 are as previously defined under reaction conditions to thereby prepare the metal complex of formula 2.
7. The process of claim 6 wherein X is Br.
8. A metal complex corresponding to the formula:
19
wherein:
M is a Group 4 metal, in the 2, 3 or 4 formal oxidation state;
Y1 and Y2 are independently anionic, cyclic or non-cyclic, -bonded groups,
Q is a neutral, anionic or dianionic ligand group depending on the oxidation state of M, said Q having up to 50 atoms not counting hydrogen;
j is an integer from 1 to 4, selected with respect to the oxidation state of M and the electronic nature of Q to provide overall charge balance to the compound; and
R1 is independently each occurrence is a substituted hydrocarbyl group, a substituted tri(hydrocarbyl)silyl group, or a substituted tri(hydrocarbyl)silylhydrocarbyl group, said group being substituted with one or more di(hydrocarbyl)amino- or hydrocarbyloxy- groups and containing up to 50 atoms not counting hydrogen, and optionally both R1 groups may be joined together, optionally by means of one or more divalent bridging group moieties derived from the foregoing di(hydrocarbyl)amino- or hydrocarbyloxy- substituent groups, thereby forming a dianionic ligand group.
9. A metal complex according to claim 8 corresponding to formula 1a:
20
wherein
M, Q, and j are as defined in claim 8;
R1 each occurrence is 4-dimethylaminophenyl or two R1 groups together with N are an isoindolenino, N-methylpiperazino, or morpholino group;
R2 is hydrogen, or a hydrocarbyl, halohydrocarbyl, dihydrocarbylamino-hydrocarbyl, tri(hydrocarbylsilyl)hydrocarbyl, Si(R4)3, N(R4)2, or OR4 group of up to 20 carbon or silicon atoms, and optionally two adjacent R2 groups can be joined together, thereby forming a fused ring structure, and
R4 is independently hydrogen, a hydrocarbyl group, a trihydrocarbylsilyl group or a tri(hydrocarbyl)silylhydrocarbyl group, said R4 having up to 20 atoms not counting hydrogen.
10. The complex of claim 9 wherein Q is: 1,4-diphenyl-1,3-butadiene, 1,3-pentadiene, 3-methyl-1,3-pentadiene, 2,4-hexadiene, 1-phenyl-1,3-pentadiene, 1,4-dibenzyl-1,3-butadiene, 1,4-ditolyl-1,3-butadiene, 1,4-bis(trimethylsilyl)-1,3-butadiene, or 1,4-dinaphthyl-1,3-butadiene.
11. The complex of claim 9 wherein Y1 and Y2 are both inden-1-yl, 2-methyl-4-phenylinden-1-yl, 2-methyl-4-(2-methylphenyl)inden-1-yl, 3-isopropylinden-1-yl, or 3-t-butylinden-1-yl groups.