1. A spin-torque transfer memory random access memory (STTMRAM) element comprising:
a composite fixed layer having a first magnetization that is substantially fixed in one direction and formed on top of a substrate;
a tunnel barrier layer formed upon the fixed layer; and
a composite free layer having a second magnetization that is switchable in two directions and formed upon the tunnel barrier layer, the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate,
the composite free and fixed layers being made of multiple repeats of a bilayer unit that is made of a nonmagnetic insulating layer and a magnetic layer, the combination of which results in the magnetization direction of the composite free layer to be substantially perpendicular to the plane of the substrate,
wherein during a write operation, a bidirectional electric current is applied across the STTMRAM element to switch the second magnetization between parallel and anti-parallel states relative to the first magnetization.
2. The STTMRAM element, as recited in claim 1, wherein each of the composite fixed layer and composite free layer is made of a basic bilayer unit.
3. The STTMRAM element, as recited in claim 2, wherein the basic bilayer unit includes an insulating layer and a magnetic layer.
4. The STTMRAM element, as recited in claim 3, wherein each of the composite free layer and composite fixed layer includes an \u2018n\u2019 number of basic bilayer units, with \u2018n\u2019 being an integer.
5. The STTMRAM element, as recited in claim 4, wherein the magnetic layer of the basic bilayer unit is made of two magnetic layers separated by a non-magnetic boron absorption layer.
6. The STTMRAM element, as recited in claim 5, wherein the non-magnetic boron absorption layer is a single element layer, and made of a material comprising: Ta, Ti, or Ru.
7. The STTMRAM element, as recited in claim 5, wherein the non-magnetic boron absorption layer is a composite material comprising one or more of the following: Ta, Ti, Ru, in addition to one or more of the following materials: B, Co, Fe, or Ni.
8. The STTMRAM element, as recited in claim 5, wherein the non-magnetic boron absorption layer is a composite material comprising one or more of the following: Ta, Ti, Ru, B, Co, Fe, or Ni.
9. The STTMRAM element, as recited in claim 4, wherein the magnetic layer of the basic bilayer unit is made of a material comprising: iron (Fe), iron rich cobalt iron (CoFe) alloys, iron rich nickel iron (NiFe) alloys, iron-rich CoFeNiB, iron rich cobalt iron boron (CoFeB) alloys, iron rich nickel iron boron (NiFeB) alloys, or iron rich iron oxide (FeOx), or CoFeOx.
10. The STTMRAM element, as recited in claim 4, wherein the magnetic layer of the basic bilayer unit is made of magnetic multilayers that are made a thin boron (B) absorption nonmagnetic metal layer.
11. The STTMRAM element, as recited in claim 10, wherein the thin boron (B) absorption nonmagnetic metal layer has a thickness of 0.3 to 1.0 nano meters (nm).
12. The STTMRAM element, as recited in claim 4, wherein the insulating layer of the basic bilayer unit is made of a material comprising: magnesium oxide (MgO), aluminum oxide (Al2O3), zinc oxide (ZnO), titanium oxide (TiO2), strontium oxide (SrO), ruthenium oxide (RuO), silicon oxide (SiO2), Zirconium oxide (ZrO2), hafnium oxide (HfO2); tantalum oxide (TaO) and nitrides, such as, aluminum (AlN), titanium nitride (TiN), tanatalum nitride (TaN), silicon nitride (SiN), or zirconium nitride (ZrN).
13. The STTMRAM element, as recited in claim 4, wherein the insulating layer of the basic bilayer unit is made of a mix of oxides and nitrides, such as but not limited to aluminum oxide nitride (AlON).
14. The STTMRAM element, as recited in claim 4, wherein the insulating layer of the basic bilayer unit is made of aluminum oxide nitride (AlON).
15. The STTMRAM element, as recited in claim 4, wherein one of the magnetic layers of the basic bilayer unit is positioned adjacent to and directly contacting the tunnel barrier layer.
16. The STTMRAM element, as recited in claim 15, wherein the magnetic layer of the basic bilayer unit that is positioned adjacent to and directly contacting the tunnel barrier layer is made of CoFe and CoFeB alloys having greater than 50 at % of Fe.
17. The STTMRAM element, as recited in claim 15, wherein the magnetic layer of the basic bilayer unit that is positioned adjacent to and directly contacting the tunnel barrier layer is made of Fe\u2014ZY alloy having less than 15 at % of Z where Z is one or more of one or more of the following materials: boron (B), phosphorous (P), carbon (C), nitride (N) and Y represents any of the materials: tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), silicon (Si), copper (Cu), silver (Ag), aluminum (Al), chromium (Cr), tin (Sn), lead (Pb), antimony (Sb), hafnium (Hf) and bismuth (Bi), molybdenum (Mo), or rhodium (Rh).
18. The STTMRAM element, as recited in claim 4, wherein at least one of the magnetic layers of the basic bilayer unit is made of CoFe and CoFeB alloy having greater than 50 at % of Fe, or Fe\u2014ZY alloy having less than 15 at % of Z where Z is one or more of one or more of the following materials: boron (B), phosphorous (P), carbon (C), nitride (N) and Y represents any of the materials: tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), silicon (Si), copper (Cu), silver (Ag), aluminum (Al), chromium (Cr), tin (Sn), lead (Pb), antimony (Sb), hafnium (Hf) and bismuth (Bi), molybdenum (Mo), or rhodium (Rh).
19. The STTMRAM element, as recited in claim 1, wherein the composite fixed layer comprises an anti-ferromagnetic layer, a first composite magnetic layer formed on top of the AFM, a spacer layer formed on top of the first composite magnetic layer, and a second composite magnetic layer formed on top of the spacer layer.
20. The STTMRAM element, as recited in 1, wherein the composite free layer comprises a first composite magnetic layer, a spacer layer formed on top of the first composite layer, and a second composite magnetic layer formed on top of the spacer layer.
21. The STTMRAM element, as recited in claim 1, wherein the composite fixed layer has an additional top spacer layer and a magnetic layer with magnetization having in-plane preferred direction.
22. The STTMRAM element, as recited in claim 1, wherein the tunnel barrier layer includes a first insertion layer, a second insertion layer and a barrier layer separating the first and second insertion layer.
23. The STTMRAM element, as recited in claim 1, wherein the tunnel barrier layer wherein the first and second insertion layers are each made of magnetic material.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. What I claim as my invention is a strap for wrapping around the waist said strap having on the exterior surface of one end thereof VELCRO fastening means and on the other end thereof, mating VELCRO fastening means such that the respective VELCRO fastening means can be attached to each other so as to constrict said strap about a person’s waist, said second end of said elastic means being attached to said strap. Furtermore the strap houses a two-way radio which is attached to an earpiece to allow communication when the device is powered on.