1. A random access memory, comprising:
a memory cell including at least one access device, the at least one access device being switched on or off in accordance with a signal on a wordline to conduct a memory operation through the at least one access device, the at least one access device configured to gate a bitline signal; and
a logic circuit coupled to the wordline to receive and gate the wordline signal in accordance with an enable signal at the logic circuit, wherein the enable signal ensures that an arrival of the bitline signal at the at least one access device occurs at or before the arrival of the signal on the wordline.
2. The memory as recited in claim 1, wherein the memory cell includes a static random access memory cell.
3. The memory as recited in claim 1, wherein the at least one access device includes a bitline transistor.
4. The memory as recited in claim 1, wherein the logic circuit includes a transistor which selectively couples the wordline to a gate of the at least one access device.
5. The memory as recited in claim 1, wherein the enable signal is timed by a system clock signal.
6. The memory as recited in claim 1, further comprising a bit select circuit having cross-coupled transistors gated by a bit decode signal, wherein the cross-coupled transistors are sized to improve performance of memory operations.
7. The memory as recited in claim 1, wherein the enable signal includes a bit select signal.
8. The memory as recited in claim 4, wherein the selective coupling of the transistor to the wordline is controlled by the enable signal which includes a bit decode signal.
9. A static random access memory, comprising:
a memory cell including first and second access transistors respectively coupled to first and second bitlines, the first and second access transistors having gates coupled to a connection node; and
a logic circuit coupled to a wordline, the logic circuit selectively coupling the wordline to the connection node in accordance with an enable signal, wherein the enable signal provides for an arrival of the bitline signal at or before a trigger signal of the wordline such that the trigger signal on the wordline is synchronized with bit line signals to ensure an arrival of the bit line signals at or before the trigger signal to reduce or eliminate an early read condition.
10. The memory as recited in claim 9, wherein the logic circuit includes a transistor, which selectively couples the wordline to the connection node.
11. The memory as recited in claim 9, further comprising a bit select circuit having cross-coupled transistors gated by a bit decode signal, wherein the cross-coupled transistors are sized to improve performance of memory operations.
12. The memory as recited in claim 9, wherein the enable signal includes a bit select signal.
13. The memory as recited in claim 10, wherein the selectively coupling of the connection node to die wordline is controlled by an enable signal, which includes a bit decode signal.
14. The memory as recited in claim 13, wherein the enable signal is timed by a system clock signal.
The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.
1. A string for a musical instrument, the string comprising an amorphous metal alloy consisting essentially of iron (Fe), chromium (Cr), manganese (Mn), molybdenum (Mo), carbon (C), yttrium (Y) and boron (B).
2. The string according to claim 1, wherein the amorphous metal alloy comprises the following atomic percentages:
iron (Fe)
\u226640%
chromium (Cr)
<25%
manganese (Mn)
15%-25%
molybdenum (Mo)
<25%
carbon (C)
10%-25%
boron (B)
10%-25%
yttrium (Y)
\u2009\u22664%.
3. A string for a musical instrument having a fret board, the string comprising amorphous metal, wherein the string has a greater sustain of vibration than a string of identical dimension comprising a crystalline structure as measured by the ratio of the decay time of the fifth harmonic to the decay time of the fundamental frequency.
4. The string according to claim 3, wherein the ratio is greater than 0.55.
5. The string according to claim 3, wherein the amplitude of the second harmonic of the string is greater than the amplitude of the fundamental frequency of the string.
6. A musical instrument string comprising an amorphous metal alloy, wherein said amorphous metal alloy consists essentially of zirconium (Zr), titanium (Ti), nickel (Ni), copper (Cu), and beryllium (Be).
7. The string according to claim 6, wherein said amorphous metal alloy comprises the following atomic percentages:
zirconium (Zr)
about 41.2
titanium (Ti)
about 13.8
nickel (Ni)
about 10
copper (Cu)
about 12.5
beryllium (Be)
about 22.5.
8. A musical instrument string comprising an amorphous metal alloy, wherein said amorphous metal alloy consists essentially of zirconium (Zr), hafnium (Hf), aluminum (Al), nickel (Ni), copper (Cu), iron (Fe), cobalt (Co) and manganese (Mn).
9. The string according to claim 8, wherein said amorphous metal alloy comprises the following atomic percentages:
zirconium (Zr) and hafnium (Hf) combined
about 25-about 85
aluminum (Al)
about 5-about 35
nickel (Ni), Copper (Cu), Iron (Fe), cobalt (Co) and
about 5-about 70.
manganese (Mn) combined