1. A method comprising:
performing, by a user device, a set of one or more measurements at an initial set of rates when the user device is in a discontinuous reception (DRX) mode, wherein the set of one or more measurements comprises an intra-frequency measurement for each of detected neighboring cells and an inter-frequency measurement for each of the detected neighboring cells;
determining a signal condition of a signal received from a serving cell; and
adjusting the initial set of rates based on the signal condition, wherein the adjusting the initial set of rates based on the signal condition comprises:
comparing the signal condition against a first plurality of threshold levels for the intra-frequency measurement and selecting a corresponding rate from a first plurality of rates for the intra-frequency measurement based on the comparing, wherein the first plurality of threshold levels comprise at least three threshold levels that are defined from zero to a first initial threshold, Sintrasearch, corresponding to a first initial rate of the initial set for the intra-frequency measurement; and
comparing the signal condition against a second plurality of threshold levels for the inter-frequency measurement and selecting a corresponding rate for the inter-frequency measurement based on the comparing against the second plurality of threshold levels, wherein the second plurality of threshold levels comprise at least three threshold levels that are defined from zero to a second initial threshold, Sintersearch, corresponding to a second initial rate of the initial set for the inter-frequency measurement.
2. The method of claim 1, wherein the performing the set of one or more measurements at the initial set of rates comprises performing at least one of a detection cycle to detect one or more neighboring cells or a measurement cycle to measure parameters of one or more detected neighboring cells.
3. The method of claim 2, wherein the performing the measurement cycle comprises performing:
the intra-frequency measurement for each of the detected neighboring cells at the first initial rate;
the inter-frequency measurement for each of the detected neighboring cells at the second initial rate; and
an inter-radio access technology (rat) measurement or detection of one or more neighboring cells at a third initial rate of the initial set, and wherein the adjusting the initial set of rates comprises adjusting the first, second, and third initial rates.
4. The method of claim 1, wherein the determining the signal condition comprise measuring a cell quality value of the signal received from the serving cell, and wherein the signal condition is equal to the cell quality value.
5. The method of claim 1, wherein the determining the signal condition comprises:
measuring a cell quality value of the signal received from the serving cell; and
subtracting a minimum required quality level and a power compensation value from the cell quality value, wherein the signal condition is equal to the cell quality value after the subtracting.
6. The method of claim 5, further comprising determining the power compensation value, comprising:
determining a maximum transmission power level that can be used by the user device when accessing the serving cell;
determining a maximum radio frequency (RF) output power of the user device; and
subtracting the maximum RF output power from the maximum transmission power level to generate a computed value, wherein the power compensation value is the greater of the computed value and zero.
7. The method of claim 1, wherein the adjusting the initial set of rates based on the signal condition comprises:
setting the first initial rate to a first rate when the signal condition is less than a first threshold level of the plurality of threshold levels;
setting the first initial rate to a second rate when the signal condition is greater than a second threshold level of the plurality of threshold levels; and
setting the first initial rate to a third rate when the signal condition is greater than the first threshold level and less than second threshold level, wherein the third rate is less than the second rate and the first rate is less than the third rate;
incrementally increasing the first initial rate from the third rate to the first rate as the signal condition decreases towards the first threshold level; and
incrementally reducing the first initial rate from the third rate to the second rate as the signal condition increases away from the first threshold level.
8. The method of claim 7, wherein the third rate is every paging cycle when the user device is in the DRX mode, and wherein the second rate is less than every paging cycle.
9. The method of claim 7, wherein the third rate is defined by a standard specification, and wherein the second rate is a variable rate that is less than the second initial rate.
10. The method of claim 9, wherein the standard specification is the 3rd Generation Partnership Projection (3GPP) specification.
11. The method of claim 1, wherein the user device is an electronic book reader.
12. A user device, comprising:
a memory; and
a processing device, coupled to the memory, wherein the processing device is configured to:
perform a set of one or more measurements at an initial set of rates when the user device is in a discontinuous reception (DRX) mode, wherein the set of one or more measurements comprises an intra-frequency measurement for each of detected neighboring cells and an inter-frequency measurement for each of the detected neighboring cells;
determine a signal condition of a signal received from a serving cell; and
adjust the initial set of rates based on the signal condition by:
comparing the signal condition against a first plurality of threshold levels for the intra-frequency measurement and selecting a corresponding rate from a first plurality of rates for the intra-frequency measurement based on the comparing, wherein the first plurality of threshold levels comprise at least three threshold levels that are defined from zero to a first initial threshold, Sintrasearch, corresponding to a first initial rate of the initial set for the intra-frequency measurement; and
comparing the signal condition against a second plurality of threshold levels for the inter-frequency measurement and selecting a corresponding rate for the inter-frequency measurement based on the comparing against the second plurality of threshold levels, wherein the second plurality of threshold levels comprise at least three threshold levels that are defined from zero to a second initial threshold, Sintersearch, corresponding to a second initial rate of the initial set for the inter-frequency measurement.
13. The user device of claim 12, wherein the selection of one of the first plurality of rates that is less than the first initial rate reduces a current drain by the user device when the user device is in the DRX mode.
14. The user device of claim 12, further comprising a communication circuit, coupled to the processing device, wherein the communication circuit comprising at least one of a transceiver or a transmitter and a receiver.
15. The user device of claim 12, wherein the processing device is configured to execute a measurement module to measure a cell quality value of the signal received from the serving cell to determine the signal condition, and wherein the signal condition is equal to the cell quality value.
16. The user device of claim 15, wherein the processing device is further configured to subtract a minimum required quality level and a power compensation value from the cell quality value to determine the signal condition.
17. The user device of claim 16, wherein the processing device is configured to determine a maximum transmission power level that can be used by the user device when accessing the serving cell, and a maximum radio frequency (RF) output power of the user device, wherein the processing device is further configured to subtract the maximum RF output from the maximum transmission power level to generate a computed value, and wherein the power compensation value is the greater of the computed value and zero.
18. The user device of claim 12, wherein the initial set of rates is defined in the 3rd Generation Partnership Projection (3GPP) specification.
19. A non-transitory computer readable storage medium including instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
performing, by the processing device, a set of one or more measurements at an initial set of rates when a user device is in a discontinuous reception (DRX) mode, wherein the set of one or more measurements comprises an intra-frequency measurement for each of detected neighboring cells and an inter-frequency measurement for each of the detected neighboring cells;
determining a signal condition of a signal received from a serving cell; and
adjusting the initial set of rates based on the signal condition, wherein the adjusting the initial set of rates based on the signal condition comprises:
comparing the signal condition against a first plurality of threshold levels for the intra-frequency measurement and selecting a corresponding rate from a first plurality of rates for the intra-frequency measurement based on the comparing, wherein the first plurality of threshold levels comprise at least three threshold levels that are defined from zero to a first initial threshold, Sintrasearch, corresponding to a first initial rate of the initial set for the intra-frequency measurement; and
comparing the signal condition against a second plurality of threshold levels for the inter-frequency measurement and selecting a corresponding rate for the inter-frequency measurement based on the comparing against the second plurality of threshold levels, wherein the second plurality of threshold levels comprise at least three threshold levels that are defined from zero to a second initial threshold, Sintersearch, corresponding to a second initial rate of the initial set for the inter-frequency measurement.
20. The computer readable storage medium of claim 19, wherein the performing the set of one or more measurements at the initial set of rates comprises performing at least one of a detection cycle to detect one or more neighboring cells or a measurement cycle to measure parameters of one or more detected neighboring cells.
21. The computer readable storage medium of claim 20, wherein the performing the measurement cycle comprises performing:
the intra-frequency measurement for each of the detected neighboring cells at the first initial rate;
the inter-frequency measurement for each of the detected neighboring cells at the second initial rate; and
an inter-radio access technology (rat) measurement or detection of one or more neighboring cells at a third initial rate of the initial set, and wherein the adjusting the initial set of rates comprises adjusting the first, second, and third initial rates.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a memory cell including a first wiring, a second wiring, a transistor, a first conductive layer, a layer, and a second conductive layer, the transistor having a semiconductor film including a channel formation region,
wherein the semiconductor film includes oxygen and indium,
wherein the first conductive layer is electrically connected to the transistor,
wherein each of the layer and the second conductive layer is located over the transistor,
wherein the first conductive layer is overlapped with the second conductive layer,
wherein the layer is interposed between the first conductive layer and the second conductive layer,
wherein the layer comprises a metal oxide, and
wherein a top surface of the first conductive layer has a curved surface at least partly in a region overlapped with the layer.
2. The semiconductor device according to claim 1, wherein the layer includes an organic compound.
3. The semiconductor device according to claim 1, wherein the layer has conductivity.
4. The semiconductor device according to claim 1, further comprising:
a first driver circuit; and
a second driver circuit,
wherein the first wiring is electrically connected to the first driver circuit, and
wherein the second wiring is electrically connected to the second driver circuit.
5. The semiconductor device according to claim 4, wherein the first driver circuit comprises at least one of a column decoder, a read circuit, and a level shifter.
6. The semiconductor device according to claim 4, wherein the second driver circuit comprises a row decoder.
7. The semiconductor device according to claim 1, wherein the transistor is any one of a top gate transistor, a bottom gate transistor, and a forward stagger transistor.
8. The semiconductor device according to claim 1, wherein the semiconductor film comprises In\u2014Ga\u2014Zn\u2014O.
9. A semiconductor device comprising:
a memory cell including a first wiring, a second wiring, a first transistor, a second transistor, a first conductive layer, a layer and a second conductive layer, at least one of the first transistor and the second transistor having a semiconductor film including a channel formation region,
wherein the semiconductor film includes oxygen and indium,
wherein the first conductive layer is electrically connected to the first transistor,
wherein each of the layer and the second conductive layer is located over the first transistor,
wherein the first conductive layer is overlapped with the second conductive layer,
wherein the layer is interposed between the first conductive layer and the second conductive layer,
wherein the layer comprises a metal oxide, and
wherein a top surface of the first conductive layer has a curved surface at least partly in a region overlapped with the layer.
10. The semiconductor device according to claim 9, wherein the layer includes an organic compound.
11. The semiconductor device according to claim 9, wherein the layer has conductivity.
12. The semiconductor device according to claim 9, further comprising:
a first driver circuit; and
a second driver circuit,
wherein the first wiring is electrically connected to the first driver circuit, and
wherein the second wiring is electrically connected to the second driver circuit.
13. The semiconductor device according to claim 12, wherein the first driver circuit comprises at least one of a column decoder, a read circuit, and a level shifter.
14. The semiconductor device according to claim 12, wherein the second driver circuit comprises a row decoder.
15. The semiconductor device according to claim 9, wherein the first transistor and the second transistor are any one of a top gate transistor, a bottom gate transistor, and a forward stagger transistor.
16. The semiconductor device according to claim 9, wherein both of the first transistor and the second transistor have the semiconductor film.
17. The semiconductor device according to claim 9, wherein the semiconductor film comprises In’Ga\u2014Zn\u2014O.
18. A semiconductor device comprising:
a memory cell including a first wiring, a second wiring, a transistor, a first conductive layer, a first layer, a second layer, and a second conductive layer, the transistor having a semiconductor film including a channel formation region,
wherein the semiconductor film includes oxygen and indium,
wherein the first conductive layer is electrically connected to the transistor,
wherein each of the first layer, the second layer and the second conductive layer is located over the transistor,
wherein the first conductive layer is overlapped with the second conductive layer,
wherein the first layer and the second layer are interposed between the first conductive layer and the second conductive layer,
wherein the first layer comprises a metal oxide, and
wherein a top surface of the first conductive layer has a curved surface at least partly in a region overlapped with the first layer.
19. The semiconductor device according to claim 18, wherein the first layer includes a first organic compound, the second layer includes a second organic compound.
20. The semiconductor device according to claim 18, wherein the first layer and the second layer have conductivity.
21. The semiconductor device according to claim 18, further comprising:
a first driver circuit; and
a second driver circuit,
wherein the first wiring is electrically connected to the first driver circuit, and
wherein the second wiring is electrically connected to the second driver circuit.
22. The semiconductor device according to claim 21, wherein the first driver circuit comprises at least one of a column decoder, a read circuit, and a level shifter.
23. The semiconductor device according to claim 21, wherein the second driver circuit comprises a row decoder.
24. The semiconductor device according to claim 18, wherein the transistor is any one of a top gate transistor, a bottom gate transistor, and a forward stagger transistor.
25. The semiconductor device according to claim 18, wherein the semiconductor film comprises In\u2014Ga\u2014Zn\u2014O.